PANASONIC UN217

Small Signal Transistor Arrays
UNA0217 (UN217)
Transistor array to drive the small motor
■ Features
●
5
●
●
Video cameras
Cameras
Portable CD players
Small motor drive circuits in general for electronic equipment.
■ Absolute Maximum Ratings
Symbol
Ratings
Unit
Collector to base voltage
VCBO
±12
V
Collector to emitter voltage
VCEO
±10
V
Emitter to base voltage
VEBO
±7
V
IC
±1
A
PT*
0.5
W
Junction temperature
Tj
150
Storage temperature
Tstg
–55 to +150
Total power dissipation
7
8 9 10
0.9±0.1
6.5±0.3
12˚
(Ta=25±2˚C)
Parameter
Collector current
6
(0.8)
1.5±0.1
1.5+0.2
–0.1
●
12˚
■ Applications
●
0.2+0.1
–0.0
(0.5)
0.4±0.1
4 3 2 1
0.5±0.2
●
45˚
●
Unit: mm
Small and lightweight
Low power consumption (low VCE(sat) transistor used)
Low-voltage drive
With 4 elements incorporated (SO–10C)
5.5±0.3
7.7±0.3
●
Note: ± marks used above: +: NPN part, –: PNP part
SO10-G1 Package
Internal Connection
1
10
2
9
˚C
3
8
˚C
4
7
5
6
* TC = 25˚C only when the elements are active
Note.) The Part number in the Parenthesis shows conventional part number.
1
Small Signal Transistor Arrays
■ Electrical Characteristics
UNA0217
(Ta=25±2˚C)
Parameter
Symbol
Collector cutoff current
ICBO
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Forward current transfer ratio
hFE
Collector to emitter saturation voltage
VCE(sat)1
Transition frequency
fT
Collector output capacitance
Cob
Forward voltage (DC)
VF
Conditions
min
typ
max
(NPN) VCB = 10V
1
(PNP) VCB = –10V
–1
(NPN) IC = 10µA
12
(PNP) IC = –10µA
–12
(NPN) IC = 1mA
10
(PNP) IC = –1mA
–10
Unit
µA
V
V
(NPN) IE = 10µA
7
(PNP) IE = –10µA
–7
(NPN) VCE = 1V, IC = 0.5A*
200
800
(PNP) VCE = –1V, IC = – 0.5A*
200
800
V
(NPN) IC = 1A, IB = 30mA
0.3
(PNP) IC = –1A, IB = –30mA
– 0.3
(NPN) VCB = 6V, IE = –50mA, f = 200MHz
150
(PNP) VCB = –6V, IE = 50mA, f = 200MHz
150
(NPN) VCB = 10V, IE = 0, f = 1MHz
50
(PNP) VCB = –10V, IE = 0, f = 1MHz
65
V
MHz
pF
(NPN) IF = 1A
1.5
(PNP) IF = –1A
–1.5
V
*Pulse measurement
Characteristics charts of PNP transistor block
PT — Ta
IC — VCE
0.6
IC — VBE
–6
–4.8
VCE= –1V
0.5
–5
0.4
0.3
0.2
0.1
–3.2
IB= –14mA
–2.4
–12mA
–10mA
–8mA
–1.6
–6mA
–4mA
Collector current IC (A)
–4.0
Collector current IC (A)
Total power dissipation PT (W)
Ta=25˚C
25˚C
–4
Ta=75˚C
–25˚C
–0.4 –0.8
–1.2
–3
–2
–1
–0.8
–2mA
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
2
0
0
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
0
–1.6
–2.0 –2.4
Base to emitter voltage VBE (V)
Small Signal Transistor Arrays
UNA0217
VCE(sat) — IC
VCE=–1V
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–25˚C
–0.03
–0.01
–0.003
–0.001
–0.01 –0.03 –0.1 –0.3
–1
–3
Cob — VCB
240
500
Ta=75˚C
400
25˚C
300
–25˚C
200
100
0
–0.01 –0.03 –0.1 –0.3
–10
–1
–3
Collector output capacitance Cob (pF)
IC/IB=100/3
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
–10
hFE — IC
600
f=1MHz
IE=0
Ta=25˚C
200
160
120
80
40
0
–0.1 –0.3
–10
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
Collector current IC (A)
Collector current IC (A)
Characteristics charts of NPN transistor block
PT — Ta
IC — VCE
IC — VBE
6
4.8
0.6
VCE=1V
5
0.4
0.3
0.2
3.2
IB=14mA
12mA
10mA
2.4
8mA
1.6
6mA
4mA
25˚C
4
Ta=75˚C
–25˚C
3
2
1
0.8
0.1
2mA
0
0
0
20
40
60
0
80 100 120 140 160
2
VCE(sat) — IC
Forward current transfer ratio hFE
Ta=75˚C
–25˚C
0.03
0.01
0.003
0.001
0.01 0.03
0.1
0.3
1
0
12
0.4
3
Collector current IC (A)
10
0.8
1.2
1.6
500
400
Ta=75˚C
25˚C
–25˚C
200
100
0
0.01 0.03
0.1
0.3
2.4
Cob — VCB
120
300
2.0
Base to emitter voltage VBE (V)
(V)
VCE=1V
1
25˚C
10
hFE — IC
3
0.1
8
600
IC/IB=100/3
0.3
6
Collector to emitter voltage VCE
Ambient temperature Ta (˚C)
10
4
1
3
Collector current IC (A)
10
Collector output capacitance Cob (pF)
0
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
4.0
0.5
Collector current IC (A)
Total power dissipation PT (W)
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
100
80
60
40
20
0
0.1
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
3
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2001 MAR