REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED 16-04-05 C. SAFFLE Add paragraph 4.4.4.1.1 Accelerated annealing test and make change to paragraph A.4.3.1.- ro A REV A A A A A A A A A A SHEET 35 36 37 38 39 40 41 42 42 44 REV A A A A A A A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.landandmaritime.dla.mil CHECKED BY RAJESH PITHADIA APPROVED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHARLES F. SAFFLE DRAWING APPROVAL DATE MICROCIRCUIT, LINEAR, 3.3 V CAN TRANSCEIVER MONOLITHIC SILICON 16-03-01 REVISION LEVEL A SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 5962-15228 1 OF 44 5962-E295-16 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 L 15228 Federal stock class designator \ RHA designator (see 1.2.1) 01 V X A Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ISL72026SEH Radiation hardened, 3.3 V can transceiver, 1 Mbps, listen mode, loopback 02 ISL72027SEH Radiation hardened, 3.3 V can transceiver, 1Mbps, listen mode, split termination output 03 ISL72028SEH Radiation hardened, 3.3 V can transceiver, 1Mbps, low power shutdown, split termination output 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter X Descriptive designator See figure 1 Terminals 8 Package style Flat pack with grounded lid 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 2 1.3 Absolute maximum ratings. 1/ VCC to GND with / without ion beam ........................................................................................ -0.3 V to 4.5 V CANH, CANL, VREF under ion beam ...................................................................................... 16 V CANH, CANL, VREF ................................................................................................................ 20 V I/O voltages D, R, RS ............................................................................................................................... -0.5 V to 7 V Receiver output current ............................................................................................................ -50 mA to 50 mA Output short circuit duration ...................................................................................................... Continuous Storage temperature range ...................................................................................................... -65C to +150C Junction temperature (TJ) ......................................................................................................... +175C Lead temperature (soldering, 10 seconds) ............................................................................... +300C Thermal resistance, junction-to-ambient (JA) direct attach ..................................................... 39C/W 2/ Thermal resistance, junction-to-case (JC) direct attach .......................................................... 7C/W 3/ 1.4 Recommended operating conditions. VCC supply voltage ................................................................................................................... 3.0 V to 3.6 V Voltage on CAN I/O ..................................................................................................................-7 V to 12 V VIH D logic pin (D, LBK) ........................................................................................................... 2 V to 5.5 V VIL D logic pin (D, LBK) ............................................................................................................ 0 V to 0.8 V IOH driver (VOD = 1.5 V, VCC = 3.3 V) ..................................................................................... -40 mA IOH receiver (VOH = 2.4 V) .......................................................................................................-8 mA IOL driver (VOD = 1.5 V, VCC = 3.3 V) ......................................................................................+40 mA IOL receiver ..............................................................................................................................+8 mA Ambient operating temperature range (TA) .............................................................................. -55C to +125C 1.5 Radiation features. Maximum total dose available: low dose rate tests - dose rate 10 mrad(Si)/s: ...................... 50 krad(Si) 4/ Single event phenomena (SEP) : 2 No SEL occurs at effective linear energy threshold (LET): ................................................... 60 MeV·cm /mg 5/ 2 No SEB occurs at effective linear energy threshold (LET): ................................................... 60 MeV·cm /mg 5/ No SET occurs at effective linear energy threshold (LET): 2 ................................................ 