Power Transistors 2SB1623 Silicon PNP epitaxial planer type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −5 V Peak collector current ICP −8 A Collector current IC −4 A 40 W TC = 25°C PC Ta = 25°C 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV Parameter φ 3.2±0.1 15.0±0.5 ■ Features Collector power dissipation 2.9±0.2 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = −60 V, VBE = 0 −200 µA ICEO VCB = −30 V, IB = 0 −500 µA Emitter cutoff current IEBO VEB = −5 V, IC = 0 −2 mA Collector to emitter voltage VCEO IC = −30 mA, IB = 0 Forward current transfer ratio hFE1 Collector cutoff current hFE2 * −60 VCE = −3 V, IC = − 0.5 A 1 000 VCE = −3 V, IC = −3 A 1 000 V 10 000 Base to emitter voltage (DC value) VBE VCE = −3 V, IC = −3 A −2.5 V Collector to emitter saturation voltage VCE(sat)1 IC = −3 A, IB = −12 mA −2 V VCE(sat)2 IC = −5 A, IB = −20 mA −4 V fT VCB = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = −3 A, IB1 = −12 mA, IB2 = 12 mA 0.3 µs Storage time tstg VCC = −50 V 2 µs Fall time tf 0.5 µs Transition frequency Note) *: Rank classification Rank hFE2 P Q 4 000 to 10 000 2 000 to 5 000 R 1 000 to 2 500 1