TICP107 SERIES SILICON CONTROLLED RECTIFIERS ● 1 A Continuous On-State Current ● 15 A Surge-Current ● Glass Passivated Wafer A ● 400 V to 600 V Off-State Voltage K ● IGT 50 µA min, 200 µA max ● di/dt 100A/µs ● Package Options LP PACKAGE (TOP VIEW) G 1 2 3 MDC1AA LP PACKAGE WITH FORMED LEADS (TOP VIEW) PACKAGE PACKING PART # SUFFIX LP Bulk (None) LP with fomed leads Tape and Reel R G 1 2 3 A K E T E L O S B O MDC1AB absolute maximum ratings over operating junction temperature (unless otherwise noted) RATING Repetitive peak off-state voltage (see Note 1) Repetitive peak reverse voltage Continuous on-state current at (or below) 25°C ambient temperature (see Note 2) SYMBOL TICP107D TICP107M TICP107D TICP107M VDRM VRRM VALUE 400 600 400 600 UNIT V V IT(RMS) 1 Surge on-state current at (or below) 25°C ambient temperature (see Note 3) ITSM 15 A Critical rate of rise of on-state current at 110°C (see Note 4) di/dt 100 A/µs Peak positive gate current (pulse width ≤ 300 µs) IGM 0.2 A Junction temperature range TJ -40 to +110 °C Tstg -40 to +125 °C TL 230 °C Storage temperature range Lead temperature 3.2 mm from case for 10 seconds A NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 4. Rate of rise of on-state current after triggering with IG = 10mA, diG/dt = 1A/µs. JANUARY 1999 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TICP107 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C ambient temperature (unless otherwise noted ) PARAMETER IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current TEST CONDITIONS MIN TYP MAX UNIT VD = rated VDRM RGK = 1 kΩ 20 µA VR = rated VRRM IG = 0 200 µA µA IGT Gate trigger current VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs 50 200 VGT Gate trigger voltage VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs 0.4 1 V IH Holding current VAA = 12 V 2 mA VT On-state voltage IT = 2 A 1.4 V NOTE Initiating IT = 10 mA (see Note 5) 5: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. E T E L O S B O 2 JANUARY 1999 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.