isl71840seh eldrs test report

Test Report 010
Total Dose Testing of the ISL71840SEH 16-channel
Analog Multiplexer
Introduction
This document provides interim results of a low and high dose
rate total dose test of the ISL71840SEH 16-channel analog
multiplexer. The test was conducted in order to determine the
sensitivity of the part to the total dose environment and to
determine if any dose rate sensitivity exists. High dose rate
testing under bias is complete through 150krad(Si) and the
subsequent high temperature biased anneal while low dose
rate testing under bias and with all pins grounded is at the
intermediate 100krad(Si) downpoint.
Reference Documents
• MIL-STD-883 test method 1019
• ISL71840SEH datasheet.
• Standard Microcircuit Drawing (SMD) 5962-15219
Part Description
The ISL71840SEH is a radiation hardened 16-channel analog
multiplexer that is fabricated using Intersil’s proprietary P6SOI
(Silicon on Insulator) process to mitigate single-event effects
and improve total ionizing dose performance. The part
operates from a dual supply voltage ranging from ±10.8V to
±16.5V and has four address inputs and an ENABLE pin that
can be driven with adjustable logic thresholds to select 1 of 16
available channels. An inactive channel is separated from an
active channel by high impedance, which inhibits any
interaction between them. The ISL71840SEH’s low switch
ON-resistance (rON) allows improved signal integrity and
reduced power losses. The ISL71840SEH is also designed for
cold sparing making it suitable for high reliability applications
that have redundancy requirements. The part is designed to
provide a high impedance to the analog source while in a
powered OFF condition, making it easy to add additional
backup devices without loading signal sources. The
ISL71840SEH also incorporates input analog overvoltage
protection up to ±35V, which will disable the switch to protect
downstream devices. All inputs are Electrostatic Discharge
(ESD) protected to 8kV Human Body Model (HBM). The
ISL71840SEH is available in a 28 Ld flatpack or in die form
and operates across the extended temperature range of -55°C
to +125°C.
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1
As the ISL71840SEH is the third version of the part, a brief
historical note may be in order. The first Intersil 16-channel
multiplexer was the HS-1840RH. This part was built in an early
dielectrically isolated metal gate CMOS process. The key to
hardening a metal gate process at the time was the gate metal
deposition, which must be performed using a flash evaporator.
In the 1995 time frame this by then obsolete equipment
became difficult to maintain and the metal gate process could
no longer be supported. As a result the HS-1840RH was
obsoleted.
The HS-1840RH was followed by the HS-1840ARH, which was
designed in the later RSG process and was developed in order
to continue supplying this very popular part, which performs a
key function in many space systems. As part of the redesign
the HS-1840ARH gained some functionality made possible by
the bipolar devices available in RSG, which the metal gate
process did not support. Bipolar circuit blocks in the
HS-1840ARH included the on-chip voltage reference, the
digital input ESD network and the VDD and VSS ESD nets.
The ISL71840SEH is the subject of the present report and was
designed as an updated version of the HS-1840ARH, with
improvements in the switch ON-resistance and in cold sparing
capabilities.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
Test Report 010
VDD
IN1
A0
1
OUT
A1
A2
A3
IN16
16
EN
ADDRESS INPUT BUFFER
AND LEVEL SHIFTER
DECODERS
VSS
MULTIPLEX SWITCHES
FIGURE 1. ISL71840SEH BLOCK DIAGRAM
Test Description
Irradiation Facilities
High dose rate testing was performed using a Gamma cell
220 60Co irradiator located in the Palm Bay, Florida Intersil facility.
Low dose rate testing was performed using a Hopewell Designs N40
panoramic low dose rate 60Co irradiator located in the same facility.
The high dose rate irradiations were performed at 69.72rad(Si)/s
and the low dose rate work was performed at 0.0089rad(Si)/s
(8.9mrad(Si)/s), both in accordance with MIL-STD-883 Method
1019. The low dose rate exposures used a PbAl box to shield the test
board and devices under test against low energy secondary gamma
radiation.
Test Fixturing
Figure 2 on page 3 shows the configuration and power supply
sequencing used for biased irradiation.
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Test Report 010
233032-005-664
ISL71840 (HDR/LDR) Mask # 54252A01
V1
R1
1 (Vdd)
2 N/C
3 N/C
(Out) 28
(Vss) 27
(S8) 26
(S7) 25
(S6) 24
(S5) 23
(S4) 22
(S3) 21
(S2) 20
(S1) 19
(EnB) 18
(A0) 17
(A1) 16
(A2) 15
4 (S16)
5 (S15)
6 (S14)
7 (S13)
8 (S12)
9 (S11)
10 (S10)
11 (S9)
12 (Gnd)
13 (VRef)
14 (A3)
GND
1.)
2.)
3.)
4.)
5.)
6.)
7.)
GND
V2
V3
V1 = +16.5v, +/- 0.1v
V2 = -16.5v, +/-0.1v
V3 = +5.5v, +/-0.1v
R1 = 1kOhm, +/-5%, ¼ Watt (Per socket)
Socket is 28 pin flatpack (Sensata 628-0282315)
Power up sequence is V1, V2, V3.
Reverse order for power down(V3, V2, V1).
FIGURE 2. IRRADIATION BIAS CONFIGURATION AND POWER SUPPLY SEQUENCING FOR THE ISL71840SEH
Characterization Equipment and Procedures
All electrical testing was performed outside the irradiator using
production Automated Test Equipment (ATE) with data logging of
all parameters at each downpoint. Downpoint electrical testing
was performed at room temperature.
Experimental Matrix
Testing proceeded in accordance with the guidelines of MIL-STD-883
Test Method 1019. The experimental matrix consisted of four
samples irradiated at high dose rate under bias, four samples
irradiated at low dose rate with all pins grounded and four samples
irradiated at low dose rate under bias, (three control units were
used).
Samples of the ISL71840SEH were drawn from development lot
J67669 (wafers 1 and 2) as part of the routine wafer-by-wafer
acceptance testing procedure and were packaged in the
production hermetic 28-pin ceramic flatpack package outline
K28.A. The samples were processed through the standard burn
in cycle and were screened to the SMD 5962-15219 limits at
room, low and high temperatures before irradiation.
samples were subjected to a high temperature biased anneal for
168 hours at 100°C following irradiation. The low dose rate
samples will be continued to 150krad(Si) and will then be
subjected to the same anneal.
Results
Attributes Data
Testing at high dose rate under bias of the ISL71840SEH is
complete and showed no reject devices after irradiation to
150krad(Si) or after the post-150krad(Si) irradiation anneal.
Testing at low dose rate under bias and grounded is complete
through 100krad(Si) and showed no reject devices after
irradiation to that level. Table 1 on page 4 summarizes the
results.
Downpoints
Downpoints to date for the low dose rate tests were zero,
10krad(Si), 30krad(Si), 50krad(Si), 75krad(Si) and 100krad(Si).
Downpoints for the high dose rate test were zero, 30krad(Si),
50krad(Si), 100krad(Si) and 150krad(Si). The high dose rate
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Test Report 010
TABLE 1. ISL71840SEH TOTAL DOSE TEST ATTRIBUTES DATA
DOSE RATE
BIAS
SAMPLE SIZE
0.0089rad(Si)/s
Figure 2
4
0.0089rad(Si)/s
69.72rad(Si)/s
Grounded
Figure 2
4
4
DOWNPOINT
BIN 1
REJECTS
Preirradiation
4
10krad(Si)
4
0
30krad(Si)
4
0
50krad(Si)
4
0
75krad(Si)
4
0
100krad(Si)
4
0
150krad(Si)
Test in progress
Test in progress
Anneal, 168 hours at 100°C
Test in progress
Test in progress
Preirradiation
4
10krad(Si)
4
0
30krad(Si)
4
0
50krad(Si)
4
0
75krad(Si)
4
0
100krad(Si)
4
0
150krad(Si)
Test in progress
Test in progress
Anneal, 168 hours at 100°C
Test in progress
Test in progress
Preirradiation
4
30krad(Si)
4
0
50krad(Si)
4
0
100krad(Si)
4
0
150krad(Si)
4
0
Anneal, 168 hours at 100°C
4
0
NOTES:
1. Bin 1 indicates a device that passes all preirradiation specification limits.
2. The 168 hours anneal was performed at 100°C using the bias configuration shown in Figure 2.
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Test Report 010
Variables Data
interpretation of the results as well as managing the length of
this report. All samples showed excellent stability over
irradiation, with no observed dose rate sensitivity. See the
conclusion on page 25 for further discussion.
The plots in Figures 3 through 41 show data at all downpoints to
date. The plots show the median of key parameters as a function
of total dose for each of the four irradiation conditions. Many of
the plots show the total dose response of the average of
parameters such as ON resistance and the various leakage
parameters for each of the 16 channels in order to facilitate the
Variables Data Plots
400
SPEC LIMIT
POSITIVE SUPPLY CURRENT (µA)
350
300
250
LDR BIASED
LDR GND
HDR BIASED
200
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 3. ISL71840SEH positive supply current as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at
low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the
high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 350µA maximum.
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Test Report 010
Variables Data Plots (Continued)
NEGATIVE SUPPLY CURRENT (µA)
-200
-250
-300
SPEC LIMIT
-350
LDR BIASED
LDR GND
-400
0
50
100
150
ANNEAL
HDR BIASED
TOTAL DOSE (krad(Si))
FIGURE 4. ISL71840SEH negative supply current as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at
low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the
high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is -350µA minimum.
NEGATIVE SUPPLY CURRENT (µA)
400
SPEC LIMIT
350
300
250
LDR BIASED
LDR GND
HDR BIASED
200
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 5. ISL71840SEH positive standby current as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and
at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and
the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 350µA
maximum.
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Variables Data Plots (Continued)
NEGATIVE SUPPLY CURRENT (µA)
-200
-250
-300
SPEC LIMIT
-350
LDR BIASED
LDR GND
HDR BIASED
-400
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 6. ISL71840SEH negative standby current as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and
at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and
the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is -350µA
minimum.
40
SPEC LIMIT
REFERENCE CURRENT (µA)
35
30
25
LDR BIASED
LDR GND
HDR BIASED
20
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 7. ISL71840SEH reference current as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low
dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the
high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 35µA maximum.
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Variables Data Plots (Continued)
800
SPEC LIMIT
ON-RESISTANCE (Ω)
700
600
500
400
LDR BIASED
300
LDR GND
HDR BIASED
200
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 8. ISL71840SEH ON-resistance, average of all 16 channels, ±15V supplies, 1.0mA output current, 5V input voltage, as a function of total
dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the
biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each
of the three cells was 4. The postirradiation SMD limit is 700Ω maximum.
800
SPEC LIMIT
ON-RESISTANCE (Ω)
700
600
500
400
LDR BIASED
300
LDR GND
HDR BIASED
200
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 9. ISL71840SEH ON-resistance, average of all 16 channels, ±15V supplies, 1mA output current, -5V input voltage, as a function of total
dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the
biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each
of the three cells was 4. The postirradiation SMD limit is 700Ω maximum.
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Test Report 010
Variables Data Plots (Continued)
600
550
SPEC LIMIT
500
ON-RESISTANCE (Ω)
450
400
350
300
250
LDR BIASED
200
LDR GND
150
100
HDR BIASED
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 10. ISL71840SEH ON-resistance, average of all 16 channels, ±15V supplies, 1mA output current, 15V input voltage, as a function of total
dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the
biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each
of the three cells was 4. The postirradiation SMD limit is 500Ω maximum.
600
550
SPEC LIMIT
500
ON-RESISTANCE (Ω)
450
400
350
300
250
LDR BIASED
200
LDR GND
150
HDR BIASED
100
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 11. ISL71840SEH ON-resistance, average of all 16 channels, ±15V supplies, 1mA output current, -15V input voltage, as a function of total
dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the
biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each
of the three cells was 4. The postirradiation SMD limit is 500Ω maximum.
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Variables Data Plots (Continued)
25
SPEC LIMIT
ON-RESISTANCE (Ω)
20
15
10
LDR BIASED
5
LDR GND
HDR BIASED
0
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 12. ISL71840SEH ON-resistance match, average of all 16 channels, ±15V supplies, -1mA output current, +5V input voltage, as a function
of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded)
and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size
for each of the three cells was 4. The postirradiation SMD limit is 20Ω maximum.
25
SPEC LIMIT
ON-RESISTANCE (Ω)
20
15
10
LDR BIASED
5
LDR GND
HDR BIASED
0
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 13. ISL71840SEH ON-resistance match, average of all 16 channels, ±15V supplies, -1mA output current, -5V input voltage, as a function
of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded)
and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size
for each of the three cells was 4. The postirradiation SMD limit is 20Ω maximum.
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Variables Data Plots (Continued)
150
SPEC LIMIT
SWITCH OFF LEAKAGE (nA)
100
50
0
-50
SPEC LIMIT
LDR BIASED
-100
LDR GND
HDR BIASED
-150
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 14. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, supply voltage
±15V, input voltage +11.5V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose
rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high
dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to 100nA.
150
SPEC LIMIT
SWITCH OFF LEAKAGE (nA)
100
50
0
-50
LDR BIASED
SPEC LIMIT
LDR GND
-100
HDR BIASED
-150
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 15. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, supply voltage ±15V,
input voltage -11.5V as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for
the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate
was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to 100nA.
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Variables Data Plots (Continued)
1000
800
SPEC LIMIT
SWITCH OFF LEAKAGE (nA)
600
400
200
0
-200
-400
LDR BIASED
-600
LDR GND
SPEC LIMIT
HDR BIASED
-800
-1000
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 16. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, supply voltage ±15V, input
overvoltage +35V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the
unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was
69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -750nA to +750nA.
1000
SPEC LIMIT
800
SWITCH OFF LEAKAGE (nA)
600
400
200
0
-200
-400
LDR BIASED
-600
SPEC LIMIT
LDR GND
-800
-1000
HDR BIASED
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 17. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, supply voltage ±15V,
input overvoltage -35V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate
for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose
rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -750nA to
+750nA.
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Variables Data Plots (Continued)
600
SPEC LIMIT
SWITCH OFF LEAKAGE (nA)
400
200
0
-200
LDR BIASED
LDR GND
-400
SPEC LIMIT
HDR BIASED
-600
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 18. ISL71840SEH switch OFF leakage (ID(OFF)) into the drain of an unselected channel, supply voltage ±15V, input overvoltage +35V, as
a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins
grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s.
Sample size for each of the three cells was 4. The postirradiation SMD limits are -500nA to +500nA.
600
SPEC LIMIT
SWITCH OFF LEAKAGE (nA)
400
200
0
-200
LDR BIASED
-400
SPEC LIMIT
LDR GND
HDR BIASED
-600
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 19. ISL71840SEH switch OFF leakage (ID(OFF)) into the drain of an unselected channel, supply voltage ±15V, input overvoltage -35V, as a
function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins
grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s.
Sample size for each of the three cells was 4. The postirradiation SMD limits are -500nA to +500nA.
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Variables Data Plots (Continued)
600
SPEC LIMIT
SWITCH ON LEAKAGE (nA)
400
200
0
-200
LDR BIASED
-400
SPEC LIMIT
LDR GND
HDR BIASED
-600
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 20. ISL71840SEH switch ON leakage (IS(ON)) into the source of a selected channel, average of all 16 channels, supply voltage ±15V, input
overvoltage +35V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for
the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate
was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -500nA to +500nA.
600
SPEC LIMIT
SWITCH ON LEAKAGE (nA)
400
200
0
-200
LDR BIASED
LDR GND
-400
SPEC LIMIT
HDR BIASED
-600
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 21. ISL71840SEH switch ON leakage (IS(ON)) into the source of a selected channel, average of all 16 channels, supply voltage ±15V, input
overvoltage -35V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for
the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate
was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -500nA to +500nA.
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Variables Data Plots (Continued)
150
SPEC LIMIT
SWITCH OFF LEAKAGE (nA)
100
50
0
-50
LDR BIASED
SPEC LIMIT
LDR GND
-100
HDR BIASED
-150
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 22. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, with supply, address
and ENABLE pins open, input voltage +25V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case
and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s
and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA
to +100nA.
150
SPEC LIMIT
SWITCH OFF LEAKAGE (nA)
100
50
0
-50
SPEC LIMIT
LDR BIASED
-100
LDR GND
HDR BIASED
-150
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 23. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, with supply, address
and ENABLE pins open, input voltage -25V as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case
and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s
and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA
to +100nA.
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Test Report 010
Variables Data Plots (Continued)
150
SPEC LIMIT
SWITCH ON LEAKAGE (nA)
100
50
0
-50
SPEC LIMIT
LDR BIASED
-100
LDR GND
HDR BIASED
-150
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 24. ISL71840SEH switch ON leakage (ID(ON)) into the source and drain of a selected channel, average of all 16 channels, supply voltage
±15V, input and output voltage 10V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at
low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the
high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to
+100nA.
