INTERSIL ISL25700FRUZ-T

ISL25700
Features
The Temperature Controlled MOSFET Driver is a highly
integrated solution that combines a MOSFET driver with
overcurrent protection and two 8-bit resolution DACs on
a monolithic CMOS integrated circuit (IC).
• User-programmable Setpoint via I2C Serial Interface
The ISL25700 sets up and monitors temperature at the
point of interest, compares it with the user programmable
setpoint, and adjusts the output until the set temperature is
reached. An external power MOSFET, a heater, an NTC
thermistor and the ISL25700 are parts of the temperature
control loop.
It also features programmable overcurrent protection of
the MOSFET. The current protection automatically adjusts
the output voltage in order to keep MOSFET power under
user defined limits. The protection settings always
override the temperature settings that cause violation of
the current limit.
• Setpoint Temperature Range from +40°C to +110°C
• Operational Temperature Range from -40°C to +125°C
• 3°C Initial Setpoint Accuracy
• Coarse and Fine Tuning Setpoint Control
- +15°C Coarse Adjustment
- +0.1°C Fine Adjustment
• ±0.5°C Long-term Drift Error
• Programmable Current Protection of External MOSFET
• 5-bit Selectable Gain Control
• Wide Power Supply Range: 3V to 15V
• Works with 20kΩ to 200kΩ External NTC Thermistor
• General Purpose 8-bit DAC - 0.4% Output Resolution
There is an additional 8-bit General Purpose DAC that is
available for application specific use.
• High Reliability
- Endurance: 10,000 Data Changes per Bit per Register
- Register Data Retention: 10 years @ T ≤ +125°C
The ISL25700 can be used in a variety of applications
where constant temperature is a key parameter.
• 10 Lead μTQFN 2.1mmx1.6mm Package
• Pb-free (RoHS Compliant)
Applications*(see page 17)
• Oven Controlled Applications with Micro Temperature
Chamber in:
- Basestations
- Spectrometers
- Precision Meters
- Precision Generators
100
TEMPERATURE (°C)
80
60
40
20
0
0
3
6
9
12
15
TIME (MINUTES)
FIGURE 1. TYPICAL TEMPERATURE SETTLING TIME
September 3, 2010
FN6885.0
1
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ISL25700
Programmable Temperature Controlled MOSFET Driver
ISL25700
Block Diagram/Application Circuit
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ISL25700
Pin Configuration
ISL25700
(10 LD μTQFN)
TOP VIEW
VDD 1
10
NC
O
9 CCOMP
8 ISENSE
SDA 3
7 VOUT
GND 4
6 VDAC
5
SCL 2
RTH
Pin Descriptions
μTQFN PIN
SYMBOL
DESCRIPTION
1
VDD
Power supply. This pins supplies the power necessary to operate the chip.
2
SCL
I2C interface input clock. This input is the serial clock of the I2C serial interface.
SCL requires an external pull-up resistor. It has an internal pull-down resistor of ~3MΩ to
prevent a floating input if the pin will be left unconnected.
3
SDA
Open Drain Serial Data Input/Output for the I2C interface. The SDA is a bidirectional serial
data input/output pin for I2C interface. It receives device address, operation code and data
from an I2C external master device at the rising edge of the serial clock SCL, and it shifts out
data after each falling edge of the serial clock.
The SDA pin requires an external pull-up resistor. It has an internal pull-down resistor of
~3MΩ to prevent a floating input if the pin will be left unconnected.
4
GND
Ground. Bias and reference ground of the chip.
5
RTH
External NTC thermistor. An external NTC thermistor makes one shoulder of the Wheatstone
bridge and must be connected between the RTH pin and GND.
6
VDAC
DAC Output. This is the output of the precision 8-bit DAC. Default DAC output is in the range
of 0V to 2V. The DAC output range can be extended with a gain of 2 by setting the DAC Gain
bit.
7
VOUT
Output voltage that controls an external P-MOSFET. This pin drives an external P-MOSFET
proportional to unbalanced condition of the Wheatstone bridge.
8
ISENSE
Current Sense input. This pin monitors voltage drop over an external current sense resistor
RSENSE. Power dissipation of the P-MOSFET will be limited when ISENSE exceeds the voltage
drop limit set in the Current Sense Register.
9
CCOMP
Compensation capacitor. A compensation ceramic capacitor must be added between CCOMP
and GND to increase chip stability. This capacitor provides a negative feedback for the
operational amplifier and its value can be from 30pF to 1000pF.
10
NC
Not internally connected.
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ISL25700
Ordering Information
PART NUMBER
(Notes 1, 2, 3)
PART
MARKING
UNITS
PER REEL
TEMP RANGE
(°C)
PACKAGE
(Pb-free)
PKG.
DWG. #
ISL25700FRUZ-T
GT
3000
-40 to +125
10 Ld 2.1x1.6 μTQFN
L10.2.1x1.6A
ISL25700FRUZ-TK
GT
1000
-40 to +125
10 Ld 2.1x1.6 μTQFN
L10.2.1x1.6A
ISL25700FRUZ-T7A
GT
250
-40 to +125
10 Ld 2.1x1.6 μTQFN
L10.2.1x1.6A
NOTES:
1. Please refer to TB347 for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach
materials and NiPdAu plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free
soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed
the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), please see device information page for ISL25700. For more information on MSL please
see techbrief TB363.
