BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BDW93B V CBO Continuous collector current 80 100 BDW93 45 BDW93B VCEO 60 80 V V 100 BDW93C Emitter-base voltage 60 BDW93C BDW93A UNIT 45 BDW93 BDW93A VALUE VEBO 5 V IC 12 A IB 0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 80 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C Continuous base current Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VEC Collector-emitter TEST CONDITIONS MIN 45 BDW93A 60 BDW93B 80 BDW93C 100 TYP MAX IC = 100 mA IB = 0 VCB = 40 V IB = 0 BDW93 1 Collector-emitter VCB = 60 V IB = 0 BDW93A 1 cut-off current VCB = 80 V IB = 0 BDW93B 1 breakdown voltage (see Note 3) BDW93 V VCB = 80 V IB = 0 BDW93C VCB = 45 V IE = 0 BDW93 0.1 VCB = 60 V IE = 0 BDW93A 0.1 VCB = 80 V IE = 0 BDW93B 0.1 Collector cut-off VCB = 100 V IE = 0 BDW93C 0.1 current VCB = 45 V IE = 0 TC = 150°C BDW93 5 VCB = 60 V IE = 0 TC = 150°C BDW93A 5 VCB = 80 V IE = 0 TC = 150°C BDW93B 5 VCB = 100 V IE = 0 TC = 150°C BDW93C 5 VEB = 5V IC = 0 Emitter cut-off current Forward current transfer ratio VCE = 3V IC = 3V IC = 10 A VCE = 3V IC = 5A 20 mA IC = 5A (see Notes 3 and 4) mA 100 750 20000 2 IB = saturation voltage IB = 100 mA IC = 10 A Base-emitter IB = IC = saturation voltage IB = 100 mA IC = 10 A Parallel diode IE = 5A IB = 0 2 forward voltage IE = 10 A IB = 0 4 5A mA 1000 3A Collector-emitter 20 mA mA 1 2 VCE = UNIT (see Notes 3 and 4) 3 2.5 (see Notes 3 and 4) 4 V V V NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W 2 TYP SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AE 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS130AG 3·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 2·5 2·0 1·5 1·0 TC = -40°C TC = 25°C TC = 100°C 0·5 20 0 0·5 1·0 IC - Collector Current - A 10 20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AI VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 10 20 IC - Collector Current - A Figure 3. SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. 4 SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5