5962-15228

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
16-04-05
C. SAFFLE
Add paragraph 4.4.4.1.1 Accelerated annealing test and make change to
paragraph A.4.3.1.- ro
A
REV
A
A
A
A
A
A
A
A
A
A
SHEET
35
36
37
38
39
40
41
42
42
44
REV
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
SHEET
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
REV STATUS
REV
A
A
A
A
A
A
A
A
A
A
A
A
A
A
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
CHARLES F. SAFFLE
DRAWING APPROVAL DATE
MICROCIRCUIT, LINEAR, 3.3 V CAN
TRANSCEIVER MONOLITHIC SILICON
16-03-01
REVISION LEVEL
A
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-15228
1 OF 44
5962-E295-16
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
L
15228
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
X
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Circuit function
01
ISL72026SEH
Radiation hardened, 3.3 V can transceiver,
1 Mbps, listen mode, loopback
02
ISL72027SEH
Radiation hardened, 3.3 V can transceiver,
1Mbps, listen mode, split termination
output
03
ISL72028SEH
Radiation hardened, 3.3 V can transceiver,
1Mbps, low power shutdown, split
termination output
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
See figure 1
Terminals
8
Package style
Flat pack with grounded lid
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
2
1.3 Absolute maximum ratings. 1/
VCC to GND with / without ion beam ........................................................................................ -0.3 V to 4.5 V
CANH, CANL, VREF under ion beam ...................................................................................... 16 V
CANH, CANL, VREF ................................................................................................................ 20 V
I/O voltages
D, R, RS ............................................................................................................................... -0.5 V to 7 V
Receiver output current ............................................................................................................ -50 mA to 50 mA
Output short circuit duration ...................................................................................................... Continuous
Storage temperature range ...................................................................................................... -65C to +150C
Junction temperature (TJ) ......................................................................................................... +175C
Lead temperature (soldering, 10 seconds) ............................................................................... +300C
Thermal resistance, junction-to-ambient (JA) direct attach ..................................................... 39C/W 2/
Thermal resistance, junction-to-case (JC) direct attach .......................................................... 7C/W 3/
1.4 Recommended operating conditions.
VCC supply voltage ................................................................................................................... 3.0 V to 3.6 V
Voltage on CAN I/O ..................................................................................................................-7 V to 12 V
VIH D logic pin (D, LBK) ........................................................................................................... 2 V to 5.5 V
VIL D logic pin (D, LBK) ............................................................................................................ 0 V to 0.8 V
IOH driver (VOD = 1.5 V, VCC = 3.3 V) ..................................................................................... -40 mA
IOH receiver (VOH = 2.4 V) .......................................................................................................-8 mA
IOL driver (VOD = 1.5 V, VCC = 3.3 V) ......................................................................................+40 mA
IOL receiver ..............................................................................................................................+8 mA
Ambient operating temperature range (TA) .............................................................................. -55C to +125C
1.5 Radiation features.
Maximum total dose available: low dose rate tests - dose rate  10 mrad(Si)/s: ...................... 50 krad(Si) 4/
Single event phenomena (SEP) :
2
No SEL occurs at effective linear energy threshold (LET): ................................................... 60 MeV·cm /mg 5/
2
No SEB occurs at effective linear energy threshold (LET): ................................................... 60 MeV·cm /mg 5/
No SET occurs at effective linear energy threshold (LET):
2
................................................ 2.7 MeV·cm /mg
______
1/
2/
3/
4/
5/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
JA is measured with the component mounted on a high effective thermal conductivity test board (two buried 1 ounce
copper planes) with “direct attach” features package base mounted to printed circuit board (PCB) thermal land with a
10mil gap fill material having a k of 1W/m-K. See manufacturer Tech Brief TB379.
For JC, the case temperature location is the center of the package underside.
Device types 01, 02, 03 have been tested at low dose rate only. The radiation end point limits for the noted parameters are
guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition D to a maximum total ionizing dose
(TID) level of 75 krads(Si). Device types 01, 02, 03 are wafer acceptance tested to 75 krads(Si) total ionizing dose per
MIL-STD-883, method 1019, condition D, per customer request, and are marked at the standard 50 krads(Si) level.
Device types 01, 02, 03 use silicon on insulator (SOI) technology. No single-event burnout (SEB) or single-event
latchup (SEL) was observed when irradiated with Pr ions at normal incidence, corresponding to a surface LET of
2
60 MeV·cm /mg. The normal particle range into silicon for Pr ions after 30 mm of air is about 110 m and the Bragg peak
range is 37 m, resulting in ion penetration well beyond the sensitive volume of the devices.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192
-
Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion
Irradiation of semiconductor Devices.
(Copies of these documents are available online at http://www.astm.org or from ASTM International, 100 Barr Harbor Drive,
P.O. Box C700, West Conshohocken, PA, 19428-2959).
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
4
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Test circuits and waveforms. The test circuit and waveforms shall be as specified on figures 3 through 24.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the
full ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table IA.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
5
TABLE IA. Electrical performance characteristics.
