TIP160, TIP161, TIP162

TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
●
50 W at 25°C Case Temperature
●
10 A Continuous Collector Current
●
15 A Peak Collector Current
●
Maximum VCE(sat) of 2.8 V at IC = 6.5 A
●
ICEX(sus) 7 A at rated V(BR)CEO
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
TIP161
V CBO
E
T
E
L
O
S
B
O
TIP162
TIP160
Collector-emitter voltage (IB = 0)
TIP161
UNIT
320
TIP160
Collector-base voltage (IE = 0)
VALUE
VCEO
TIP162
350
V
380
320
350
V
380
VEBO
5
V
IC
10
A
Peak collector current (see Note 1)
ICM
15
A
Peak commutating anti-parallel diode current (IB = 0) (see Note 2)
IEM
10
A
IB
1
A
Continuous device dissipation at (or below) 100°C case temperature (see Note 3)
Ptot
50
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 4)
Ptot
3
W
°C
Emitter-base voltage
Continuous collector current
Continuous base current
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
This value applies for tp ≤ 10 ms, duty cycle ≤ 10%.
This value applies to the total collector-terminal current when the collector is at negative potential with respect to the emitt
er.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature
PARAMETER
ICEO
ICEX(sus)
IEBO
hFE
V CE(sat)
VBE(sat)
VEC
Collector-emitter
cut-off current
Collector-emitter
sustaining current
Emitter cut-off
current
Forward current
transfer ratio
TEST CONDITIONS
MIN
VCE = 320 V
IB = 0
TIP160
VCE = 350 V
IB = 0
TIP161
VCE = 380 V
IB = 0
TIP162
VCLAMP = V(BR)CEO
VEB =
TYP
MAX
UNIT
1
mA
7
5V
A
IC = 0
VCE = 2.2 V
IC =
100
4A
(see Notes 5 and 6)
mA
200
Collector-emitter
IB =
0.1A
IC = 6.5 A
saturation voltage
IB =
1A
IC = 10 A
IB =
0.1A
IC = 6.5 A
(see Notes 5 and 6)
2.2
V
IE =
10 A
IB = 0
(see Notes 5 and 6)
3.5
V
Base-emitter
saturation voltage
Parallel diode
forward voltage
2.8
(see Notes 5 and 6)
2.9
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
E
T
E
L
O
S
B
O
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
CθC
Thermal capacitance of case
MIN
TYP
MAX
UNIT
1
°C/W
41.7
°C/W
1.4
J/°C
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
TEST CONDITIONS
IC = 6.5 A
IB(on) = 100 mA
VBE(off) = -5 V
RL = 5 Ω
†
MIN
IB(off) = -100 mA
MAX
UNIT
40
ns
1.5
µs
2.2
µs
2.6
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
PARAMETER MEASUREMENT INFORMATION
24 V
L = 7 mH
Vz
Driver and
Current
Limiting
Circuit
TUT
0.22 µF
100 Ω
0.2 Ω
Figure 1. Functional Test Circuit
E
T
E
L
O
S
B
O
16.6 ms
11.6 ms
Input
Signal
0
IB
Base
Current
0
IC
Collector
Current
0
Collector
Emitter
Voltage
0
Vclamp
24 V
Figure 2. Functional Test Waveforms
40 V
12 V
0.056 Ω
7 mH
IRF140
BY205-600
V in = 10 V
1 kΩ
TUT
Adjust for
IB
V clamp
47 Ω
Figure 3. Switching Test Circuit
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCD160AA
10000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = 125°C
TC = 25°C
TC = -30°C
1000
100
1·0
IC / IB = 65
tp = 300 µs, duty cycle < 2%
1·0
E
T
E
L
O
S
B
O
VCE = 2.2 V
tp = 300 µs, duty cycle < 2%
10
0·4
TCD160AB
10
10
0·1
1·0
40
IC - Collector Current - A
Figure 5.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCD160AD
IC / IB = 10
tp = 300 µs, duty cycle < 2%
1·0
TC = 125°C
TC = 25°C
TC = -30°C
10
IC - Collector Current - A
Figure 6.
3·0
VBE(sat) - Base-Emitter Saturation Voltage - V
VCE(sat) - Collector-Emitter Saturation Voltage - V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
0·4
1·0
TCP160AC
IC / IB = 65
tp = 300µs, duty cycle < 2%
1·0
TC = -30°C
TC = 25°C
TC = 125°C
0·6
1·0
10
IC - Collector Current - A
Figure 7.
4
10
IC - Collector Current - A
Figure 4.
4·0
TC = 125°C
TC = 25°C
TC = -30°C
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAD160AA
o
TC ≤ 100 C
10
1·0
0.1
DC Operation
tp = 150 ms,
d = 1%
tp = 5 ms,
d = 5%
tp = 1 ms,
d=
5%
tp = 0.1 ms,
d=
5%
E
T
E
L
O
S
B
O
0·01
1·0
TIP160
TIP161
TIP162
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 8.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5