Inchange Semiconductor Product Specification TIP3055 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type TIP2955 ・90 W at 25°C case temperature ・15 A continuous collector current APPLICATIONS ・Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 Absolute maximum ratings(Ta=℃) 固电 SYMBOL D N O IC VALUE UNIT Open emitter 100 V Open base 60 V Open collector 7 V Collector current 15 A IB Base current 7 A PC Collector power dissipation 90 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.39 ℃/W VCBO VCEO VEBO IC PARAMETER R O T UC Collector-base voltage E SEM G N A H Collector-emitter voltage INC CONDITIONS Emitter-base voltage TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification TIP3055 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=30mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4A 1.1 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A 3.0 V VBE Base-emitter on voltage IC=4A ; VCE=4V 1.5 V ICEO Collector cut-off current VCE=30V; IB=0 0.7 mA ICER Collector cut-off current VCE=70Vdc;RBE=100Ohm 1.0 mA ICEV Collector cut-off current VCE=100Vdc,VBE(off)=1.5Vdc 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain hFE-2 Is/b fT 体 导 半 固电 CONDITIONS IC=4A ; VCE=4V MIN TYP. MAX 60 V D N O IC R O T UC 20 UNIT 70 DC current gain IC=10A ; VCE=4V Second breakdown collector current With base forward biased VCE=30Vdc,t=1.0s, Nonrepetitive 3.0 A IC=0.5A ; VCE=10V 2.5 MHz INC EM S E G N A H Transition frequency 2 5.0 Inchange Semiconductor Product Specification TIP3055 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification TIP3055 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC