TIP100, TIP101, TIP102

TIP100, TIP101, TIP102
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
TIP105, TIP106 and TIP107
●
80 W at 25°C Case Temperature
●
8 A Continuous Collector Current
●
Maximum VCE(sat) of 2.5 V at IC = 8 A
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
This series is obsolete and
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
TIP101
V CBO
E
T
E
L
O
S
B
O
TIP102
TIP100
Collector-emitter voltage (IB = 0)
TIP101
V CEO
TIP102
Emitter-base voltage
UNIT
60
TIP100
Collector-base voltage (IE = 0)
VALUE
80
V
100
60
80
V
100
VEBO
5
V
IC
8
A
ICM
15
A
IB
1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
80
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
2
W
½LIC2
10
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
260
°C
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIP100, TIP101, TIP102
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE
VEC
Collector-emitter
breakdown voltage
TEST CONDITIONS
MIN
TIP100
IC = 30 mA
IB = 0
(see Note 5)
TYP
MAX
TIP101
80
TIP102
100
V
VCE = 30 V
IB = 0
TIP100
50
VCE = 40 V
IB = 0
TIP101
50
VCE = 50 V
IB = 0
TIP102
50
VCB = 60 V
IE = 0
TIP100
50
VCB = 80 V
IE = 0
TIP101
50
VCB = 100 V
IE = 0
TIP102
50
VEB =
5V
IC = 0
Forward current
VCE =
4V
IC = 3 A
transfer ratio
VCE =
4V
IC = 8 A
Collector-emitter
IB =
6 mA
IC = 3 A
saturation voltage
IB = 80 mA
IC = 8 A
VCE =
IC = 8 A
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Base-emitter
voltage
Parallel diode
forward voltage
4V
8
(see Notes 5 and 6)
1000
8A
µA
mA
20000
2
(see Notes 5 and 6)
2.5
(see Notes 5 and 6)
IB = 0
µA
200
E
T
E
L
O
S
B
O
IE =
UNIT
60
(see Notes 5 and 6)
V
2.8
V
3.5
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
CθC
Thermal capacitance of case
MIN
TYP
MAX
UNIT
1.56
°C/W
62.5
°C/W
0.9
J/°C
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
TEST CONDITIONS
†
MIN
MAX
UNIT
35
ns
IC = 8 A
IB(on) = 80 mA
IB(off) = -80 mA
350
ns
VBE(off) = -5 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
1.8
µs
2.45
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIP100, TIP101, TIP102
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS130AA
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
1·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
1·5
1·0
E
T
E
L
O
S
B
O
VCE = 4 V
tp = 300 µs, duty cycle < 2%
100
0·5
TCS130AB
2·0
10
0·5
0·5
IC - Collector Current - A
1·0
TC = -40°C
TC = 25°C
TC = 100°C
10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AC
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
2·5
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
10
IC - Collector Current - A
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIP100, TIP101, TIP102
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS130AA
tp = 100 µs,
d = 0.1 = 10%
tp = 1 ms,
d = 0.1 = 10%
tp = 5 ms,
d = 0.1 = 10%
DC Operation
10
1·0
E
T
E
L
O
S
B
O
TIP100
TIP101
TIP102
0·1
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AA
Ptot - Maximum Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.