TISP4160LP, TISP4180LP SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK APRIL 1987 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE V(Z) NC B(R) V V 120 160 ‘4180LP 145 180 ● Rated for International Surge Wave Shapes ITSP WAVE SHAPE STANDARD 8/20 µs ANSI C62.41 100 0.2/310 µs RLM 88 38 VDE 0433 50 CCITT IX K17 38 MDTRAB LP PACKAGE WITH FORMED LEADS (TOP VIEW) Planar Passivated Junctions Low Off-State Current < 10 µA ● 1 2 3 NC - No internal connection ● ● A(T) V(BO) ‘4160LP 10/700 µs LP PACKAGE (TOP VIEW) A(T) 1 2 3 NC A B(R) NC - No internal connection MD4XAF device symbol Package Options PACKAGE PACKING PART # SUFFIX LP Bulk None LP with fomed leads Tape and Reel R UL Recognized, E132482 description The TISP4xxxLP series is designed specifically for telephone equipment protection against lightning and transients induced by a.c. power lines. These devices consist of a bidirectional suppressor element connecting the A and B terminals. They will suppress inter-wire voltage transients. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. Transients are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TISP4160LP, TISP4180LP SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS APRIL 1987 - REVISED SEPTEMBER 1997 absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 100 ITSP 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) A 38 5/310 µs (CCITT IX K17, open-circuit voltage wave shape 1.5 kV, 10/700 µs) 38 Non-repetitive peak on-state current, 50 Hz, 1 s (see Notes 1 and 2) ITSM 2.5 A rms Initial rate of rise of on-state current, diT/dt 250 A/µs TJ 150 °C 0 to 70 °C Linear current ramp, Maximum ramp value < 38 A Junction temperature Operating free - air temperature range Storage temperature range Tstg -40 to +150 °C Lead temperature 1.5 mm from case for 10 s Tlead 260 °C NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature 2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has returned to thermal equilibrium. 3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting loaded current waveform is specified. . electrical characteristics, TJ = 25°C PARAMETER VZ TEST CONDITIONS Reference zener IZ = ± 1mA voltage Temperature coefficient V(BO) Breakover voltage (see Notes 4 and 5) I(BO) Breakover current (see Note 4) V TM Peak on-state voltage IT = ± 5 A Holding current (see Note 4) dv/dt ID Coff off-state voltage Off-state leakage current Off-state capacitance TISP4180 MAX MIN TYP ± 2.2 %/oC 0.1 ± 0.6 ± 180 ± 0.15 ± 3 ± 150 UNIT V ± 160 ± 0.15 (see Notes 4 and 5) MAX ± 145 0.1 of reference voltage Critical rate of rise of TYP ± 120 ∝V Z IH TISP4160 MIN ± 2.2 V ± 0.6 A ± 3 V ± 150 mA (see Note 6) ± 5 ± 5 kV/µs VD = ± 50 V ± 10 ± 10 µA 150 pF VD = 0 f = 1 kHz 70 150 70 NOTES: 4. These parameters must be measured using pulse techniques, tw = 100 µs, duty cycle ≤ 2%. 5. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm (0.125 inch) from the device body. 6. Linear rate of rise, maximum voltage limited to 80 % VZ (minimum). . thermal characteristics PARAMETER RθJA Junction to free air thermal resistance PRODUCT 2 INFORMATION MIN TYP MAX UNIT 156 °C/W TISP4160LP, TISP4180LP SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS APRIL 1987 - REVISED SEPTEMBER 1997 PARAMETER MEASUREMENT INFORMATION Figure 1. VOLTAGE-CURRENT CHARACTERISTICS FOR TERMINALS A AND B PRODUCT INFORMATION 3 TISP4160LP, TISP4180LP SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS APRIL 1987 - REVISED SEPTEMBER 1997 MECHANICAL DATA LP003 (TO-92) 3-pin cylindical plastic package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. LP003 Falls Within JEDEC TO-226AA Dimensions LP003 (TO-92) 5,21 4,44 4,19 3,17 3,43 MIN. 2,67 2,03 2,67 2,03 5,34 4,32 Seating Plane 1,27 (see Note A) 12,7 MIN. 0,56 0,40 1 1,40 1,14 3 2 0,41 0,35 2,67 2,41 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: Lead dimensions are not controlled in this area. PRODUCT 4 INFORMATION MDXXAX TISP4160LP, TISP4180LP SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS APRIL 1987 - REVISED SEPTEMBER 1997 MECHANICAL DATA LP003 (TO-92) 3-pin cylindical plastic package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. LP003 (TO-92) - Formed Leads Version LP003 Falls Within JEDEC TO-226AA Dimensions 5,21 4,44 4,19 3,17 3,43 MIN. 2,67 2,03 2,67 2,03 5,34 4,32 4,00 MAX. 0,56 0,40 1 2 3 2,90 2,40 0,41 0,35 2,90 2,40 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXAR PRODUCT INFORMATION 5 TISP4160LP, TISP4180LP SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS APRIL 1987 - REVISED SEPTEMBER 1997 MECHANICAL DATA LPR tape dimensions LP Package (TO-92) Tape (Formed Lead Version) 5,21 4,44 4,19 3,17 3,43 MIN. 2,67 2,03 2,67 2,03 5,34 4,32 4,00 MAX. 0,56 0,40 0,41 0,35 13,70 11,70 32,00 23,00 27,68 17,66 0,50 0,00 2,50 MIN. 16,50 15,50 11,00 8,50 9,75 8,50 2,90 2,40 2,90 2,40 19,00 5,50 19,00 17,50 ø 4,30 3,70 6,75 5,95 13,00 12,40 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXAS PRODUCT 6 INFORMATION TISP4160LP, TISP4180LP SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS APRIL 1987 - REVISED SEPTEMBER 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7