TIP3055 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK ● DECEMBER 1970 - REVISED MARCH 1997 Designed for Complementary Use with the TIP2955 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) SYMBOL VALUE Collector-base voltage (IE = 0) RATING VCBO 100 UNIT V Collector-emitter voltage (IB = 0) (see Note 1) VCER 70 V Emitter-base voltage V V EBO 7 Continuous collector current IC 15 A Continuous base current IB 7 A W Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 90 Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W ½LIC 2 62.5 mJ °C Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C This value applies when the base-emitter resistance RBE = 100 Ω. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 10 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP3055 NPN SILICON POWER TRANSISTOR DECEMBER 1970 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER V (BR)CEO ICER ICEO ICEV IEBO hFE VCE(sat) VBE hfe |hfe| TEST CONDITIONS Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Voltage between base and emitter Emitter cut-off current IC = 30 mA IB = 0 VCE = 70 V RBE = 100 Ω VCE = 30 V IB = 0 VCE = 100 V VEB = 7V MIN (see Note 5) 60 mA VBE = -1.5 V 5 mA IC = 0 5 mA VCE = 4V IC = 4A 4V IC = 10 A (see Notes 5 and 6) 20 IB = 0.4 A IC = 4A saturation voltage IB = 3.3 A IC = 10 A 4V IC = 4A VCE = 10 V IC = 0.5 A f = 1 kHz 15 VCE = 10 V IC = 0.5 A f = 1 MHz 3 current transfer ratio Small signal forward current transfer ratio 70 5 Collector-emitter Small signal forward V 0.7 V CE = VCE = UNIT mA transfer ratio voltage MAX 1 Forward current Base-emitter TYP 1.1 (see Notes 5 and 6) 3 (see Notes 5 and 6) V 1.8 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.39 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † † MIN ton Turn-on time IC = 6 A IB(on) = 0.6 A IB(off) = -0.6 A toff Turn-off time V BE(off) = -4 V RL = 5 Ω tp = 20 µs, dc ≤ 2% Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TYP 0.6 µs 1 µs TIP3055 NPN SILICON POWER TRANSISTOR DECEMBER 1970 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS637AD 1000 hFE - DC Current Gain VCE = 4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 0·01 0·1 1·0 10 IC - Collector Current - A Figure 1. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS637AB tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1·0 0·1 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 2. PRODUCT INFORMATION 3 TIP3055 NPN SILICON POWER TRANSISTOR DECEMBER 1970 - REVISED MARCH 1997 THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS637AB Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 TC - Case Temperature - °C Figure 3. PRODUCT 4 INFORMATION 125 150 TIP3055 NPN SILICON POWER TRANSISTOR DECEMBER 1970 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 15,2 14,7 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT MDXXAW INFORMATION 5 TIP3055 NPN SILICON POWER TRANSISTOR DECEMBER 1970 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION