Test Report 022 Total Dose Testing of the ISL72026SEH, ISL72027SEH and ISL72028SEH CAN Transceivers Introduction The individual part descriptions are as follows: This report provides results of a total ionizing dose (TID) test of the ISL72026SEH, ISL72027SEH and ISL72028SEH Controller Area Network (CAN) transceivers. The test was conducted in order to determine the sensitivity of the parts to the total dose environment. Irradiations were performed to 75krad(Si) at 0.01rad(Si)/s under biased and grounded conditions and were followed by a biased anneal at +100°C for 168 hours. No rejects to the SMD parametric limits were encountered. Reference Documents 1. ISL72026SEH: CAN transceiver, 1Mbps, listen mode, loopback 2. ISL72027SEH: CAN transceiver, 1Mbps, listen mode, split termination output 3. ISL72028SEH: CAN transceiver, 1Mbps, low power shutdown, split termination output The reader is referred to the relevant Intersil datasheet and other on-line information for further detail on the CAN protocol. Figures 1, 2 and 3 supply functional diagrams for all three variants, while Table 1 shows their pin assignments. • MIL-STD-883 test method 1019 • ISL72026SEH datasheet Tx DATA IN • ISL72027SEH datasheet RS 8 CANH 7 2 GND ISL72026SEH CANL 6 3 VCC • ISL72028SEH datasheet • DLA Land and Maritime Standard Microcircuit Drawing (SMD) 5962-15228 1 D VCC 0.1µF 4 R µController The Intersil ISL7202xSEH product family consists of the ISL72026SEH, ISL72027SEH and ISL72028SEH, which differ in functionality as outlined in the following. These parts are 3.3V radiation tolerant Controller Area Network (CAN) transceivers that are compatible with the ISO11898-2 standard. Applications include serial communication in satellites and aerospace communications and telemetry data processing in harsh industrial environments. The transceiver can transmit and receive at bus speeds of up to 1Mbps. The devices are designed to operate over a common-mode range of -7V to +12V with a maximum of 120 nodes. The device has three discrete selectable driver rise/fall time options, a listen mode feature and a split termination output. The Receiver (RX) inputs feature a “full fail-safe” design, which ensures a logic high receiver output if the RX inputs are floating, shorted, or terminated but not driven. The ISL72027SEH is available in an 8 Ld hermetic ceramic flatpack and die form and operates over the -55°C to +125°C temperature range. The logic inputs are compatible with 5V systems as well as with 3.3V systems. The three parts use the same die and the specific functionality is selected by wire bonding diagram. The use of redundant bus transceivers is common in high reliability systems. In this arrangement, both active and quiescent devices can be present simultaneously on the bus with the quiescent devices powered down as cold spares. To support cold sparing, the powered-down ISL7202xSEH transceiver (VCC < 200mV) has a resistance between the VREF pin or the CANH pin or CANL pin and the VCC supply rail of >480kΩ (max) with a typical resistance of >2MΩ. The resistance between CANH and CANL of a powered down transceiver has a typical resistance of 80kΩ. 1 CANL LBK 5 Part Description November 10, 2015 TR022.0 CANH Rx DATA OUT FIGURE 1. ISL72026SEH FUNCTIONAL DIAGRAM Tx DATA IN 1 D RS 8 CANH 7 2 GND ISL72027SEH CANL 6 3 VCC VCC 0.1µF 4 R CANH CANL VREF 5 Rx DATA OUT FIGURE 2. ISL72027SEH FUNCTIONAL DIAGRAM Tx DATA IN 1 D RS 8 CANH 7 2 GND ISL72028SEH CANL 6 3 VCC VCC CANH CANL 0.1µF 4 R VREF 5 Rx DATA OUT FIGURE 3. ISL72028SEH FUNCTIONAL DIAGRAM CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. Test Report 022 Test Description TABLE 1. ISL72026SEH, ISL72027SEH AND ISL72028SEH PINOUTS ISL72026SEH ISL72027SEH PIN NUMBER ISL72028SEH Irradiation Facilities PIN NAME Irradiations were performed using a Hopewell Designs N40 panoramic low dose rate 60Co irradiator located in the Palm Bay, Florida Intersil facility. The dose rate was 0.0089rad(Si)/s (8.9mrad(Si)/s), in accordance with MIL-STD-883 Method 1019. The irradiations used a PbAl spectrum hardening filter to shield the test board and devices under test against low energy secondary gamma radiation. 1 D D D 2 GND GND GND 3 VCC VCC VCC 4 R R R 5 LBK VREF VREF 6 CANL CANL CANL 7 CANH CANH CANH 8 RS RS RS Package lid Tied internally to Tied internally to Tied internally to pin 2 (GND) pin 2 (GND) pin 2 (GND) Test Fixturing Figure 4 shows the configuration and power supply sequencing used for biased irradiation. ISL72026SEH, ISL72027SEH, ISL72028SHE and ISL7202xSEH Radiation Schematic TP4 TP3 DUT 1 2 VCC 3 UNNAMED_1_BANANAJACK_I328_IN1 D RS GND CANH VCC CANL UNNAMED_1_FP8_I401_PIN4 R LBK/ VREF 8 UNNAMED_1_FP8_I401_PIN8 7 UNNAMED_1_FP8_I401_PIN7 6 UNNAMED_1_FP8_I401_PIN6 5 (14) R2 (13) (12) R3 (11) R4 C1 R1 4 UNNAMED_1_FP8_I401_PIN1 TP2 TP1 GND POWER ON - ONE SUPPLY VOLTAGE VCC = 3.6V, +0.25V -0.0V FIGURE 4. IRRADIATION BIAS CONFIGURATION AND POWER SUPPLY SEQUENCING FOR THE ISL7202xSEH Submit Document Feedback 2 TR022.0 November 10, 2015 Test Report 022 Characterization Equipment and Procedures Downpoints All electrical testing was performed outside the irradiator using production Automated Test Equipment (ATE) with datalogging of all parameters at each downpoint. All downpoint electrical testing was performed at room temperature. Downpoints were zero, 10 krad(Si), 30 krad(Si), 50 krad(Si) and 75 krad(Si). The samples were subjected to a high temperature biased anneal for 168 hours at +100°C following irradiation. Results Experimental Matrix Attributes Data Testing proceeded in accordance with the guidelines of MIL-STD-883 Test Method 1019. The experimental matrix consisted of twelve samples irradiated under bias and twelve samples irradiated with all pins grounded for each of the three part types. Three control units were used. Testing at low dose rate of the ISL72026SEH, ISL72027SEH and ISL72028SEH is complete and showed no reject devices after irradiation or anneal. Table 2 summarizes the results. Samples of the ISL72026SEH, ISL72027SEH and ISL72028SEH were drawn from development lot J676671.1, wafer 02C1 and were packaged in the production hermetic 8-pin ceramic flatpack, package code KCR. The samples were processed through the standard burn-in cycle and were screened to SMD 5962-15228 limits at room, low and high temperatures before irradiation. TABLE 2. ISL72026SEH, ISL72027SEH AND ISL72028SEH LOW DOSE RATE TOTAL DOSE TEST ATTRIBUTES DATA PART RATE BIAS SAMPLE SIZE DOWNPOINT BIN 1 (Note 1) ISL72026SEH 0.0089rad(Si)/s Figure 4 12 Pre-irradiation 12 10krad(Si) 12 0 30krad(Si) 12 0 50krad(Si) 12 0 75krad(Si) 12 0 Anneal, 168 hours at +100°C 12 0 Pre-irradiation 12 10krad(Si) 12 0 30krad(Si) 12 0 50krad(Si) 12 0 75krad(Si) 12 0 Anneal, 168 hours at +100°C 12 0 Pre-irradiation 12 10krad(Si) 12 0 30krad(Si) 12 0 50krad(Si) 12 0 75 krad(Si) 12 0 Anneal, 168 hours at +100°C 12 0 Pre-irradiation 12 10krad(Si) 12 0 30krad(Si) 12 0 50krad(Si) 12 0 75krad(Si) 12 0 Anneal, 168 hours at +100°C 12 0 ISL72026SEH ISL72027SEH ISL72027SEH Submit Document Feedback 0.0089rad(Si)/s 0.0089rad(Si)/s 0.0089rad(Si)/s 3 Grounded Figure 4 Grounded 12 12 12 REJECTS TR022.0 November 10, 2015 Test Report 022 TABLE 2. ISL72026SEH, ISL72027SEH AND ISL72028SEH LOW DOSE RATE TOTAL DOSE TEST ATTRIBUTES DATA PART RATE BIAS SAMPLE SIZE DOWNPOINT BIN 1 (Note 1) ISL72028SEH 0.0089rad(Si)/s Figure 4 12 Pre-irradiation 12 10krad(Si) 12 0 30krad(Si) 12 0 50krad(Si) 12 0 75krad(Si) 10 (Note 2) 0 Anneal, 168 hours at +100°C 10 (Note 2) 0 Pre-irradiation 12 10krad(Si) 12 0 30krad(Si) 12 0 50krad(Si) 12 0 75krad(Si) 10 (Note 2) 0 Anneal, 168 hours at +100°C 10 (Note 2) 0 ISL72028SEH 0.0089rad(Si)/s Grounded 12 REJECTS NOTES: 1. Bin 1 indicates a device that passes all pre-irradiation specification limits. 2. Two samples were removed from the ISL72028SEH biased and grounded populations due to fixture capacity constraints, reducing the sample sizes to 10 each for the 75krad(Si) and anneal downpoints. Submit Document Feedback 4 TR022.0 November 10, 2015 Test Report 022 Variables Data Figure 16: ISL72026SEH and ISL72027SEH, input hysteresis voltage in listen mode. The plots in Figures 5 through 43 show data at all downpoints. The plots show the average of key parameters as a function of total dose for each of the two irradiation conditions. Most of the plots show a number of parameters on the same set of axes in an attempt to manage the length of this report. All data shown was taken at a supply voltage of 3.0V; the 3.6V supply data showed similar stability and is not plotted. The figure sequence and the symbols of the reported parameters are consistent with those used in the SMD. All parameters showed excellent stability over irradiation. See “Conclusion” on page 25. for further discussion. Figure 24: ISL72026SEH and ISL72027SEH, supply current in listen mode. Figure 25: ISL72028SEH, supply current in low power shutdown mode. Figure 30: ISL72027SEH and ISL72028SEH, VREF cold sparing leakage current. Figure 40: ISL72026SEH, loopback delay, input to receiver output. Figure 41: ISL72027SEH and ISL72028SEH, VREF pin voltage, 5µA sourcing and sinking. Note also that nearly all of the figures show the TID response of several variants, which generally led to busy plots. Most of the figures report data for all three variants on the same set of axes; the eight figures reporting one or two variants are listed in the following for reference. Figure 42: ISL72027SEH and ISL72028SEH, VREF pin voltage, 50µA sourcing and sinking. Figure 15: ISL72026SEH and ISL72027SEH, input threshold voltage in listen mode. Variables Data Plots 3.5 ISL72026 Vo(dom), CANH, grounde d ISL72026 Vo(dom), CANH, biased Bus output voltage, dominant, V 3 ISL72027 Vo(dom), CANH, grounde d ISL72027 Vo(dom), CANH, biased ISL72028 Vo(dom), CANH, grounde d 2.5 ISL72028 Vo(dom), CANH, biased ISL72026 Vo(dom), CANL, grounde d 2 ISL72026 Vo(dom), CANL, biased ISL72027 Vo(dom), CANL, grounde d 1.5 ISL72027 Vo(dom), CANL, biased ISL72028 Vo(dom), CANL, grounde d 1 ISL72028 Vo(dom), CANL, biased Spec limit, CANH Spec limit, CANH 0.5 Spec limit, CANL Spec limit, CANL 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01r ad(Si)/s FIGURE 5. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter dominant bus output voltage (VO(DOM)) for 3.0V supply, D = 0V, RS = 0V and CAN HIGH and LOW as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 2.25V to 3.0V (CAN High) and 0.1V to 1.25V (CAN Low). Submit Document Feedback 5 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 3 ISL72026 Vo(rec), CANH, grounded ISL72026 Vo(rec), CANH, biased ISL72027 Vo(rec), CANH, grounded Bus output voltage, recessive (V) ISL72027 Vo(rec), CANH, biased ISL72028 Vo(rec), CANH, grounded 2.5 ISL72028 Vo(rec), CANH, biased ISL72026 Vo(rec), CANL, grounded ISL72026 Vo(rec), CANL, biased ISL72027 Vo(rec), CANL, grounded ISL72027 Vo(rec), CANL, biased 2 ISL72028 Vo(rec), CANL, grounded ISL72028 Vo(rec), CANL, biased Spec limit, CANH and CANL Spec limit, CANH Spec limit, CANL 1.5 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 6. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter recessive bus output voltage (VO(REC)) for 3.0V supply, D = 3.0V, RS = 0V and CAN HIGH and LOW as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 1.8V to 2.7V (CAN High and CAN Low). 3.5 ISL7202 6 Vod(dom ), grounded ISL7202 6 Vod(dom ), biase d Diff. output voltage, dominant, V 3 ISL7202 7 Vod(dom ), grounded ISL7202 7 Vod(dom ), biase d 2.5 ISL7202 8 Vod(dom ), grounded ISL7202 8 Vod(dom ), biase d Spec lim it, V od(dom ) 2 Spec lim it, V od(dom ) 1.5 1 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 7. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter dominant output differential voltage (VOD(DOM)) for 3.0V supply, D = 0V and RS = 0V as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089 rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 1.5V to 3.0V. Submit Document Feedback 6 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 20 ISL720 26 Vod(re c), ground ed ISL720 26 Vod(re c), biased ISL720 27 Vod(re c), ground ed Diff. output voltage, recessive, mV -20 ISL720 27 Vod(re c), biased ISL720 28 Vod(re c), ground ed ISL720 28 Vod(re c), biased -60 Spe c limit, Vod(re c) Spe c limit, Vod(re c) -100 -140 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 8. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter recessive output differential voltage (VOD(REC)) for 3.0V supply, D = 0V and RS = 0V as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are -120.0mV to 12.0mV. 40 ISL720 26 IIL, gro unded ISL720 26 IIL, bia sed ISL720 27 IIL, gro unded Input HIGH and LOW current, uA 20 ISL720 27 IIL, bia sed ISL720 28 IIL, gro unded ISL720 28 IIL, bia sed ISL720 26 IIH, groun ded 0 ISL720 26 IIH, biased ISL720 27 IIH, groun ded ISL720 27 IIH, biased -20 ISL720 28 IIH, groun ded ISL720 28 IIH, biased Spe c limit Spe c limit -40 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 9. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter D input HIGH (2.0VIN) and LOW (0.8VIN) input current (IIH and IIL) as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are -30.0µA to 30.0µA. Submit Document Feedback 7 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 300 ISL720 26 Isc, CA NH, g rounde d ISL720 26 Isc, CA NH, b iase d 200 ISL720 27 Isc, CA NH, g rounde d Output short-circuit current, mA ISL720 27 Isc, CA NH, b iase d CANL = +12V ISL720 28 Isc, CA NH, g rounde d 100 ISL720 28 Isc, CA NH, b iase d ISL720 26 Isc, CA NL , groun ded 0 ISL720 26 Isc, CA NL , biased ISL720 27 Isc, CA NL , groun ded -100 ISL720 27 Isc, CA NL , biased CANH = -7V ISL720 28 Isc, CA NL , groun ded ISL720 28 Isc, CA NL , biased -200 Spe c limi t, CA N high Spe c limi t, CA N low -300 0 25 50 75 100 ANNEAL Total dose, krad(Si) a t 0.01rad(Si)/s FIGURE 10. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter output short-circuit current (ISC), VCANH = -7V and VCANL open and VCANL = 12V and VCANH open, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are -250.0mA (VCANH = -7V) and +250mA (VCANH = 12V). 1.5 ISL72 0 26 Isc, CA NH, g rounde d ISL72 0 26 Isc, CA NH, b iase d Output short-circuit current, mA 1 ISL72 0 27 Isc, CA NH, g rounde d ISL72 0 27 Isc, CA NH, b iase d CANH = +12V 0.5 ISL72 0 28 Isc, CA NH, g rounde d ISL72 0 28 Isc, CA NH, b iase d ISL72 0 26 Isc, CA NL , groun ded 0 ISL72 0 26 Isc, CA NL , biased ISL72 0 27 Isc, CA NL , groun ded -0.5 ISL72 0 27 Isc, CA NL , biased CANL = -7V ISL72 0 28 Isc, CA NL , groun ded ISL72 0 28 Isc, CA NL , biased -1 Spe c limit, CA N high Spe c limit, CA N low -1.5 0 25 50 75 100 ANNEAL Total dose , krad(Si) at 0.01rad(Si)/s FIGURE 11. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter output short-circuit current (ISC), VCANH = 12V and VCANL open and VCANL = -7V and VCANH open, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 1.0mA (VCANH = 12V) and -1.0mA (VCANH = -7V). Submit Document Feedback 8 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 100 0 ISL720 26 VTH(R), g rounde d ISL720 26 VTH(R), b iased 900 ISL720 27 VTH(R), g rounde d Input threshold voltage, mV ISL720 27 VTH(R), b iased ISL720 28 VTH(R), g rounde d 800 Rising ISL720 28 VTH(R), b iased ISL720 26 VTH(F), g rounde d 700 ISL720 26 VTH(F), b iase d ISL720 27 VTH(F), g rounde d Falling 600 ISL720 27 VTH(F), b iase d ISL720 28 VTH(F), g rounde d ISL720 28 VTH(F), b iase d 500 Spe c limit Spe c limit 400 0 25 50 75 100 ANNEAL Total dose, krad(Si) a t 0.01rad(Si)/s FIGURE 12. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver rising (recessive to dominant) and falling (dominant to recessive) input threshold voltage (V THR and V THF) as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 900mV maximum (rising) and 500mV minimum (falling). 100 ISL720 26 V(hys) , groun ded Input hysteresis voltage, mV 90 ISL720 26 V(hys) , biased ISL720 27 V(hys) , groun ded 80 ISL720 27 V(hys) , biased 70 ISL720 28 V(hys) , groun ded ISL720 28 V(hys) , biased 60 Spe c limit 50 40 30 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 13. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver input hysteresis (VHYS = V THR - V THF) as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 40mV minimum. Submit Document Feedback 9 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 120 0 ISL720 26 listen VTH(R) , groun ded ISL720 26 listen VTH(R) , biased ISL720 27 listen VTH(R) , groun ded Input threshold, listen mode, mV 100 0 ISL720 27 listen VTH(R) , biased Rising ISL720 26 listen VTH(F) , groun ded 800 ISL720 26 listen VTH(F) , biased Falling ISL720 27 listen VTH(F) , groun ded ISL720 27 listen VTH(F) , biased 600 Spe c limit, risi ng, maximum Spe c limit, fal ling, minimum 400 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 14. ISL72026SEH and ISL72027SEH receiver listen mode rising (recessive to dominant) and falling (dominant to recessive) input threshold voltage (V THRLM and V THFLM) as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 1150mV maximum (rising) and 525mV minimum (falling). Input hysteresis, listen mode, mV 120 100 ISL72026 list en V(hys) , grounded ISL72026 list en V(hys) , biase d 80 ISL72027 list en V(hys) , grounded ISL72027 list en V(hys) , biase d 60 Spec limit 40 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 15. ISL72026SEH and ISL72027SEH receiver listen mode input hysteresis (V THRLM - V THFLM) as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 50mV minimum. Submit Document Feedback 10 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 3 ISL720 26 VOL, g round ed ISL720 26 VOL, b iased ISL720 27 VOL, g round ed Receiver output voltage, H and L, V ISL720 27 VOL, b iased ISL720 28 VOL, g round ed 2 ISL720 28 VOL, b iased ISL720 26 VOH, grou nded ISL720 26 VOH, biased ISL720 27 VOH, grou nded 1 ISL720 27 VOH, biased ISL720 28 VOH, grou nded ISL720 28 VOH, biased Spe c limit Spe c limit 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(S i)/s FIGURE 16. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver output High and Low voltage, IOUT = -4mA (VOH) and IOUT= 4mA (VOL), as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 2.4V minimum (VOH) and 0.4V maximum (VOL). 550 ISL720 26 ICAN, CANH, 12V, g r ound ed ISL720 26 ICAN, CANH, 12V, b ia sed CANH/L at 12V ISL720 27 ICAN, CANH, 12V, g r ound ed CAN input current, uA 500 ISL720 27 ICAN, CANH, 12V, b ia sed ISL720 28 ICAN, CANH, 12V, g r ound ed 450 ISL720 28 ICAN, CANH, 12V, b ia sed ISL720 26 ICAN, CANL, 12 V, gro u nded ISL720 26 ICAN, CANL, 12 V, bia sed 400 ISL720 27 ICAN, CANL, 12 V, gro u nded ISL720 27 ICAN, CANL, 12 V, bia sed 350 ISL720 28 ICAN, CANL, 12 V, gro u nded ISL720 28 ICAN, CANL, 12 V, bia sed Spe c limit 300 0 25 50 75 ANNEAL 100 Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 17. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver CAN bus input current (ICAN), CANH or CANL at 12V, D = 3V, LBK = RS = 0V, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 500µA maximum. Submit Document Feedback 11 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 300 ISL720 26 ICAN, CANH, 12 V, g round ed ISL720 26 ICAN, CANH, 12 V, b iased CANH/L at 12, VCC = 0 ISL720 27 ICAN, CANH, 12 V, g round ed CAN input current, uA 250 ISL720 27 ICAN, CANH, 12 V, b iased ISL720 28 ICAN, CANH, 12 V, g round ed ISL720 28 ICAN, CANH, 12 V, b iased ISL720 26 ICAN, CANL, 12 V, grou nded 200 ISL720 26 ICAN, CANL, 12 V, biased ISL720 27 ICAN, CANL, 12 V, grou nded ISL720 27 ICAN, CANL, 12 V, biased 150 ISL720 28 ICAN, CANL, 12 V, grou nded ISL720 28 ICAN, CANL, 12 V, biased Spe c limit, CA N high 100 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 18. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver CAN bus input current (ICAN), CANH or CANL at 12V, D = 3V, VCC = RS = 0V, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 250µA maximum. -250 ISL72026 I CAN, CANH, -7 V, grounded ISL72026 I CAN, CANH, -7 V, bias ed ISL72027 I CAN, CANH, -7 V, grounded ISL72027 I CAN, CANH, -7 V, bias ed CAN input current, uA -300 ISL72028 I CAN, CANH, -7 V, grounded ISL72028 I CAN, CANH, -7 V, bias ed ISL72026 I CAN, CANL, -7V , grounded -350 ISL72026 I CAN, CANL, -7V , bias ed ISL72027 I CAN, CANL, -7V , grounded ISL72027 I CAN, CANL, -7V , bias ed -400 CANH/L at ‐7V ISL72028 I CAN, CANL, -7V , grounded ISL72028 I CAN, CANL, -7V , bias ed Spec limit, CAN high -450 0 25 50 75 100 ANNE AL Total dose, krad(Si) at 0.0 1rad(Si)/s FIGURE 19. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver CAN bus input current (ICAN), CANH or CANL at -7V, D = 3V, LBK = RS = 0V, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is -400µA minimum Submit Document Feedback 12 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) -60 ISL72026 ICAN , CANH, ‐7V, grounded ISL72026 ICAN , CANH, ‐7V, bi ased ISL72027 ICAN , CANH, ‐7V, grounded -80 CAN input current, uA ISL72027 ICAN , CANH, ‐7V, bi ased ISL72028 ICAN , CANH, ‐7V, grounded -100 ISL72028 ICAN , CANH, ‐7V, bi ased ISL72026 ICAN , CANL, ‐7V, grounded ISL72026 ICAN , CANL, ‐7V, biased -120 ISL72027 ICAN , CANL, ‐7V, grounded ISL72027 ICAN , CANL, ‐7V, biased -140 ISL72028 ICAN , CANL, ‐7V, grounded CANH/L at -7V, VCC = 0 ISL72028 ICAN , CANL, ‐7V, biased Spec limit, CAN high -160 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 20. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver CAN bus input current (ICAN), CANH or CANL at -7V, D = 3V, VCC = RS = 0V, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is -150µA minimum. 60 IS L72026 Ri n, CANH, grounded IS L72026 Ri n, CANH, bi ased IS L72027 Ri n, CANH, grounded 50 Input resistance, kohms IS L72027 Ri n, CANH, bi ased IS L72028 Ri n, CANH, grounded IS L72028 Ri n, CANH, bi ased 40 IS L72026 Ri n, CANL, grounded IS L72026 Ri n, CANL, biased 30 IS L72027 Ri n, CANL, grounded IS L72027 Ri n, CANL, biased IS L72028 Ri n, CANL, grounded 20 IS L72028 Ri n, CANL, biased Spec limit Spec limit 10 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 21. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver input resistance (RIN), input to ground, D = 3V, LBK = RS = 0V, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089 rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 20kΩ to 50kΩ. Submit Document Feedback 13 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 120 ISL720 26 Rin (dif), grou nded ISL720 26 Rin (dif), biased Differential input resistance, kohms 100 ISL720 27 Rin (dif), grou nded ISL720 27 Rin (dif), biased ISL720 28 Rin (dif), grou nded 80 ISL720 28 Rin (dif), biased Spe c limit 60 Spe c limit 40 20 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 22. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver differential input resistance (RIND), input to input, D = 3V, LBK = RS = 0V, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 40kΩ to 100kΩ. 2.5 ISL720 26 ICC(L), gr ounde d ISL720 26 ICC(L), bi ase d Supply current, listen mode, mA 2 ISL720 27 ICC(L), gr ounde d 1.5 ISL720 27 ICC(L), bi ase d Spe c limit 1 0.5 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 23. ISL72026SEH and ISL72027SEH supply current in Listen mode (ICC(L)), RS = D = VCC, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 2.0mA maximum. Submit Document Feedback 14 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 60 Supply current, shutdown mode, uA ISL720 28 ICC(L), gr ounde d ISL720 28 ICC(L), bi ase d 40 Spe c limit 20 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 24. ISL72028SEH supply current in low power shutdown mode (ICC(L)), RS = D = VCC, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 50µA maximum. 8 IS L72026 ICC(DOM), grounded Supply current, dominant, mA 7 IS L72026 ICC(DOM), biased IS L72027 ICC(DOM), grounded 6 IS L72027 ICC(DOM), biased 5 IS L72028 ICC(DOM), grounded 4 IS L72028 ICC(DOM), biased Spec limit 3 2 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 25. ISL72026SEH, ISL72027SEH and ISL72028SEH supply current, dominant (ICC(DOM)), RS = D = LBK = 0V, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 7.0mA maximum. Submit Document Feedback 15 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 6 ISL72026 ICC(R EC), grounded Supply current, recessive, mA 5 ISL72026 ICC(R EC), biased ISL72027 ICC(R EC), grounded 4 ISL72027 ICC(R EC), biased 3 ISL72028 ICC(R EC), grounded ISL72028 ICC(R EC), biased 2 Spec limit 1 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 26. ISL72026SEH, ISL72027SEH and ISL72028SEH supply current, recessive (ICC(REC)), RS = LBK = 0V, D = VCC, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089 rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 5.0mA maximum. 30 ISL720 26 IL(CANH), 12 V, GND ISL720 26 IL(CANH), 12 V, biased CANH/ L = +12V 20 ISL720 27 IL(CANH), 12 V, GND CAN leakage current, uA ISL720 27 IL(CANH), 12 V, biased ISL720 28 IL(CANH), 12 V, GND 10 ISL720 28 IL(CANH), 12 V, biased ISL720 26 IL(CANL), 12V, G ND 0 ISL720 26 IL(CANL), 12V, b iased ISL720 27 IL(CANL), 12V, G ND ISL720 27 IL(CANL), 12V, b iased -10 ISL720 28 IL(CANL), 12V, G ND ISL720 28 IL(CANL), 12V, b iased -20 Spe c limit Spe c limit -30 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 27. ISL72026SEH, ISL72027SEH and ISL72028SEH cold sparing CANH and CANL leakage current (IL(CANH)) and IL(CANL)), VCC = 0.2V, RS = 0V, CANH or CANL = 12V, CANL or CANH open, D = VS, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are -25µA to 25µA. Submit Document Feedback 16 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 30 ISL72026 IL(CANH), ‐7V, GND ISL72026 IL(CANH), ‐7V, biased CANH/L = -7V 20 ISL72027 IL(CANH), ‐7V, GND CAN leakage current, uA ISL72027 IL(CANH), ‐7V, biased ISL72028 IL(CANH), ‐7V, GND 10 ISL72028 IL(CANH), ‐7V, biased ISL72026 IL(CANL), ‐7v, GND 0 ISL72026 IL(CANL), ‐7V, biased ISL72027 IL(CANL), ‐7V, GND -10 ISL72027 IL(CANL), ‐7V, biased ISL72028 IL(CANL), ‐7V, GND ISL72028 IL(CANL), ‐7V, biased -20 Spec limit Spec limit -30 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 28. ISL72026SEH, ISL72027SEH and ISL72028SEH cold sparing CANH and CANL leakage current (IL(CANH)) and IL(CANL)), VCC = 0.2V, RS = 0V, CANH or CANL = -7V, CANL or CANH open, D = VS, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The postirradiation SMD limits are -25µA to 25µA. 30 ISL720 27 IL(V RE F) , 12V, grou nded ISL720 27 IL(V RE F) , 12V, b iased 20 ISL720 28 IL(V RE F) , 12V, grou nded VREF leakage current, uA ISL720 28 IL(V RE F) , 12V, b iased 10 ISL720 27 IL(V RE F) , -7V, grou nded ISL720 27 IL(V RE F) , -7V, b iase d 0 ISL720 28 IL(V RE F) , -7V, grou nded ISL720 28 IL(V RE F) , -7V, b iase d -10 Spe c limit -20 Spe c limit -30 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 29. ISL72027SEH and ISL72028SEH cold sparing VREF leakage current (IL(VREF)), VCC = 0.2V, VREF = -7V or 12V, D = VS, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are -25µA to 25µA. Submit Document Feedback 17 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 160 0 ISL720 26 tPDLH1, g round ed ISL720 26 tPDLH1, b iased ISL720 27 tPDLH1, g round ed ISL720 27 tPDLH1, b iased ISL720 28 tPDLH1, g round ed Prop delay, LOW to HIGH, ns 120 0 ISL720 28 tPDLH1, b iased ISL720 26 tPDLH2, g round ed ISL720 26 tPDLH2, b iased RS = 50K ISL720 27 tPDLH2, g round ed ISL720 27 tPDLH2, b iased ISL720 28 tPDLH2, g round ed ISL720 28 tPDLH2, b iased 800 ISL720 26 tPDLH3, g round ed RS = 10K ISL720 26 tPDLH3, b iased ISL720 27 tPDLH3, g round ed ISL720 27 tPDLH3, b iased 400 ISL720 28 tPDLH3, g round ed ISL720 28 tPDLH3, b iased RS = 0V Spe c limit, RS =0V Spe c limit, RS =10K Spe c limit, RS =50K 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 30. ISL72026SEH, ISL72027SEH and ISL72028SEH driver propagation delay, LOW to HIGH, RS = 0V (tPDLH1), RS = 10kΩ (tPDLH2) and RS = 50kΩ (tPDLH3), as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 150ns maximum (tPDLH1), 850ns maximum (tPDLH2) and 1400ns maximum (tPDLH3). ISL720 26 tPDHL1, g round ed ISL720 26 tPDHL1, b iased ISL720 27 tPDHL1, g round ed 120 0 ISL720 27 tPDHL1, b iased ISL720 28 tPDHL1, g round ed Prop delay, HIGH to LOW, ns ISL720 28 tPDHL1, b iased ISL720 26 tPDHL2, g round ed ISL720 26 tPDHL2, b iased RS = 50K ISL720 27 tPDHL2, g round ed 800 ISL720 27 tPDHL2, b iased ISL720 28 tPDHL2, g round ed ISL720 28 tPDHL2, b iased ISL720 26 tPDHL3, g round ed RS = 10K ISL720 26 tPDHL3, b iased ISL720 27 tPDHL3, g round ed 400 ISL720 27 tPDHL3, b iased ISL720 28 tPDHL3, g round ed ISL720 28 tPDHL3, b iased RS = 0V Spe c limit, RS =0V Spe c limit, RS =10K Spe c limit, RS =50K 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 31. ISL72026SEH, ISL72027SEH and ISL72028SEH driver propagation delay, HIGH to LOW, RS = 0V (tPDHL1), RS = 10kΩ (tPDHL2) and RS = 50kΩ (tPDHL3), as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s, and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 155ns maximum (tPDHL1), 800ns maximum (tPDHL2) and 1300ns maximum (tPDHL3). Submit Document Feedback 18 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) ISL720 26 tSkew1, g rounde d ISL720 26 tSkew1, b iased 800 ISL720 27 tSkew1, g rounde d ISL720 27 tSkew1, b iased ISL720 28 tSkew1, g rounde d ISL720 28 tSkew1, b iased ISL720 26 tSkew2, g rounde d 600 ISL720 26 tSkew2, b iased Output skew, ns ISL720 27 tSkew2, g rounde d ISL720 27 tSkew2, b iased ISL720 28 tSkew2, g rounde d ISL720 28 tSkew2, b iased 400 ISL720 26 tSkew3, g rounde d ISL720 26 tSkew3, b iased ISL720 27 tSkew3, g rounde d ISL720 27 tSkew3, b iased 200 ISL720 28 tSkew3, g rounde d ISL720 28 tSkew3, b iased Spe c limit, RS =0V Spe c limit, RS =10K Spe c limit, RS =50K 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 32. ISL72026SEH, ISL72027SEH and ISL72028SEH driver output skew (tPHL - tPLH), RS = 0V (tSkew1), RS = 10kΩ (tSkew2) and RS = 50kΩ (tSkew3), as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 50ns maximum (tSkew1), 510ns maximum (tSkew2) and 800ns maximum (tSkew3). ISL720 26 tr1, groun ded ISL720 26 tr1, biased ISL720 27 tr1, groun ded 160 0 tr3 limit Output rise time, ns 120 0 tr2 limit 800 400 tr1, tr1, tr1, tr2, tr2, biased groun ded biased groun ded biased ISL720 27 ISL720 27 ISL720 28 ISL720 28 tr2, tr2, tr2, tr2, groun ded biased groun ded biased ISL720 26 ISL720 26 ISL720 27 ISL720 27 ISL720 28 tr3, tr3, tr3, tr3, tr3, groun ded biased groun ded biased groun ded ISL720 28 tr3, biased Spe c limit, tr1 Spe c limit, tr1 Spe c limit, tr2 Spe c limit, tr2 tr1 limit 0 0 ISL720 27 ISL720 28 ISL720 28 ISL720 26 ISL720 26 25 50 75 100 ANNEAL Spe c limit, tr3 Spe c limit, tr3 Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 33. ISL72026SEH, ISL72027SEH and ISL72028SEH driver output rise time, RS = 0V (tr1), RS = 10kΩ (tr2) and RS = 50kΩ (tr3), as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 20ns to 100ns (tr1), 200ns to 780ns (tr2) and 400ns to 1400ns (tr3). Submit Document Feedback 19 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 120 0 ISL720 26 tf1, gro unded ISL720 26 tf1, bia sed ISL720 27 tf1, gro unded tf3 limit ISL720 27 tf1, bia sed ISL720 28 tf1, gro unded ISL720 28 tf1, bia sed ISL720 26 tf2, gro unded ISL720 26 tf2, bia sed ISL720 27 tf2, gro unded ISL720 27 tf2, bia sed ISL720 28 tf2, gro unded ISL720 28 tf2, bia sed ISL720 26 tf3, gro unded ISL720 26 tf3, bia sed ISL720 27 tf3, gro unded ISL720 27 tf3, bia sed ISL720 28 tf3, gro unded ISL720 28 tf3, bia sed Spe c limit, tf1 Spe c limit, tf1 Output fall time, ns 800 tf2 limit 400 tf1 limit 0 0 25 50 75 100 ANNEAL Spe c limit, Spe c limit, Spe c limit, Spe c limit, tf2 tf2 tf3 tf3 Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 34. ISL72026SEH, ISL72027SEH and ISL72028SEH driver output fall time, RS = 0V (tf1), RS = 10kΩ (tf2) and RS = 50kΩ (tf3), as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 10ns to 100ns (tf1), 175ns to 780ns (tf2) and 300ns to 1400ns (tf3). 