Test
Symbol
Conditions 1/
-55C  TA  +125C
VCC = 3.0 V to 3.6 V
unless otherwise specified
Group A
subgroups
Device
type
Limits
Unit
Min
Max
2.25
VCC
Driver electrical characteristics
Dominant bus output
voltage
Recessive bus output
voltage
Dominant output
differential voltage
Recessive output
differential voltage
VO(DOM)
VO(REC)
VOD(DOM)
VOD(REC)
1,2,3
see figures 3, 4
1 2/
2.25
VCC
D = 0 V, CANL, RS = GND,
1,2,3
0.1
1.25
see figures 3, 4
1 2/
0.1
1.25
1.8
2.7
M, D, P, L
M, D, P, L
1,2,3
see figures 3, 4
M, D, P, L
1 2/
1.8
2.7
D = 3 V, CANL, RS = GND,
60  and no load,
see figures 3, 4
M, D, P, L
1,2,3
1.8
2.8
1 2/
1.8
2.8
D = 0 V, RS = GND,
1,2,3
1.5
3.0
see figures 3, 4
1 2/
1.5
3.0
D = 0 V, RS = GND,
1,2,3
1.2
3.0
see figures 4, 5
1 2/
1.2
3.0
-120
12
M, D, P, L
M, D, P, L
VIL
see figures 3, 4
1 2/
-120
12
1,2,3
-500
50
1 2/
-500
50
2.0
5.5
2.0
5.5
0
0.8
0
0.8
2.0
5.5
2.0
5.5
0
0.8
0
0.8
M, D, P, L
1,2,3
3/ 4/
VIH
1,2,3
3/ 4/
VIL
01
1 2/ 4/
1,2,3
3/
M, D, P, L
Logic input low
voltage (D)
01
1 2/ 4/
M, D, P, L
Logic input high
voltage (D)
01, 02,
03
1,2,3
M, D, P, L
Logic input low
voltage (LBK)
01, 02,
03
D = 3 V, RS = GND,
M, D, P, L
VIH
01, 02,
03
D = 3 V, CANH, RS = GND,
60  and no load,
D = 3 V, RS = GND, no load
Logic input high
voltage (LBK)
01, 02,
03
D = 0 V, CANH, RS = GND,
01, 02,
03
1 2/
1,2,3
3/
M, D, P, L
01, 02,
03
1 2/
V
V
V
mV
V
V
V
V
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
6
TABLE IA. Electrical performance characteristics - Continued.
Test
Conditions 1/
-55C  TA  +125C
Symbol
Group A
subgroups
Device
type
VCC = 3.0 V to 3.6 V
unless otherwise specified
Limits
Unit
Min
Max
-30
30
-30
30
-30
30
-30
30
-30
30
-30
30
-30
30
-30
30
Driver electrical characteristics – continued.
Logic high level input
current (LBK)
IIH
1,2,3
LBK = 2.0 V 4/
M, D, P, L
Logic high level input
current (D)
IIH
D = 2.0 V
Logic low level input current
(LBK)
IIL
IIL
D = 0.8 V
RS input voltage for
listen mode
M, D, P, L
Output short circuit
current
IOSC
VCANH = -7 V,
CANL = open, see figures 6, 7
M, D, P, L
VCANH = +12 V,
CANL = open, see figures 6, 7
M, D, P, L
VCANL = -7 V, CANH = open,
see figures 6, 7
M, D, P, L
VCANL = +12 V,
CANH = open, see figures 6, 7
M, D, P, L
01, 02,
03
1 2/
1,2,3
VIN(RS)
01
1 4/
1,2,3
M, D, P, L
01, 02,
03
1 2/
1,2,3
LBK = 0.8 V 4/
M, D, P, L
Logic low level input current
(D)
1 2/ 4/
1,2,3
M, D, P, L
01
01, 02,
0.75 VCC
03
0.75
1 2/
1,2,3
VCC
01, 02,
03
1 2/
5.5
A
A
A
A
V
5.5
-250
mA
-250
1,2,3
1
1 2/
1
1,2,3
-1
1 2/
-1
1,2,3
250
1 2/
250
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
7
TABLE IA. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/
-55C  TA  +125C
VCC = 3.0 V to 3.6 V
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Unit
Max
Receiver electrical characteristics
Input threshold
voltage (rising)
(LBK)
VTHR
LBK = 0 V,
4/
RS = GND, 10 k, 50 k,
(recessive to dominant),
see figures 8, 9, 10, and 11
1,2,3
M, D, P, L
Input threshold
voltage (rising)
VTHR
VTHF
RS = GND, 10 k, 50 k,
(recessive to dominant),
see figures 8, 9, 10, and 11
1,2,3
LBK = 0 V, 4/
RS = GND, 10 k, 50 k,
(dominant to recessive),
see figures 8, 9, 10, and 11
1,2,3
VTHF
1,2,3
M, D, P, L
Input hysteresis
Listen mode input
threshold voltage
(rising)
VHYS
VTHRLM
VTHFLM
(VTHR - VTHF), RS = GND,
10 k, 50 k, see figures 8, 9,
1,2,3
10, and 11
1 2/
M, D, P, L
RS = VCC, (recessive to
dominant),
see figures 8, 9, and 10
1,2,3
VHYSLM
RS = VCC, (dominant to
recessive),
see figures 8, 9, and 10
1,2,3
(VTHR - VTHF), RS =VCC,
see figures 8, 9, and 10
1,2,3
VOH
1,2,3
M, D, P, L
Receiver output low
voltage
VOL
01
500
01, 02,
03
500
1,2,3
M, D, P, L
mV
40
mV
40
01, 02
1150
mV
1150
01, 02
525
mV
525
01, 02
50
mV
50
01, 02,
03
1 2/
IO = +4 mA
mV
500
1 2/
IO = -4 mA
mV
500
1 2/
M, D, P, L
Receiver output
high voltage
01
1 2/
M, D, P, L
Listen mode input
hysteresis
900
900
1 2/
M, D, P, L
Listen mode input
threshold voltage
(falling)
01, 02,
03
1 2/ 4/
RS = GND, 10 k, 50 k,
(dominant to recessive),
see figures 8, 9, 10, and 11
mV
900
1 2/
M, D, P, L
Input threshold
voltage (falling)
900
1 2/ 4/
M, D, P, L
Input threshold
voltage (falling)
(LBK)
01
2.4
V
2.4
01, 02,
03
1 2/
0.4
V
0.4
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
8
TABLE IA. Electrical performance characteristics - Continued.
Test
Conditions 1/
-55C  TA  +125C
Symbol
Group A
subgroups
Device
type
VCC = 3.0 V to 3.6 V
unless otherwise specified
Limits
Min
Unit
Max
Receiver electrical characteristics – continued.
Input current for CAN
bus (LBK)
ICAN
CANH or CANL at 12 V,
D = 3 V, other bus pin at 0 V,
LBK = RS = GND 4/
M, D, P, L
CANH or CANL at 12 V, 4/
D = 3 V, VCC = 0 V, other bus
pin at 0 V, LBK = RS = GND
M, D, P, L
CANH or CANL at -7 V,
D = 3 V, other bus pin at 0 V,
LBK = RS = GND 4/
M, D, P, L
CANH or CANL at -7 V, 4/
D = 3 V, VCC = 0 V, other bus
pin at 0 V, LBK = RS = GND
M, D, P, L
Input current for CAN
bus
ICAN
500
1,2,3
250
1 2/ 4/
250
1,2,3
-400
1 2/ 4/
-400
1,2,3
-150
1 2/ 4/
-150
01, 02,
03
1 2/
500
1,2,3
250
1 2/
250
M, D, P, L
Input to GND, D = 3 V,
LBK = RS = GND
Input to GND, D = 3 V,
RS = GND
-400
1 2/
-400
1,2,3
-150
1 2/
-150
01
4 2/ 4/
4,5,6
M, D, P, L
500
1,2,3
4,5,6
M, D, P, L
RIN
1 2/ 4/
RS = GND
CANH or CANL at -7 V,
D = 3 V, VCC = 0 V, other bus
pin at 0 V, RS = GND
M, D, P, L
Input resistance
(CANH or CANL)
500
1,2,3
CANH or CANL at -7 V,
D = 3 V, other bus pin at 0 V,
RS = GND
M, D, P, L
RIN
01
CANH or CANL at 12 V,
D = 3 V, other bus pin at 0 V,
CANH or CANL at 12 V,
D = 3 V, VCC = 0 V, other bus
pin at 0 V, RS = GND
M, D, P, L
Input resistance
(CANH or CANL) (LBK)
1,2,3
01, 02,
03
4 2/
20
50
20
50
20
50
20
50
A
A
k
k
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
9
TABLE IA. Electrical performance characteristics - Continued.
Test
Conditions 1/
-55C  TA  +125C
Symbol
Group A
subgroups
Device
type
VCC = 3.0 V to 3.6 V
unless otherwise specified
Limits
Unit
Min
Max
40
100
40
100
40
100
40
100
Receiver electrical characteristics – continued.
Differential input
resistance (LBK)
RIND
Input to GND, D = 3 V,
LBK = RS = GND
4,5,6
M, D, P, L
Differential input
resistance
RIND
Input to GND, D = 3 V,
RS = GND
4 2/ 4/
4,5,6
M, D, P, L
01
01,02,
03
4 2/
k
k
Supply current
Supply current, listen mode
ICC(L)
RS = D = VCC, LBK = 0 V 4/
(LBK)
M, D, P, L
Supply current, listen mode
ICC(L)
Supply current, dominant
ICC(LPS)
ICC(DOM)
(LBK)
M, D, P, L
1 4/
D = LBK = RS = GND, no load
1,2,3
4/
Supply current, dominant
ICC(DOM)
M, D, P, L
D = RS = GND, no load
M, D, P, L
Supply current, recessive
ICC(REC)
(LBK)
D = VCC, LBK = RS = GND,
no load 4/
Supply current, recessive
ICC(REC)
M, D, P, L
D = VCC, RS = GND, no load
M, D, P, L
01, 02
03
01
mA
50
A
7
mA
7
01, 02,
03
7
mA
7
01
1 2/ 4/
1,2,3
2
50
1 2/
1,2,3
mA
2
1 2/ 4/
1,2,3
2
2
1 2/
1,2,3
RS = D = VCC 4/
01
1 2/ 4/
1,2,3
RS = D = VCC
M, D, P, L
Supply current, low power
shutdown mode
1,2,3
5
mA
5
01, 02,
03
1 2/
5
mA
5
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
10
TABLE IA. Electrical performance characteristics - Continued.