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ISL25700
Absolute Maximum Ratings
Thermal Information
Voltage at any Digital Interface Pin
with respect to GND. . . . . . . . . . . . . . . . . . . . -0.3V to 6V
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +16.5V
ESD Rating
Human Body Model (Tested per JESD22-A114F) . . . . . 5kV
Machine Model (Tested per JESD22-A115B) . . . . . . . 200V
Latchup. . . . . . . . . . . . . . . . . . .Class II, Level A at +125°C
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
10 Ld μTQFN Package (Note 4, 5) .
135
75
Storage Temperature . . . . . . . . . . . . . . . -65°C to +150°C
Maximum Junction Temperature (Plastic Package) . . +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Temperature Range (Full-range Industrial) . . . . -40°C to +125°C
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V to 15V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact
product reliability and result in failures not covered by warranty.
NOTES:
4. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
5. For θJC the “case temp” location is the center on the top of package.
Analog Specifications
SYMBOL
TSET
Over recommended operating conditions unless otherwise stated. Boldface limits apply over
the operating temperature range, -40°C to +125°C.
PARAMETER
Temperature Set Point
MIN
(Note 13)
TEST CONDITIONS
TSET must be above
ambient
TSET_FINE
°C
MAX
110
°C
±3
°C
15
°C
0.1
°C
RTH = 100k @ +25°C,
B25/85 = 4100k (Note 14)
Fine Adjustment of Set Point
TSET_FINE_DNL Fine Control Differential
(Note 8)
Non-linearity
Long-term Drift of Set Point
ITH
Thermistor Current Range
RTH
NTC Thermistor Range
VOUT
IOUT
VSENSE
-2.5
±0.9
+2.5
LSB
(Note 7)
-2
±0.5
+2
LSB
(Note 7)
1000h, Reg.1 = x2h, Reg.2 = 80h,
Reg.3 = 90h
Resistance @ +25°C
External P-MOSFET Gate Voltage IOUT = 0μA
VOUT Swing @ Fixed VDD
IOUT = 0μA
UNITS
40
TSET_FINE_INL Fine Control Integral
(Note 9)
Non-linearity
TDRIFT
MAX
(Note 13)
MIN
Temperature Set Point Accuracy 3 sigma standard deviation
TSET_COARSE Coarse Adjustment of Set Point
TYP
(Note 6)
±0.5
°C
25
40
55
μA
20
100
200
kΩ
VDD
V
0.25
MIN
VDD - 2.5
Output Current
V
7
Overcurrent Protection Set Point VSENSE = ISENSE x RSENSE;
see Table 3
200 to 1750
μA
mV
GENERAL PURPOSE DAC (MEASUREMENTS BETWEEN GND AND VDAC)
VDAC MAX
Maximum DAC Output
Using internal VREF, VDD ≤ 5V, No
load, Gain = 1
2
2.5
V
VDD > 5V, No load, Gain = 2
4
5.0
V
INL
(Note 9)
Integral Non-Linearity
No load
-1
±0.4
+1
LSB
(Note 7)
DNL
(Note 8)
Differential Non-linearity
No load
-0.75
±0.3
+0.75
LSB
(Note 7)
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ISL25700
Analog Specifications
SYMBOL
Over recommended operating conditions unless otherwise stated. Boldface limits apply over
the operating temperature range, -40°C to +125°C. (Continued)
PARAMETER
TEST CONDITIONS
VDAC_OFFSET Offset
DAC register set to 0, No load
ROUT
DAC Output Impedance
PSRR
Power Supply Rejection Ratio
Temperature Coefficient
TCV
(Notes 10,
11)
Operating Specifications
SYMBOL
MAX
(Note 13)
0
0.2
1
UNITS
LSB
(Note 7)
Ω
DAC at middle scale, frequency
from 0Hz to 25kHz
-85
dB
DAC register set between 20 hex
and FF hex
±45
ppm/°C
Over the recommended operating conditions unless otherwise specified. Boldface limits
apply over the operating temperature range, -40°C to +125°C.
PARAMETER
TEST CONDITIONS
VDD Supply Current
(Non-Volatile Write/read)
fSCL = 400kHz; SDA = Open;
(for I2C, Active, Read and Write
States) IPMOS = 0mA, DAC unload
IDD2
VDD Supply Current
(Volatile Write/read)
IPMOS = 0mA, DAC unload
Leakage Current, at SDA and
SCL Pins
Voltage at pin from GND to VCC
tDAC
DAC Settling Time
(Note 11)
VPOR
TYP
(Note 6)
350
IDD1
ILkgDig
MIN
(Note 13)
Power-On Recall Voltage
MIN
TYP
MAX
(Note 13) (Note 6) (Note 13) UNITS
-2
From bus STOP condition to VDAC
change
Minimum VDD at which memory recall
occurs
VDD Ramp VDD Ramp Rate
@ any level from 0V to 15V
tD
Power-Up Delay
(Note 11)
VDD above VPOR, to DAC Register recall
completed, and I2C Interface in
standby state
2.5
0.2
4
mA
2.8
mA
2
μA
3
μs
2.9
V
50
V/ms
1
ms
EEPROM SPECIFICATIONS
EEPROM Endurance
10,000
Cycles
Temperature ≤ +55°C
50
Years
Temperature ≤ +125°C
10
Years
I2C Bus Voltage
VI2C ≤ VDD
2.7
VIL
SDA, and SCL Input Buffer
LOW Voltage
VI2C from 2.7V to 5.5V
VIH
SDA, and SCL Input Buffer
HIGH Voltage
VI2C from 2.7V to 5.5V
EEPROM Retention
SERIAL INTERFACE SPECIFICATIONS
VI2C
Hysteresis SDA and SCL Input Buffer
(Note 11) Hysteresis
VOL
SDA Output Buffer LOW
(Note 11) Voltage, Sinking 4mA
fSCL
SCL Frequency
tIN
Pulse Width Suppression Time
(Note 11) at SDA and SCL Inputs
6
Any pulse narrower than the max spec
is suppressed
V
0.8
V
1.4
V
0.05*VI2C
V
0
Cpin
SDA, and SCL Pin Capacitance
(Note 11)
5.5
0.4
V
10
pF
400
kHz
50
ns
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September 3, 2010
ISL25700
Operating Specifications
SYMBOL
Over the recommended operating conditions unless otherwise specified. Boldface limits
apply over the operating temperature range, -40°C to +125°C. (Continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
(Note 13) (Note 6) (Note 13) UNITS
tAA
SCL Falling Edge to SDA
(Note 11) Output Data Valid
SCL falling edge crossing 30% of VI2C,
until SDA exits the 30% to 70% of
VI2C window
900
ns
tBUF
Time the Bus Must be Free
(Note 11) Before the Start of a New
Transmission
SDA crossing 70% of VI2C during a
STOP condition, to SDA crossing 70%
of VI2C during the following START
condition
1300
ns
tLOW
Clock LOW Time
Measured at the 30% of VI2C crossing
1300
ns
tHIGH
Clock HIGH Time
Measured at the 70% of VI2C crossing
600
ns
tSU:STA
START Condition Setup Time
SCL rising edge to SDA falling edge.