160 0 ISL72026 tLO OP1, grounded ISL72026 tLO OP1, biased ISL72027 tLO OP1, grounded ISL72027 tLO OP1, biased Loop delay, recessive to dominant, ns ISL72028 tLO OP1, grounded 120 0 ISL72028 tLO OP1, biased ISL72026 tLO OP2, grounded ISL72026 tLO OP2, biased ISL72027 tLO OP2, grounded ISL72027 tLO OP2, biased 800 ISL72028 tLO OP2, grounded ISL72028 tLO OP2, biased ISL72026 tLO OP3, grounded ISL72026 tLO OP3, biased ISL72027 tLO OP3, grounded ISL72027 tLO OP3, biased 400 ISL72028 tLO OP3, grounded ISL72028 tLO OP3, biased Spec limit, tL O OP1 Spec limit, tL O OP2 Spec limit, tL O OP3 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 35. ISL72026SEH, ISL72027SEH and ISL72028SEH driver total loop delay t(LOOP1), driver input to receiver output, recessive to dominant, RS = 0V t(LOOP1), RS = 10kΩ t(LOOP2) and RS = 50kΩ t(LOOP3), as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 210ns maximum t(LOOP1), 875ns maximum t(LOOP2) and 1400ns maximum t(LOOP3). Submit Document Feedback 20 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) ISL720 26 tLO OP1, g round ed Loop delay, dominant to recessive, ns ISL720 26 tLO OP1, b iased ISL720 27 tLO OP1, g round ed 120 0 ISL720 27 tLO OP1, b iased ISL720 28 tLO OP1, g round ed ISL720 28 tLO OP1, b iased ISL720 26 tLO OP2, g round ed ISL720 26 tLO OP2, b iased ISL720 27 tLO OP2, g round ed 800 ISL720 27 tLO OP2, b iased ISL720 28 tLO OP2, g round ed ISL720 28 tLO OP2, b iased ISL720 26 tLO OP3, g round ed ISL720 26 tLO OP3, b iased ISL720 27 tLO OP3, g round ed 400 ISL720 27 tLO OP3, b iased ISL720 28 tLO OP3, g round ed ISL720 28 tLO OP3, b iased Spe c limit, tLO OP1 Spe c limit, tLO OP2 Spe c limit, tLO OP3 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0. 01rad(Si)/s FIGURE 36. ISL72026SEH, ISL72027SEH and ISL72028SEH driver total loop delay t(LOOP2), driver input to receiver output, dominant to recessive, RS = 0V t(LOOP1), RS = 10kΩ t(LOOP2) and RS = 50kΩ t(LOOP3), as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 270ns maximum t(LOOP1), 825ns maximum t(LOOP2) and 1300ns maximum t(LOOP3). 120 ISL720 26 tPL H, ground ed ISL720 26 tPL H, biased Receiver propagation delay, ns 100 ISL720 27 tPL H, ground ed ISL720 27 tPL H, biased 80 ISL720 28 tPL H, ground ed ISL720 28 tPL H, biased 60 ISL720 26 tPHL, ground ed ISL720 26 tPHL, biased ISL720 27 tPHL, ground ed 40 ISL720 27 tPHL, biased ISL720 28 tPHL, ground ed 20 ISL720 28 tPHL, biased Spe c limit 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 37. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver propagation delay (tPLH and tPHL), LOW to HIGH and HIGH to LOW, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 110ns maximum. Submit Document Feedback 21 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 40 ISL 720 26 tSK EW, grou nded ISL 720 26 tSK EW, biased Receiver output skew, ns 30 ISL 720 27 tSK EW, grou nded ISL 720 27 tSK EW, biased ISL 720 28 tSK EW, grou nded 20 ISL 720 28 tSK EW, biased Sp e c limit 10 0 0 25 50 75 100 ANNEAL Total dose, krad(S i) at 0.01rad(Si)/s FIGURE 38. ISL72026SEH, ISL72027SEH and ISL72028SEH receiver skew (tSKEW1 = tPHL - tPLH) as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 35ns maximum. 80 ISL720 26 tLP BK(HL), g rounde d ISL720 26 tLP BK(HL), b iased 60 Loopback delay, ns ISL720 26 tLP BK(LH), g rounde d ISL720 26 tLP BK(LH), b iased 40 Spe c limit 20 0 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 39. ISL72026SEH loopback delay (tLBK), IO to receiver output as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is 75ns maximum. Submit Document Feedback 22 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 1.7 ISL720 27 VREF, sin kin g, gro u nded ISL720 27 VREF, sin kin g, bia sed ISL720 27 VREF, so urci ng, g ro unded Reference voltage, 5uA, V 1.6 ISL720 27 VREF, so urci ng, b ia sed ISL720 28 VREF, sin kin g, gro u nded 1.5 ISL720 28 VREF, sin kin g, bia sed ISL720 28 VREF, so urci ng, g ro unded ISL720 28 VREF, so urci ng, b ia sed 1.4 Spe c limit Spe c limit 1.3 0 25 50 75 10 0 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 40. ISL72027SEH and ISL72028SEH reference pin voltage (VREF), 5µA sourcing and sinking, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 1.35V to 1.65V. 1.9 ISL720 27 VREF, sin kin g, grou nded 1.8 ISL720 27 VREF, sin kin g, biased ISL720 27 VREF, so urci ng, gro unded Reference voltage, 50uA, V 1.7 ISL720 27 VREF, so urci ng, bia sed 1.6 ISL720 28 VREF, sin kin g, grou nded 1.5 ISL720 28 VREF, sin kin g, biased 1.4 ISL720 28 VREF, so urci ng, gro unded ISL720 28 VREF, so urci ng, bia sed 1.3 Spe c limit 1.2 Spe c limit 1.1 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 41. ISL72027SEH and ISL72028SEH reference pin voltage (VREF), 50µA sourcing and sinking, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 1.2V to 1.8V. Submit Document Feedback 23 TR022.0 November 10, 2015 Test Report 022 Variables Data Plots (Continued) 0 ISL720 26 IRSH, gro unded ISL720 26 IRSH, bia sed RS current, high speed mode, uA -100 ISL720 27 IRSH, gro unded ISL720 27 IRSH, bia sed -200 ISL720 28 IRSH, gro unded ISL720 28 IRSH, bia sed -300 Spe c limit, CA N high -400 -500 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.0 1rad(Si)/s FIGURE 42. ISL72026SEH, ISL72027SEH and ISL72028SEH RS input current (IRSH), high speed mode, as a function of low dose rate irradiation for the biased (perFigure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is -450µA minimum. 