TICP206D, TICP206M

TICP206 SERIES
SILICON TRIACS
●
1.5 A RMS
●
Glass Passivated Wafer
●
400 V to 600 V Off-State Voltage
MT2
●
Max IGT of 10 mA
MT1
●
Package Options
LP PACKAGE
(TOP VIEW)
G
1
2
3
MDC2AA
PACKAGE
PACKING
PART # SUFFIX
LP
Bulk
(None)
LP with fomed leads
Tape and Reel
R
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
1
2
3
MT2
MT1
MDC2AB
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
E
T
E
L
O
S
B
O
TICP206D
Repetitive peak off-state voltage (see Note 1)
TICP206M
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
VALUE
400
VDRM
UNIT
V
600
IT(RMS)
1.5
A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
ITSM
10
A
Peak on-state surge current half-sine-wave at (or below) 25°C case temperature (see Note 4)
ITSM
12
A
Peak gate current
IGM
±0.2
A
PG(AV)
0.3
W
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
TL
230
°C
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 60 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER
IDRM
IGT
VGT
TEST CONDITIONS
Repetitive peak offstate current
VD = rated VDRM
IG = 0
MIN
TYP
MAX
UNIT
±20
µA
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
8
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-8
current
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-8
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
10
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
2.5
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-2.5
voltage
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-2.5
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
2.5
mA
V
† All voltages are with respect to Main Terminal 1.
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TICP206 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
VT
TEST CONDITIONS
On-state voltage
IH
Holding current
IL
Latching current
MIN
TYP
MAX
UNIT
±2.2
V
IT = ±1 A
IG = 50 mA
(see Note 6)
Vsupply = +12 V†
IG = 0
Init’ ITM = 100 mA
30
Vsupply = -12 V†
IG = 0
Init’ ITM = -100 mA
-30
Vsupply = +12 V†
Vsupply = -12 V†
mA
40
(see Note 7)
mA
-40
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
R G = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
E
T
E
L
O
S
B
O
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
GATE TRIGGER VOLTAGE
vs
TEMPERATURE
+
+
tw(g) = 20 µs
VGT - Gate Trigger Voltage - V
+
+
10
1
0·1
-60
-40
-20
0
20
40
60
80
TC - Case Temperature - °C
Figure 1.
100
120
Vsupply IGTM
VAA = ± 12 V
+
+
-
RL = 10 Ω
tw(g) = 20 µs
+
+
1
0·1
-60
-40
-20
0
20
40
60
80
100
120
TC - Case Temperature - °C
Figure 2.
2
TC05AB
10
VAA = ± 12 V
RL = 10 Ω
Vsupply IGTM
IGT - Gate Trigger Current - mA
TEMPERATURE
TC05AA
100
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TICP206 SERIES
SILICON TRIACS
TYPICAL CHARACTERISTICS
HOLDING CURRENT
vs
LATCHING CURRENT
vs
CASE TEMPERATURE
10
CASE TEMPERATURE
TC05AD
100
VAA = ± 12 V
Vsupply IGTM
IG = 0
Initiating ITM = 100 mA
IL - Latching Current - mA
IH - Holding Current - mA
VAA = ± 12 V
1
Vsupply
+
-
0·1
-60
-40
-20
0
+
+
10
E
T
E
L
O
S
B
O
20
40
60
80
100
120
TC - Case Temperature - °C
Figure 3.
+
+
-
TC05AE
1
0
-60
-40
-20
0
20
40
60
80
100
120
TC - Case Temperature - °C
Figure 4.
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3