TIC226 Series

TIC226 SERIES
SILICON TRIACS
●
8 A RMS
●
Glass Passivated Wafer
●
400 V to 800 V Off-State Voltage
MT1
1
●
Max IGT of 50 mA (Quadrants 1 - 3)
MT2
2
G
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
TIC226D
E
T
E
L
O
S
B
O
TIC226M
Repetitive peak off-state voltage (see Note 1)
TIC226S
600
VDRM
V
700
TIC226N
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
UNIT
400
800
IT(RMS)
8
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
ITSM
70
A
Peak gate current
IGM
±1
A
W
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)
A
PGM
2.2
PG(AV)
0.9
W
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
TL
230
°C
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER
IDRM
IGT
VGT
VT
TEST CONDITIONS
Repetitive peak
off-state current
VD = rated VDRM
IG = 0
MIN
TYP
TC = 110°C
MAX
UNIT
±2
mA
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
6
50
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-12
-50
current
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-10
-50
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
25
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
0.7
2
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-0.8
-2
voltage
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-0.8
-2
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
0.9
2
On-state voltage
IT = ±12 A
IG = 50 mA
(see Note 5)
±1.5
±2.1
mA
V
V
† All voltages are with respect to Main Terminal 1.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIC226 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
IH
Holding current
IL
Latching current
Init’ ITM = 100 mA
10
30
Vsupply = -12 V†
IG = 0
Init’ ITM = -100 mA
-6
-30
Critical rise of commutation voltage
MIN
VDRM = Rated VDRM
IG = 0
VDRM = Rated VDRM
ITRM = ±12 A
UNIT
mA
50
(see Note 6)
Vsupply = -12 V†
off-state voltage
dv/dt(c)
MAX
IG = 0
Vsupply = +12 V†
Critical rate of rise of
dv/dt
TYP
Vsupply = +12 V†
mA
-50
TC = 110°C
±100
TC = 85°C
V/µs
±5
V/µs
(see figure 7)
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, t p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R G = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
E
T
E
L
O
S
B
O
MAX
UNIT
1.8
°C/W
62.5
°C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
1000
+
+
-
CASE TEMPERATURE
TC01AA
VAA = ± 12 V
RL = 10 Ω
tp(g) = 20 µs
+
+
100
10
1
-60
-40
-20
0
20
40
60
80
100
120
Vsupply IGTM
+
+
-
+
-
-
+
}
VAA = ± 12 V
RL = 10 Ω
tp(g) = 20 µs
1
0·1
-60
-40
-20
0
20
40
60
80
TC - Case Temperature - °C
TC - Case Temperature - °C
Figure 1.
Figure 2.
2
TC01AB
10
VGT - Gate Trigger Voltage - V
IGT - Gate Trigger Current - mA
Vsupply IGTM
GATE TRIGGER VOLTAGE
vs
100
120
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIC226 SERIES
SILICON TRIACS
TYPICAL CHARACTERISTICS
HOLDING CURRENT
vs
LATCHING CURRENT
vs
CASE TEMPERATURE
Vsupply IGTM
100
10
1
-40
+
+
-
IG = 0
Initiating ITM = 100 mA
IL - Latching Current - mA
IH - Holding Current - mA
1000
VAA = ± 12 V
Vsupply
+
-
0·1
-60
CASE TEMPERATURE
TC01AD
1000
-20
VAA = ± 12 V
+
+
100
10
E
T
E
L
O
S
B
O
0
20
40
60
80
100
1
-60
120
TC01AE
-40
-20
TC - Case Temperature - °C
0
20
40
60
80
100
120
TC - Case Temperature - °C
Figure 3.
Figure 4.
THERMAL INFORMATION
MAX AVERAGE POWER DISSIPATED
vs
MAX RMS ON-STATE CURRENT
vs
CASE TEMPERATURE
RMS ON-STATE CURRENT
TI01AB
P(av) - Maximum Average Power Dissipated - W
IT(RMS) - Maximum On-State Current - A
10
9
8
7
6
5
4
3
2
1
0
32
TI01AC
TJ = 110 °C
28
Conduction Angle = 360 °
Above 8 A rms
See ITSM Figure
24
20
16
12
8
4
0
0
25
50
75
100
125
0
2
4
6
8
10
12
TC - Case Temperature - °C
IT(RMS) - RMS On-State Current - A
Figure 5.
Figure 6.
14
16
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIC226 SERIES
SILICON TRIACS
PARAMETER MEASUREMENT INFORMATION
VAC
VAC
L1
ITRM
IMT2
IMT2
C1
50 Hz
VMT2
VDRM
DUT
RG
See
Note A
R1
VMT2
10%
dv/dt
63%
E
T
E
L
O
S
B
O
IG
IG
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 µs.
PMC2AA
Figure 7.
4
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.