SavantIC Semiconductor Product Specification TIP150/151/152 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON APPLICATIONS ·For use in automotive ignition,switching and motor control applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP150 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP151 Open emitter Emitter-base voltage IC 350 TIP152 400 TIP150 300 TIP151 UNIT 300 Open base 350 V V 400 TIP152 VEBO VALUE Open collector 8 V Collector current-DC 7 A ICM Collector current-Pulse 10 A IB Base current-DC 1.5 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.56 UNIT /W SavantIC Semiconductor Product Specification TIP150/151/152 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP150 V(BR)CEO V(BR)CBO Collector-emitter breakdown voltage Collector-base breakdown voltage TIP151 MIN MAX UNIT 300 IC=10mA, IB=0 400 TIP150 300 IC=1mA, IE=0 TIP152 V 350 TIP152 TIP151 TYP. V 350 400 VCE(sat)-1 Collector-emitter saturation voltage IC=1A ,IB=10mA 1.5 V VCE(sat)-2 Collector-emitter saturation voltage IC=2A ,IB=100mA 1.5 V VCE(sat)-3 Collector-emitter saturation voltage IC=5A ,IB=250mA 2.0 V VBE(sat)-1 Base-emitter saturation voltage IC=2A ,IB=100mA 2.2 V VBE (sat)-2 Base-emitter saturation voltage IC=5A ,IB=250mA 2.3 V 250 µA 15 mA ICEO Collector cut-off current TIP150 VCE=300V, IB=0 TIP151 VCE=350V, IB=0 TIP152 VCE=400V, IB=0 IEBO Emitter cut-off current VEB=8V; IC=0 hFE-1 DC current gain IC=2.5A ; VCE=5V 150 hFE-2 DC current gain IC=5A ; VCE=5V 50 hFE-3 DC current gain IC=7A ; VCE=5V 15 Diode forward voltage IF=7A 3.5 V Output capacitance IE=0 ; VCB=10V;f=1MHz 150 pF VF COB Switching times td Delay time tr Rise time ts Storage time tf Fall time VCC=250V; IC=5A IB1=-IB2=250mA tp=20µs;Duty CycleC2.0% 2 0.03 µs 0.18 µs 3.5 µs 1.6 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.1mm) 3 TIP150/151/152