Test
Conditions 1/
-55C  TA  +125C
Symbol
Group A
subgroups
Device
type
VCC = 3.0 V to 3.6 V
unless otherwise specified
Cold sparing bus current
CANH leakage current
IL(CANH)
1,2,3
VCC =0.2 V, RS = GND,
CANH = -7 V or 12 V,
01, 02,
03
Limits
Unit
Min
Max
-25
25
-25
25
-25
25
-25
25
-25
25
-25
25
A
CANL = float, D = VCC
M, D, P, L
CANL leakage current
IL(CANL)
1 2/
1,2,3
VCC =0.2 V, RS = GND,
CANL = -7 V or 12 V,
01, 02,
03
A
CANH = float, D = VCC
M, D, P, L
VREF leakage current
IL(VREF)
1 2/
1,2,3
VCC =0.2 V,
02, 03
A
VREF= -7 V or 12 V, D = VCC
M, D, P, L
Driver switching characteristics
Propagation delay low to
tPDLH1
high
RS = GND, see figures 12, 13
M, D, P, L
tPDLH2
RS = 10 k, see figures 12, 13
M, D, P, L
tPDLH3
RS = 50 k, see figures 12, 13
M, D, P, L
Propagation delay high to
low
tPDHL1
RS = GND, see figures 12, 13
M, D, P, L
tPDHL2
RS = 10 k, see figures 12, 13
M, D, P, L
tPDHL3
RS = 50 k, see figures 12, 13
M, D, P, L
1 2/
9,10,11
01, 02,
03
9 2/
9,10,11
01, 02,
03
01, 02,
03
01, 02,
03
155
ns
155
01, 02,
03
9 2/
9,10,11
1400
1400
9 2/
9,10,11
850
850
9 2/
9,10,11
ns
150
9 2/
9,10,11
150
800
800
01, 02,
03
9 2/
1300
1300
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
11
TABLE IA. Electrical performance characteristics - Continued.
Test
Conditions 1/
-55C  TA  +125C
Symbol
Group A
subgroups
Device
type
VCC = 3.0 V to 3.6 V
unless otherwise specified
Limits
Min
Unit
Max
Driver switching characteristics – continued.
Output skew
tSKEW1
RS = GND, see figures 12, 13,
(|tPHL - tPLH|)
M, D, P, L
tSKEW2
RS = 10 k,
see figures 12, 13,
(|tPHL - tPLH|)
tSKEW3
Output rise time
tr1
M, D, P, L
RS = GND, see figures 12, 13,
(driver fastest speed)
M, D, P, L
tr2
RS = 10 k,
see figures 12, 13,
(medium speed)
tr3
RS = 50 k ,
see figures 12, 13,
tf1
RS = GND,
see figures 12, 13,
(driver fastest speed)
(slowest speed)
Output fall time
M, D, P, L
(medium speed)
tf3
RS = 50 k,
see figures 12, 13,
(slowest speed)
800
800
01, 02,
03
01, 02,
03
01, 02,
03
01, 02,
03
9 2/
01, 02,
03
9 2/
9,10,11
M, D, P, L
01, 02,
03
9 2/
9,10,11
M, D, P, L
510
510
9 2/
9,10,11
RS = 10 k,
see figures 12, 13,
01, 02,
03
9 2/
9,10,11
M, D, P, L
tr2
9,10,11
ns
50
9 2/
9,10,11
M, D, P, L
50
9 2/
9,10,11
M, D, P, L
01, 02,
03
9 2/
9,10,11
RS = 50 k,
see figures 12, 13,
(|tPHL - tPLH|)
9,10,11
01, 02,
03
9 2/
20
100
20
100
200
780
200
780
400
1400
400
1400
10
75
10
75
175
500
175
500
300
1000
300
1000
ns
ns
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
12
TABLE IA. Electrical performance characteristics - Continued.
Test
Conditions 1/
-55C  TA  +125C
Symbol
Group A
subgroups
Device
type
VCC = 3.0V to 3.6V
unless otherwise specified
Driver switching characteristics – continued.
t(LOOP1) RS = GND, see figures 14, 15
Total loop delay, driver input
to receiver output,
RS = GND, see figures 16, 17
recessive to dominant
M, D, P, L
RS = 10 k, see figures 14, 15
Min
9,10,11
RS = 50 k, see figures 14, 15
Total loop delay, driver
input to receiver output,
dominant to recessive
t(LOOP2)
RS = GND, see figures 14, 15
02, 03
210
9 2/
01, 02,
03
210
9,10,11
01
875
02, 03
875
9 2/
01, 02,
03
875
9,10,11
01
1400
02, 03
1400
9 2/
01, 02,
03
1400
9,10,11
01
270
02, 03
270
9 2/
01, 02,
03
270
9,10,11
01
825
02, 03
825
9 2/
01, 02,
03
825
9,10,11
01
1300
02, 03
1300
01, 02,
03
1300
RS = GND, see figures 16, 17
M, D, P, L
RS = 10 k, see figures 14, 15
RS = 10 k, see figures 16, 17
M, D, P, L
RS = 50 k, see figures 14, 15
RS = 50 k, see figures 16, 17
M, D, P, L
Max
210
RS = 50 k, see figures 16, 17
M, D, P, L
Unit
01
RS = 10 k, see figures 16, 17
M, D, P, L
Limits
9 2/
ns
ns
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
13
TABLE IA. Electrical performance characteristics - Continued.
Test
Conditions 1/
-55C  TA  +125C
Symbol
Group A
subgroups
Device
type
VCC = 3.0 V to 3.6 V
unless otherwise specified
Limits
Min
Unit
Max
Driver switching characteristics – continued.