Both crossing 70% of VI2C.
600
ns
tHD:STA
START Condition Hold Time
From SDA falling edge crossing 30%
of VI2C to SCL falling edge crossing
70% of VI2C
600
ns
tSU:DAT
Input Data Setup Time
From SDA exiting the 30% to 70% of
VI2C window, to SCL rising edge
crossing 30% of VI2C
100
ns
tHD:DAT
Input Data Hold Time
From SCL falling edge crossing 70% of
VI2C to SDA entering the 30% to 70%
of VI2C window
0
ns
tSU:STO
STOP Condition Setup Time
From SCL rising edge crossing 70% of
VI2C, to SDA rising edge crossing 30%
of VI2C
600
ns
tDH
Output Data Hold Time
From SCL falling edge crossing 30% of
VI2C, until SDA enters the 30% to
70% of VI2C window
0
ns
tR
SDA and SCL Rise Time
From 30% to 70% of VI2C
20 +
0.1 * Cb
250
ns
tF
SDA and SCL Fall Time
From 70% to 30% of VI2C
20 +
0.1 * Cb
250
ns
Cb
Capacitive Loading of SDA or SCL Total on-chip and off-chip
10
400
Rpu
SDA and SCL Bus Pull-Up
(Note 11) Resistor Off-Chip
tWC
(Notes
11, 12)
Maximum is determined by tR and tF.
For Cb = 400pF, max is about 2~2.5kΩ.
For Cb = 40pF, max is about 15~20kΩ
Non-Volatile Write Cycle Time
1
pF
kΩ
15
20
ms
NOTES:
6. Typical values are for TA = +25°C and 12V supply voltage.
7. LSB: [VDAC255 – VDAC0]/255. VDAC255 and VDAC0 are the DAC output voltage when DAC register set to FF hex and 00 hex
respectively.
8. DNL = [VDACi – VDACi-1]/LSB-1, for i = 1 to 255. i is the DAC register setting.
9. INL = [VDACi – (i • LSB + VDAC0)]/LSB for i = 1 to 255.
VDAC i ( T ) – VDAC i ( 40°C )
10 6
TC V = ------------------------------------------------------------------------ × ---------------------------( T – 40 )°C for i = 1 to 255 decimal, T = -40°C to +125°C, referenced to 40°C.
VDAC i ( 40°C )
10.
11. Limits established by characterization and are not production tested.
12. tWC is the time from a valid STOP condition at the end of a Write sequence of a I2C serial interface Write operation, to the
end of the self-timed internal non-volatile write cycle. The Busy Polling method can be used to determine the end of the
non-volatile write cycle.
13. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established
by characterization and are not production tested.
14. B25/85 is a thermistor material specific constant; represents the slope of the Resistance vs. Temperature curve.
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ISL25700
SDA vs SCL Timing
tF
SCL
tHIGH
tLOW
tR
tWC
tSU:DAT
tSU:STA
tHD:DAT
tHD:STA
SDA
(INPUT TIMING)
tSU:STO
tAA
tDH
tBUF
SDA
(OUTPUT TIMING)
Typical Performance Curves
2.5
VDD = 15V
VDD = 12V
MEASURED AT RT PIN
CCOMP = 10nF
AFTER 10 MIN SETTLING TIME
MARKER = 14.6μV/√Hz
15
NOISE (μV/√Hz)
IDD (mA)
2.0
1.5
1.0
VDD = 5V
VDD = 3V
0.5
0.0
-40
-20
0
20
40
60
80
100
TEMPERATURE (°C)
FIGURE 2. SUPPLY CURRENT IDD vs VDD
10
5
120
0
0.1
1.0
10
FREQUENCY (Hz)
100
FIGURE 3. NOISE LEVEL AT RTH INPUT IN CLOSE LOOP
APPLICATION 2μV/√Hz @ 1Hz
VDD = 12V
VOUT
0.5ms/DIVISION
FIGURE 4. VOUT POWER UP DELAY
8
VDAC
0.5μs/DIVISION
FIGURE 5. GP DAC SETTLING TIME (FULL SCALE,
GAIN = 2)
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ISL25700
Typical Performance Curves
0.2
(Continued)
0.2
GAIN = 1
GAIN = 1
0.1
DNL (LSB)
DNL (LSB)
0.1
0.0
-0.1
-0.2
0.0
-0.1
-0.2
GAIN = 2
-0.3
0
50
100
150
200
-0.3
250
0
50
100
150
200
FIGURE 7. GP DAC DNL vs CODE VDD = 5V
FIGURE 6. GP DAC DNL vs CODE VDD = 3V
0.5
0.2
GAIN = 1
GAIN = 1
0.3
INL (LSB)
0.1
DNL (LSB)
250
CODE (DECIMAL)
CODE (DECIMAL)
0
-0.1
0.1
-0.1
-0.3
-0.2
GAIN = 2
-0.3
0
50
100
150
200
-0.5
0
250
50
CODE (DECIMAL)
100
FIGURE 8. GP DAC DNL vs CODE VDD = 15V
250
0.5
0.3
0.3
GAIN = 1
GAIN = 1
INL (LSB)
INL (LSB)
200
FIGURE 9. GP DAC INL vs CODE VDD = 3V
0.5
0.1
-0.1
-0.3
-0.5
0
150
CODE (DECIMAL)
100
150
200
CODE (DECIMAL)
FIGURE 10. GP DAC INL vs CODE VDD = 5V
9
-0.1
-0.3
GAIN = 2
50
0.1
GAIN = 2
250
-0.5
0
50
100
150
200
250
CODE (DECIMAL)
FIGURE 11. GP DAC INL vs CODE VDD = 15V
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September 3, 2010
ISL25700
Typical Performance Curves
(Continued)
GAIN ERROR (%)
0.5
0.3
0.1
VDD = 15V
VDD = 5V
-0.1
-0.3
-0.5
5
55
105
155
205
255
CODE (DECIMAL)
FIGURE 12. GP DAC GAIN ERROR
Principles of Operation
The ISL25700 allows for precisely controlling the
temperature of an external object and/or power
dissipation of the external P-MOSFET. The temperature
control is done by continuously sensing resistance of
the NTC thermistor, and adjusting the current flow
through the P-MOSFET (temperature controlling
element).
ISL25700 drives the P-MOSFET proportionally inverted
to the difference between the object temperature and
target temperature set point (TSET), set by the user
through the I2C serial interface. Temperature is sensed
by the external NTC thermistor and converted to a
driving voltage by the Wheatstone bridge and its
amplifier. One leg of the current-mode Wheatstone
bridge contains an external NTC thermistor with the
programmable 8-bit FTC DAC and another leg contains
the selectable current source K1 that feeds an internal
resistor RINT.
The 8-bit FTC DAC allows fine-tuning the TSET with
resolution better than +0.1°C within a +15°C coarse
temperature range window. The TSET temperature is set
through the Temperature Coarse Range Control Register,
Reg.01h[2:0], and the Fine Temperature Control
Register, Reg.02h[7:0]; refer to “ISL25700 MEMORY
MAP” on page 11. A +15°C temperature coarse range
window can be centered on TSET point based on the
thermistor’s parameters, such as resistance, R/T curve
type, tolerance and NTC slope and by adjusting a current
ratio flowing through the legs of the Wheatstone bridge.
Note that the TSET target temperature should be higher
than the anticipated maximum ambient temperature for
the application.
The internal current sensing circuitry provides the
ability to control and adjust the power dissipated in the
P-MOSFET through the Current Sense Register,
Reg.01h[7:3]. This function allows for adjusting the
initial turn on heating curve and protects from
over-heating of the P-MOSFET. An external current
sensing resistor RSENSE, serial with the P-MOSFET, is
required. A current limit can be selected for the chosen
RSENSE. It should have an effective voltage drop from
200mV to 1750mV and be inside the safe operating
area of the MOSFET.
A General Purpose 8-bit DAC, GP DAC provides a
programmable voltage output VDAC through the General
Purpose DAC Register, Reg.04h[7:0]. The output swing of
General Purpose DAC can be set through the Gain
Control bit in Reg.03h[6] or totally disabled by resetting
the DAC Enable Bit in Reg.03h[7].
Memory Map
The are two types of memory banks in the chip;
volatile (RAM) and non-volatile (EEPROM). Volatile
registers from address 00h to 07h are identical to
non-volatile registers in terms of the register’s name
and bit definitions. All the data is recalled from
non-volatile registers and maintained in the volatile
registers at power-up. It is possible to do independent
write/read to the volatile and non-volatile banks after
power-up by setting NV bit in the Control/Status
Register, Reg.08h[7]. Note that the data written to the
non-volatile registers will be automatically written to
corresponding volatile registers, however no direct
reading from non-volatile registers is possible. All the
readings are from corresponding volatile registers.
The Memory Map of the chip is in Table 1.
There are total of 32 system gain settings available in
the Gain Control Register, Reg.03h[4:0], with 0.35dB
resolution per step. The gain control allows to prevent
the thermal system from oscillation by adjusting the
total system gain remotely, without use of external
components.
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ISL25700
TABLE 1. ISL25700 MEMORY MAP
BIT MAP
REGISTER
ADDRESS
7
6
5
4
3
2
1
0
DEFAULT
SETTINGS
Device ID (Read Only)
00h
ID[7]
ID[6]
ID[5]
ID[4]
ID[3]
ID[2]
ID[1]
ID[0]
00h
Current Sense/
Coarse Temperature Control
01h
CS[4]
CS[3]
CS[2]
CS[1]
CS[0]
CTC[2] CTC[1] CTC[0]
03h
Fine Temperature Control
02h
FTC[7] FTC[6] FTC[5] FTC[4] FTC[3] FTC[2] FTC[1] FTC[0]
80h
Gain Control (DAC Enable/
DAC Gain/System Loop Gain)
03h
DAC
Enable
SLG[4] SLG[3] SLG[2] SLG[1] SLG[0]
90h
General Purpose DAC
04h
DAC[7] DAC[6] DAC[5] DAC[4] DAC[3] DAC[2] DAC[1] DAC[0]
80h
General Purpose Register 1
05h
GP1[7] GP1[6] GP1[5] GP1[4] GP1[3] GP1[2] GP1[1] GP1[0]
00h
General Purpose Register 2
06h
GP2[7] GP2[6] GP2[5] GP2[4] GP2[3] GP2[2] GP2[1] GP2[0]
00h
RINT Absolute Error (Read Only)
07h
sign bit ERR[6] ERR[5] ERR[4] ERR[3] ERR[2] ERR[1] ERR[0]
XX
Control/Status Register
(Volatile Only)
08h
REGISTER NAME
DAC
Gain
NV
NA
Device ID Register (Reg.00h)
This is a read only register. It contains device ID code 00h.
Coarse Temperature Control (Reg.01h [2:0])
These 3 bits allow one to choose one of the seven coarse
windows for the temperature set point. The default set
point is about +59°C for the 100k RTH thermistor with a
temperature coefficient of -4.25%/°C at +25°C, i.e.
Reg.01h[2:0] = 011b. The temperature set point can be
changed to any other set point within an operational
range from +40°C to +110°C, or use another type of
thermistor, including different resistance value or R/T
curve type (NTC slope), and then center the +15°C
coarse range temperature window on that new setting
based on the ratio of RINT/RTH according to Equation 1:
Code
K2 + K3 × --------------R INT ( T )
255
---------------------------------------- = -------------------------------------------K1
R TH ( setpoint )
(EQ. 1)
NA
NA
NA
NA
NA
BUSY
00h
error stored in Reg.07h[7:0] converted to a decimal
number; bit [7] represents a sign bit, 0 for “+” and 1 for
“-”;
–6
- 1st order temperature coefficient,
α = – 1337 ×10
ppm/°C;
–6
β = 5 ×10
ppm/°C2;
- 2nd order temperature coefficient,
T - temperature in Celsius.
The K1, K2 and K3 coefficients and the thermistor value
range for each Coarse Temperature setting in
Reg.01h[2:0] should be taken according to Table 2.
TABLE 2. COARSE TEMPERATURE RANGE
Register
01h[2:0]
K1
K2
000
where:
NA
K3
THERMISTOR
RESISTANCE RANGE
AT SET POINT (kΩ)
Do not use
001
3
3
2
5.4 to 9.0
RINT - is an internal 9kΩ resistor, forming another leg of
the Wheatstone Bridge;
010
4
3
2
7.2 to 12.0
K1, K2 and K3 - are coefficients representing the ratio of
the current flowing through the legs of the Wheatstone
Bridge;
100
5
3
2
9.0 to 15.0
011
7
3
2
12.6 to 21.0
101
8
3
2
14.4 to 24.0
110
9
3
2
16.2 to 27.0
111
12
3
2
21.6 to 36.0
Code - is the decimal code in the Fine Temperature
Control register 02h.
The value of internal resistor RINT can vary from part to
part and depends on the package temperature. The
actual RINT at temperature T can be calculated using
Equation 2:
R INT ( T ) = R INT ( 25 )x [ 1 + α ( T – 25 ) + β ( T – 25 ) 2 ]
(EQ. 2)
where:
RINT(25) = 9000 + RINT abs. error x 15 - is internal
resistor value at +25°C in Ohms;
RINT abs. error - is a signed integer value of absolute
11
Current Sense Threshold (Reg.01h [7:3])
This register sets the current limit trip point. When the
voltage applied to the ISENSE pin falls below the
programmed voltage threshold, VOUT goes high, thus
forming a negative feedback loop proportional to ISENSE
x RSENSE.
The value for this register should be taken according to
Table 3.
FN6885.0
September 3, 2010
ISL25700
System Loop Gain (Reg.03h [4:0])
TABLE 3. CURRENT SENSE THRESHOLD
SENSE RESISTOR
TYPICAL ERROR (%)
Register
VOLTAGE DROP
01h[7:3]
THRESHOLD
Value VDD - (ISENSE X RSENSE) VDD = 3V VDD = 15V
This 5 bits allow one to adjust a total system loop gain in
±0.35dB per step, according to Table 4.
The default system loop gain depends on the MOSFET
type, thermal conductivity and level of insulation from
the ambient temperature.