0 ISL720 26 IRSL, ground ed ISL720 26 IRSL, biased -2 RS current, listen mode, uA ISL720 27 IRSL, ground ed -4 ISL720 27 IRSL, biased ISL720 28 IRSL, ground ed -6 ISL720 28 IRSL, biased Spe c limit -8 -10 -12 0 25 50 75 100 ANNEAL Total dose, krad(Si) at 0.01rad(Si)/s FIGURE 43. ISL72026SEH, ISL72027SEH and ISL72028SEH RS input current (IRSL), listen mode, as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limit is -10µA minimum Submit Document Feedback 24 TR022.0 November 10, 2015 Test Report 022 Conclusion This document reports results of a total dose test of the ISL72026SEH, ISL72027SEH and ISL72028SEH Controller Area Network (CAN) transceivers. The test was conducted in order to determine the sensitivity of the parts to the low dose rate total dose environment found in nearly all space applications. Parts were tested to 75krad(Si) at low dose rate under biased and unbiased conditions, as outlined in MIL-STD-883 Test Method 1019, and were then subjected to a high temperature biased anneal at +100°C for 168 hours. ATE characterization testing at downpoints showed no rejects to the SMD Group A parametric limits (indicated by a 'Bin 1' category) after biased and grounded irradiation at low dose rate and after the 168 hour +100°C biased anneal. Attributes data is presented in Table 3, while variables data for selected parameters is plotted in Figures 5 through 43. No differences between biased and unbiased irradiation were noted and the part is not considered bias sensitive. TABLE 3. REPORTED PARAMETERS FIGURE LIMIT LOW LIMIT HIGH UNIT Dominant bus output voltage 2.25 3.0 V D = 0V Dominant bus output voltage 0.1 1.25 V D = 0V Recessive bus output voltage 1.8 2.7 V D = 3V Recessive bus output voltage 1.8 2.8 V D = 3V Dominant differential output voltage 1.5 3.0 V D = 0V Dominant differential output voltage 1.2 3.0 V D = 0V Recessive differential output voltage -120 12 mV D = 3V Recessive differential output voltage -500 50 mV D = 3V Logic HIGH input current -30 30 µA D input Logic LOW input current -30 30 µA D input Output short-circuit current -250 - mA CANH = -7V, CANL open Output short-circuit current - 250 mA CANL = 12V, CANH open Output short-circuit current -1.0 - mA CANH = 12V, CANL open Output short-circuit current - 1.0 mA CANL = -7V, CANH open Input threshold voltage, rising - 900 mV RS = 0V, 10k and 50k Input threshold voltage, falling 500 - mV RS = 0V, 10k and 50k 13 Input hysteresis voltage 40 - mV 14 Input threshold voltage, rising, loopback mode - 1150 mV RS = 0V, 10k and 50k Input threshold voltage, falling, loopback mode 525 - mV RS = 0V, 10k and 50k 15 Input hysteresis voltage, loopback mode 50 - mV 16 Receiver output HIGH voltage 2.4 - V IOUT = -4mA Receiver output LOW voltage - 0.4 V IOUT = 4mA 17 CAN bus input current - 500 µA CANH or CANL = 12V 18 CAN bus input current, supply off - 250 µA CANH or CANL = 12V, VCC = 0V 19 CAN bus input current -400 - µA CANH or CANL = -7V 20 CAN bus input current, supply off -150 - µA CANH or CANL = -7V, VCC = 0V 21 Input resistance 20.0 50.0 kΩ 22 Differential input resistance 40.0 100.0 kΩ 23 Supply current, listen mode - 2.0 mA 24 Supply current, low current shutdown mode - 50.0 µA 25 Supply current, dominant - 7.0 mA 5 6 7 8 9 10 11 12 PARAMETER Submit Document Feedback 25 NOTES TR022.0 November 10, 2015 Test Report 022 TABLE 3. REPORTED PARAMETERS FIGURE PARAMETER LIMIT LOW LIMIT HIGH UNIT - 5.0 mA NOTES 26 Supply current, recessive 27 CANH leakage current -30.0 30.0 µA 28 CANL leakage current -30.0 30.0 µA 29 VREF leakage current -30.0 30.0 µA 30 Driver propagation delay, LOW to HIGH - 150.0 ns RS = 0V Driver propagation delay, LOW to HIGH - 850.0 ns RS = 10k Driver propagation delay, LOW to HIGH - 1400.0 ns RS = 50k Driver propagation delay, HIGH to LOW - 155.0 ns RS = 0V Driver propagation delay, HIGH to LOW - 800.0 ns RS = 10k Driver propagation delay, HIGH to LOW - 1300.0 ns RS = 50k Driver output skew - 50.0 ns RS = 0V Driver output skew - 510.0 ns RS = 10k Driver output skew - 800.0 ns RS = 50k Driver output rise time 20.0 100.0 ns RS = 0V Driver output rise time 200.0 780.0 ns RS = 10k Driver output rise time 400.0 1400.0 ns RS = 50k Driver output fall time 10.0 75.0 ns RS = 0V Driver output fall time 175.0 500.0 ns RS = 10k Driver output fall time 300.0 1000.0 ns RS = 50k Total loop delay, dominant to recessive - 210.0 ns RS = 0V Total loop delay, dominant to recessive - 875.0 ns RS = 10k Total loop delay, dominant to recessive - 1400.0 ns RS = 50k Total loop delay, recessive to dominant - 270.0 ns RS = 0V Total loop delay, recessive to dominant - 825.0 ns RS = 10k Total loop delay, recessive to dominant - 1300.0 ns RS = 50k Receiver propagation delay, LOW to HIGH - 110.0 ns Receiver propagation delay, HIGH to LOW - 110.0 ns 38 Receiver skew - 35.0 ns 39 Loopback delay, IO to receiver output - 75.0 ns 40 VREF pin voltage 1.35 1.65 V -5µA to 5µA 41 VREF pin voltage 1.2 1.8 V -50µA to 50µA 42 RS input current, high speed mode -450.0 - µA 43 RS input current, listen mode -10.0 - µA 31 32 33 34 35 36 37 NOTES: 3. Limits are taken from Standard Microcircuit Drawing (SMD) 5962-15228. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that the document is current before proceeding. For information regarding Intersil Corporation and its products, see www.intersil.com Submit Document Feedback 26 TR022.0 November 10, 2015