isl7202xseh eldrs test report

Test Report 022
Total Dose Testing of the ISL72026SEH, ISL72027SEH
and ISL72028SEH CAN Transceivers
Introduction
The individual part descriptions are as follows:
This report provides results of a total ionizing dose (TID) test of
the ISL72026SEH, ISL72027SEH and ISL72028SEH Controller
Area Network (CAN) transceivers. The test was conducted in
order to determine the sensitivity of the parts to the total dose
environment. Irradiations were performed to 75krad(Si) at
0.01rad(Si)/s under biased and grounded conditions and were
followed by a biased anneal at +100°C for 168 hours. No
rejects to the SMD parametric limits were encountered.
Reference Documents
1. ISL72026SEH: CAN transceiver, 1Mbps, listen mode,
loopback
2. ISL72027SEH: CAN transceiver, 1Mbps, listen mode, split
termination output
3. ISL72028SEH: CAN transceiver, 1Mbps, low power
shutdown, split termination output
The reader is referred to the relevant Intersil datasheet and
other on-line information for further detail on the CAN protocol.
Figures 1, 2 and 3 supply functional diagrams for all three
variants, while Table 1 shows their pin assignments.
• MIL-STD-883 test method 1019
• ISL72026SEH datasheet
Tx DATA IN
• ISL72027SEH datasheet
RS 8
CANH 7
2 GND
ISL72026SEH
CANL 6
3 VCC
• ISL72028SEH datasheet
• DLA Land and Maritime Standard Microcircuit Drawing
(SMD) 5962-15228
1 D
VCC
0.1µF
4 R
µController
The Intersil ISL7202xSEH product family consists of the
ISL72026SEH, ISL72027SEH and ISL72028SEH, which differ
in functionality as outlined in the following. These parts are
3.3V radiation tolerant Controller Area Network (CAN)
transceivers that are compatible with the ISO11898-2
standard. Applications include serial communication in
satellites and aerospace communications and telemetry data
processing in harsh industrial environments. The transceiver
can transmit and receive at bus speeds of up to 1Mbps. The
devices are designed to operate over a common-mode range
of -7V to +12V with a maximum of 120 nodes. The device has
three discrete selectable driver rise/fall time options, a listen
mode feature and a split termination output. The Receiver (RX)
inputs feature a “full fail-safe” design, which ensures a logic
high receiver output if the RX inputs are floating, shorted, or
terminated but not driven. The ISL72027SEH is available in an
8 Ld hermetic ceramic flatpack and die form and operates
over the -55°C to +125°C temperature range. The logic inputs
are compatible with 5V systems as well as with 3.3V systems.
The three parts use the same die and the specific functionality
is selected by wire bonding diagram.
The use of redundant bus transceivers is common in high
reliability systems. In this arrangement, both active and
quiescent devices can be present simultaneously on the bus
with the quiescent devices powered down as cold spares. To
support cold sparing, the powered-down ISL7202xSEH
transceiver (VCC < 200mV) has a resistance between the VREF
pin or the CANH pin or CANL pin and the VCC supply rail of
>480kΩ (max) with a typical resistance of >2MΩ. The
resistance between CANH and CANL of a powered down
transceiver has a typical resistance of 80kΩ.
1
CANL
LBK 5
Part Description
November 10, 2015
TR022.0
CANH
Rx DATA OUT
FIGURE 1. ISL72026SEH FUNCTIONAL DIAGRAM
Tx DATA IN
1 D
RS 8
CANH 7
2 GND
ISL72027SEH
CANL 6
3 VCC
VCC
0.1µF
4 R
CANH
CANL
VREF 5
Rx DATA OUT
FIGURE 2. ISL72027SEH FUNCTIONAL DIAGRAM
Tx DATA IN
1 D
RS 8
CANH 7
2 GND
ISL72028SEH
CANL 6
3 VCC
VCC
CANH
CANL
0.1µF
4 R
VREF 5
Rx DATA OUT
FIGURE 3. ISL72028SEH FUNCTIONAL DIAGRAM
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
Test Report 022
Test Description
TABLE 1. ISL72026SEH, ISL72027SEH AND ISL72028SEH PINOUTS
ISL72026SEH
ISL72027SEH
PIN NUMBER
ISL72028SEH
Irradiation Facilities
PIN NAME
Irradiations were performed using a Hopewell Designs N40
panoramic low dose rate 60Co irradiator located in the Palm Bay,
Florida Intersil facility. The dose rate was 0.0089rad(Si)/s
(8.9mrad(Si)/s), in accordance with MIL-STD-883 Method 1019.
The irradiations used a PbAl spectrum hardening filter to shield the
test board and devices under test against low energy secondary
gamma radiation.
1
D
D
D
2
GND
GND
GND
3
VCC
VCC
VCC
4
R
R
R
5
LBK
VREF
VREF
6
CANL
CANL
CANL
7
CANH
CANH
CANH
8
RS
RS
RS
Package lid
Tied internally to Tied internally to Tied internally to
pin 2 (GND)
pin 2 (GND)
pin 2 (GND)
Test Fixturing
Figure 4 shows the configuration and power supply sequencing
used for biased irradiation.
ISL72026SEH, ISL72027SEH, ISL72028SHE and ISL7202xSEH
Radiation Schematic
TP4
TP3
DUT
1
2
VCC
3
UNNAMED_1_BANANAJACK_I328_IN1
D
RS
GND
CANH
VCC
CANL
UNNAMED_1_FP8_I401_PIN4
R
LBK/
VREF
8
UNNAMED_1_FP8_I401_PIN8
7
UNNAMED_1_FP8_I401_PIN7
6
UNNAMED_1_FP8_I401_PIN6
5
(14)
R2
(13)
(12)
R3
(11)
R4
C1
R1
4
UNNAMED_1_FP8_I401_PIN1
TP2
TP1
GND
POWER ON - ONE SUPPLY VOLTAGE
VCC = 3.6V, +0.25V -0.0V
FIGURE 4. IRRADIATION BIAS CONFIGURATION AND POWER SUPPLY SEQUENCING FOR THE ISL7202xSEH
Submit Document Feedback
2
TR022.0
November 10, 2015
Test Report 022
Characterization Equipment and Procedures
Downpoints
All electrical testing was performed outside the irradiator using
production Automated Test Equipment (ATE) with datalogging of
all parameters at each downpoint. All downpoint electrical
testing was performed at room temperature.
Downpoints were zero, 10 krad(Si), 30 krad(Si), 50 krad(Si) and
75 krad(Si). The samples were subjected to a high temperature
biased anneal for 168 hours at +100°C following irradiation.
Results
Experimental Matrix
Attributes Data
Testing proceeded in accordance with the guidelines of MIL-STD-883
Test Method 1019. The experimental matrix consisted of twelve
samples irradiated under bias and twelve samples irradiated with all
pins grounded for each of the three part types. Three control units
were used.
