BFP450 High Linearity Low Noise Si NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP450 Revision History Page or Item Subjects (changes since previous revision) Revision 1.0, 2010-10-22 This datasheet replaces the revision from 20 April 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet have been expanded and updated. The old datasheet revision remains fully valid for those customers who have got the revision from 20 April 2007. 1 Maximum collector current ICmax increased from 100 mA to 170 mA and maximum DC power dissipation Ptot from 450 mW to 500 mW . 2 Typical values for leakage currents included. 3 Description of electrical parameters updated. 4, 5 Spice GP model parameters removed from datasheet, updated model parameters shifted to the internet simulation data section. 6 Pulse load curves removed. 7, 8 AC characteristic curves updated. 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VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-06-09 Data Sheet 3 Revision 1.0, 2010-10-22 BFP450 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 4.1 4.2 4.3 4.4 4.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 6 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Data Sheet 4 10 10 10 11 15 18 Revision 1.0, 2010-10-22 BFP450 List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Data Sheet Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 BFP450 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 15 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 16 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 16 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 17 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . 18 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 20 Maximum Power Gain Gmax = f (VCE), IC = 90 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 20 Input Matching S11 = f ( f ), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . 21 Output Matching S22 = f ( f ), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 50 / 90 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . 22 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . 24 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Marking Description (Marking BFP450: ANs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 5 Revision 1.0, 2010-10-22 BFP450 List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Data Sheet Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision 1.0, 2010-10-22 High Linearity Low Noise Si NPN RF Transistor 1 • • • • • • • • BFP450 Features Highly linear low noise driver amplifier for all RF frontends up to 2.5 GHz Output compression point OP1dB = 18.5 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system Output 3rd order intermodulation point OIP3 = 31 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz Based on Infineon´s reliable, high volume 25 GHz SIEGET™ line Easy to use Pb-free (RoHS compliant) standard package with visible leads Qualified according AEC Q101 3 2 4 1 Application Examples Driver amplifier • • • ISM bands 434 and 868 MHz 1.9 GHz cordless phones CATV LNA Transmitter driver amplifier • 2.4 GHz WLAN and Bluetooth Output stage LNA for active antennas • TV, GPS, SDARS, 2.4 GHz WLAN, etc Suitable for 3 - 5.5 GHz oscillators Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP450 SOT343 Data Sheet Pin Configuration 1=B 2=E 7 3=C Marking 4=E ANs Revision 1.0, 2010-10-22 BFP450 Maximum Ratings 2 Maximum Ratings Table 1 Maximum Ratings Parameter Symbol Values Unit Min. Collector emitter voltage Note / Test Condition Max. VCEO Open base – 4.5 V TA = 25 °C – 4.1 V TA = -55 °C Collector emitter voltage VCES – 15 V Emitter / base shortened Collector base voltage VCBO – 15 V Open emitter Emitter base voltage VEBO – 1.5 V Open collector Collector current IC – 170 mA – IB – 10 mA – Ptot – 500 mW TS ≤ 90 °C TJ – 150 °C – Base current Total power dissipation Junction temperature 1) Storage temperature TStg -65 150 °C – 1)TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 8 Revision 1.0, 2010-10-22 BFP450 Thermal Characteristics 3 Thermal Characteristics Table 2 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS – – 120 K/W 1)For calculation of RthJA please refer to Application Note Thermal Resistance AN077 – 600 500 Ptot [mW] 400 300 200 100 0 0 50 100 150 Ts [°C] Figure 1 Data Sheet Total Power Dissipation Ptot = f (Ts) 9 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 4 Electrical Characteristics 4.1 DC Characteristics Table 3 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Values Min. Typ. Max. 4.5 5 – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base Collector emitter leakage current ICES – – 10 µA VCE = 15 V, VBE = 0 – 1 30 nA VCE = 3 V, VBE = 0 Emitter/base shortened Collector base leakage current ICBO – 1 30 nA VCB = 3 V, IE = 0 Open emitter Emitter base leakage current IEBO – 0.1 3 µA VEB = 0.5 V, IC = 0 Open collector DC current gain hFE 60 95 130 VCE = 4 V, IC = 50 mA 50 85 120 VCE = 3 V, IC = 90 mA Pulse measured 4.2 General AC Characteristics Table 4 General AC Characteristics at TA = 25 °C Parameter Transition frequency Symbol fT Values Min. Typ. Max. 18 24 – Unit Note / Test Condition GHz VCE = 3 V, IC = 90 mA, f = 1 GHz Collector base capacitance CCB – 0.48 0.8 pF VCB = 3 V, VBE = 0 V f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 1.2 – pF VCE = 3 V, VBE = 0 V f = 1 MHz Base grounded Emitter base capacitance CEB – 1.7 – pF VEB = 0.5 V, VCB = 0 V f = 1 MHz Collector grounded Data Sheet 10 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 4.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C B E VB Bias-T (Pin 1) IN Figure 2 BFP450 Testing Circuit Table 5 AC Characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gms – 34.5 – IC = 50 mA Class A operation point Gms – 35.5 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 33 – IC = 50 mA Class A operation point S21 – 33.5 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.55 – IC = 50 mA Associated gain Gass – 32 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 30.5 – IC = 90 mA Data Sheet 11 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics Table 6 AC Characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gms – 28.5 – IC = 50 mA Class A operation point Gms – 29 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 25 – IC = 50 mA Class A operation point S21 – 25 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.55 – IC = 50 mA Associated gain Gass – 27.5 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 30 – IC = 90 mA Table 7 AC Characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gms – 23 – IC = 50 mA Class A operation point Gms – 23.5 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 18.5 – IC = 50 mA Class A operation point S21 – 19 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.6 – IC = 50 mA Associated gain Gass – 23 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 30.5 – IC = 90 mA Data Sheet 12 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics Table 8 AC Characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gma – 18 – IC = 50 mA Class A operation point Gma – 18 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 14 – IC = 50 mA Class A operation point S21 – 14 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.65 – IC = 50 mA Associated gain Gass – 17 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 31 – IC = 90 mA Table 9 AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gma – 15.5 – IC = 50 mA Class A operation point Gma – 15.5 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 9.5 11.5 – IC = 50 mA Class A operation point S21 – 11.5 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.7 – IC = 50 mA Associated gain Gass – 14 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 31 – IC = 90 mA Data Sheet 13 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics Table 10 AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gma – 13.5 – IC = 50 mA Class A operation point Gma – 13.5 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 9.5 – IC = 50 mA Class A operation point S21 – 9.5 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.8 – IC = 50 mA Associated gain Gass – 12 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 30 – IC = 90 mA Table 11 AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gma – 10 – IC = 50 mA Class A operation point Gma – 10 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 5.5 – IC = 50 mA Class A operation point S21 – 6 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 2.05 – IC = 50 mA Associated gain Gass – 9 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 18.5 – IC = 90 mA 3rd order intercept point OIP3 – 29.5 – IC = 90 mA Note: 1. AC paramter limits verified by random sampling 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured result 3. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 14 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 4.4 Characteristic DC Diagrams 160 1.90mA 140 1.71mA 1.52mA 120 1.33mA 1.14mA 80 0.95mA IC [mA] 100 0.76mA 60 0.57mA 40 0.38mA 20 0 0.19mA 0 1 2 3 4 5 VCE [V] Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter 120 110 100 hFE 90 80 70 60 50 0.1 1 10 100 1000 IC [mA] Figure 4 Data Sheet DC Current Gain hFE = f (IC), VCE = 3 V 15 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 1000 100 IC [mA] 10 1 0.1 0.01 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VBE [V] Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V 10 IB [mA] 1 0.1 0.01 0.001 0.0001 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VBE [V] Figure 6 Data Sheet Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V 16 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 1.E-05 IB [A] 1.E-06 1.E-07 1.E-08 1.E-09 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VEB [V] Figure 7 Data Sheet Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V 17 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 4.5 Characteristic AC Diagrams 30 25 4.00V 3.00V 2.00V 15 1.00V f T [GHz] 20 10 5 0 0 20 40 60 80 100 I [mA] 120 140 160 180 160 180 C Figure 8 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter 34 32 OIP3 [dBm] 30 28 3V, 0.9GHz 4V, 0.9GHz 3V, 1.9GHz 4V, 1.9GHz 26 24 22 20 18 Figure 9 Data Sheet 0 20 40 60 80 100 IC [mA] 120 140 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters 18 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 1.2 1 Ccb [pF] 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 V CB Figure 10 2.5 3 3.5 4 [V] Collector Base Capacitance CCB = f (VCB), f = 1 MHz 42 39 36 33 30 G ms G [dB] 27 24 21 G ma 18 15 |S |2 21 12 9 6 3 0 Figure 11 Data Sheet 0 0.5 1 1.5 2 2.5 3 3.5 f [GHz] 4 4.5 5 5.5 6 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 90 mA 19 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 39 0.15GHz 36 33 30 0.45GHz 27 G [dB] 24 0.90GHz 21 18 1.50GHz 1.90GHz 2.40GHz 15 12 3.50GHz 9 5.50GHz 6 3 0 0 20 40 60 80 I C Figure 12 100 120 [mA] 140 160 180 200 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz 39 36 0.15GHz 33 30 0.45GHz 27 G [dB] 24 0.90GHz 21 1.50GHz 1.90GHz 2.40GHz 18 15 12 3.50GHz 9 5.50GHz 6 3 0 0.5 Figure 13 Data Sheet 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 Maximum Power Gain Gmax = f (VCE), IC = 90 mA, f = Parameter in GHz 20 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 1 1.5 0.5 6 8 7 9 2 10 5 0.4 4 3 0.3 3 0.2 4 5 2 0.03 to 10 GHz 0.1 10 1 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 90 mA 50 mA −1 Figure 14 Input Matching S11 = f ( f ), VCE = 3 V, IC = 50 / 90 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.45GHz 0.1 0 0.1 10 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 0.9GHz −0.1 −10 1.9GHz −0.2 2.4GHz I = 50mA −5 −4 c I = 90mA c −0.3 −3 −0.4 −0.5 −2 −1.5 −1 Figure 15 Data Sheet Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 50 / 90 mA 21 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 1 1.5 0.5 2 0.4 9 8 7 10 6 0.3 3 5 4 4 0.2 5 3 0.1 0.03 to 10 GHz 10 2 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 1 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 90 mA 50 mA −1 Figure 16 Output Matching S22 = f ( f ), VCE = 3 V, IC = 50 / 90 mA 3 2.5 NFmin [dB] 2 1.5 IC = 90mA IC = 50mA 1 0.5 0 Figure 17 Data Sheet 0 0.5 1 1.5 f [GHz] 2 2.5 3 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 50 / 90 mA, ZS = Zopt 22 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 3 2.5 NFmin [dB] 2 1.5 f = 2.4GHz f = 1.9GHz 1 f = 0.9GHz f = 0.45GHz 0.5 0 0 20 40 60 80 100 I [mA] c Figure 18 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz 4.5 4 3.5 NF50 [dB] 3 2.5 f = 2.4GHz f = 1.9GHz 2 f = 0.9GHz 1.5 f = 0.45GHz 1 0.5 0 20 40 60 80 100 Ic [mA] Figure 19 Data Sheet Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz 23 Revision 1.0, 2010-10-22 BFP450 Electrical Characteristics 4.5 4 3.5 NF [dB] 3 2.5 2 1.5 ZS = 50Ω ZS = ZSopt 1 0.5 0 20 40 60 80 100 I [mA] c Figure 20 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25°C. Data Sheet 24 Revision 1.0, 2010-10-22 BFP450 Simulation Data 5 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP450 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP450 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Data Sheet 25 Revision 1.0, 2010-10-22 BFP450 Package Information SOT343 6 Package Information SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 2 0.3 +0.1 -0.05 +0.1 0.15 -0.05 0.6 +0.1 -0.05 4x 0.1 M 0.2 M A SOT343-PO V08 Figure 21 Package Outline 1.6 0.8 0.6 1.15 0.9 SOT343-FP V08 Figure 22 Package Foot Print XY s 96 Manufacturer 2009, June Date Code(YM) Marking Pin 1 Figure 23 Marking Description (Marking BFP450: ANs) 0.2 2.3 8 4 Pin 1 2.15 1.1 SOT323-TP V02 Figure 24 Data Sheet Tape Dimensions 26 Revision 1.0, 2010-10-22 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG