Inchange Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC Current Gain ・DARLINGTON ・Complement to type BDW93/A/B/C APPLICATIONS ・Hammer drivers, ・Audio amplifiers applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL PARAMETER BDW94 Collector-base voltage N A H INC Open emitter BDW94B Emitter-base voltage IC UNIT -45 -60 V -80 -100 BDW94 -45 Collector-emitter voltage VEBO VALUE BDW94C BDW94A VCEO OND EMIC GE S BDW94A VCBO CONDITIONS -60 Open base V BDW94B -80 BDW94C -100 Open collector -5 V Collector current-DC -12 A ICM Collector current-Pulse -15 A IB Base current -0.2 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW94 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT -45 BDW94A -60 IC=-0.1A, IB=0 V BDW94B -80 BDW94C -100 VCEsat-1 Collector-emitter saturation voltage IC=-5A ,IB=-20mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ,IB=-0.1A -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-5A ,IB=-20mA -2.5 V VBEsat-2 Base-emitter saturation voltage IC=-10A ,IB=-0.1A -4.0 V BDW94 ICBO 体 半导 Collector cut-off current 固电 BDW94A VCB=-60V, IE=0 BDW94B VCB=-80V, IE=0 BDW94C VCB=-100V, IE=0 N A H INC Collector cut-off current R O T UC -0.1 mA -1.0 mA -2.0 mA D N O IC M E S GE BDW94 ICEO VCB=-45V, IE=0 VCE=-45V, IB=0 BDW94A VCE=-60V, IB=0 BDW94B VCE=-80V, IB=0 BDW94C VCE=-100V, IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-3A ; VCE=-3V 1000 hFE-2 DC current gain IC=-5A ; VCE=-3V 750 hFE-3 DC current gain IC=-10A ; VCE=-3V 100 VF-1 Forward diode voltage IF=-5A -2.0 V VF-2 Forward diode voltage IF=-10A -4.0 V 2 20000 Inchange Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3