BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW94 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BDW94A V CBO Continuous collector current Continuous base current -80 BDW94C -100 -45 BDW94B V CEO BDW94C Emitter-base voltage -60 BDW94 BDW94A UNIT -45 E T E L O S B O BDW94B VALUE -60 -80 V V -100 VEBO -5 V IC -12 A IB -0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 80 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VEC Collector-emitter TEST CONDITIONS MIN BDW94 -45 BDW94A -60 BDW94B -80 BDW94C -100 TYP MAX V IC = -100 mA IB = 0 VCB = -40 V IB = 0 BDW94 -1 Collector-emitter VCB = -60 V IB = 0 BDW94A -1 cut-off current VCB = -80 V IB = 0 BDW94B -1 breakdown voltage (see Note 3) VCB = -80 V IB = 0 BDW94C VCB = -45 V IE = 0 BDW94 -0.1 VCB = -60 V IE = 0 BDW94A -0.1 VCB = -80 V IE = 0 BDW94B -0.1 Collector cut-off VCB = -100 V IE = 0 BDW94C -0.1 current VCB = -45 V IE = 0 TC = 150°C BDW94 -5 VCB = -60 V IE = 0 TC = 150°C BDW94A -5 VCB = -80 V IE = 0 TC = 150°C BDW94B -5 VCB = -100 V IE = 0 TC = 150°C BDW94C -5 VEB = -5 V IC = 0 VCE = -3 V IC = VCE = -3 V IC = -10 A VCE = -3 V IC = -5 A -20 mA IC = -5 A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Parallel diode forward voltage IB = -100 mA IC = -10 A IB = IC = -20 mA IB = -100 mA -5 A IC = -10 A mA -1 E T E L O S B O IB = -3 A UNIT -2 mA mA 1000 (see Notes 3 and 4) 100 750 20000 -2 (see Notes 3 and 4) -3 -2.5 (see Notes 3 and 4) -4 IE = -5 A IB = 0 -2 IE = -10 A IB = 0 -4 V V V NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W 2 TYP SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS135AE 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 -1·0 TC = -40°C TC = 25°C -2·5 TC = 100°C -2·0 -1·5 -1·0 E T E L O S B O VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 TCS135AG -3·0 -10 -0·5 -20 tp = 300 µs, duty cycle < 2% IB = IC / 100 0 -0·5 -1·0 IC - Collector Current - A -10 -20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS135AI VBE(sat) - Base-Emitter Saturation Voltage - V -3·0 -2·5 TC = -40°C TC = 25°C TC = 100°C -2·0 -1·5 -1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 -10 -20 IC - Collector Current - A Figure 3. SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 E T E L O S B O 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. 4 SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.