00000
VDD - 200mV
±5
+20
00001
VDD - 250mV
±5
+20
00010
VDD - 300mV
±5
+20
00011
VDD - 350mV
±5
+20
Reg.03h[4:0]
LOOP GAIN ADJUSTMENT
(dB)
00100
VDD - 400mV
±5
+20
00000
-5.60
00101
VDD - 450mV
±5
+20
00001
-5.25
00110
VDD - 500mV
±5
+20
00010
-4.90
00111
VDD - 550mV
±5
+20
00011
-4.55
01000
VDD - 600mV
±5
+20
00100
-4.20
01001
VDD - 650mV
±5
+20
00101
-3.85
01010
VDD - 700mV
±5
+20
00110
-3.50
01011
VDD - 750mV
±5
+20
00111
-3.15
01100
VDD - 800mV
±5
+20
01000
-2.80
01101
VDD - 850mV
±5
+20
01001
-2.45
01110
VDD - 900mV
±5
+20
01010
-2.10
01111
VDD - 950mV
±5
+20
01011
-1.75
10000
VDD - 1000mV
±5
+20
01100
-1.40
10001
VDD - 1050mV
±5
+20
01101
-1.05
10010
VDD - 1100mV
±5
+20
01110
-0.70
10011
VDD - 1150mV
±5
+20
01111
-0.35
10100
VDD - 1200mV
±5
+20
10000
Initial Gain (default)
10101
VDD - 1250mV
±5
+20
10001
0.35
10110
VDD - 1300mV
±5
+20
10010
0.70
10111
VDD - 1350mV
±5
+20
10011
1.05
11000
VDD - 1400mV
±5
+20
10100
1.40
11001
VDD - 1450mV
±5
+20
10101
1.75
11010
VDD - 1500mV
±5
+20
10110
2.10
11011
VDD - 1550mV
±5
+20
10111
2.45
11100
VDD - 1600mV
±5
+20
11000
2.80
11101
VDD - 1650mV
±5
+20
11001
3.15
11110
VDD - 1700mV
±5
+20
11010
3.50
11111
VDD - 1750mV
±5
+20
11011
3.85
11100
4.20
11101
4.55
11110
4.90
11111
5.25
Fine Temperature Control Register
(Reg.02h [7:0])
This register allows fine tuning to the final temperature
TSET within the predetermined range set in Reg.01h[2:0]
by choosing appropriate code for the 8-bit FTC DAC. The
final temperature can be adjusted with approximately
+0.07°C increment/decrement resolution per step.
12
TABLE 4. SYSTEM LOOP GAIN ADJUSTMENT
FN6885.0
September 3, 2010
ISL25700
DAC Enable and Gain Control (Reg.03h [7:6])
Protocol Conventions
When the DAC Enable bit, Reg.03h[7], is 0, the DAC output
is disabled, regardless of Reg.04h settings. When DAC
Enable bit is 1, the DAC output depends on the settings of
the DAC Gain bit Reg.03[6] and Reg.04h[7:0].
Data states on the SDA line can change only during SCL
LOW periods. SDA state changes during SCL HIGH are
reserved for indicating START and STOP conditions (see
Figure 13). On power-up of the ISL25700, the SDA pin is
in the input mode.
When the DAC Gain bit, Reg.03h[6], is 0, the DAC output
range is from 0V to 2V, i.e. Gain = 1. When the DAC Gain
bit is 1, the DAC output range is from 0V to 4V, i.e.
Gain = 2.
General Purpose DAC Register (Reg.04h [7:0])
This 8-bit register writes directly to the GP DAC to set the
output voltage. The default setting of this register is 80h.
The DAC output depends on the Gain setting in Reg.03h[6].
General Purpose Registers (Reg.05h and
Reg.06h)
These 8-bit General Purpose non-volatile and volatile
registers can be used for application specific purposes.
For example, they can be used to store calibration data
or other valuable system information.
RINT Absolute Error Register (Reg.07h [7:0])
This register contains the difference between the nominal
value and the real value of the internal resistor RINT. The
nominal value of this resistor is 9k and the voltage drop
on this resistor represents the temperature setpoint. The
LSB weight of the RINT absolute error is 15Ω. Refer to
Equation 2 for calculation of RINT.
All I2C interface operations must begin with a START
condition, which is a HIGH to LOW transition of SDA
while SCL is HIGH. The ISL25700 continuously monitors
the SDA and SCL lines for the START condition and does
not respond to any command until this condition is met
(see Figure 13). A START condition is ignored during the
power-up sequence and during internal non-volatile write
cycles.
All I2C interface operations must be terminated by a
STOP condition, which is a LOW to HIGH transition of
SDA while SCL is HIGH (see Figure 13). A STOP condition
at the end of a read operation, or at the end of a write
operation to volatile bytes, only places the device in its
standby mode. A STOP condition during a write operation
to a non-volatile byte initiates an internal non-volatile
write cycle. The device enters its standby state when the
internal non-volatile write cycle is completed.
Control/Status Register (Reg.08h [7:0])
An ACK, Acknowledge, is a software convention used to
indicate a successful data transfer. The transmitting
device, either master or slave, releases the SDA bus
after transmitting 8 bits. During the ninth clock cycle, the
receiver pulls the SDA line LOW to acknowledge the
reception of the 8 bits of data (see Figure 14).
The setting of the NV bit, Reg.08h[7], determines if data
is to be read or written to the non-volatile and/or volatile
memory. When this bit is 0, all operation will be targeted
to non-volatile memory, and the data will be copied to
volatile memory simultaneously. When this bit is 1, all
operation will be targeted to the volatile memory only.
The default setting of the NV bit is 0.
The ISL25700 responds with an ACK after recognition of
a START condition, followed by a valid Identification Byte,
and once again after successful receipt of an Address
Byte. The ISL25700 also responds with an ACK after
receiving a Data Byte of a write operation. The master
must respond with an ACK after receiving a Data Byte of
a read operation.
The Busy bit, Reg.08h[0], is a read only bit. When “1” is
read from this bit, it indicates that the non-volatile cycle
is in progress. Reading from this bit eliminates getting a
NACK if the host attempts to write to the non-volatile
memory before the previous data is stored.
A valid Identification Byte contains 0101000 in seven MSBs.
The LSB is the Read/Write bit. Its value is “1” for a Read
operation and “0” for a Write operation (see Table 5).
