SavantIC Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDW93/A/B/C APPLICATIONS ·Hammer drivers, ·Audio amplifiers applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BDW94 Collector-base voltage -60 Open emitter -80 BDW94C -100 BDW94 -45 Collector-emitter voltage VEBO Emitter-base voltage IC V BDW94B BDW94A VCEO UNIT -45 BDW94A VCBO VALUE -60 Open base V BDW94B -80 BDW94C -100 Open collector -5 V Collector current-DC -12 A ICM Collector current-Pulse -15 A IB Base current -0.2 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW94 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT -45 BDW94A -60 IC=0.1A, IB=0 V BDW94B -80 BDW94C -100 VCEsat-1 Collector-emitter saturation voltage IC=-5A ,IB=-20mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ,IB=-0.1A -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-5A ,IB=-20mA -2.5 V VBEsat-2 Base-emitter saturation voltage IC=-10A ,IB=-0.1A -4.0 V -0.1 mA -1.0 mA -2.0 mA ICBO ICEO Collector cut-off current Collector cut-off current BDW94 VCB=-45V, IE=0 BDW94A VCB=-60V, IE=0 BDW94B VCB=-80V, IE=0 BDW94C VCB=-100V, IE=0 BDW94 VCE=-45V, IB=0 BDW94A VCE=-60V, IB=0 BDW94B VCE=-80V, IB=0 BDW94C VCE=-100V, IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-3A ; VCE=-3V 1000 hFE-2 DC current gain IC=-5A ; VCE=-3V 750 hFE-3 DC current gain IC=-10A ; VCE=-3V 100 VF-1 Forward diode voltage IF=-5A -2.0 V VF-2 Forward diode voltage IF=-10A -4.0 V 2 20000 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDW94/A/B/C