2.7 MeV·cm /mg ______ 1/ 2/ 3/ 4/ 5/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. JA is measured with the component mounted on a high effective thermal conductivity test board (two buried 1 ounce copper planes) with “direct attach” features package base mounted to printed circuit board (PCB) thermal land with a 10mil gap fill material having a k of 1W/m-K. See manufacturer Tech Brief TB379. For JC, the case temperature location is the center of the package underside. Device types 01, 02, 03 have been tested at low dose rate only. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition D to a maximum total ionizing dose (TID) level of 75 krads(Si). Device types 01, 02, 03 are wafer acceptance tested to 75 krads(Si) total ionizing dose per MIL-STD-883, method 1019, condition D, per customer request, and are marked at the standard 50 krads(Si) level. Device types 01, 02, 03 use silicon on insulator (SOI) technology. No single-event burnout (SEB) or single-event latchup (SEL) was observed when irradiated with Pr ions at normal incidence, corresponding to a surface LET of 2 60 MeV·cm /mg. The normal particle range into silicon for Pr ions after 30 mm of air is about 110 m and the Bragg peak range is 37 m, resulting in ion penetration well beyond the sensitive volume of the devices. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 3 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http://www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 4 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Test circuits and waveforms. The test circuit and waveforms shall be as specified on figures 3 through 24. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 5 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C VCC = 3.0 V to 3.6 V unless otherwise specified Group A subgroups Device type Limits Unit Min Max 2.25 VCC Driver electrical characteristics Dominant bus output voltage Recessive bus output voltage Dominant output differential voltage Recessive output differential voltage VO(DOM) VO(REC) VOD(DOM) VOD(REC) 1,2,3 see figures 3, 4 1 2/ 2.25 VCC D = 0 V, CANL, RS = GND, 1,2,3 0.1 1.25 see figures 3, 4 1 2/ 0.1 1.25 1.8 2.7 M, D, P, L M, D, P, L 1,2,3 see figures 3, 4 M, D, P, L 1 2/ 1.8 2.7 D = 3 V, CANL, RS = GND, 60 and no load, see figures 3, 4 M, D, P, L 1,2,3 1.8 2.8 1 2/ 1.8 2.8 D = 0 V, RS = GND, 1,2,3 1.5 3.0 see figures 3, 4 1 2/ 1.5 3.0 D = 0 V, RS = GND, 1,2,3 1.2 3.0 see figures 4, 5 1 2/ 1.2 3.0 -120 12 M, D, P, L M, D, P, L VIL see figures 3, 4 1 2/ -120 12 1,2,3 -500 50 1 2/ -500 50 2.0 5.5 2.0 5.5 0 0.8 0 0.8 2.0 5.5 2.0 5.5 0 0.8 0 0.8 M, D, P, L 1,2,3 3/ 4/ VIH 1,2,3 3/ 4/ VIL 01 1 2/ 4/ 1,2,3 3/ M, D, P, L Logic input low voltage (D) 01 1 2/ 4/ M, D, P, L Logic input high voltage (D) 01, 02, 03 1,2,3 M, D, P, L Logic input low voltage (LBK) 01, 02, 03 D = 3 V, RS = GND, M, D, P, L VIH 01, 02, 03 D = 3 V, CANH, RS = GND, 60 and no load, D = 3 V, RS = GND, no load Logic input high voltage (LBK) 01, 02, 03 D = 0 V, CANH, RS = GND, 01, 02, 03 1 2/ 1,2,3 3/ M, D, P, L 01, 02, 03 1 2/ V V V mV V V V V See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 6 TABLE IA. Electrical performance characteristics - Continued. Test Conditions 1/ -55C TA +125C Symbol Group A subgroups Device type VCC = 3.0 V to 3.6 V unless otherwise specified Limits Unit Min Max -30 30 -30 30 -30 30 -30 30 -30 30 -30 30 -30 30 -30 30 Driver electrical characteristics – continued. Logic high level input current (LBK) IIH 1,2,3 LBK = 2.0 V 4/ M, D, P, L Logic high level input current (D) IIH D = 2.0 V Logic low level input current (LBK) IIL IIL D = 0.8 V RS input voltage for listen mode M, D, P, L Output short circuit current IOSC VCANH = -7 V, CANL = open, see figures 6, 7 M, D, P, L VCANH = +12 V, CANL = open, see figures 6, 7 M, D, P, L VCANL = -7 V, CANH = open, see figures 6, 7 M, D, P, L VCANL = +12 V, CANH = open, see figures 6, 7 M, D, P, L 01, 02, 03 1 2/ 1,2,3 VIN(RS) 01 1 4/ 1,2,3 M, D, P, L 01, 02, 03 1 2/ 1,2,3 LBK = 0.8 V 4/ M, D, P, L Logic low level input current (D) 1 2/ 4/ 1,2,3 M, D, P, L 01 01, 02, 0.75 VCC 03 0.75 1 2/ 1,2,3 VCC 01, 02, 03 1 2/ 5.5 A A A A V 5.5 -250 mA -250 1,2,3 1 1 2/ 1 1,2,3 -1 1 2/ -1 1,2,3 250 1 2/ 250 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 7 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C VCC = 3.0 V to 3.6 V unless otherwise specified Group A subgroups Device type Limits Min Unit Max Receiver electrical characteristics Input threshold voltage (rising) (LBK) VTHR LBK = 0 V, 4/ RS = GND, 10 k, 50 k, (recessive to dominant), see figures 8, 9, 10, and 11 1,2,3 M, D, P, L Input threshold voltage (rising) VTHR VTHF RS = GND, 10 k, 50 k, (recessive to dominant), see figures 8, 9, 10, and 11 1,2,3 LBK = 0 V, 4/ RS = GND, 10 k, 50 k, (dominant to recessive), see figures 8, 9, 10, and 11 1,2,3 VTHF 1,2,3 M, D, P, L Input hysteresis Listen mode input threshold voltage (rising) VHYS VTHRLM VTHFLM (VTHR - VTHF), RS = GND, 10 k, 50 k, see figures 8, 9, 1,2,3 10, and 11 1 2/ M, D, P, L RS = VCC, (recessive to dominant), see figures 8, 9, and 10 1,2,3 VHYSLM RS = VCC, (dominant to recessive), see figures 8, 9, and 10 1,2,3 (VTHR - VTHF), RS =VCC, see figures 8, 9, and 10 1,2,3 VOH 1,2,3 M, D, P, L Receiver output low voltage VOL 01 500 01, 02, 03 500 1,2,3 M, D, P, L mV 40 mV 40 01, 02 1150 mV 1150 01, 02 525 mV 525 01, 02 50 mV 50 01, 02, 03 1 2/ IO = +4 mA mV 500 1 2/ IO = -4 mA mV 500 1 2/ M, D, P, L Receiver output high voltage 01 1 2/ M, D, P, L Listen mode input hysteresis 900 900 1 2/ M, D, P, L Listen mode input threshold voltage (falling) 01, 02, 03 1 2/ 4/ RS = GND, 10 k, 50 k, (dominant to recessive), see figures 8, 9, 10, and 11 mV 900 1 2/ M, D, P, L Input threshold voltage (falling) 900 1 2/ 4/ M, D, P, L Input threshold voltage (falling) (LBK) 01 2.4 V 2.4 01, 02, 03 1 2/ 0.4 V 0.4 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 8 TABLE IA. Electrical performance characteristics - Continued. Test Conditions 1/ -55C TA +125C Symbol Group A subgroups Device type VCC = 3.0 V to 3.6 V unless otherwise specified Limits Min Unit Max Receiver electrical characteristics – continued. Input current for CAN bus (LBK) ICAN CANH or CANL at 12 V, D = 3 V, other bus pin at 0 V, LBK = RS = GND 4/ M, D, P, L CANH or CANL at 12 V, 4/ D = 3 V, VCC = 0 V, other bus pin at 0 V, LBK = RS = GND M, D, P, L CANH or CANL at -7 V, D = 3 V, other bus pin at 0 V, LBK = RS = GND 4/ M, D, P, L CANH or CANL at -7 V, 4/ D = 3 V, VCC = 0 V, other bus pin at 0 V, LBK = RS = GND M, D, P, L Input current for CAN bus ICAN 500 1,2,3 250 1 2/ 4/ 250 1,2,3 -400 1 2/ 4/ -400 1,2,3 -150 1 2/ 4/ -150 01, 02, 03 1 2/ 500 1,2,3 250 1 2/ 250 M, D, P, L Input to GND, D = 3 V, LBK = RS = GND Input to GND, D = 3 V, RS = GND -400 1 2/ -400 1,2,3 -150 1 2/ -150 01 4 2/ 4/ 4,5,6 M, D, P, L 500 1,2,3 4,5,6 M, D, P, L RIN 1 2/ 4/ RS = GND CANH or CANL at -7 V, D = 3 V, VCC = 0 V, other bus pin at 0 V, RS = GND M, D, P, L Input resistance (CANH or CANL) 500 1,2,3 CANH or CANL at -7 V, D = 3 V, other bus pin at 0 V, RS = GND M, D, P, L RIN 01 CANH or CANL at 12 V, D = 3 V, other bus pin at 0 V, CANH or CANL at 12 V, D = 3 V, VCC = 0 V, other bus pin at 0 V, RS = GND M, D, P, L Input resistance (CANH or CANL) (LBK) 1,2,3 01, 02, 03 4 2/ 20 50 20 50 20 50 20 50 A A k k See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 9 TABLE IA. Electrical performance characteristics - Continued. Test Conditions 1/ -55C TA +125C Symbol Group A subgroups Device type VCC = 3.0 V to 3.6 V unless otherwise specified Limits Unit Min Max 40 100 40 100 40 100 40 100 Receiver electrical characteristics – continued. Differential input resistance (LBK) RIND Input to GND, D = 3 V, LBK = RS = GND 4,5,6 M, D, P, L Differential input resistance RIND Input to GND, D = 3 V, RS = GND 4 2/ 4/ 4,5,6 M, D, P, L 01 01,02, 03 4 2/ k k Supply current Supply current, listen mode ICC(L) RS = D = VCC, LBK = 0 V 4/ (LBK) M, D, P, L Supply current, listen mode ICC(L) Supply current, dominant ICC(LPS) ICC(DOM) (LBK) M, D, P, L 1 4/ D = LBK = RS = GND, no load 1,2,3 4/ Supply current, dominant ICC(DOM) M, D, P, L D = RS = GND, no load M, D, P, L Supply current, recessive ICC(REC) (LBK) D = VCC, LBK = RS = GND, no load 4/ Supply current, recessive ICC(REC) M, D, P, L D = VCC, RS = GND, no load M, D, P, L 01, 02 03 01 mA 50 A 7 mA 7 01, 02, 03 7 mA 7 01 1 2/ 4/ 1,2,3 2 50 1 2/ 1,2,3 mA 2 1 2/ 4/ 1,2,3 2 2 1 2/ 1,2,3 RS = D = VCC 4/ 01 1 2/ 4/ 1,2,3 RS = D = VCC M, D, P, L Supply current, low power shutdown mode 1,2,3 5 mA 5 01, 02, 03 1 2/ 5 mA 5 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 10 TABLE IA. Electrical performance characteristics - Continued. Test Conditions 1/ -55C TA +125C Symbol Group A subgroups Device type VCC = 3.0 V to 3.6 V unless otherwise specified Cold sparing bus current CANH leakage current IL(CANH) 1,2,3 VCC =0.2 V, RS = GND, CANH = -7 V or 12 V, 01, 02, 03 Limits Unit Min Max -25 25 -25 25 -25 25 -25 25 -25 25 -25 25 A CANL = float, D = VCC M, D, P, L CANL leakage current IL(CANL) 1 2/ 1,2,3 VCC =0.2 V, RS = GND, CANL = -7 V or 12 V, 01, 02, 03 A CANH = float, D = VCC M, D, P, L VREF leakage current IL(VREF) 1 2/ 1,2,3 VCC =0.2 V, 02, 03 A VREF= -7 V or 12 V, D = VCC M, D, P, L Driver switching characteristics Propagation delay low to tPDLH1 high RS = GND, see figures 12, 13 M, D, P, L tPDLH2 RS = 10 k, see figures 12, 13 M, D, P, L tPDLH3 RS = 50 k, see figures 12, 13 M, D, P, L Propagation delay high to low tPDHL1 RS = GND, see figures 12, 13 M, D, P, L tPDHL2 RS = 10 k, see figures 12, 13 M, D, P, L tPDHL3 RS = 50 k, see figures 12, 13 M, D, P, L 1 2/ 9,10,11 01, 02, 03 9 2/ 9,10,11 01, 02, 03 01, 02, 03 01, 02, 03 155 ns 155 01, 02, 03 9 2/ 9,10,11 1400 1400 9 2/ 9,10,11 850 850 9 2/ 9,10,11 ns 150 9 2/ 9,10,11 150 800 800 01, 02, 03 9 2/ 1300 1300 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 11 TABLE IA. Electrical performance characteristics - Continued. Test Conditions 1/ -55C TA +125C Symbol Group A subgroups Device type VCC = 3.0 V to 3.6 V unless otherwise specified Limits Min Unit Max Driver switching