TIP3055

TIP3055
NPN SILICON POWER TRANSISTOR
●
Designed for Complementary Use with the
TIP2955 Series
●
90 W at 25°C Case Temperature
●
15 A Continuous Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
Collector-base voltage (IE = 0)
VCBO
100
V
Collector-emitter voltage (IB = 0) (see Note 1)
VCER
70
V
Emitter-base voltage
VEBO
7
V
IC
15
A
IB
7
A
Continuous collector current
Continuous base current
E
T
E
L
O
S
B
O
UNIT
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
90
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
½LIC2
62.5
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
260
°C
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
This value applies when the base-emitter resistance RBE = 100 Ω.
Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 10 V.
DECEMBER 1970 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIP3055
NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICER
ICEO
ICEV
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Voltage between
base and emitter
Emitter cut-off
current
TEST CONDITIONS
IC = 30 mA
IB = 0
VCE = 70 V
RBE = 100 Ω
VCE = 30 V
IB = 0
VCE = 100 V
VEB =
7V
MIN
(see Note 5)
60
mA
VBE = -1.5 V
5
mA
IC = 0
5
mA
VCE =
4V
IC =
4A
4V
IC =
1 0A
(see Notes 5 and 6)
20
IB =
0.4 A
IC =
4A
saturation voltage
IB =
3.3 A
IC =
1 0A
4V
IC =
4A
VCE = 10 V
IC =
0.5 A
f = 1 kHz
15
VCE = 10 V
IC =
0.5 A
f = 1 MHz
3
current transfer ratio
Small signal forward
current transfer ratio
70
5
Collector-emitter
Small signal forward
V
0.7
VCE =
VCE =
UNIT
mA
transfer ratio
voltage
MAX
1
Forward current
Base-emitter
TYP
1.1
(see Notes 5 and 6)
3
(see Notes 5 and 6)
1.8
E
T
E
L
O
S
B
O
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.39
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
ton
Turn-on time
toff
Turn-off time
TEST CONDITIONS
†
MIN
IC = 6 A
IB(on) = 0.6 A
IB(off) = -0.6 A
VBE(off) = -4 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
0.6
µs
1
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
DECEMBER 1970 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIP3055
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS637AD
1000
hFE - DC Current Gain
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
E
T
E
L
O
S
B
O
10
0·01
0·1
1·0
10
IC - Collector Current - A
Figure 1.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS637AB
tp = 300 µs,
d = 0.1 = 10%
tp = 1 ms,
d = 0.1 = 10%
tp = 10 ms,
d = 0.1 = 10%
DC Operation
10
1·0
0·1
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 2.
DECEMBER 1970 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIP3055
NPN SILICON POWER TRANSISTOR
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS637AB
Ptot - Maximum Power Dissipation - W
100
80
60
40
20
E
T
E
L
O
S
B
O
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 3.
4
DECEMBER 1970 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.