Testing at low dose rate of the ISL72026SEH, ISL72027SEH and
ISL72028SEH is complete and showed no reject devices after
irradiation or anneal. Table 2 summarizes the results.
Samples of the ISL72026SEH, ISL72027SEH and ISL72028SEH
were drawn from development lot J676671.1, wafer 02C1 and
were packaged in the production hermetic 8-pin ceramic
flatpack, package code KCR. The samples were processed
through the standard burn-in cycle and were screened to SMD
5962-15228 limits at room, low and high temperatures before
irradiation.
TABLE 2. ISL72026SEH, ISL72027SEH AND ISL72028SEH LOW DOSE RATE TOTAL DOSE TEST ATTRIBUTES DATA
PART
RATE
BIAS
SAMPLE
SIZE
DOWNPOINT
BIN 1
(Note 1)
ISL72026SEH
0.0089rad(Si)/s
Figure 4
12
Pre-irradiation
12
10krad(Si)
12
0
30krad(Si)
12
0
50krad(Si)
12
0
75krad(Si)
12
0
Anneal, 168 hours at +100°C
12
0
Pre-irradiation
12
10krad(Si)
12
0
30krad(Si)
12
0
50krad(Si)
12
0
75krad(Si)
12
0
Anneal, 168 hours at +100°C
12
0
Pre-irradiation
12
10krad(Si)
12
0
30krad(Si)
12
0
50krad(Si)
12
0
75 krad(Si)
12
0
Anneal, 168 hours at +100°C
12
0
Pre-irradiation
12
10krad(Si)
12
0
30krad(Si)
12
0
50krad(Si)
12
0
75krad(Si)
12
0
Anneal, 168 hours at +100°C
12
0
ISL72026SEH
ISL72027SEH
ISL72027SEH
Submit Document Feedback
0.0089rad(Si)/s
0.0089rad(Si)/s
0.0089rad(Si)/s
3
Grounded
Figure 4
Grounded
12
12
12
REJECTS
TR022.0
November 10, 2015
Test Report 022
TABLE 2. ISL72026SEH, ISL72027SEH AND ISL72028SEH LOW DOSE RATE TOTAL DOSE TEST ATTRIBUTES DATA
PART
RATE
BIAS
SAMPLE
SIZE
DOWNPOINT
BIN 1
(Note 1)
ISL72028SEH
0.0089rad(Si)/s
Figure 4
12
Pre-irradiation
12
10krad(Si)
12
0
30krad(Si)
12
0
50krad(Si)
12
0
75krad(Si)
10 (Note 2)
0
Anneal, 168 hours at +100°C
10 (Note 2)
0
Pre-irradiation
12
10krad(Si)
12
0
30krad(Si)
12
0
50krad(Si)
12
0
75krad(Si)
10 (Note 2)
0
Anneal, 168 hours at +100°C
10 (Note 2)
0
ISL72028SEH
0.0089rad(Si)/s
Grounded
12
REJECTS
NOTES:
1. Bin 1 indicates a device that passes all pre-irradiation specification limits.
2. Two samples were removed from the ISL72028SEH biased and grounded populations due to fixture capacity constraints, reducing the sample sizes
to 10 each for the 75krad(Si) and anneal downpoints.
Submit Document Feedback
4
TR022.0
November 10, 2015
Test Report 022
Variables Data
Figure 16: ISL72026SEH and ISL72027SEH, input hysteresis
voltage in listen mode.
The plots in Figures 5 through 43 show data at all downpoints.
The plots show the average of key parameters as a function of
total dose for each of the two irradiation conditions. Most of the
plots show a number of parameters on the same set of axes in
an attempt to manage the length of this report. All data shown
was taken at a supply voltage of 3.0V; the 3.6V supply data
showed similar stability and is not plotted. The figure sequence
and the symbols of the reported parameters are consistent with
those used in the SMD. All parameters showed excellent stability
over irradiation. See “Conclusion” on page 25. for further
discussion.
Figure 24: ISL72026SEH and ISL72027SEH, supply current in
listen mode.
Figure 25: ISL72028SEH, supply current in low power shutdown
mode.
Figure 30: ISL72027SEH and ISL72028SEH, VREF cold sparing
leakage current.
Figure 40: ISL72026SEH, loopback delay, input to receiver
output.
Figure 41: ISL72027SEH and ISL72028SEH, VREF pin voltage,
5µA sourcing and sinking.
Note also that nearly all of the figures show the TID response of
several variants, which generally led to busy plots. Most of the
figures report data for all three variants on the same set of axes;
the eight figures reporting one or two variants are listed in the
following for reference.
Figure 42: ISL72027SEH and ISL72028SEH, VREF pin voltage,
50µA sourcing and sinking.
Figure 15: ISL72026SEH and ISL72027SEH, input threshold
voltage in listen mode.
Variables Data Plots
3.5
ISL72026 Vo(dom), CANH, grounde d
ISL72026 Vo(dom), CANH, biased
Bus output voltage, dominant, V
3
ISL72027 Vo(dom), CANH, grounde d
ISL72027 Vo(dom), CANH, biased
ISL72028 Vo(dom), CANH, grounde d
2.5
ISL72028 Vo(dom), CANH, biased
ISL72026 Vo(dom), CANL, grounde d
2
ISL72026 Vo(dom), CANL, biased
ISL72027 Vo(dom), CANL, grounde d
1.5
ISL72027 Vo(dom), CANL, biased
ISL72028 Vo(dom), CANL, grounde d
1
ISL72028 Vo(dom), CANL, biased
Spec limit, CANH
Spec limit, CANH
0.5
Spec limit, CANL
Spec limit, CANL
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01r ad(Si)/s
FIGURE 5. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter dominant bus output voltage (VO(DOM)) for 3.0V supply, D = 0V, RS = 0V
and CAN HIGH and LOW as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases.
The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 2.25V to
3.0V (CAN High) and 0.1V to 1.25V (CAN Low).
Submit Document Feedback
5
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
3
ISL72026 Vo(rec), CANH, grounded
ISL72026 Vo(rec), CANH, biased
ISL72027 Vo(rec), CANH, grounded
Bus output voltage, recessive (V)
ISL72027 Vo(rec), CANH, biased
ISL72028 Vo(rec), CANH, grounded
2.5
ISL72028 Vo(rec), CANH, biased
ISL72026 Vo(rec), CANL, grounded
ISL72026 Vo(rec), CANL, biased
ISL72027 Vo(rec), CANL, grounded
ISL72027 Vo(rec), CANL, biased
2
ISL72028 Vo(rec), CANL, grounded
ISL72028 Vo(rec), CANL, biased
Spec limit, CANH and CANL
Spec limit, CANH
Spec limit, CANL
1.5
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 6. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter recessive bus output voltage (VO(REC)) for 3.0V supply, D = 3.0V, RS = 0V
and CAN HIGH and LOW as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases.
The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 1.8V to
2.7V (CAN High and CAN Low).
3.5
ISL7202 6 Vod(dom ), grounded
ISL7202 6 Vod(dom ), biase d
Diff. output voltage, dominant, V
3
ISL7202 7 Vod(dom ), grounded
ISL7202 7 Vod(dom ), biase d
2.5
ISL7202 8 Vod(dom ), grounded
ISL7202 8 Vod(dom ), biase d
Spec lim it, V od(dom )
2
Spec lim it, V od(dom )
1.5
1
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 7. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter dominant output differential voltage (VOD(DOM)) for 3.0V supply, D = 0V
and RS = 0V as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose
rate was 0.0089 rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 1.5V to 3.0V.
Submit Document Feedback
6
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
20
ISL720 26 Vod(re c), ground ed
ISL720 26 Vod(re c), biased
ISL720 27 Vod(re c), ground ed
Diff. output voltage, recessive, mV
-20
ISL720 27 Vod(re c), biased
ISL720 28 Vod(re c), ground ed
ISL720 28 Vod(re c), biased
-60
Spe c limit, Vod(re c)
Spe c limit, Vod(re c)
-100
-140
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 8. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter recessive output differential voltage (VOD(REC)) for 3.0V supply, D = 0V
and RS = 0V as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose
rate was 0.0089rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are -120.0mV to
12.0mV.
40
ISL720 26 IIL, gro unded
ISL720 26 IIL, bia sed
ISL720 27 IIL, gro unded
Input HIGH and LOW current, uA
20
ISL720 27 IIL, bia sed
ISL720 28 IIL, gro unded
ISL720 28 IIL, bia sed
ISL720 26 IIH, groun ded
0
ISL720 26 IIH, biased
ISL720 27 IIH, groun ded
ISL720 27 IIH, biased
-20
ISL720 28 IIH, groun ded
ISL720 28 IIH, biased
Spe c limit
Spe c limit
-40
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 9. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter D input HIGH (2.0VIN) and LOW (0.8VIN) input current (IIH and IIL) as a
function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was
0.0089rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are -30.0µA to 30.0µA.
Submit Document Feedback
7
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
300
ISL720 26 Isc, CA NH, g rounde d
ISL720 26 Isc, CA NH, b iase d
200
ISL720 27 Isc, CA NH, g rounde d
Output short-circuit current, mA
ISL720 27 Isc, CA NH, b iase d
CANL = +12V
ISL720 28 Isc, CA NH, g rounde d
100
ISL720 28 Isc, CA NH, b iase d
ISL720 26 Isc, CA NL , groun ded
0
ISL720 26 Isc, CA NL , biased
ISL720 27 Isc, CA NL , groun ded
-100
ISL720 27 Isc, CA NL , biased
CANH = -7V
ISL720 28 Isc, CA NL , groun ded
ISL720 28 Isc, CA NL , biased
-200
Spe c limi t, CA N high
Spe c limi t, CA N low
-300
0
25
50
75
100
ANNEAL
Total dose, krad(Si) a t 0.01rad(Si)/s
FIGURE 10. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter output short-circuit current (ISC), VCANH = -7V and VCANL open and VCANL
= 12V and VCANH open, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases.
The dose rate was 0.0089rad(Si)/s, and the sample size for each of the six cells was 12.
The post-irradiation SMD limits are -250.0mA (VCANH = -7V) and +250mA (VCANH = 12V).
1.5
ISL72 0 26 Isc, CA NH, g rounde d
ISL72 0 26 Isc, CA NH, b iase d
Output short-circuit current, mA
1
ISL72 0 27 Isc, CA NH, g rounde d
ISL72 0 27 Isc, CA NH, b iase d
CANH = +12V
0.5
ISL72 0 28 Isc, CA NH, g rounde d
ISL72 0 28 Isc, CA NH, b iase d
ISL72 0 26 Isc, CA NL , groun ded
0
ISL72 0 26 Isc, CA NL , biased
ISL72 0 27 Isc, CA NL , groun ded
-0.5
ISL72 0 27 Isc, CA NL , biased
CANL = -7V
ISL72 0 28 Isc, CA NL , groun ded
ISL72 0 28 Isc, CA NL , biased
-1
Spe c limit, CA N high
Spe c limit, CA N low
-1.5
0
25
50
75
100
ANNEAL
Total dose , krad(Si) at 0.01rad(Si)/s
FIGURE 11. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter output short-circuit current (ISC), VCANH = 12V and VCANL open and
VCANL = -7V and VCANH open, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded)
cases. The dose rate was 0.0089rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are
1.0mA (VCANH = 12V) and -1.0mA (VCANH = -7V).
Submit Document Feedback
8
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
100 0
ISL720 26 VTH(R), g rounde d
ISL720 26 VTH(R), b iased
900
ISL720 27 VTH(R), g rounde d
Input threshold voltage, mV
ISL720 27 VTH(R), b iased
ISL720 28 VTH(R), g rounde d
800
Rising
ISL720 28 VTH(R), b iased
ISL720 26 VTH(F), g rounde d
700
ISL720 26 VTH(F), b iase d
ISL720 27 VTH(F), g rounde d
Falling
600
ISL720 27 VTH(F), b iase d
ISL720 28 VTH(F), g rounde d
ISL720 28 VTH(F), b iase d
500
Spe c limit
Spe c limit
400
0
25
50
75
100
ANNEAL
Total dose, krad(Si) a t 0.01rad(Si)/s
FIGURE 12. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver rising (recessive to dominant) and falling (dominant to recessive) input
threshold voltage (V THR and V THF) as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins
grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD
limits are 900mV maximum (rising) and 500mV minimum (falling).
100
ISL720 26 V(hys) , groun ded
Input hysteresis voltage, mV
90
ISL720 26 V(hys) , biased
ISL720 27 V(hys) , groun ded
80
ISL720 27 V(hys) , biased
70
ISL720 28 V(hys) , groun ded
ISL720 28 V(hys) , biased
60
Spe c limit
50
40
30
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 13. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver input hysteresis (VHYS = V THR - V THF) as a function of low dose rate
irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample
size for each of the six cells was 12. The post-irradiation SMD limit is 40mV minimum.
Submit Document Feedback
9
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
120 0
ISL720 26 listen VTH(R) , groun ded
ISL720 26 listen VTH(R) , biased
ISL720 27 listen VTH(R) , groun ded
Input threshold, listen mode, mV
100 0
ISL720 27 listen VTH(R) , biased
Rising
ISL720 26 listen VTH(F) , groun ded
800
ISL720 26 listen VTH(F) , biased
Falling
ISL720 27 listen VTH(F) , groun ded
ISL720 27 listen VTH(F) , biased
600
Spe c limit, risi ng, maximum
Spe c limit, fal ling, minimum
400
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 14. ISL72026SEH and ISL72027SEH receiver listen mode rising (recessive to dominant) and falling (dominant to recessive) input
threshold voltage (V THRLM and V THFLM) as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins
grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD
limits are 1150mV maximum (rising) and 525mV minimum (falling).