I2C Serial Interface
The ISL25700 supports a bidirectional bus oriented
protocol. The protocol defines any device that sends data
onto the bus as a transmitter and the receiving device as
the receiver. The device controlling the transfer is a
master and the device being controlled is the slave. The
master always initiates data transfers and provides the
clock for both transmit and receive operations.
Therefore, the ISL25700 operates as a slave device in all
applications.
TABLE 5. IDENTIFICATION BYTE FORMAT
0
(MSB)
1
0
1
0
0
0
R/W
(LSB)
All communication over the I2C interface is conducted by
sending the MSB of each byte of data first.
13
FN6885.0
September 3, 2010
ISL25700
SCL
SDA
START
DATA
STABLE
DATA
DATA
CHANGE STABLE
STOP
FIGURE 13. VALID DATA CHANGES, START, AND STOP CONDITIONS
SCL FROM
MASTER
1
8
9
SDA OUTPUT FROM
TRANSMITTER
HIGH IMPEDANCE
HIGH IMPEDANCE
SDA OUTPUT
FROM RECEIVER
START
ACK
FIGURE 14. ACKNOWLEDGE RESPONSE FROM RECEIVER
WRITE
SIGNALS
FROM THE
MASTER
SIGNAL AT
SDA
S
T
A IDENTIFICATION
R
BYTE
T
ADDRESS
BYTE
01 01 0 000
SIGNALS
FROM THE
ISL25700
S
T
O
P
DATA
BYTE
00 0 0
A
C
K
A
C
K
A
C
K
FIGURE 15. BYTE WRITE SEQUENCE
SIGNALS
FROM THE
MASTER
S
T
A IDENTIFICATION
R
BYTE WITH
T
R/W = 0
SIGNAL AT
SDA
0 1 0 1 0 0 0 0
ADDRESS
BYTE
READ
A
C
K
S
T
O
P
A
C
K
0 1 0 1 0 0 0 1
0 0 0 0
A
C
K
SIGNALS
FROM THE
SLAVE
S
T
A IDENTIFICATIO
R N BYTE WITH
T
R/W = 1
A
C
K
A
C
K
FIRST READ
DATA BYTE
LAST READ
DATA BYTE
FIGURE 16. READ SEQUENCE
14
FN6885.0
September 3, 2010
ISL25700
Write Operation
A Write operation requires a START condition, followed by
a valid Identification Byte, a valid Address Byte, a Data
Byte, and a STOP condition. After each of the three
bytes, the ISL25700 responds with an ACK. At this time,
if the Data Byte is to be written only to volatile registers,
then the device enters its standby state. If the Data Byte
is to be written also to non-volatile memory, the
ISL25700 begins its internal write cycle to non-volatile
memory. During the internal non-volatile write cycle, the
device ignores transitions at the SDA and SCL pins, and
the SDA output is at a high impedance state. When the
internal non-volatile write cycle is completed, the
ISL25700 enters its standby state (see Figure 14).
The byte at address 08h determines if the Data Byte is to
be written to volatile and/or non-volatile memory (see
“Memory Map” on page 10). A 20ms delay is required
between two consecutive writes to the non-volatile
registers.
Polling Method
It is possible to check if the non-volatile memory write
cycle is finished or is in progress by polling (reading) the
BUSY bit in Control/Status Register, Reg.08h[0] (see
“Control/Status Register (Reg.08h [7:0])” on page 13).
The non-volatile write cycle is in progress when the BUSY
bit is 1. No other write attempt is allowed when the BUSY
bit is 1. The non-volatile write cycle is finished when the
BUSY bit is 0.
Read Operation
A Read operation consists of a three byte instruction
followed by one or more Data Bytes (see Figure 16). The
master initiates the operation issuing the following
sequence: a START, the Identification byte with the R/W
bit set to “0”, an Address Byte, a second START, and a
second Identification byte with the R/W bit set to “1”.
After each of the three bytes, the ISL25700 responds
with an ACK. Then the ISL25700 then transmits the Data
Byte. The master then terminates the read operation
(issuing a STOP condition) following the last bit of the
Data Byte (see Figure 16).
The byte at address 08h determines if the Data Bytes
being read are from volatile or non-volatile memory (see
“Memory Map” on page 10).
Application Information
In order to get the correct temperature setting, it is very
important to chose an appropriate thermistor and
calibrate the complete system. The following sequence
describes the thermistor selection and calibration
procedure.
1. Select a thermistor type and get the RT curve from
manufacturer.
2. Find out a thermistor resistance at the desired
temperature and select the coarse temperature
range from Table 2. The thermistor value at set
15
point should be in the middle of the coarse range.
Note, the coarse ranges overlap.
3. Set the Current Sense limit in Reg.01h[7:3] and
System Loop Gain in Reg. 03h[4:0] as high as
possible to enable fast settling yet prevent thermal
oscillation.
4. Perform system calibration and fine tuning using an
external temperature sensor.
Thermistor Selection
Chose the thermistor whose resistance at the desired
temperature set point TSET will be within the range
specified in Table 2. The R/T characteristics of the
thermistor are usually provided by the manufacturer as a
table or as a curve.
For example, you are going to stabilize the temperature
at TSET = +91.5°C. You decided to use a 100k NTC
thermistor from Vishay, NTCS0805E3104FXT. The
resistance at +91.5°C will be 8109.12Ω, according to the
manufacturer data provided online at
http://www.vishay.com/doc?29100. This resistance fits
in the coarse temperature range settings of 001b or
002b, as per Table 2.