characteristics – continued. Output skew tSKEW1 RS = GND, see figures 12, 13, (|tPHL - tPLH|) M, D, P, L tSKEW2 RS = 10 k, see figures 12, 13, (|tPHL - tPLH|) tSKEW3 Output rise time tr1 M, D, P, L RS = GND, see figures 12, 13, (driver fastest speed) M, D, P, L tr2 RS = 10 k, see figures 12, 13, (medium speed) tr3 RS = 50 k , see figures 12, 13, tf1 RS = GND, see figures 12, 13, (driver fastest speed) (slowest speed) Output fall time M, D, P, L (medium speed) tf3 RS = 50 k, see figures 12, 13, (slowest speed) 800 800 01, 02, 03 01, 02, 03 01, 02, 03 01, 02, 03 9 2/ 01, 02, 03 9 2/ 9,10,11 M, D, P, L 01, 02, 03 9 2/ 9,10,11 M, D, P, L 510 510 9 2/ 9,10,11 RS = 10 k, see figures 12, 13, 01, 02, 03 9 2/ 9,10,11 M, D, P, L tr2 9,10,11 ns 50 9 2/ 9,10,11 M, D, P, L 50 9 2/ 9,10,11 M, D, P, L 01, 02, 03 9 2/ 9,10,11 RS = 50 k, see figures 12, 13, (|tPHL - tPLH|) 9,10,11 01, 02, 03 9 2/ 20 100 20 100 200 780 200 780 400 1400 400 1400 10 75 10 75 175 500 175 500 300 1000 300 1000 ns ns See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 12 TABLE IA. Electrical performance characteristics - Continued. Test Conditions 1/ -55C TA +125C Symbol Group A subgroups Device type VCC = 3.0V to 3.6V unless otherwise specified Driver switching characteristics – continued. t(LOOP1) RS = GND, see figures 14, 15 Total loop delay, driver input to receiver output, RS = GND, see figures 16, 17 recessive to dominant M, D, P, L RS = 10 k, see figures 14, 15 Min 9,10,11 RS = 50 k, see figures 14, 15 Total loop delay, driver input to receiver output, dominant to recessive t(LOOP2) RS = GND, see figures 14, 15 02, 03 210 9 2/ 01, 02, 03 210 9,10,11 01 875 02, 03 875 9 2/ 01, 02, 03 875 9,10,11 01 1400 02, 03 1400 9 2/ 01, 02, 03 1400 9,10,11 01 270 02, 03 270 9 2/ 01, 02, 03 270 9,10,11 01 825 02, 03 825 9 2/ 01, 02, 03 825 9,10,11 01 1300 02, 03 1300 01, 02, 03 1300 RS = GND, see figures 16, 17 M, D, P, L RS = 10 k, see figures 14, 15 RS = 10 k, see figures 16, 17 M, D, P, L RS = 50 k, see figures 14, 15 RS = 50 k, see figures 16, 17 M, D, P, L Max 210 RS = 50 k, see figures 16, 17 M, D, P, L Unit 01 RS = 10 k, see figures 16, 17 M, D, P, L Limits 9 2/ ns ns See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 13 TABLE IA. Electrical performance characteristics - Continued. Test Conditions 1/ -55C TA +125C Symbol Group A subgroups Device type VCC = 3.0 V to 3.6 V unless otherwise specified Limits Min Unit Max Driver switching characteristics – continued. Listen to valid dominant time tL-DOM See figures 18, 20 9,10,11 See figures 18, 20 tLPS-DOM 15 s 02 M, D, P, L Low power shutdown valid dominant time 01 See figures 21, 22 4/ M, D, P, L 9 2/ 01, 02 15 9,10,11 03 15 9 2/ 4/ s 15 Receiver switching characteristics Propagation delay low to high tPLH See figures 8, 9, 10 1,2,3 M, D, P, L Propagation delay high to low tPHL See figures 8, 9, 10 Rx skew tSKEW1 See figures 8, 9, 10, |(tPHL - tPLH)| LBK delay I/O to Rx output tLBK See figures 23, 24 4/ M, D, P, L 01, 02, 03 110 ns 110 01, 02, 03 35 ns 35 1 2/ 1,2,3 ns 110 1 2/ 1,2,3 M, D, P, L 110 1 2/ 1,2,3 M, D, P, L 01, 02, 03 01 75 1 2/ 4/ ns 75 VREF / RS pin characteristics VREF pin voltage VREF 5 A IREF 5 A 1,2,3 M, D, P, L 50 A IREF 50 A IRSH IRSL 1 2/ 1,2,3 RS = 0.75 X VCC M, D, P, L RS input current, low 1 2/ 1,2,3 M, D, P, L RS input current, high 02, 03 RS = GND 01,02, 03 1 1,2,3 0.45 x 0.55 x VCC VCC 0.45 x 0.55 x VCC VCC 0.4x 0.6x VCC VCC 0.4x 0.6x VCC VCC V A -10 -10 01,02, 03 -450 0 A See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 14 TABLE IA. Electrical performance characteristics - Continued. 1/ Unless otherwise specified, VCC = 3.0 V to 3.6 V. 2/ RHA device types 01, 02, and 03 supplied to this drawing will meet all levels M, D, P, and L of irradiation for condition D. However, device types 01, 02, and 03 are only are tested in accordance with MIL-STD-883, method 1019, condition D (see 1.5 herein) at a total dose of 75 krads(Si). Device types 01, 02, and 03 are wafer acceptance tested 75 krads(Si) total ionizing dose per MIL-STD-883, method 1019, condition D, per customer request, and are marked at the standard 50 krads(Si) level. Pre and Post irradiation values and parameters are as specified in Table IA. When performing post irradiation electrical measurements for any RHA level, TA = +25C. 3/ Parameter included in functional testing. 4/ Performed during the 100% screening operations in production over the full operating temperature range. Not performed as part of TCI Group C and Group E. Radiation characterization testing performed as part of initial release and after any major changes in design. TABLE IB. SEP test limits. 1/ 2/ 3/ Device types SEP Temperature (TC) Bus voltage (VCANH, VCANL) Supply voltage (VCC) Effective linear energy transfer (LET) 2 01, 02, 03 No SEL 125°C ±18 V 4.5 V 60 MeV·cm /mg 01, 02, 03 No SEB 125°C ±18 V 4.5 V 60 MeV·cm /mg 01, 02, 03 No SET 25°C Floating 3.0 V 2.7 MeV·cm /mg 2 2 1/ For SEP test conditions, see 4.4.4.2 herein. 