Transistors with built-in Resistor UNR7231 (UN7231) Silicon NPN epitaxial planer transistor Unit: mm +0.1 0.4±0.08 +0.25 0.4max. 45° 4.0–0.20 High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 1.0–0.2 ● 2.6±0.1 ■ Features ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 For amplification of the low frequency 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 3 ■ Absolute Maximum Ratings 2 1 (Ta=25˚C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Collector current IC 0.7 A Peak collector current ICP 1.5 A Total power dissipation PT* 1.0 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C 1 : Emitter 2 : Collector 3 : Base EIAJ : SC–62 Mini-Power Type Package Marking Symbol: IC Internal Connection * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. C R1(1kΩ) B R2 (47kΩ) E ■ Electrical Characteristics Parameter Collector cutoff current (Ta=25˚C) Symbol Conditions ICBO VCB = 15V, IE = 0 min typ max Unit 1 µA ICEO VCE = 15V, IB = 0 10 µA Emitter cutoff current IEBO VEB = 14V, IC = 0 0.5 mA Collector to base voltage VCBO IC = 10µA, IE = 0 20 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Forward current transfer ratio hFE VCE = 10V, IC = 150mA* 800 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 5mA* VCB = 20V, IE = –20mA, f = 200MHz Transition frequency fT Input resistance R1 Resistance ratio R1/R2 2100 0.4 55 0.7 1 0.016 0.021 V MHz 1.3 kΩ 0.025 *Pulse measurement Note.) The Part number in the Parenthesis shows conventional part number. 1 Transistors with built-in Resistor UNR7231 PT — Ta IC — VCE 1.4 1.0 1.2 1.0 0.8 0.6 0.4 IB=1.2mA 1.0mA 0.8 0.8mA 0.6mA 0.6 0.4mA 0.4 0.2mA 0.2 0.2 0 0 40 80 120 160 0 Ambient temperature Ta (˚C) 2 6 8 10 12 Collector to emitter voltage VCE (V) hFE — IC Cob — VCB 30 2400 Collector output capacitance Cob (pF) VCE=10V Forward current transfer ratio hFE 4 2000 1600 Ta=75˚C 25˚C 1200 –25˚C 800 400 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 25 20 15 10 5 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 100 1.2 Collector current IC (A) Total power dissipation PT (W) 1.6 IC/IB=100 30 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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