Current Sense Resistor and MOSFET Selection
The current sense resistor should be selected with
consideration of system maximum power consumption,
maximum current, and minimum resolution. It is
recommended to select a current sense resistor in the
range from 0.1Ω to 10Ω. The 0.1Ω resistor allows
sensing and will limit the maximum current from 2A to
17.5A, while a 10Ω resistor allows selecting a current
limit from 20mA to 175mA. The type and size of current
sense resistor should have an appropriate power rating.
The ISL25700 will work only with the P-type of power
MOSFETs or Darlington pair. Since the driving capability is
limited, it is not recommended to drive a bipolar
transistor. The power MOSFET can be used as a heater
inside a micro temperature chamber.
System Loop Gain Setting
Assemble the application circuit including ISL25700, the
power MOSFET, heating element and thermistor. The
System Loop Gain allows controlling thermal stability of
the feedback system. In other words, current through
the power MOSFET should settle fast and without
oscillation when setpoint changes from one temperature
to another. Settling time of the current can be monitored
by oscilloscope with the current probe.
Another way to determine system stability is to obtain a
phase margin of the system by analyzing Bode plots.
Bode plots of the gain and phase margins can be
obtained by disconnecting the thermistor from RTH breaking the loop, and connecting a low frequency signal
analyzer between the RTH pin and the thermistor. That
will allow analysis of the system transfer function vs.
frequency. Note the thermistor has to be biased with
30μA DC current from an external supply. The signal
analyzer sweeps the frequency at input node (RTH) and
FN6885.0
September 3, 2010
ISL25700
measures the phase change of the output node
(thermistor). As a rule of thumb, phase margin should be
at least 45° when the system gain reaches 0dB.
It is not recommended to change the system loop gain
when it is determined.
Calibration Procedure
Power-up the circuit and program Reg.01h[2:0] = 001b
of ISL25700. Use an externally calibrated temperature
sensor to measure the temperature of the thermistor.
When the thermistor temperature is stabilized, it can be
adjusted to the desired point by changing the Fine
Temperature Control settings in Reg.02h[7:0] until the
external thermometer indicates +91.5°C (for this
example).
The decimal FTC code can be calculated by solving for
Equations 1 and 2 as follows:
K1 × R INT ( T ) – K2 × R TH ( T )
× 255
Code = ----------------------------------------------------------------------------K3 × R TH ( T )
(EQ. 3)
Note, the final application system temperature depends
on the allowed power consumption and the level of
insulation from the ambient temperature.
Two different calibration point settings can be stored in
General Purpose non-volatile registers. More calibrated
temperature points can be stored and used as a look-up
table in an external memory.
16
Placement and Layout Consideration
It is recommended to place the ISL25700 and thermistor
as close as possible to each other, inside the insulated
area to achieve higher accuracy and keep the ground
trace between the thermistor and the device as short as
possible. The device ground pin and the system ground
should be connected at a single point, known as the
“single point ground”, preventing picking up the common
ground noise into the RTH feedback pin.
The ISL25700 also can be placed outside of the insulated
area and far away from the thermistor, but the setpoint
accuracy will decrease, due to the wide ambient
temperature range. It is recommended to use a look-up
table based on Equation 2 to compensate for the setpoint
shift.
Put a 1μF capacitor in parallel with 0.1μF decoupling
capacitor close to the VDD pin.
It is recommended to have a pull-up resistor of 500k or
higher, or a high-pass RC filter, as shown in the “Block
Diagram/Application Circuit” on page 2, to the gate of a
P-MOSFET in order to prevent a high current spike
through the MOSFET at power-up. The time constant of
the high-pass filter should be in the range of 1μs to 20μs.
FN6885.0
September 3, 2010
ISL25700
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to
web to make sure you have the latest Rev.
DATE
REVISION
9/3/10
FN6885.0
CHANGE
Initial release.
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17
FN6885.0
September 3, 2010
ISL25700
Package Outline Drawing
L10.2.1x1.6A
10 LEAD ULTRA THIN QUAD FLAT NO-LEAD PLASTIC PACKAGE
Rev 5, 3/10
8.
PIN 1
INDEX AREA
2.10
A
B
PIN #1 ID
1
0.05 MIN.
1
8.
4
4X 0.20 MIN.
1.60
0.10 MIN.
10
5
0.80
10X 0.40
0.10
6
9
2X
6X 0.50
10 X 0.20 4
TOP VIEW
0.10 M C A B
M C
BOTTOM VIEW
(10 X 0.20)
SEE DETAIL "X"
(0.05 MIN)
PACKAGE
OUTLINE
1
MAX. 0.55
0.10 C
(10X 0.60)
C
(0.10 MIN.)
(2.00)
SEATING PLANE
0.08 C
SIDE VIEW
(0.80)
(1.30)
C
0 . 125 REF
(6X 0.50 )
(2.50)
0-0.05
TYPICAL RECOMMENDED LAND PATTERN
DETAIL "X"
NOTES:
18
1.
Dimensioning and tolerancing conform to ASME Y14.5M-1994.
2.
All Dimensions are in millimeters. Angles are in degrees.
Dimensions in ( ) for Reference Only.
3.
Unless otherwise specified, tolerance : Decimal ± 0.05
4.
Lead width dimension applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
5.
Maximum package warpage is 0.05mm.
6.
Maximum allowable burrs is 0.076mm in all directions.
7.
Same as JEDEC MO-255UABD except:
No lead-pull-back, MIN. Package thickness = 0.45 not 0.50mm
Lead Length dim. = 0.45mm max. not 0.42mm.
8.
The configuration of the pin #1 identifier is optional, but must be located within
the zone indicated. The pin #1 identifier may be either a mold or mark feature.
FN6885.0
September 3, 2010