2/ Technology characterization and model verification supplemented by in-line data may be used in lieu of end of line testing. Test plan must be approved by the technical review board and qualifying activity. 3/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but are not production tested unless specified by the customer through the purchase order or contract. See manufacturer’s SEE test report for more information. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 15 Case outline X FIGURE 1. Case outline. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 16 Case outline X – continued. Dimensions Inches Symbol Millimeters Min Max Min Max A .087 .110 2.21 2.79 A1 .026 .036 0.66 0.92 b .015 .022 0.38 0.56 c .004 .009 0.10 0.23 D .245 .265 6.22 6.73 E .245 .265 6.22 6.75 E1 .170 .180 4.32 4.57 E2 0.03 e 0.76 .050 BSC L .325 1.27 BSC .370 8.26 9.40 NOTES: 1. Controlling dimensions are inch, millimeter dimensions are given for reference only. 2. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as pin one identification mark. Alternately, a tab may be used to identify pin one. 3. If a pin one identification mark is used in addition to a tab, the limits of the tab dimension do not apply. 4. The maximum limits of lead dimensions (section A-A) shall be measured at the centroid of the finished lead surfaces, When solder dip or tin plate lead finish is applied. 5. Measure dimension at all four corners. 6. For bottom brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the packages to cover the leads. 7. Dimension shall be measured at the point of exit (beyond the meniscus) of the lead from the body. Dimension minimum shall be reduced by 0.0015 inch (.038 mm) maximum when solder dip lead finish is applied. FIGURE 1. Case outline – continued.. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 17 Device types 01 Case outline X Terminal number Terminal symbol D 02 03 X X Terminal symbol 1 D D D 2 GND GND GND 3 VCC VCC VCC 4 R R R 5 LBK VREF VREF 6 CANL CANL CANL 7 CANH CANH CANH 8 RS RS RS Package lid Tied internally to terminal 2 (GND) Tied internally to terminal 2 (GND) Tied internally to terminal 2 (GND) Description GND CAN driver digital input. The bus states are LOW = dominant and HIGH = recessive. Ground pin of the device. VCC Supply pin of the device. The typical voltage for the device is 3.3 V. R CANL CAN data receiver output for the device. The bus states are LOW = dominant and HIGH = recessive. A resistor to GND from this pin controls the rise and fall time of the CAN output waveform. Drive RS HIGH to put into listen mode. CAN bus line for low level output CANH CAN bus line for high level output RS LBK VREF Package lid A high on this pin places CANH & CANL pins in a high impedance state. The rest of the circuit remains active so that the TX and Rx can loopback diagnostic information. Internal tied low. VCC/2 reference output for split mode termination. Tied internally to terminal 2 (GND) FIGURE 2. Terminal connections. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 18 FIGURE 3. Driver test circuit. FIGURE 4. Driver bus voltage definitions. FIGURE 5. Driver common mode circuit. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 19 FIGURE 6. Output short circuit current circuit. FIGURE 7. Output short circuit current waveforms. FIGURE 8. Receiver voltage definitions. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 20 FIGURE 9. Receiver test circuit. FIGURE 10. Receiver test measurement points. Input VCANH -6.1 V 12 V -1 V 12 V -6.5 V 12 V -7 V 6V Open VCANL -7 V 11.1 V -7 V 6V -7 V 11.5 V -1 V 12 V Open Output R L L L L H H H H H Measured VDIFF 900 mV 900 mV 6V 6V 500 mV 500 mV 6V 6V X FIGURE 11. Differential input voltage threshold test. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 21 VIN = 125 kHz, 0 V to VCC, duty cycle 50%, tr = tf 6 ns, Zo = 50 . CL includes fixture and instrumentation capacitance. FIGURE 12. Driver timing test circuit. FIGURE 13. Driver timing measurement points . VIN = 125 kHz, duty cycle 50%, tr = tf 6 ns. FIGURE 14. Total loop delay test circuit. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 22 FIGURE 15. Total loop delay test measurement points. VIN = 125 kHz, duty cycle 50%, tr = tf 6 ns. FIGURE 16. Total loop delay test circuit. FIGURE 17. Total loop delay test measurement points. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 23 VIN = 125 kHz, duty cycle 50%, tr = tf 6 ns. FIGURE 18. Listen to valid dominant time circuit. VIN = 125 kHz, 0 V to VS, duty cycle 50%, tr = tf 6 ns. FIGURE 19. Listen to valid dominate time circuit. FIGURE 20. Listen to valid dominate time measurement points. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 24 VIN = 125 kHz, 0 V to VS, duty cycle 50%, tr = tf 6 ns. FIGURE 21. Low power shutdown to dominate time circuit. FIGURE 22. Low power shutdown to time measurement points. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 25 VIN = 125 kHz, 0 V to VS, duty cycle 50%, tr = tf 6 ns. FIGURE 23. Loop back delay to dominant time test circuit. FIGURE 24. Loop back delay to dominant measurement points. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 26 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein. 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. Subgroups 7 and 8 in table I, method 5005 of MIL-STD-883 shall be omitted. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 27 TABLE IIA. Electrical test requirements. Test requirements Subgroups (in accordance with MIL-PRF-38535, table III) Device Device class Q class V 1, 9 1, 9 Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) 1, 2, 3, 4, 1/ 5, 6, 9, 10, 11 Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) 1, 2, 3, 4, 5, 6, 9, 10, 11 1, 2, 3, 4, 5, 6, 9, 10, 11 1, 9 1, 4, 9 1, 2, 3, 1/ 2/ 4, 5, 6, 9, 10, 11 1, 2, 3, 4, 5, 6, 9, 10, 11 1, 2, 3, 4, 2/ 1, 9 1, 4, 9 1/ For device class Q, PDA applies to subgroup 1. For device class V, PDA applies to subgroups 1, 9, and . 2/ Delta limits (see table IIB) shall be required and the delta values shall be computed with reference to the zero hour electrical parameters (see table IA). TABLE IIB. Burn-in and operating life test delta parameters. TA = +25C. Parameters D logic input leakage D logic input leakage Symbol 01, 02, 03 3.0 A IIL D = 0.8 V 01, 02, 03 3.0 A D = LBK = RS = 0 V, no load 01, 02, 03 1.0 mA 01, 02, 03 0.75 A Supply current recessive ICC(REC) D = VCC, LBK = RS = 0 V, no load VOH IO = -4 mA 01, 02, 03 0.10 V VOL IO = +4 mA 01, 02, 03 0.10 V VO(DOM) D = 0 V, CANH = RS = 0 V 01, 02, 03 0.10 V VO(DOM) D = 0 V, CANL = RS = 0 V 01, 02, 03 0.10 V VO(REC) D = 3 V, CANH = RS = 0 V, 60 , no load 01, 02, 03 0.10 V VO(REC) D = 3 V, CANL = RS = 0 V, 60 , no load 01, 02, 03 0.10 V STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 Limit D = 2.0 V ICC(DOM) Recessive bus output voltage Device types IIH Supply current dominant Receiver output high voltage Receiver output low voltage Dominant bus output voltage Dominant bus output voltage Recessive bus output voltage Conditions VCC = 3.0 V and 3.6 V SIZE 5962-15228 A REVISION LEVEL A SHEET 28 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table IIA herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table IA at TA = +25C 5C, after exposure, to the subgroups specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019, condition D and as specified herein. 4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level greater than 5 krads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall be the pre-irradiation end-point electrical parameter limit at +25C 5C. Testing shall be performed at initial qualification and after any process or design changes which may affect the RHA response of the device. 4.4.4.2 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be performed on class V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. Test four devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP testing. The test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60). No shadowing of the ion beam due to fixturing or package related effects is allowed. 7 2 b. The fluence shall be 100 errors or 10 ions/cm . 2 5 2 c. The flux shall be between 10 and 10 ions/cm /s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be 20 micron in silicon. e. The test temperature shall be +25C and the maximum rated operating temperature 10C. f. Bias conditions shall be defined by the manufacturer for the latchup measurements. g. For SEP test limits, see Table IB herein. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 29 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108. 6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990, or telephone (614) 692-0540. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing. 6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available from the device manufacturer: a. RHA upset levels. b. Test conditions (SEP). c. Occurrence of latchup (SEL). d. Number of transients (SET). e. Occurrence of burn-out (SEB). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 30 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 A.1 SCOPE A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. A.1.2 PIN. The PIN is as shown in the following example: 5962 L Federal stock class designator \ RHA designator (see A.1.2.1) 15228 01 V 9 A Device type (see A.1.2.2) Device class designator (see A.1.2.3) Die code Die details (see A.1.2.4) / \/ Drawing number A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ISL72026SEH 3.3 V can transceiver, 1 Mbps, listen mode, loopback 02 ISL72027SEH 3.3 V can transceiver, 1 Mbps, listen mode, split termination output 03 ISL72028SEH 3.3 V can transceiver, 1 Mbps, low power shutdown, split termination output A.1.2.3 Device class designator. Device class Q or V STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 