Power Transistors 2SC4986 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● ● 10.8±0.2 ● High collector to base voltage VCBO High collector to emitter VCEO Allowing automatic insertion with radial taping 90° 2.5±0.1 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.7±0.1 16.0±1.0 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 4 A Collector current IC 2 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C ■ Electrical Characteristics 0.7±0.1 0.5±0.1 2.5±0.2 2.5±0.2 0.4±0.1 2.05±0.2 0.8C 1 2 1:Emitter 2:Collector 3:Base MT3 Type Package 3 (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 500V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 100 µA hFE1 VCE = 5V, IC = 100mA 15 hFE2 VCE = 5V, IC = 1A 8 Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 0.2A 1 V Base to emitter saturation voltage VBE(sat) IC = 1A, IB = 0.2A 1.5 V Transition frequency fT VCB = 10V, IE = –200mA, f = 200MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio IC = 1A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 150V 120 MHz 1 µs 3 µs 1 µs 1 Power Transistors 2SC4986 IC — VCE VCE(sat) — IC 1.2 TC=25˚C 1.0 1.6 Collector current IC (A) 1.2 0.8 0.4 IB=60mA 50mA 0.8 40mA 0.6 30mA 20mA 0.4 10mA 0.2 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 4 5 6 10 3 1 0.3 0.1 0.03 1 0.1 0.03 0.01 0.003 0.001 0.01 0.03 3 Collector current IC (A) 10 0.1 0.3 1 3000 300 100 30 10 3 1 0.01 0.03 3 10 Cob — VCB 1000 0.3 0.3 120 VCE=5V 30 0.1 1 hFE — IC IC/IB=5 0.01 0.01 0.03 IC/IB=5 3 Collector current IC (A) 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 3 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 2 2 Collector output capacitance Cob (pF) Collector power dissipation PC (W) Without heat sink Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 2.0 IE=0 f=1MHz TC=25˚C 100 80 60 40 20 0 0.1 0.3 1 3 Collector current IC (A) 10 1 3 10 30 100 300 1000 Collector to base voltage VCB (V)