Listen to valid dominant time
tL-DOM
See figures 18, 20
9,10,11
See figures 18, 20
tLPS-DOM
15
s
02
M, D, P, L
Low power shutdown valid
dominant time
01
See figures 21, 22
4/
M, D, P, L
9 2/
01, 02
15
9,10,11
03
15
9 2/ 4/
s
15
Receiver switching characteristics
Propagation delay low to
high
tPLH
See figures 8, 9, 10
1,2,3
M, D, P, L
Propagation delay high to
low
tPHL
See figures 8, 9, 10
Rx skew
tSKEW1
See figures 8, 9, 10,
|(tPHL - tPLH)|
LBK delay I/O to Rx output
tLBK
See figures 23, 24
4/
M, D, P, L
01, 02,
03
110
ns
110
01, 02,
03
35
ns
35
1 2/
1,2,3
ns
110
1 2/
1,2,3
M, D, P, L
110
1 2/
1,2,3
M, D, P, L
01, 02,
03
01
75
1 2/ 4/
ns
75
VREF / RS pin characteristics
VREF pin voltage
VREF
5 A  IREF  5 A
1,2,3
M, D, P, L
50 A  IREF  50 A
IRSH
IRSL
1 2/
1,2,3
RS = 0.75 X VCC
M, D, P, L
RS input current, low
1 2/
1,2,3
M, D, P, L
RS input current, high
02, 03
RS = GND
01,02,
03
1
1,2,3
0.45 x
0.55 x
VCC
VCC
0.45 x
0.55 x
VCC
VCC
0.4x
0.6x
VCC
VCC
0.4x
0.6x
VCC
VCC
V
A
-10
-10
01,02,
03
-450
0
A
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
14
TABLE IA. Electrical performance characteristics - Continued.
1/
Unless otherwise specified, VCC = 3.0 V to 3.6 V.
2/
RHA device types 01, 02, and 03 supplied to this drawing will meet all levels M, D, P, and L of irradiation for condition D.
However, device types 01, 02, and 03 are only are tested in accordance with MIL-STD-883, method 1019, condition D
(see 1.5 herein) at a total dose of 75 krads(Si). Device types 01, 02, and 03 are wafer acceptance tested 75 krads(Si)
total ionizing dose per MIL-STD-883, method 1019, condition D, per customer request, and are marked at the standard
50 krads(Si) level.
Pre and Post irradiation values and parameters are as specified in Table IA. When performing post irradiation electrical
measurements for any RHA level, TA = +25C.
3/
Parameter included in functional testing.
4/
Performed during the 100% screening operations in production over the full operating temperature range. Not performed as
part of TCI Group C and Group E. Radiation characterization testing performed as part of initial release and after any major
changes in design.
TABLE IB. SEP test limits. 1/ 2/ 3/
Device
types
SEP
Temperature
(TC)
Bus voltage
(VCANH, VCANL)
Supply voltage
(VCC)
Effective linear energy
transfer (LET)
2
01, 02, 03
No SEL
125°C
±18 V
4.5 V
60 MeV·cm /mg
01, 02, 03
No SEB
125°C
±18 V
4.5 V
60 MeV·cm /mg
01, 02, 03
No SET
25°C
Floating
3.0 V
2.7 MeV·cm /mg
2
2
1/ For SEP test conditions, see 4.4.4.2 herein.
2/ Technology characterization and model verification supplemented by in-line data may be used in lieu of end
of line testing. Test plan must be approved by the technical review board and qualifying activity.
3/ Limits are characterized at initial qualification and after any design or process changes which may affect the
SEP characteristics but are not production tested unless specified by the customer through the purchase order
or contract. See manufacturer’s SEE test report for more information.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
15
Case outline X
FIGURE 1. Case outline.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
16
Case outline X – continued.
Dimensions
Inches
Symbol
Millimeters
Min
Max
Min
Max
A
.087
.110
2.21
2.79
A1
.026
.036
0.66
0.92
b
.015
.022
0.38
0.56
c
.004
.009
0.10
0.23
D
.245
.265
6.22
6.73
E
.245
.265
6.22
6.75
E1
.170
.180
4.32
4.57
E2
0.03
e
0.76
.050 BSC
L
.325
1.27 BSC
.370
8.26
9.40
NOTES:
1. Controlling dimensions are inch, millimeter dimensions are given for reference only.
2. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located
within the shaded area shown. The manufacturer’s identification shall not be used as pin one identification mark.
Alternately, a tab may be used to identify pin one.
3. If a pin one identification mark is used in addition to a tab, the limits of the tab dimension do not apply.
4. The maximum limits of lead dimensions (section A-A) shall be measured at the centroid of the finished lead surfaces,
When solder dip or tin plate lead finish is applied.
5. Measure dimension at all four corners.
6. For bottom brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the packages
to cover the leads.
7. Dimension shall be measured at the point of exit (beyond the meniscus) of the lead from the body.
Dimension minimum shall be reduced by 0.0015 inch (.038 mm) maximum when solder dip lead finish is applied.
FIGURE 1. Case outline – continued..
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
17
Device types
01
Case outline
X
Terminal
number
Terminal
symbol
D
02
03
X
X
Terminal
symbol
1
D
D
D
2
GND
GND
GND
3
VCC
VCC
VCC
4
R
R
R
5
LBK
VREF
VREF
6
CANL
CANL
CANL
7
CANH
CANH
CANH
8
RS
RS
RS
Package lid
Tied internally
to terminal 2
(GND)
Tied internally
to terminal 2
(GND)
Tied internally
to terminal 2
(GND)
Description
GND
CAN driver digital input.
