TIGER ELECTRONIC CO.,LTD Product specification Complementary Silicon High Power Ttransistors TIP3055 / TIP2955 DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-247 plastic package. It is intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. The complementary PNP type is the TIP2955. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Symbol Value Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 15 A Base Current IB 7 A Ptot 90 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C TO-247 C O ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO VCB=50V, IE=0 — — 0.7 mA Emitter Cut-off Current IEBO VEB=7.0V, IC=0 — — 5.0 mA Collector-Emitter Sustaining Voltage VCEO IC=30mA, IB=0 60 — — V hFE(1) VCE=4.0V, IC=4.0A 20 — 70 hFE(2) VCE=4.0V, IC=10A 5 — — IC=4.0A,IB=0.4A — — 1.0 IC=10A,IB=3.3A — — 3.0 DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) V Base-Emitter Voltage VBE VCE=4.0V,IC=4.0A — — 1.8 V Transition Frequency fT VCE=10V,IC=0.5A 3 — — MHz