Input hysteresis, listen mode, mV
120
100
ISL72026 list en V(hys) , grounded
ISL72026 list en V(hys) , biase d
80
ISL72027 list en V(hys) , grounded
ISL72027 list en V(hys) , biase d
60
Spec limit
40
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 15. ISL72026SEH and ISL72027SEH receiver listen mode input hysteresis (V THRLM - V THFLM) as a function of low dose rate irradiation for
the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s, and the sample size for each of
the six cells was 12. The post-irradiation SMD limit is 50mV minimum.
Submit Document Feedback
10
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
3
ISL720 26 VOL, g round ed
ISL720 26 VOL, b iased
ISL720 27 VOL, g round ed
Receiver output voltage, H and L, V
ISL720 27 VOL, b iased
ISL720 28 VOL, g round ed
2
ISL720 28 VOL, b iased
ISL720 26 VOH, grou nded
ISL720 26 VOH, biased
ISL720 27 VOH, grou nded
1
ISL720 27 VOH, biased
ISL720 28 VOH, grou nded
ISL720 28 VOH, biased
Spe c limit
Spe c limit
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(S i)/s
FIGURE 16. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver output High and Low voltage, IOUT = -4mA (VOH) and IOUT= 4mA (VOL), as a
function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was
0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 2.4V minimum (VOH) and
0.4V maximum (VOL).
550
ISL720 26 ICAN, CANH, 12V, g r ound ed
ISL720 26 ICAN, CANH, 12V, b ia sed
CANH/L at 12V
ISL720 27 ICAN, CANH, 12V, g r ound ed
CAN input current, uA
500
ISL720 27 ICAN, CANH, 12V, b ia sed
ISL720 28 ICAN, CANH, 12V, g r ound ed
450
ISL720 28 ICAN, CANH, 12V, b ia sed
ISL720 26 ICAN, CANL, 12 V, gro u nded
ISL720 26 ICAN, CANL, 12 V, bia sed
400
ISL720 27 ICAN, CANL, 12 V, gro u nded
ISL720 27 ICAN, CANL, 12 V, bia sed
350
ISL720 28 ICAN, CANL, 12 V, gro u nded
ISL720 28 ICAN, CANL, 12 V, bia sed
Spe c limit
300
0
25
50
75
ANNEAL
100
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 17. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver CAN bus input current (ICAN), CANH or CANL at 12V, D = 3V, LBK = RS = 0V,
as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was
0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 500µA maximum.
Submit Document Feedback
11
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
300
ISL720 26 ICAN, CANH, 12 V, g round ed
ISL720 26 ICAN, CANH, 12 V, b iased
CANH/L at 12, VCC = 0
ISL720 27 ICAN, CANH, 12 V, g round ed
CAN input current, uA
250
ISL720 27 ICAN, CANH, 12 V, b iased
ISL720 28 ICAN, CANH, 12 V, g round ed
ISL720 28 ICAN, CANH, 12 V, b iased
ISL720 26 ICAN, CANL, 12 V, grou nded
200
ISL720 26 ICAN, CANL, 12 V, biased
ISL720 27 ICAN, CANL, 12 V, grou nded
ISL720 27 ICAN, CANL, 12 V, biased
150
ISL720 28 ICAN, CANL, 12 V, grou nded
ISL720 28 ICAN, CANL, 12 V, biased
Spe c limit, CA N high
100
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 18. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver CAN bus input current (ICAN), CANH or CANL at 12V, D = 3V, VCC = RS = 0V,
as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was
0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 250µA maximum.
-250
ISL72026 I CAN, CANH, -7 V, grounded
ISL72026 I CAN, CANH, -7 V, bias ed
ISL72027 I CAN, CANH, -7 V, grounded
ISL72027 I CAN, CANH, -7 V, bias ed
CAN input current, uA
-300
ISL72028 I CAN, CANH, -7 V, grounded
ISL72028 I CAN, CANH, -7 V, bias ed
ISL72026 I CAN, CANL, -7V , grounded
-350
ISL72026 I CAN, CANL, -7V , bias ed
ISL72027 I CAN, CANL, -7V , grounded
ISL72027 I CAN, CANL, -7V , bias ed
-400
CANH/L at ‐7V
ISL72028 I CAN, CANL, -7V , grounded
ISL72028 I CAN, CANL, -7V , bias ed
Spec limit, CAN high
-450
0
25
50
75
100
ANNE
AL
Total dose, krad(Si) at 0.0 1rad(Si)/s
FIGURE 19. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver CAN bus input current (ICAN), CANH or CANL at -7V, D = 3V, LBK = RS = 0V, as
a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was
0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is -400µA minimum
Submit Document Feedback
12
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
-60
ISL72026 ICAN , CANH, ‐7V, grounded
ISL72026 ICAN , CANH, ‐7V, bi ased
ISL72027 ICAN , CANH, ‐7V, grounded
-80
CAN input current, uA
ISL72027 ICAN , CANH, ‐7V, bi ased
ISL72028 ICAN , CANH, ‐7V, grounded
-100
ISL72028 ICAN , CANH, ‐7V, bi ased
ISL72026 ICAN , CANL, ‐7V, grounded
ISL72026 ICAN , CANL, ‐7V, biased
-120
ISL72027 ICAN , CANL, ‐7V, grounded
ISL72027 ICAN , CANL, ‐7V, biased
-140
ISL72028 ICAN , CANL, ‐7V, grounded
CANH/L at -7V, VCC = 0
ISL72028 ICAN , CANL, ‐7V, biased
Spec limit, CAN high
-160
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 20. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver CAN bus input current (ICAN), CANH or CANL at -7V, D = 3V, VCC = RS = 0V, as
a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was
0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is -150µA minimum.
60
IS L72026 Ri n, CANH, grounded
IS L72026 Ri n, CANH, bi ased
IS L72027 Ri n, CANH, grounded
50
Input resistance, kohms
IS L72027 Ri n, CANH, bi ased
IS L72028 Ri n, CANH, grounded
IS L72028 Ri n, CANH, bi ased
40
IS L72026 Ri n, CANL, grounded
IS L72026 Ri n, CANL, biased
30
IS L72027 Ri n, CANL, grounded
IS L72027 Ri n, CANL, biased
IS L72028 Ri n, CANL, grounded
20
IS L72028 Ri n, CANL, biased
Spec limit
Spec limit
10
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 21. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver input resistance (RIN), input to ground, D = 3V, LBK = RS = 0V, as a function
of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089 rad(Si)/s,
and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 20kΩ to 50kΩ.
Submit Document Feedback
13
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
120
ISL720 26 Rin (dif), grou nded
ISL720 26 Rin (dif), biased
Differential input resistance, kohms
100
ISL720 27 Rin (dif), grou nded
ISL720 27 Rin (dif), biased
ISL720 28 Rin (dif), grou nded
80
ISL720 28 Rin (dif), biased
Spe c limit
60
Spe c limit
40
20
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 22. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver differential input resistance (RIND), input to input, D = 3V, LBK = RS = 0V, as
a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was
0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 40kΩ to 100kΩ.
2.5
ISL720 26 ICC(L), gr ounde d
ISL720 26 ICC(L), bi ase d
Supply current, listen mode, mA
2
ISL720 27 ICC(L), gr ounde d
1.5
ISL720 27 ICC(L), bi ase d
Spe c limit
1
0.5
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 23. ISL72026SEH and ISL72027SEH supply current in Listen mode (ICC(L)), RS = D = VCC, as a function of low dose rate irradiation for the
biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the
six cells was 12. The post-irradiation SMD limit is 2.0mA maximum.
Submit Document Feedback
14
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
60
Supply current, shutdown mode, uA
ISL720 28 ICC(L), gr ounde d
ISL720 28 ICC(L), bi ase d
40
Spe c limit
20
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 24. ISL72028SEH supply current in low power shutdown mode (ICC(L)), RS = D = VCC, as a function of low dose rate irradiation for the
biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the
six cells was 12. The post-irradiation SMD limit is 50µA maximum.
8
IS L72026 ICC(DOM), grounded
Supply current, dominant, mA
7
IS L72026 ICC(DOM), biased
IS L72027 ICC(DOM), grounded
6
IS L72027 ICC(DOM), biased
5
IS L72028 ICC(DOM), grounded
4
IS L72028 ICC(DOM), biased
Spec limit
3
2
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 25. ISL72026SEH, ISL72027SEH and ISL72028SEH supply current, dominant (ICC(DOM)), RS = D = LBK = 0V, as a function of low dose
rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the
sample size for each of the six cells was 12. The post-irradiation SMD limit is 7.0mA maximum.
Submit Document Feedback
15
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
6
ISL72026 ICC(R EC), grounded
Supply current, recessive, mA
5
ISL72026 ICC(R EC), biased
ISL72027 ICC(R EC), grounded
4
ISL72027 ICC(R EC), biased
3
ISL72028 ICC(R EC), grounded
ISL72028 ICC(R EC), biased
2
Spec limit
1
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 26. ISL72026SEH, ISL72027SEH and ISL72028SEH supply current, recessive (ICC(REC)), RS = LBK = 0V, D = VCC, as a function of low
dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089 rad(Si)/s and the
sample size for each of the six cells was 12. The post-irradiation SMD limit is 5.0mA maximum.
30
ISL720 26 IL(CANH), 12 V, GND
ISL720 26 IL(CANH), 12 V, biased
CANH/ L = +12V
20
ISL720 27 IL(CANH), 12 V, GND
CAN leakage current, uA
ISL720 27 IL(CANH), 12 V, biased
ISL720 28 IL(CANH), 12 V, GND
10
ISL720 28 IL(CANH), 12 V, biased
ISL720 26 IL(CANL), 12V, G ND
0
ISL720 26 IL(CANL), 12V, b iased
ISL720 27 IL(CANL), 12V, G ND
ISL720 27 IL(CANL), 12V, b iased
-10
ISL720 28 IL(CANL), 12V, G ND
ISL720 28 IL(CANL), 12V, b iased
-20
Spe c limit
Spe c limit
-30
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 27. ISL72026SEH, ISL72027SEH and ISL72028SEH cold sparing CANH and CANL leakage current (IL(CANH)) and IL(CANL)), VCC = 0.2V,
RS = 0V, CANH or CANL = 12V, CANL or CANH open, D = VS, as a function of low dose rate irradiation for the biased (per Figure 4) and
unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The
post-irradiation SMD limits are -25µA to 25µA.
Submit Document Feedback
16
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
30
ISL72026 IL(CANH), ‐7V, GND
ISL72026 IL(CANH), ‐7V, biased
CANH/L = -7V
20
ISL72027 IL(CANH), ‐7V, GND
CAN leakage current, uA
ISL72027 IL(CANH), ‐7V, biased
ISL72028 IL(CANH), ‐7V, GND
10
ISL72028 IL(CANH), ‐7V, biased
ISL72026 IL(CANL), ‐7v, GND
0
ISL72026 IL(CANL), ‐7V, biased
ISL72027 IL(CANL), ‐7V, GND
-10
ISL72027 IL(CANL), ‐7V, biased
ISL72028 IL(CANL), ‐7V, GND
ISL72028 IL(CANL), ‐7V, biased
-20
Spec limit
Spec limit
-30
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 28. ISL72026SEH, ISL72027SEH and ISL72028SEH cold sparing CANH and CANL leakage current (IL(CANH)) and IL(CANL)), VCC = 0.2V,
RS = 0V, CANH or CANL = -7V, CANL or CANH open, D = VS, as a function of low dose rate irradiation for the biased (per Figure 4) and
unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The postirradiation SMD limits are -25µA to 25µA.
30
ISL720 27 IL(V RE F) , 12V,
grou nded
ISL720 27 IL(V RE F) , 12V, b iased
20
ISL720 28 IL(V RE F) , 12V,
grou nded
VREF leakage current, uA
ISL720 28 IL(V RE F) , 12V, b iased
10
ISL720 27 IL(V RE F) , -7V,
grou nded
ISL720 27 IL(V RE F) , -7V, b iase d
0
ISL720 28 IL(V RE F) , -7V,
grou nded
ISL720 28 IL(V RE F) , -7V, b iase d
-10
Spe c limit
-20
Spe c limit
-30
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 29. ISL72027SEH and ISL72028SEH cold sparing VREF leakage current (IL(VREF)), VCC = 0.2V, VREF = -7V or 12V, D = VS, as a function of
low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and
the sample size for each of the six cells was 12. The post-irradiation SMD limits are -25µA to 25µA.
Submit Document Feedback
17
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
160 0
ISL720 26 tPDLH1, g round ed
ISL720 26 tPDLH1, b iased
ISL720 27 tPDLH1, g round ed
ISL720 27 tPDLH1, b iased
ISL720 28 tPDLH1, g round ed
Prop delay, LOW to HIGH, ns
120 0
ISL720 28 tPDLH1, b iased
ISL720 26 tPDLH2, g round ed
ISL720 26 tPDLH2, b iased
RS = 50K
ISL720 27 tPDLH2, g round ed
ISL720 27 tPDLH2, b iased
ISL720 28 tPDLH2, g round ed
ISL720 28 tPDLH2, b iased
800
ISL720 26 tPDLH3, g round ed
RS = 10K
ISL720 26 tPDLH3, b iased
ISL720 27 tPDLH3, g round ed
ISL720 27 tPDLH3, b iased
400
ISL720 28 tPDLH3, g round ed
ISL720 28 tPDLH3, b iased
RS = 0V
Spe c limit, RS =0V
Spe c limit, RS =10K
Spe c limit, RS =50K
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 30. ISL72026SEH, ISL72027SEH and ISL72028SEH driver propagation delay, LOW to HIGH, RS = 0V (tPDLH1), RS = 10kΩ (tPDLH2) and
RS = 50kΩ (tPDLH3), as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases.
The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 150ns
maximum (tPDLH1), 850ns maximum (tPDLH2) and 1400ns maximum (tPDLH3).
ISL720 26 tPDHL1, g round ed
ISL720 26 tPDHL1, b iased
ISL720 27 tPDHL1, g round ed
120 0
ISL720 27 tPDHL1, b iased
ISL720 28 tPDHL1, g round ed
Prop delay, HIGH to LOW, ns
ISL720 28 tPDHL1, b iased
ISL720 26 tPDHL2, g round ed
ISL720 26 tPDHL2, b iased
RS = 50K
ISL720 27 tPDHL2, g round ed
800
ISL720 27 tPDHL2, b iased
ISL720 28 tPDHL2, g round ed
ISL720 28 tPDHL2, b iased
ISL720 26 tPDHL3, g round ed
RS = 10K
ISL720 26 tPDHL3, b iased
ISL720 27 tPDHL3, g round ed
400
ISL720 27 tPDHL3, b iased
ISL720 28 tPDHL3, g round ed
ISL720 28 tPDHL3, b iased
RS = 0V
Spe c limit, RS =0V
Spe c limit, RS =10K
Spe c limit, RS =50K
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 31. ISL72026SEH, ISL72027SEH and ISL72028SEH driver propagation delay, HIGH to LOW, RS = 0V (tPDHL1), RS = 10kΩ (tPDHL2) and
RS = 50kΩ (tPDHL3), as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases.
The dose rate was 0.0089rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 155ns
maximum (tPDHL1), 800ns maximum (tPDHL2) and 1300ns maximum (tPDHL3).
Submit Document Feedback
18
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
ISL720 26 tSkew1, g rounde d
ISL720 26 tSkew1, b iased
800
ISL720 27 tSkew1, g rounde d
ISL720 27 tSkew1, b iased
ISL720 28 tSkew1, g rounde d
ISL720 28 tSkew1, b iased
ISL720 26 tSkew2, g rounde d
600
ISL720 26 tSkew2, b iased
Output skew, ns
ISL720 27 tSkew2, g rounde d
ISL720 27 tSkew2, b iased
ISL720 28 tSkew2, g rounde d
ISL720 28 tSkew2, b iased
400
ISL720 26 tSkew3, g rounde d
ISL720 26 tSkew3, b iased
ISL720 27 tSkew3, g rounde d
ISL720 27 tSkew3, b iased
200
ISL720 28 tSkew3, g rounde d
ISL720 28 tSkew3, b iased
Spe c limit, RS =0V
Spe c limit, RS =10K
Spe c limit, RS =50K
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 32. ISL72026SEH, ISL72027SEH and ISL72028SEH driver output skew (tPHL - tPLH), RS = 0V (tSkew1), RS = 10kΩ (tSkew2) and RS = 50kΩ
(tSkew3), as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate
was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 50ns maximum
(tSkew1), 510ns maximum (tSkew2) and 800ns maximum (tSkew3).
ISL720 26 tr1, groun ded
ISL720 26 tr1, biased
ISL720 27 tr1, groun ded
160 0
tr3 limit
Output rise time, ns
120 0
tr2 limit
800
400
tr1,
tr1,
tr1,
tr2,
tr2,
biased
groun ded
biased
groun ded
biased
ISL720 27
ISL720 27
ISL720 28
ISL720 28
tr2,
tr2,
tr2,
tr2,
groun ded
biased
groun ded
biased
ISL720 26
ISL720 26
ISL720 27
ISL720 27
ISL720 28
tr3,
tr3,
tr3,
tr3,
tr3,
groun ded
biased
groun ded
biased
groun ded
ISL720 28 tr3, biased
Spe c limit, tr1
Spe c limit, tr1
Spe c limit, tr2
Spe c limit, tr2
tr1 limit
0
0
ISL720 27
ISL720 28
ISL720 28
ISL720 26
ISL720 26
25
50
75
100
ANNEAL
Spe c limit, tr3
Spe c limit, tr3
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 33. ISL72026SEH, ISL72027SEH and ISL72028SEH driver output rise time, RS = 0V (tr1), RS = 10kΩ (tr2) and RS = 50kΩ (tr3), as a
function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was
0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 20ns to 100ns (tr1), 200ns
to 780ns (tr2) and 400ns to 1400ns (tr3).
Submit Document Feedback
19
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
120 0
ISL720 26 tf1, gro unded
ISL720 26 tf1, bia sed
ISL720 27 tf1, gro unded
tf3 limit
ISL720 27 tf1, bia sed
ISL720 28 tf1, gro unded
ISL720 28 tf1, bia sed
ISL720 26 tf2, gro unded
ISL720 26 tf2, bia sed
ISL720 27 tf2, gro unded
ISL720 27 tf2, bia sed
ISL720 28 tf2, gro unded
ISL720 28 tf2, bia sed
ISL720 26 tf3, gro unded
ISL720 26 tf3, bia sed
ISL720 27 tf3, gro unded
ISL720 27 tf3, bia sed
ISL720 28 tf3, gro unded
ISL720 28 tf3, bia sed
Spe c limit, tf1
Spe c limit, tf1
Output fall time, ns
800
tf2 limit
400
tf1 limit
0
0
25
50
75
100
ANNEAL
Spe c limit,
Spe c limit,
Spe c limit,
Spe c limit,
tf2
tf2
tf3
tf3
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 34. ISL72026SEH, ISL72027SEH and ISL72028SEH driver output fall time, RS = 0V (tf1), RS = 10kΩ (tf2) and RS = 50kΩ (tf3), as a
function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was
0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 10ns to 100ns (tf1), 175ns
to 780ns (tf2) and 300ns to 1400ns (tf3).
160 0
ISL72026 tLO OP1, grounded
ISL72026 tLO OP1, biased
ISL72027 tLO OP1, grounded
ISL72027 tLO OP1, biased
Loop delay, recessive to dominant, ns
ISL72028 tLO OP1, grounded
120 0
ISL72028 tLO OP1, biased
ISL72026 tLO OP2, grounded
ISL72026 tLO OP2, biased
ISL72027 tLO OP2, grounded
ISL72027 tLO OP2, biased
800
ISL72028 tLO OP2, grounded
ISL72028 tLO OP2, biased
ISL72026 tLO OP3, grounded
ISL72026 tLO OP3, biased
ISL72027 tLO OP3, grounded
ISL72027 tLO OP3, biased
400
ISL72028 tLO OP3, grounded
ISL72028 tLO OP3, biased
Spec limit, tL O OP1
Spec limit, tL O OP2
Spec limit, tL O OP3
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 35. ISL72026SEH, ISL72027SEH and ISL72028SEH driver total loop delay t(LOOP1), driver input to receiver output, recessive to dominant,
RS = 0V t(LOOP1), RS = 10kΩ t(LOOP2) and RS = 50kΩ t(LOOP3), as a function of low dose rate irradiation for the biased (per Figure 4)
and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The
post-irradiation SMD limits are 210ns maximum t(LOOP1), 875ns maximum t(LOOP2) and 1400ns maximum t(LOOP3).
Submit Document Feedback
20
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
ISL720 26 tLO OP1, g round ed
Loop delay, dominant to recessive, ns
ISL720 26 tLO OP1, b iased
ISL720 27 tLO OP1, g round ed
120 0
ISL720 27 tLO OP1, b iased
ISL720 28 tLO OP1, g round ed
ISL720 28 tLO OP1, b iased
ISL720 26 tLO OP2, g round ed
ISL720 26 tLO OP2, b iased
ISL720 27 tLO OP2, g round ed
800
ISL720 27 tLO OP2, b iased
ISL720 28 tLO OP2, g round ed
ISL720 28 tLO OP2, b iased
ISL720 26 tLO OP3, g round ed
ISL720 26 tLO OP3, b iased
ISL720 27 tLO OP3, g round ed
400
ISL720 27 tLO OP3, b iased
ISL720 28 tLO OP3, g round ed
ISL720 28 tLO OP3, b iased
Spe c limit, tLO OP1
Spe c limit, tLO OP2
Spe c limit, tLO OP3
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0. 01rad(Si)/s
FIGURE 36. ISL72026SEH, ISL72027SEH and ISL72028SEH driver total loop delay t(LOOP2), driver input to receiver output, dominant to recessive,
RS = 0V t(LOOP1), RS = 10kΩ t(LOOP2) and RS = 50kΩ t(LOOP3), as a function of low dose rate irradiation for the biased (per Figure 4)
and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The
post-irradiation SMD limits are 270ns maximum t(LOOP1), 825ns maximum t(LOOP2) and 1300ns maximum t(LOOP3).
120
ISL720 26 tPL H, ground ed
ISL720 26 tPL H, biased
Receiver propagation delay, ns
100
ISL720 27 tPL H, ground ed
ISL720 27 tPL H, biased
80
ISL720 28 tPL H, ground ed
ISL720 28 tPL H, biased
60
ISL720 26 tPHL, ground ed
ISL720 26 tPHL, biased
ISL720 27 tPHL, ground ed
40
ISL720 27 tPHL, biased
ISL720 28 tPHL, ground ed
20
ISL720 28 tPHL, biased
Spe c limit
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 37. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver propagation delay (tPLH and tPHL), LOW to HIGH and HIGH to LOW, as a
function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was
0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 110ns maximum.
Submit Document Feedback
21
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
40
ISL 720 26 tSK EW, grou nded
ISL 720 26 tSK EW, biased
Receiver output skew, ns
30
ISL 720 27 tSK EW, grou nded
ISL 720 27 tSK EW, biased
ISL 720 28 tSK EW, grou nded
20
ISL 720 28 tSK EW, biased
Sp e c limit
10
0
0
25
50
75
100
ANNEAL
Total dose, krad(S i) at 0.01rad(Si)/s
FIGURE 38. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver skew (tSKEW1 = tPHL - tPLH) as a function of low dose rate irradiation for the
biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the
six cells was 12. The post-irradiation SMD limit is 35ns maximum.
80
ISL720 26 tLP BK(HL), g rounde d
ISL720 26 tLP BK(HL), b iased
60
Loopback delay, ns
ISL720 26 tLP BK(LH), g rounde d
ISL720 26 tLP BK(LH), b iased
40
Spe c limit
20
0
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 39. ISL72026SEH loopback delay (tLBK), IO to receiver output as a function of low dose rate irradiation for the biased (per Figure 4) and
unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The
post-irradiation SMD limit is 75ns maximum.
Submit Document Feedback
22
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
1.7
ISL720 27 VREF, sin kin g, gro u nded
ISL720 27 VREF, sin kin g, bia sed
ISL720 27 VREF, so urci ng, g ro unded
Reference voltage, 5uA, V
1.6
ISL720 27 VREF, so urci ng, b ia sed
ISL720 28 VREF, sin kin g, gro u nded
1.5
ISL720 28 VREF, sin kin g, bia sed
ISL720 28 VREF, so urci ng, g ro unded
ISL720 28 VREF, so urci ng, b ia sed
1.4
Spe c limit
Spe c limit
1.3
0
25
50
75
10 0
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 40. ISL72027SEH and ISL72028SEH reference pin voltage (VREF), 5µA sourcing and sinking, as a function of low dose rate irradiation for
the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of
the six cells was 12. The post-irradiation SMD limits are 1.35V to 1.65V.
1.9
ISL720 27 VREF, sin kin g, grou nded
1.8
ISL720 27 VREF, sin kin g, biased
ISL720 27 VREF, so urci ng, gro unded
Reference voltage, 50uA, V
1.7
ISL720 27 VREF, so urci ng, bia sed
1.6
ISL720 28 VREF, sin kin g, grou nded
1.5
ISL720 28 VREF, sin kin g, biased
1.4
ISL720 28 VREF, so urci ng, gro unded
ISL720 28 VREF, so urci ng, bia sed
1.3
Spe c limit
1.2
Spe c limit
1.1
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 41. ISL72027SEH and ISL72028SEH reference pin voltage (VREF), 50µA sourcing and sinking, as a function of low dose rate irradiation
for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each
of the six cells was 12. The post-irradiation SMD limits are 1.2V to 1.8V.
Submit Document Feedback
23
TR022.0
November 10, 2015
Test Report 022
Variables Data Plots (Continued)
0
ISL720 26 IRSH, gro unded
ISL720 26 IRSH, bia sed
RS current, high speed mode, uA
-100
ISL720 27 IRSH, gro unded
ISL720 27 IRSH, bia sed
-200
ISL720 28 IRSH, gro unded
ISL720 28 IRSH, bia sed
-300
Spe c limit, CA N high
-400
-500
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.0 1rad(Si)/s
FIGURE 42. ISL72026SEH, ISL72027SEH and ISL72028SEH RS input current (IRSH), high speed mode, as a function of low dose rate irradiation
for the biased (perFigure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each
of the six cells was 12. The post-irradiation SMD limit is -450µA minimum.
0
ISL720 26 IRSL, ground ed
ISL720 26 IRSL, biased
-2
RS current, listen mode, uA
ISL720 27 IRSL, ground ed
-4
ISL720 27 IRSL, biased
ISL720 28 IRSL, ground ed
-6
ISL720 28 IRSL, biased
Spe c limit
-8
-10
-12
0
25
50
75
100
ANNEAL
Total dose, krad(Si) at 0.01rad(Si)/s
FIGURE 43. ISL72026SEH, ISL72027SEH and ISL72028SEH RS input current (IRSL), listen mode, as a function of low dose rate irradiation for the
biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the
six cells was 12. The post-irradiation SMD limit is -10µA minimum
Submit Document Feedback
24
TR022.0
November 10, 2015
Test Report 022
Conclusion
This document reports results of a total dose test of the
ISL72026SEH, ISL72027SEH and ISL72028SEH Controller Area
Network (CAN) transceivers. The test was conducted in order to
determine the sensitivity of the parts to the low dose rate total
dose environment found in nearly all space applications. Parts
were tested to 75krad(Si) at low dose rate under biased and
unbiased conditions, as outlined in MIL-STD-883 Test Method
1019, and were then subjected to a high temperature biased
anneal at +100°C for 168 hours.
ATE characterization testing at downpoints showed no rejects to
the SMD Group A parametric limits (indicated by a 'Bin 1'
category) after biased and grounded irradiation at low dose rate
and after the 168 hour +100°C biased anneal. Attributes data is
presented in Table 3, while variables data for selected
parameters is plotted in Figures 5 through 43. No differences
between biased and unbiased irradiation were noted and the
part is not considered bias sensitive.
TABLE 3. REPORTED PARAMETERS
FIGURE
LIMIT LOW
LIMIT HIGH
UNIT
Dominant bus output voltage
2.25
3.0
V
D = 0V
Dominant bus output voltage
0.1
1.25
V
D = 0V
Recessive bus output voltage
1.8
2.7
V
D = 3V
Recessive bus output voltage
1.8
2.8
V
D = 3V
Dominant differential output voltage
1.5
3.0
V
D = 0V
Dominant differential output voltage
1.2
3.0
V
D = 0V
Recessive differential output voltage
-120
12
mV
D = 3V
Recessive differential output voltage
-500
50
mV
D = 3V
Logic HIGH input current
-30
30
µA
D input
Logic LOW input current
-30
30
µA
D input
Output short-circuit current
-250
-
mA
CANH = -7V, CANL open
Output short-circuit current
-
250
mA
CANL = 12V, CANH open
Output short-circuit current
-1.0
-
mA
CANH = 12V, CANL open
Output short-circuit current
-
1.0
mA
CANL = -7V, CANH open
Input threshold voltage, rising
-
900
mV
RS = 0V, 10k and 50k
Input threshold voltage, falling
500
-
mV
RS = 0V, 10k and 50k
13
Input hysteresis voltage
40
-
mV
14
Input threshold voltage, rising, loopback mode
-
1150
mV
RS = 0V, 10k and 50k
Input threshold voltage, falling, loopback mode
525
-
mV
RS = 0V, 10k and 50k
15
Input hysteresis voltage, loopback mode
50
-
mV
16
Receiver output HIGH voltage
2.4
-
V
IOUT = -4mA
Receiver output LOW voltage
-
0.4
V
IOUT = 4mA
17
CAN bus input current
-
500
µA
CANH or CANL = 12V
18
CAN bus input current, supply off
-
250
µA
CANH or CANL = 12V, VCC = 0V
19
CAN bus input current
-400
-
µA
CANH or CANL = -7V
20
CAN bus input current, supply off
-150
-
µA
CANH or CANL = -7V, VCC = 0V
21
Input resistance
20.0
50.0
kΩ
22
Differential input resistance
40.0
100.0
kΩ
23
Supply current, listen mode
-
2.0
mA
24
Supply current, low current shutdown mode
-
50.0
µA
25
Supply current, dominant
-
7.0
mA
5
6
7
8
9
10
11
12
PARAMETER
Submit Document Feedback
25
NOTES
TR022.0
November 10, 2015
Test Report 022
TABLE 3. REPORTED PARAMETERS
FIGURE
PARAMETER
LIMIT LOW
LIMIT HIGH
UNIT
-
5.0
mA
NOTES
26
Supply current, recessive
27
CANH leakage current
-30.0
30.0
µA
28
CANL leakage current
-30.0
30.0
µA
29
VREF leakage current
-30.0
30.0
µA
30
Driver propagation delay, LOW to HIGH
-
150.0
ns
RS = 0V
Driver propagation delay, LOW to HIGH
-
850.0
ns
RS = 10k
Driver propagation delay, LOW to HIGH
-
1400.0
ns
RS = 50k
Driver propagation delay, HIGH to LOW
-
155.0
ns
RS = 0V
Driver propagation delay, HIGH to LOW
-
800.0
ns
RS = 10k
Driver propagation delay, HIGH to LOW
-
1300.0
ns
RS = 50k
Driver output skew
-
50.0
ns
RS = 0V
Driver output skew
-
510.0
ns
RS = 10k
Driver output skew
-
800.0
ns
RS = 50k
Driver output rise time
20.0
100.0
ns
RS = 0V
Driver output rise time
200.0
780.0
ns
RS = 10k
Driver output rise time
400.0
1400.0
ns
RS = 50k
Driver output fall time
10.0
75.0
ns
RS = 0V
Driver output fall time
175.0
500.0
ns
RS = 10k
Driver output fall time
300.0
1000.0
ns
RS = 50k
Total loop delay, dominant to recessive
-
210.0
ns
RS = 0V
Total loop delay, dominant to recessive
-
875.0
ns
RS = 10k
Total loop delay, dominant to recessive
-
1400.0
ns
RS = 50k
Total loop delay, recessive to dominant
-
270.0
ns
RS = 0V
Total loop delay, recessive to dominant
-
825.0
ns
RS = 10k
Total loop delay, recessive to dominant
-
1300.0
ns
RS = 50k
Receiver propagation delay, LOW to HIGH
-
110.0
ns
Receiver propagation delay, HIGH to LOW
-
110.0
ns
38
Receiver skew
-
35.0
ns
39
Loopback delay, IO to receiver output
-
75.0
ns
40
VREF pin voltage
1.35
1.65
V
-5µA to 5µA
41
VREF pin voltage
1.2
1.8
V
-50µA to 50µA
42
RS input current, high speed mode
-450.0
-
µA
43
RS input current, listen mode
-10.0
-
µA
31
32
33
34
35
36
37
NOTES:
3. Limits are taken from Standard Microcircuit Drawing (SMD) 5962-15228.
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the document is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
Submit Document Feedback
26
TR022.0
November 10, 2015