Device requirements documentation Certification and qualification to the die requirements of MIL-PRF-38535 SIZE 5962-15228 A REVISION LEVEL A SHEET 31 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. A.1.2.4.1 Die physical dimensions. Die type Figure number 01 02 03 A-1 A-2 A-3 A.1.2.4.2 Die bonding pad locations and electrical functions. Die type Figure number 01 02 03 A-1 A-2 A-3 A.1.2.4.3 Interface materials. Die type Figure number 01 02 03 A-1 A-2 A-3 A.1.2.4.4 Assembly related information. Die type Figure number 01 02 03 A-1 A-2 A-3 A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details. A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 32 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 A.2 APPLICABLE DOCUMENTS. A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-883 - Test Method Standard Microcircuits. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. A.3 REQUIREMENTS A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V. A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1. A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in A.1.2.4.2 and on figure A-1. A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1. A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1. A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.4 herein. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 33 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table IA of the body of this document. A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table IA. A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535. A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. A.4 VERIFICATION A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM plan shall not affect the form, fit, or function as described herein. A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer’s QM plan. As a minimum, it shall consist of: a. Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007. b. 100% wafer probe (see paragraph A.3.4 herein). c. 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the alternate procedures allowed in MIL-STD-883, method 5004. A.4.3 Conformance inspection. A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4, 4.4.4.1, 4.4.4.1.1, and 4.4.4.2 herein. A.5 DIE CARRIER A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 34 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 A.6 NOTES A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and logistics purposes. A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio, 43218-3990 or telephone (614)-692-0540. A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in MIL-HDBK-103 and QML-38535. The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 35 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 Device type 01 FIGURE A-1. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 36 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 Device type 01 Die layout X - Y coordinates Pad number Pad name X (µm) Y (µm) X Y 1 NC 90.0 90.0 901.4 1365.6 2 NC 90.0 90.0 767.4 1365.6 3 NC 90.0 90.0 -183.23 1365.6 4 NC 90.0 90.0 -333.25 1365.6 5 NC 90.0 90.0 -483.25 1365.6 6 NC 90.0 90.0 -633.25 1365.6 7 NC 90.0 90.0 -783.25 1365.6 8 NC 90.0 90.0 -933.25 1365.6 9 D 110.0 110.0 -931.1 901.85 10 NC 110.0 110.0 -931.1 563.25 11 GND 110.0 180.0 -931.1 342.25 12 GND_ESD 110.0 110.05 -931.1 119.42 13 VCC 110.0 180.0 -931.1 -115.05 14 NC 110.0 180.05 -931.1 -371.08 15 R 110.0 180.0 -931.1 -1350.0 16 NC 90.0 90.0 -711.1 -1394.95 17 NC 90.0 90.0 -561.1 -1394.95 18 NC 90.0 90.0 -411.1 -1394.95 19 NC 90.0 90.0 -261.1 -1394.95 20 NC 90.0 90.0 -111.1 -1394.95 21 NC 90.0 90.0 38.9 -1394.95 22 LBK 110.0 110.0 756.9 -1307.3 23 NC 110.0 180.0 775.3 -1072.3 24 CANL 110.0 180.0 772.1 2.15 25 CANH 110.0 180.05 772.1 343.33 26 RS 110.0 180.0 848.1 1140.6 NOTE: Origin of coordinates is the center of the die. NC = No connect FIGURE A-1. Die bonding pad locations and electrical functions – continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 37 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 Device type 01 Die bonding pad locations and electrical functions Die physical dimensions. Die size: 2413 microns x 3322 microns. Die thickness: 305 microns 25 microns. Interface materials. Top metallization: 300 Å TiN on 2.8 microns AlCu In bond pads, TiN has been removed. Backside metallization: Silicon Glassivation. Type: 12 kÅ silicon nitride on 3 kÅ oxide Substrate: P6SOI: Bonded wafer dielectrically isolated BiCMOS. Assembly related information. Substrate potential: Floating Special assembly instructions: Tie GND (pad 11) and GND_ESD (pad 12) both together and to GND. All pads identified as NC shall not be connected and shall remain floating. FIGURE A-1. Die bonding pad locations and electrical functions – continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 38 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 Device type 02 FIGURE A-2. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 39 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 Device type 02 Die layout X - Y coordinates Pad number Pad name X (µm) Y (µm) X Y 1 NC 90.0 90.0 901.4 1365.6 2 NC 90.0 90.0 767.4 1365.6 3 NC 90.0 90.0 -183.23 1365.6 4 NC 90.0 90.0 -333.25 1365.6 5 NC 90.0 90.0 -483.25 1365.6 6 NC 90.0 90.0 -633.25 1365.6 7 NC 90.0 90.0 -783.25 1365.6 8 NC 90.0 90.0 -933.25 1365.6 9 D 110.0 110.0 -931.1 901.85 10 NC 110.0 110.0 -931.1 563.25 11 GND 110.0 180.0 -931.1 342.25 12 GND_ESD 110.0 110.05 -931.1 119.42 13 VCC 110.0 180.0 -931.1 -115.05 14 VCC_VREF 110.0 180.05 -931.1 -371.08 15 R 110.0 180.0 -931.1 -1350.0 16 NC 90.0 90.0 -711.1 -1394.95 17 NC 90.0 90.0 -561.1 -1394.95 18 NC 90.0 90.0 -411.1 -1394.95 19 NC 90.0 90.0 -261.1 -1394.95 20 NC 90.0 90.0 -111.1 -1394.95 21 NC 90.0 90.0 38.9 -1394.95 22 NC 110.0 110.0 756.9 -1307.3 23 VREF 110.0 180.0 775.3 -1072.3 24 CANL 110.0 180.0 772.1 2.15 25 CANH 110.0 180.05 772.1 343.33 26 RS 110.0 180.0 848.1 1140.6 NOTE: Origin of coordinates is the center of the die. NC = No connect FIGURE A-2. Die bonding pad locations and electrical functions - continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 40 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 Device type 02 Die bonding pad locations and electrical functions Die physical dimensions. Die size: 2413 microns x 3322 microns. Die thickness: 305 microns 25 microns. Interface materials. Top metallization: 300 Å TiN on 2.8 microns AlCu In bond pads, TiN has been removed. Backside metallization: Silicon Glassivation. Type: 12 kÅ silicon nitride on 3 kÅ oxide Substrate: P6SOI: Bonded wafer dielectrically isolated BiCMOS. Assembly related information. Substrate potential: Floating Special assembly instructions: Tie GND (pad 11) and GND_ESD (pad 12) both together and to GND. Tie VCC (pad 13) and VCC_VREF (pad 14) both together and to VCC. All pads identified as NC shall not be connected and shall remain floating. FIGURE A-2. Die bonding pad locations and electrical functions – continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 41 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 Device type 03 FIGURE A-3. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 42 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 Device type 03 Die layout X - Y coordinates Pad number Pad name X (µm) Y (µm) X Y 1 NC 90.0 90.0 901.4 1365.6 2 NC 90.0 90.0 767.4 1365.6 3 NC 90.0 90.0 -183.23 1365.6 4 NC 90.0 90.0 -333.25 1365.6 5 NC 90.0 90.0 -483.25 1365.6 6 NC 90.0 90.0 -633.25 1365.6 7 NC 90.0 90.0 -783.25 1365.6 8 NC 90.0 90.0 -933.25 1365.6 9 D 110.0 110.0 -931.1 901.85 10 GND_LSPD 110.0 110.0 -931.1 563.25 11 GND 110.0 180.0 -931.1 342.25 12 GND_ESD 110.0 110.05 -931.1 119.42 13 VCC 110.0 180.0 -931.1 -115.05 14 VCC_VREF 110.0 180.05 -931.1 -371.08 15 R 110.0 180.0 -931.1 -1350.0 16 NC 90.0 90.0 -711.1 -1394.95 17 NC 90.0 90.0 -561.1 -1394.95 18 NC 90.0 90.0 -411.1 -1394.95 19 NC 90.0 90.0 -261.1 -1394.95 20 NC 90.0 90.0 -111.1 -1394.95 21 NC 90.0 90.0 38.9 -1394.95 22 NC 110.0 110.0 756.9 -1307.3 23 VREF 110.0 180.0 775.3 -1072.3 24 CANL 110.0 180.0 772.1 2.15 25 CANH 110.0 180.05 772.1 343.33 26 RS 110.0 180.0 848.1 1140.6 NOTE: Origin of coordinates is the center of the die. NC = No connect FIGURE A-3. Die bonding pad locations and electrical functions - continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 43 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-15228 Device type 03 Die bonding pad locations and electrical functions Die physical dimensions. Die size: 2413 microns x 3322 microns. Die thickness: 305 microns 25 microns. Interface materials. Top metallization: 300 Å TiN on 2.8 microns AlCu In bond pads, TiN has been removed. Backside metallization: Silicon Glassivation. Type: 12 kÅ silicon nitride on 3 kÅ oxide Substrate: P6SOI: Bonded wafer dielectrically isolated BiCMOS. Assembly related information. Substrate potential: Floating Special assembly instructions: Tie GND_LPSD (pad 10) and GND (pad 11) and GND_ESD (pad 12) all together and to GND. Tie VCC (pad 13) and VCC_VREF (pad 14) both together and to VCC. All pads identified as NC shall not be connected and shall remain floating. FIGURE A-3. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-15228 A REVISION LEVEL A SHEET 44 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 16-04-05 Approved sources of supply for SMD 5962-15228 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/. Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962L1522801VXC 34371 ISL72026SEHVF 5962L1522801V9A 34371 ISL72026SEHVX 5962L1522802VXC 34371 ISL72027SEHVF 5962L1522802V9A 34371 ISL72027SEHVX 5962L1522803VXC 34371 ISL72028SEHVF 5962L1522803V9A 34371 ISL72028SEHVX 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. Vendor CAGE number 34371 Vendor name and address Intersil Corporation 1650 Robert J. Conlan Blvd. NE Palm Bay, FL 32905-3406 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.