Composite Transistors XN07651 (XN7651) Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number of Element 2 1 (0.65) 3 0.30+0.10 –0.05 0.50+0.10 –0.05 • 2SB0970 (2SB970) + ARN-5 0.4±0.2 5 1.50+0.25 –0.05 4 5° ■ Features 0.16+0.10 –0.06 2.8+0.2 –0.3 For motor drive Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 7 V Collector current IC 0.55 A Peak collector current ICP 1.1 A Collector current Tr2 IC 0.7 A Collector to base voltage VCBO −15 V Collector to emitter voltage VCEO −10 V Emitter to base voltage VEBO −7 V Collector current IC − 0.55 A Peak collector current ICP −1.1 A IC − 0.7 A Total power dissipation PT 350 mW Total power dissipation*2 PT 750 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector Overall *1 current*1 0 to 0.1 Parameter Tr1 1.1+0.2 –0.1 ■ Abosolute Maximum Ratings Ta = 25°C 1: Collector (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) EIAJ : SC-74 1.1+0.3 –0.1 10° 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: 9W Internal Connection 4 5 Tr1 Tr2 3 6 2 1 Note) *1: Ta = −20°C ± 2°C *2: An instantaneous total power dissipation (for the single pulse of 50 ms) Note) The part number in the parenthesis shows conventional part number. Publication date: September 2001 SJJ00243AED 1 XN07651 ■ Electrical characteristics Ta = 25°C ± 2°C • Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage VCBO IC = 10 µA, IE = 0 20 Collector to emittter voltage VCEO IC = 1 mA, IB = 0 15 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 7 V ICBO VCB = 15 V, IE = 0 Collector cutoff current hFE1 *1 Forward current transfer ratio hFE2 Collector to emitter saturation voltage *1 VCE = 2 V, IC = 0.5 A 200 VCE = 2 V, IC = 1 A 60 V 0.1 µA 800 VCE(sat)1 *1 IC = 0.3 A, IB = 8 mA *1 IC = 0.7 A, IB = 8 mA 0.5 V IF = 0.55 A 1.4 V VCE(sat)2 VF *2 Diode forward voltage Transition frequency fT Collector output capacitance Cob 0.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 10 pF • Tr2 Parameter Symbol Conditions Typ Max Unit VCBO IC = −10 µA, IE = 0 −15 Collector to emittter voltage VCEO IC = −1 mA, IB = 0 −10 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −7 V ICBO VCB = −10 V, IE = 0 Collector cutoff current hFE1 *1 Forward current transfer ratio hFE2 Collector to emitter saturation voltage *1 VCE = −2 V, IC = − 0.5 A 100 VCE = −2 V, IC = −1 A 60 VCE(sat)1 *1 IC = − 0.3 A, IB = −8 mA *1 IC = − 0.7 A, IB = −8 mA VCE(sat)2 Transition frequency fT Collector output capacitance Cob Total power dissipation PT (mW) − 0.6 V V pF 300 250 200 150 100 50 60 − 0.22 22 350 40 VCB = −10 V, IE = 0, f = 1 MHz PT T a 20 µA 350 MHz 400 0 − 0.1 130 Common characteristics chart 0 V VCB = −10 V, IE = 50 mA, f = 200 MHz Note) *1: Pulse measurement *2: Effective for the transistor with a built-in diode 80 100 120 140 160 Ambient temperature Ta (°C) 2 Min Collector to base voltage SJJ00243AED XN07651 Characteristics charts of Tr1 I C IB Ta = 25˚C IB = 1 mA 0.9 mA 0.8 mA 0.7 mA 0.4 0.6 mA 0.5 mA 0.3 0.4 mA 0.2 VCE = 10 V Ta = 25˚C 1.0 Collector current IC (A) Collector current IC (A) 0.5 VCE(sat) IC 1.2 Collector to emitter saturation voltage VCE(sat) (V) IC VCE 0.6 0.3 mA 0.8 0.6 0.4 0.2 mA 0.1 0.2 0.1 mA 0 0 1 2 3 4 5 0 6 0 0.001 0.002 0.003 0.004 0.005 0.006 Collector to emitter voltage VCE (V) Forward current transfer ratio hFE Collector output capacitance Cob (pF) Ta = 75°C 25°C 500 −25°C 400 300 200 100 0 0.001 0.01 Ta = 75°C – 25°C 25°C 0.01 0.001 0.01 0.1 1 Collector current IC (A) Cob VCB 100 VCE = 2 V 600 IC / IB = 37.5 0.1 Base current IB (A) hFE IC 800 700 1 0.1 10 1 1 f = 1 MHz Ta = 25°C Collector current IC (A) 0 5 10 15 20 25 Collector to base voltage VCB (V) Characteristics charts of Tr2 VCE(sat) IC Collector current IC (A) − 0.3 −9 mA − 0.25 −8 mA −7 mA − 0.2 −6 mA − 0.15 −5 mA −4 mA − 0.1 −3 mA −2 mA − 0.05 −1 mA 0 0 −1 −2 −3 −4 −5 −6 Collector to emitter voltage VCE (V) −1 VBE(sat) IC IC / IB = 50 Base to emitter saturation voltage VBE(sat) (V) Ta = 25˚C IB = −10 mA Collector to emitter saturation voltage VCE(sat) (V) IC VCE − 0.35 Ta = 75°C − 0.1 − 0.01 − 0.01 25°C – 25°C − 0.1 Collector current IC (A) SJJ00243AED −1 −10 −1 − 0.1 − 0.01 IC / IB = 50 25°C Ta = – 25°C 75°C − 0.1 −1 Collector current IC (A) 3 XN07651 hFE IC 400 Cob VCB Forward current transfer ratio hFE 350 Ta = 75°C 300 250 200 25°C −25°C 150 100 50 0 − 0.001 − 0.01 − 0.1 Collector current IC (A) 4 1 000 Collector output capacitance Cob (pF) VCE = −2 V −1 f = 1 MHz Ta = 25°C 100 10 0 −2 −4 −6 −8 −10 −12 −14 −16 Collector to base voltage VCB (V) SJJ00243AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR