TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE(sat) of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO JUNE 1973 - REVISED MARCH 1997 SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP160 Collector-base voltage (IE = 0) TIP161 VCBO 350 V 380 TIP160 TIP161 UNIT 320 TIP162 Collector-emitter voltage (IB = 0) VALUE 320 VCEO TIP162 350 V 380 V EBO 5 V IC 10 A Peak collector current (see Note 1) ICM 15 A Peak commutating anti-parallel diode current (IB = 0) (see Note 2) IEM 10 A IB 1 A Continuous device dissipation at (or below) 100°C case temperature (see Note 3) Ptot 50 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 4) Ptot 3 W °C Emitter-base voltage Continuous collector current Continuous base current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C This value applies for tp ≤ 10 ms, duty cycle ≤ 10%. This value applies to the total collector-terminal current when the collector is at negative potential with respect to the emitter. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER ICEO ICEX(sus) IEBO hFE VCE(sat) V BE(sat) VEC TEST CONDITIONS Collector-emitter cut-off current Collector-emitter sustaining current Emitter cut-off IB = 0 TIP160 V CE = 350 V IB = 0 TIP161 V CE = 380 V IB = 0 TIP162 VCLAMP = V(BR)CEO VEB = current Forward current transfer ratio MIN VCE = 320 V TYP MAX UNIT 1 mA 7 5V A IC = 0 VCE = 2.2 V IC = 100 4A (see Notes 5 and 6) mA 200 Collector-emitter IB = 0.1A IC = 6.5 A saturation voltage IB = 1A IC = 10 A IB = 0.1A IC = 6.5 A (see Notes 5 and 6) 2.2 V IE = 10 A IB = 0 (see Notes 5 and 6) 3.5 V MAX UNIT 1 °C/W 41.7 °C/W Base-emitter saturation voltage Parallel diode forward voltage 2.8 (see Notes 5 and 6) 2.9 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance Cθ C Thermal capacitance of case MIN TYP 1.4 J/°C resistive-load-switching characteristics at 25°C case temperature PARAMETER † td Delay time tr Rise time IC = 6.5 A IB(on) = 100 mA ts Storage time V BE(off) = -5 V RL = 5 Ω tf Fall time † MIN IB(off) = -100 mA Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TYP MAX UNIT 40 ns 1.5 µs 2.2 µs 2.6 µs TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 24 V L = 7 mH Vz Driver and Current Limiting Circuit TUT 0.22 µ F 100 Ω 0.2 Ω Figure 1. Functional Test Circuit 16.6 ms 11.6 ms Input Signal 0 IB Base Current 0 IC Collector Current 0 Collector Emitter Voltage 0 Vclamp 24 V Figure 2. Functional Test Waveforms 40 V 12 V 0.056 Ω 7 mH IRF140 BY205-600 V in = 10 V 1 kΩ TUT Adjust for IB V clamp 47 Ω Figure 3. Switching Test Circuit PRODUCT INFORMATION 3 TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCD160AA 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = 125°C TC = 25°C TC = -30°C 1000 100 VCE = 2.2 V t p = 300 µs, duty cycle < 2% 10 0·4 1·0 10 TCD160AB 10 IC / IB = 65 tp = 300 µs, duty cycle < 2% 1·0 TC = 125°C TC = 25°C TC = -30°C 0·1 1·0 40 IC - Collector Current - A IC - Collector Current - A Figure 4. Figure 5. TCD160AD IC / IB = 10 tp = 300 µs, duty cycle < 2% 1·0 TC = 125°C TC = 25°C TC = -30°C 0·4 1·0 10 IC - Collector Current - A Figure 6. PRODUCT 4 BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT INFORMATION TCP160AC 3·0 VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 4·0 10 IC / IB = 65 t p = 300µs, duty cycle < 2% 1·0 TC = -30°C TC = 25°C TC = 125°C 0·6 1·0 10 IC - Collector Current - A Figure 7. TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAD160AA TC ≤ 100 C o 10 1·0 0.1 0·01 1·0 DC Operation tp = 150 ms, d = 1% tp = 5 ms, d = 5% tp = 1 ms, d= 5% tp = 0.1 ms, d= 5% TIP160 TIP161 TIP162 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 8. PRODUCT INFORMATION 5 TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 15,2 14,7 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT 6 INFORMATION MDXXAW TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7