TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE(sat) of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP161 V CBO E T E L O S B O TIP162 TIP160 Collector-emitter voltage (IB = 0) TIP161 UNIT 320 TIP160 Collector-base voltage (IE = 0) VALUE VCEO TIP162 350 V 380 320 350 V 380 VEBO 5 V IC 10 A Peak collector current (see Note 1) ICM 15 A Peak commutating anti-parallel diode current (IB = 0) (see Note 2) IEM 10 A IB 1 A Continuous device dissipation at (or below) 100°C case temperature (see Note 3) Ptot 50 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 4) Ptot 3 W °C Emitter-base voltage Continuous collector current Continuous base current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C This value applies for tp ≤ 10 ms, duty cycle ≤ 10%. This value applies to the total collector-terminal current when the collector is at negative potential with respect to the emitt er. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature PARAMETER ICEO ICEX(sus) IEBO hFE V CE(sat) VBE(sat) VEC Collector-emitter cut-off current Collector-emitter sustaining current Emitter cut-off current Forward current transfer ratio TEST CONDITIONS MIN VCE = 320 V IB = 0 TIP160 VCE = 350 V IB = 0 TIP161 VCE = 380 V IB = 0 TIP162 VCLAMP = V(BR)CEO VEB = TYP MAX UNIT 1 mA 7 5V A IC = 0 VCE = 2.2 V IC = 100 4A (see Notes 5 and 6) mA 200 Collector-emitter IB = 0.1A IC = 6.5 A saturation voltage IB = 1A IC = 10 A IB = 0.1A IC = 6.5 A (see Notes 5 and 6) 2.2 V IE = 10 A IB = 0 (see Notes 5 and 6) 3.5 V Base-emitter saturation voltage Parallel diode forward voltage 2.8 (see Notes 5 and 6) 2.9 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics E T E L O S B O PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance CθC Thermal capacitance of case MIN TYP MAX UNIT 1 °C/W 41.7 °C/W 1.4 J/°C resistive-load-switching characteristics at 25°C case temperature PARAMETER † td Delay time tr Rise time ts Storage time tf Fall time TEST CONDITIONS IC = 6.5 A IB(on) = 100 mA VBE(off) = -5 V RL = 5 Ω † MIN IB(off) = -100 mA MAX UNIT 40 ns 1.5 µs 2.2 µs 2.6 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS PARAMETER MEASUREMENT INFORMATION 24 V L = 7 mH Vz Driver and Current Limiting Circuit TUT 0.22 µF 100 Ω 0.2 Ω Figure 1. Functional Test Circuit E T E L O S B O 16.6 ms 11.6 ms Input Signal 0 IB Base Current 0 IC Collector Current 0 Collector Emitter Voltage 0 Vclamp 24 V Figure 2. Functional Test Waveforms 40 V 12 V 0.056 Ω 7 mH IRF140 BY205-600 V in = 10 V 1 kΩ TUT Adjust for IB V clamp 47 Ω Figure 3. Switching Test Circuit JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCD160AA 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = 125°C TC = 25°C TC = -30°C 1000 100 1·0 IC / IB = 65 tp = 300 µs, duty cycle < 2% 1·0 E T E L O S B O VCE = 2.2 V tp = 300 µs, duty cycle < 2% 10 0·4 TCD160AB 10 10 0·1 1·0 40 IC - Collector Current - A Figure 5. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCD160AD IC / IB = 10 tp = 300 µs, duty cycle < 2% 1·0 TC = 125°C TC = 25°C TC = -30°C 10 IC - Collector Current - A Figure 6. 3·0 VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 0·4 1·0 TCP160AC IC / IB = 65 tp = 300µs, duty cycle < 2% 1·0 TC = -30°C TC = 25°C TC = 125°C 0·6 1·0 10 IC - Collector Current - A Figure 7. 4 10 IC - Collector Current - A Figure 4. 4·0 TC = 125°C TC = 25°C TC = -30°C JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAD160AA o TC ≤ 100 C 10 1·0 0.1 DC Operation tp = 150 ms, d = 1% tp = 5 ms, d = 5% tp = 1 ms, d= 5% tp = 0.1 ms, d= 5% E T E L O S B O 0·01 1·0 TIP160 TIP161 TIP162 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 8. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5