The bus states are LOW = dominant and HIGH = recessive.
Ground pin of the device.
VCC
Supply pin of the device. The typical voltage for the device is 3.3 V.
R
CANL
CAN data receiver output for the device.
The bus states are LOW = dominant and HIGH = recessive.
A resistor to GND from this pin controls the rise and fall time of the CAN output
waveform. Drive RS HIGH to put into listen mode.
CAN bus line for low level output
CANH
CAN bus line for high level output
RS
LBK
VREF
Package lid
A high on this pin places CANH & CANL pins in a high impedance state.
The rest of the circuit remains active so that the TX and Rx can loopback
diagnostic information.
Internal tied low.
VCC/2 reference output for split mode termination.
Tied internally to terminal 2 (GND)
FIGURE 2. Terminal connections.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
18
FIGURE 3. Driver test circuit.
FIGURE 4. Driver bus voltage definitions.
FIGURE 5. Driver common mode circuit.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
19
FIGURE 6. Output short circuit current circuit.
FIGURE 7. Output short circuit current waveforms.
FIGURE 8. Receiver voltage definitions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
20
FIGURE 9. Receiver test circuit.
FIGURE 10. Receiver test measurement points.
Input
VCANH
-6.1 V
12 V
-1 V
12 V
-6.5 V
12 V
-7 V
6V
Open
VCANL
-7 V
11.1 V
-7 V
6V
-7 V
11.5 V
-1 V
12 V
Open
Output
R
L
L
L
L
H
H
H
H
H
Measured
VDIFF
900 mV
900 mV
6V
6V
500 mV
500 mV
6V
6V
X
FIGURE 11. Differential input voltage threshold test.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
21
VIN = 125 kHz, 0 V to VCC, duty cycle 50%, tr = tf  6 ns, Zo = 50 .
CL includes fixture and instrumentation capacitance.
FIGURE 12. Driver timing test circuit.
FIGURE 13. Driver timing measurement points .
VIN = 125 kHz, duty cycle 50%, tr = tf  6 ns.
FIGURE 14. Total loop delay test circuit.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
22
FIGURE 15. Total loop delay test measurement points.
VIN = 125 kHz, duty cycle 50%, tr = tf  6 ns.
FIGURE 16. Total loop delay test circuit.
FIGURE 17. Total loop delay test measurement points.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
23
VIN = 125 kHz, duty cycle 50%, tr = tf  6 ns.
FIGURE 18. Listen to valid dominant time circuit.
VIN = 125 kHz, 0 V to VS, duty cycle 50%, tr = tf  6 ns.
FIGURE 19. Listen to valid dominate time circuit.
FIGURE 20. Listen to valid dominate time measurement points.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
24
VIN = 125 kHz, 0 V to VS, duty cycle 50%, tr = tf  6 ns.
FIGURE 21. Low power shutdown to dominate time circuit.
FIGURE 22. Low power shutdown to time measurement points.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
25
VIN = 125 kHz, 0 V to VS, duty cycle 50%, tr = tf  6 ns.
FIGURE 23. Loop back delay to dominant time test circuit.
FIGURE 24. Loop back delay to dominant measurement points.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
26
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 7 and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
27
TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
Device
class Q
class V
1, 9
1, 9
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
1, 2, 3, 4, 1/
5, 6, 9, 10, 11
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1, 2, 3, 4, 5,
6, 9, 10, 11
1, 2, 3, 4, 5,
6, 9, 10, 11
1, 9
1, 4, 9
1, 2, 3, 1/ 2/
4, 5, 6, 9, 10,
11
1, 2, 3, 4, 5,
6, 9, 10, 11
1, 2, 3, 4, 2/
1, 9
1, 4, 9
1/ For device class Q, PDA applies to subgroup 1.
For device class V, PDA applies to subgroups 1, 9, and .
2/ Delta limits (see table IIB) shall be required and the delta values shall be computed
with reference to the zero hour electrical parameters (see table IA).
TABLE IIB. Burn-in and operating life test delta parameters. TA = +25C.
Parameters
D logic input
leakage
D logic input
leakage
Symbol
01, 02, 03
3.0 A
IIL
D = 0.8 V
01, 02, 03
3.0 A
D = LBK = RS = 0 V,
no load
01, 02, 03
1.0 mA
01, 02, 03
0.75 A
Supply current
recessive
ICC(REC)
D = VCC, LBK = RS = 0 V,
no load
VOH
IO = -4 mA
01, 02, 03
0.10 V
VOL
IO = +4 mA
01, 02, 03
0.10 V
VO(DOM)
D = 0 V, CANH = RS = 0 V
01, 02, 03
0.10 V
VO(DOM)
D = 0 V, CANL = RS = 0 V
01, 02, 03
0.10 V
VO(REC)
D = 3 V, CANH = RS = 0 V,
60 , no load
01, 02, 03
0.10 V
VO(REC)
D = 3 V, CANL = RS = 0 V,
60 , no load
01, 02, 03
0.10 V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Limit
D = 2.0 V
ICC(DOM)
Recessive bus
output voltage
Device types
IIH
Supply current
dominant
Receiver output
high voltage
Receiver output
low voltage
Dominant bus
output voltage
Dominant bus
output voltage
Recessive bus
output voltage
Conditions
VCC = 3.0 V and 3.6 V
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
28
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table IA at TA = +25C 5C, after exposure, to the subgroups specified in
table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition D and as specified herein.
4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level
greater than 5 krads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall
be the pre-irradiation end-point electrical parameter limit at +25C 5C. Testing shall be performed at initial qualification and
after any process or design changes which may affect the RHA response of the device.
4.4.4.2 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be performed on
class V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as
approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or
latchup characteristics. Test four devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP
testing. The test conditions for SEP are as follows:
a. The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive
(i.e. 0  angle  60). No shadowing of the ion beam due to fixturing or package related effects is allowed.
7
2
b. The fluence shall be  100 errors or  10 ions/cm .
2
5
2
c. The flux shall be between 10 and 10 ions/cm /s. The cross-section shall be verified to be flux independent by
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
d. The particle range shall be  20 micron in silicon.
e. The test temperature shall be +25C and the maximum rated operating temperature 10C.
f. Bias conditions shall be defined by the manufacturer for the latchup measurements.
g. For SEP test limits, see Table IB herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
29
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.
6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available from the
device manufacturer:
a. RHA upset levels.
b. Test conditions (SEP).
c. Occurrence of latchup (SEL).
d. Number of transients (SET).
e. Occurrence of burn-out (SEB).
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
30
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
L
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
15228
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Circuit function
01
ISL72026SEH
3.3 V can transceiver, 1 Mbps, listen
mode, loopback
02
ISL72027SEH
3.3 V can transceiver, 1 Mbps, listen
mode, split termination output
03
ISL72028SEH
3.3 V can transceiver, 1 Mbps, low power
shutdown, split termination output
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
31
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01
02
03
A-1
A-2
A-3
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01
02
03
A-1
A-2
A-3
A.1.2.4.3 Interface materials.
Die type
Figure number
01
02
03
A-1
A-2
A-3
A.1.2.4.4 Assembly related information.
Die type
Figure number
01
02
03
A-1
A-2
A-3
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
32
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.4 herein.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
33
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table IA of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table IA.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4,
4.4.4.1, 4.4.4.1.1, and 4.4.4.2 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
34
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see A.3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
35
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
Device type 01
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
36
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
Device type 01
Die layout X - Y coordinates
Pad number
Pad name
X (µm)
Y (µm)
X
Y
1
NC
90.0
90.0
901.4
1365.6
2
NC
90.0
90.0
767.4
1365.6
3
NC
90.0
90.0
-183.23
1365.6
4
NC
90.0
90.0
-333.25
1365.6
5
NC
90.0
90.0
-483.25
1365.6
6
NC
90.0
90.0
-633.25
1365.6
7
NC
90.0
90.0
-783.25
1365.6
8
NC
90.0
90.0
-933.25
1365.6
9
D
110.0
110.0
-931.1
901.85
10
NC
110.0
110.0
-931.1
563.25
11
GND
110.0
180.0
-931.1
342.25
12
GND_ESD
110.0
110.05
-931.1
119.42
13
VCC
110.0
180.0
-931.1
-115.05
14
NC
110.0
180.05
-931.1
-371.08
15
R
110.0
180.0
-931.1
-1350.0
16
NC
90.0
90.0
-711.1
-1394.95
17
NC
90.0
90.0
-561.1
-1394.95
18
NC
90.0
90.0
-411.1
-1394.95
19
NC
90.0
90.0
-261.1
-1394.95
20
NC
90.0
90.0
-111.1
-1394.95
21
NC
90.0
90.0
38.9
-1394.95
22
LBK
110.0
110.0
756.9
-1307.3
23
NC
110.0
180.0
775.3
-1072.3
24
CANL
110.0
180.0
772.1
2.15
25
CANH
110.0
180.05
772.1
343.33
26
RS
110.0
180.0
848.1
1140.6
NOTE: Origin of coordinates is the center of the die. NC = No connect
FIGURE A-1. Die bonding pad locations and electrical functions – continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
37
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
Device type 01
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 2413 microns x 3322 microns.
Die thickness: 305 microns  25 microns.
Interface materials.
Top metallization: 300 Å TiN on 2.8 microns AlCu
In bond pads, TiN has been removed.
Backside metallization: Silicon
Glassivation.
Type: 12 kÅ silicon nitride on 3 kÅ oxide
Substrate: P6SOI: Bonded wafer dielectrically isolated BiCMOS.
Assembly related information.
Substrate potential: Floating
Special assembly instructions: Tie GND (pad 11) and GND_ESD (pad 12) both together and to GND.
All pads identified as NC shall not be connected and shall remain floating.
FIGURE A-1. Die bonding pad locations and electrical functions – continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
38
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
Device type 02
FIGURE A-2. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
39
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
Device type 02
Die layout X - Y coordinates
Pad number
Pad name
X (µm)
Y (µm)
X
Y
1
NC
90.0
90.0
901.4
1365.6
2
NC
90.0
90.0
767.4
1365.6
3
NC
90.0
90.0
-183.23
1365.6
4
NC
90.0
90.0
-333.25
1365.6
5
NC
90.0
90.0
-483.25
1365.6
6
NC
90.0
90.0
-633.25
1365.6
7
NC
90.0
90.0
-783.25
1365.6
8
NC
90.0
90.0
-933.25
1365.6
9
D
110.0
110.0
-931.1
901.85
10
NC
110.0
110.0
-931.1
563.25
11
GND
110.0
180.0
-931.1
342.25
12
GND_ESD
110.0
110.05
-931.1
119.42
13
VCC
110.0
180.0
-931.1
-115.05
14
VCC_VREF
110.0
180.05
-931.1
-371.08
15
R
110.0
180.0
-931.1
-1350.0
16
NC
90.0
90.0
-711.1
-1394.95
17
NC
90.0
90.0
-561.1
-1394.95
18
NC
90.0
90.0
-411.1
-1394.95
19
NC
90.0
90.0
-261.1
-1394.95
20
NC
90.0
90.0
-111.1
-1394.95
21
NC
90.0
90.0
38.9
-1394.95
22
NC
110.0
110.0
756.9
-1307.3
23
VREF
110.0
180.0
775.3
-1072.3
24
CANL
110.0
180.0
772.1
2.15
25
CANH
110.0
180.05
772.1
343.33
26
RS
110.0
180.0
848.1
1140.6
NOTE: Origin of coordinates is the center of the die. NC = No connect
FIGURE A-2. Die bonding pad locations and electrical functions - continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
40
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
Device type 02
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 2413 microns x 3322 microns.
Die thickness: 305 microns  25 microns.
Interface materials.
Top metallization: 300 Å TiN on 2.8 microns AlCu
In bond pads, TiN has been removed.
Backside metallization: Silicon
Glassivation.
Type: 12 kÅ silicon nitride on 3 kÅ oxide
Substrate: P6SOI: Bonded wafer dielectrically isolated BiCMOS.
Assembly related information.
Substrate potential: Floating
Special assembly instructions: Tie GND (pad 11) and GND_ESD (pad 12) both together and to GND.
Tie VCC (pad 13) and VCC_VREF (pad 14) both together and to VCC.
All pads identified as NC shall not be connected and shall remain floating.
FIGURE A-2. Die bonding pad locations and electrical functions – continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
41
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
Device type 03
FIGURE A-3. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
42
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
Device type 03
Die layout X - Y coordinates
Pad number
Pad name
X (µm)
Y (µm)
X
Y
1
NC
90.0
90.0
901.4
1365.6
2
NC
90.0
90.0
767.4
1365.6
3
NC
90.0
90.0
-183.23
1365.6
4
NC
90.0
90.0
-333.25
1365.6
5
NC
90.0
90.0
-483.25
1365.6
6
NC
90.0
90.0
-633.25
1365.6
7
NC
90.0
90.0
-783.25
1365.6
8
NC
90.0
90.0
-933.25
1365.6
9
D
110.0
110.0
-931.1
901.85
10
GND_LSPD
110.0
110.0
-931.1
563.25
11
GND
110.0
180.0
-931.1
342.25
12
GND_ESD
110.0
110.05
-931.1
119.42
13
VCC
110.0
180.0
-931.1
-115.05
14
VCC_VREF
110.0
180.05
-931.1
-371.08
15
R
110.0
180.0
-931.1
-1350.0
16
NC
90.0
90.0
-711.1
-1394.95
17
NC
90.0
90.0
-561.1
-1394.95
18
NC
90.0
90.0
-411.1
-1394.95
19
NC
90.0
90.0
-261.1
-1394.95
20
NC
90.0
90.0
-111.1
-1394.95
21
NC
90.0
90.0
38.9
-1394.95
22
NC
110.0
110.0
756.9
-1307.3
23
VREF
110.0
180.0
775.3
-1072.3
24
CANL
110.0
180.0
772.1
2.15
25
CANH
110.0
180.05
772.1
343.33
26
RS
110.0
180.0
848.1
1140.6
NOTE: Origin of coordinates is the center of the die. NC = No connect
FIGURE A-3. Die bonding pad locations and electrical functions - continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
43
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-15228
Device type 03
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 2413 microns x 3322 microns.
Die thickness: 305 microns  25 microns.
Interface materials.
Top metallization: 300 Å TiN on 2.8 microns AlCu
In bond pads, TiN has been removed.
Backside metallization: Silicon
Glassivation.
Type: 12 kÅ silicon nitride on 3 kÅ oxide
Substrate: P6SOI: Bonded wafer dielectrically isolated BiCMOS.
Assembly related information.
Substrate potential: Floating
Special assembly instructions: Tie GND_LPSD (pad 10) and GND (pad 11) and GND_ESD (pad 12) all together
and to GND.
Tie VCC (pad 13) and VCC_VREF (pad 14) both together and to VCC.
All pads identified as NC shall not be connected and shall remain floating.
FIGURE A-3. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-15228
A
REVISION LEVEL
A
SHEET
44
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 16-04-05
Approved sources of supply for SMD 5962-15228 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962L1522801VXC
34371
ISL72026SEHVF
5962L1522801V9A
34371
ISL72026SEHVX
5962L1522802VXC
34371
ISL72027SEHVF
5962L1522802V9A
34371
ISL72027SEHVX
5962L1522803VXC
34371
ISL72028SEHVF
5962L1522803V9A
34371
ISL72028SEHVX
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1650 Robert J. Conlan Blvd. NE
Palm Bay, FL 32905-3406
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.