BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW73, BDW73A, BDW73B, BDW73C and BDW73D ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW74B V CBO -100 BDW74D -120 BDW74 -45 BDW74B V -80 BDW74C -60 BDW74A Collector-emitter voltage (IB = 0) (see Note 1) UNIT -60 BDW74A Collector-base voltage (IE = 0) VALUE -45 BDW74 VCEO V -80 -100 BDW74C -120 BDW74D VEBO -5 Continuous collector current IC -8 A Continuous base current IB -0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 80 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W ½LIC2 75 mJ Emitter-base voltage Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VBE(on) VCE(sat) VEC Collector-emitter breakdown voltage Collector-emitter cut-off current TEST CONDITIONS IC = -30 mA IB = 0 MIN (see Note 5) BDW74 -45 BDW74A -60 BDW74B -80 BDW74C -100 BDW74D -120 TYP MAX V VCE = -30 V IB = 0 BDW74 -0.5 VCE = -30 V IB = 0 BDW74A -0.5 VCE = -40 V IB = 0 BDW74B -0.5 VCE = -50 V IB = 0 BDW74C -0.5 VCE = -60 V IB = 0 BDW74D -0.5 VCB = -45 V IE = 0 BDW74 -0.2 VCB = -60 V IE = 0 BDW74A -0.2 VCB = -80 V IE = 0 BDW74B -0.2 VCB = -100 V IE = 0 BDW74C -0.2 Collector cut-off VCB = -120 V IE = 0 BDW74D -0.2 current VCB = -45 V IE = 0 TC = 150°C BDW74 -5 VCB = -60 V IE = 0 TC = 150°C BDW74A -5 VCB = -80 V IE = 0 TC = 150°C BDW74B -5 VCB = -100 V IE = 0 TC = 150°C BDW74C -5 VCB = -120 V IE = 0 TC = 150°C BDW74D -5 VEB = -5 V IC = 0 Forward current VCE = -3 V IC = -3 A transfer ratio VCE = -3 V IC = -8 A VCE = -3 V IC = -3 A Emitter cut-off current Base-emitter voltage Collector-emitter IB = -12 mA IC = -3 A saturation voltage IB = -80 mA IC = -8 A Parallel diode forward voltage IE = -8 A -2 750 (see Notes 5 and 6) UNIT mA mA mA 20000 100 (see Notes 5 and 6) -2.5 -2.5 (see Notes 5 and 6) -4 IB = 0 -3.5 V V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -3 A IB(on) = -12 mA IB(off) = 12 mA 1 µs toff Turn-off time VBE(off) = 3.5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS135AD 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 -10 TCS135AB -2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 -1·5 -1·0 TC = -40°C TC = 25°C TC = 100°C -0·5 -0·5 IC - Collector Current - A -1·0 -10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS135AC VBE(sat) - Base-Emitter Saturation Voltage - V -3·0 -2·5 TC = -40°C TC = 25°C TC = 100°C -2·0 -1·5 -1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 -10 IC - Collector Current - A Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS135AF -1·0 -0·1 BDW74 BDW74A BDW74B BDW74C BDW74D -0.01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 0,64 0,41 2,90 2,40 5,28 4,88 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 5 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.