TIC225 Series

TIC225 SERIES
SILICON TRIACS
●
Sensitive Gate Triacs
●
8 A RMS, 70 A Peak
●
Glass Passivated Wafer
MT1
1
●
400 V to 800 V Off-State Voltage
MT2
2
●
Max IGT of 5 mA (Quadrant 1)
G
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
TIC225D
E
T
E
L
O
S
B
O
TIC225M
Repetitive peak off-state voltage (see Note 1)
TIC225S
600
VDRM
V
700
TIC225N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
UNIT
400
800
IT(RMS)
8
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
ITSM
70
A
Peak gate current
IGM
±1
A
W
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)
A
PGM
2.2
PG(AV)
0.9
W
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
TL
230
°C
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 200 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER
IDRM
IGT
Repetitive peak
off-state current
TEST CONDITIONS
VD = rated VDRM
IG = 0
MIN
TYP
TC = 110°C
MAX
UNIT
±2
mA
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
2.3
5
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-3.8
-20
current
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-3
-10
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
6
30
mA
† All voltages are with respect to Main Terminal 1.
JULY 1975 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIC225 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
VGT
VT
TYP
MAX
0.7
2
tp(g) > 20 µs
-0.7
-2
tp(g) > 20 µs
-0.7
-2
tp(g) > 20 µs
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
voltage
Vsupply = -12 V†
RL = 10 Ω
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
0.8
2
On-state voltage
IT = ±12 A
IG = 50 mA
(see Note 5)
±1.5
±2.1
Vsupply = +12 V†
IG = 0
Init’ IT = 100 mA
2.3
20
Vsupply = -12 V†
IG = 0
Init’ IT = -100 mA
-1.6
-20
Holding current
IL
Latching current
dv/dt(c)
MIN
RL = 10 Ω
IH
dv/dt
TEST CONDITIONS
Vsupply = +12 V†
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
Vsupply = +12 V†
Vsupply = -12 V†
30
(see Note 6)
VDRM = Rated VDRM
IG = 0
VDRM = Rated VDRM
ITRM = ±12 A
-30
TC = 110°C
TC = 70°C
±1
UNIT
V
V
mA
mA
±20
V/µs
±4.5
V/µs
(see Figure 6)
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, t p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R G = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz
thermal characteristics
E
T
E
L
O
S
B
O
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
2
TYP
MAX
UNIT
2.5
°C/W
62.5
°C/W
JULY 1975 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIC225 SERIES
SILICON TRIACS
TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
1000
100
+
+
-
Vsupply IGTM
VAA = ± 12 V
+
+
RL = 10 Ω
tp(g) = 20 µs
10
1
0·1
-60
-40
-20
0
+
+
-
+
-
-
+
VAA = ± 12 V
}
RL = 10 Ω
tp(g) = 20 µs
1
E
T
E
L
O
S
B
O
20
40
60
80
100
0·1
-60
120
-40
-20
0
Figure 1.
40
60
80
100
120
Figure 2.
HOLDING CURRENT
vs
LATCHING CURRENT
vs
CASE TEMPERATURE
CASE TEMPERATURE
TC07AD
1000
Vsupply
Vsupply IGTM
+
-
+
+
-
+
+
0
20
IL - Latching Current - mA
IH - Holding Current - mA
20
TC - Case Temperature - °C
TC - Case Temperature - °C
100
TC07AB
10
VGT - Gate Trigger Voltage - V
IGT - Gate Trigger Current - mA
Vsupply IGTM
CASE TEMPERATURE
TC07AA
10
1
100
TC07AE
VAA = ± 12 V
10
1
VAA = ± 12 V
IG = 0
Initiating ITM = 100 mA
0·1
-60
-40
-20
0
20
40
60
80
100
120
TC - Case Temperature - °C
Figure 3.
0.1
-60
-40
-20
40
60
80
100
120
TC - Case Temperature - °C
Figure 4.
JULY 1975 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIC225 SERIES
SILICON TRIACS
THERMAL INFORMATION
MAXIMUM RMS ON-STATE CURRENT
vs
CASE TEMPERATURE
TI07AB
IT(Rms) - Maximum On-State Current - A
10
9
8
7
6
5
4
3
E
T
E
L
O
S
B
O
2
1
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
PARAMETER MEASUREMENT INFORMATION
VAC
L1
VAC
ITRM
IMT2
IMT2
C1
50 Hz
VMT2
VDRM
DUT
RG
See
Note A
R1
VMT2
10%
IG
dv/dt
63%
IG
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 µs.
PMC2AA
Figure 6.
4
JULY 1975 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.