TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE(sat) of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE (TOP VIEW) This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP151 V CBO E T E L O S B O TIP152 TIP150 Collector-emitter voltage (IB = 0) TIP151 V CEO TIP152 Emitter-base voltage UNIT 300 TIP150 Collector-base voltage (IE = 0) VALUE 350 V 400 300 350 V 400 VEBO 8 V IC 7 A ICM 10 A IB 1.5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 80 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W °C Continuous collector current Peak collector current (see Note 1) Continuous base current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C NOTES: 1. This value applies for tp ≤ 5 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature PARAMETER V(BR)CBO V(BR)CEO ICEO ICEX(sus) IEBO hFE VCE(sat) VBE(sat) VEC hfe Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter cut-off current Collector-emitter sustaining current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Parallel diode forward voltage Small signal forward current transfer ratio |hfe | Small signal forward Cob Output capacitance current transfer ratio TEST CONDITIONS IC = 1 mA MIN IE = 0 IC = 10 mA IB = 0 (see Note 4) TIP150 300 TIP151 350 TIP152 400 TIP150 300 TIP151 350 TIP152 400 TYP MAX V V VCE = 300 V IB = 0 TIP150 250 VCE = 350 V IB = 0 TIP151 250 VCE = 400 V IB = 0 TIP152 250 VCLAMP = V(BR)CEO 7 VEB = 8V IC = 0 VCE = 5V IC = 2.5 A VCE = 5V IC = 5A VCE = 5V IC = 7A 10 mA IC = 1A IB = µA A 15 mA 150 (see Notes 4 and 5) 50 15 1.5 E T E L O S B O IB = 100 mA IC = 2A IB = 250 mA IC = 5A IB = 100 mA IC = 2A IB = 250 mA IC = 5A IE = 7A IB = 0 (see Notes 4 and 5) VCE = 5V IC = 0.5 A f = 1 kHz 200 VCE = 5V IC = 0.5 A f = 1 MHz 10 IE = 0 f = 1 MHz VCB = 10 V UNIT (see Notes 4 and 5) 1.5 V 2 2.2 (see Notes 4 and 5) 2.3 V 3.5 V 100 pF NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance CθC Thermal capacitance of case MIN TYP MAX UNIT 1.56 °C/W 62.5 °C/W 0.9 J/°C inductive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN MAX UNIT tsv Voltage storage time 3.9 µs tsi Current storage time 4.7 µs trv Voltage transition time 1.2 µs tti Current transition time 1.2 µs txo Cross-over time 2.0 µs IC = 5 A V(clamp) = V(BR)CEO IB(on) = 250 mA RBE = 47 Ω Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS PARAMETER MEASUREMENT INFORMATION 24 V L = 7 mH Vz Driver and Current Limiting Circuit TUT 0.22 µF 100 Ω 0.2 Ω Figure 1. Functional Test Circuit E T E L O S B O 16.6 ms 11.6 ms Input Signal 0 IB Base Current 0 IC Collector Current 0 Collector Emitter Voltage 0 Vclamp 24 V Figure 2. Functional Test Waveforms 40 V 12 V 0.056 Ω 7 mH IRF140 BY205-600 V in = 10 V 1 kΩ TUT Adjust for IB V clamp 47 Ω Figure 3. Switching Test Circuit JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 5 V tp = 300 µs, duty cycle <2% TC = 125°C TC = 25°C TC = -30°C 1000 100 10 0·4 1·0 VCE(sat) - Collector-Emitter Saturation Voltage - V TCD150AA 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCD150AB 10 IC / IB = 20 tp = 300 µs, duty cycle < 2% 1·0 E T E L O S B O 0·1 0·4 10 1·0 IC - Collector Current - A Figure 5. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2·5 2·0 1·5 TC = -30°C TC = 25°C TC = 125°C 1·0 10 IC - Collector Current - A Figure 6. VCE = 400 V IB = 0 100 10 1·0 -50 -25 0 25 50 75 100 125 TC - Case Temperature - °C Figure 7. 4 TCD150AD 1000 ICEO - Collector Cut-off Current - µA VBE(sat) - Base-Emitter Saturation Voltage - V COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP150AC IC / IB = 20 tp = 300µs, duty cycle < 2% 1·0 0·4 10 IC - Collector Current - A Figure 4. 3·0 TC = 125°C TC = 25°C TC = -30°C JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAD150AA 10 1·0 0.1 t p = 0.1 ms 1 ms tp = 5 ms tp = DC Operation E T E L O S B O 0·01 1·0 TIP150 TIP151 TIP152 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 8. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TID150AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 9. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5