SAVANTIC TIP150

SavantIC Semiconductor
Product Specification
TIP150/151/152
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·DARLINGTON
APPLICATIONS
·For use in automotive ignition,switching
and motor control applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
TIP150
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
TIP151
Open emitter
Emitter-base voltage
IC
350
TIP152
400
TIP150
300
TIP151
UNIT
300
Open base
350
V
V
400
TIP152
VEBO
VALUE
Open collector
8
V
Collector current-DC
7
A
ICM
Collector current-Pulse
10
A
IB
Base current-DC
1.5
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.56
UNIT
/W
SavantIC Semiconductor
Product Specification
TIP150/151/152
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP150
V(BR)CEO
V(BR)CBO
Collector-emitter
breakdown voltage
Collector-base
breakdown voltage
TIP151
MIN
MAX
UNIT
300
IC=10mA, IB=0
400
TIP150
300
IC=1mA, IE=0
TIP152
V
350
TIP152
TIP151
TYP.
V
350
400
VCE(sat)-1
Collector-emitter saturation voltage
IC=1A ,IB=10mA
1.5
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=2A ,IB=100mA
1.5
V
VCE(sat)-3
Collector-emitter saturation voltage
IC=5A ,IB=250mA
2.0
V
VBE(sat)-1
Base-emitter saturation voltage
IC=2A ,IB=100mA
2.2
V
VBE (sat)-2
Base-emitter saturation voltage
IC=5A ,IB=250mA
2.3
V
250
µA
15
mA
ICEO
Collector cut-off current
TIP150
VCE=300V, IB=0
TIP151
VCE=350V, IB=0
TIP152
VCE=400V, IB=0
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=2.5A ; VCE=5V
150
hFE-2
DC current gain
IC=5A ; VCE=5V
50
hFE-3
DC current gain
IC=7A ; VCE=5V
15
Diode forward voltage
IF=7A
3.5
V
Output capacitance
IE=0 ; VCB=10V;f=1MHz
150
pF
VF
COB
Switching times
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
VCC=250V; IC=5A
IB1=-IB2=250mA
tp=20µs;Duty CycleC2.0%
2
0.03
µs
0.18
µs
3.5
µs
1.6
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.1mm)
3
TIP150/151/152