150
SPEC LIMIT
SWITCH ON LEAKAGE (nA)
100
50
0
-50
SPEC LIMIT
LDR BIASED
-100
LDR GND
HDR BIASED
-150
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 25. ISL71840SEH switch ON leakage (ID(ON)) into the source and drain of a selected channel, average of all 16 channels, supply voltage
±15V, input and output voltage -10V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at
low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the
high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to
+100nA.
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Test Report 010
Variables Data Plots (Continued)
100
SPEC LIMIT
80
SWITCH OFF LEAKAGE (nA)
60
40
20
0
-20
-40
LDR BIASED
-60
SPEC LIMIT
LDR GND
-80
-100
HDR BIASED
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 26. ISL71840SEH switch OFF leakage (ID(OFF)) into the drain with the part disabled, supply voltage ±15V, output voltage +10V, input
voltage -10V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the
unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was
69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -80nA to +80nA.
100
SPEC LIMIT
80
SWITCH OFF LEAKAGE (nA)
60
40
20
0
-20
-40
-60
LDR BIASED
SPEC LIMIT
-80
-100
LDR GND
HDR BIASED
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 27. ISL71840SEH switch OFF leakage (ID(OFF)) into the drain with the part disabled, supply voltage ±15V, output voltage -10V, input
voltage +10V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the
unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was
69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -80nA to +80nA.
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Test Report 010
Variables Data Plots (Continued)
900
SPEC LIMIT
800
700
tALH (ns)
600
500
400
300
200
LDR BIASED
LDR GND
100
HDR BIASED
0
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 28. ISL71840SEH address to output access time, LOW-to-HIGH, supply voltage ±15V, as a function of total dose irradiation at high dose
rate for the biased case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose
rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The
postirradiation SMD limit is 800ns maximum.
900
SPEC LIMIT
800
700
tALH (ns)
600
500
400
300
200
LDR BIASED
LDR GND
100
HDR BIASED
0
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 29. ISL71840SEH address to output access time, HIGH-to-LOW, supply voltage ±15V, as a function of total dose irradiation at high dose
rate for the biased case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose
rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 800ns maximum.
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Test Report 010
Variables Data Plots (Continued)
450
SPEC LIMIT
400
350
tBBM (ns)
300
250
200
150
LDR BIASED
100
LDR GND
50
HDR BIASED
SPEC LIMIT
0
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 30. ISL71840SEH break-before-make time delay, supply voltage ±15V, as a function of total dose irradiation at high dose rate for the
biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose
rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The
postirradiation SMD limits are 5ns to 400ns.
900
SPEC LIMIT
800
700
tON(EN) (ns)
600
500
400
300
200
LDR BIASED
LDR GND
100
HDR BIASED
0
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 31. ISL71840SEH enable to output ON delay, supply voltage ±15V, as a function of total dose irradiation at high dose rate for the biased
(per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate
was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation
SMD limit is 800ns maximum
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Test Report 010
Variables Data Plots (Continued)
900
SPEC LIMIT
800
700
tOFF(EN) (ns)
600
500
400
300
200
LDR BIASED
100
LDR GND
HDR BIASED
0
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 32. ISL71840SEH enable to output OFF delay, supply voltage ±15V, as a function of total dose irradiation at high dose rate for the biased
(per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate
was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation
SMD limit is 800ns maximum.
900
SPEC LIMIT
800
700
tALH (ns)
600
500
400
300
200
LDR BIASED
100
LDR GND
HDR BIASED
0
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 33. ISL71840SEH address to output access time, LOW-to-HIGH, supply voltage ±12V, as a function of total dose irradiation at high dose
rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases.
The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The
postirradiation SMD limit is 800ns maximum.
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Test Report 010
Variables Data Plots (Continued)
900
SPEC LIMIT
800
700
tALH (ns)
600
500
400
300
200
LDR BIASED
LDR GND
100
HDR BIASED
0
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 34. ISL71840SEH address to output access time, HIGH-to-LOW, supply voltage ±12V, as a function of total dose irradiation at high dose
rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases.
The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The
postirradiation SMD limit is 800ns maximum.
450
SPEC LIMIT
400
350
tBBM (ns)
300
250
200
150
100
LDR BIASED
50
LDR GND
SPEC LIMIT
0
0
50
HDR BIASED
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 35. ISL71840SEH break-before-make time delay, supply voltage ±12V, as a function of total dose irradiation at high dose rate for the
biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose
rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The
post-irradiation SMD limits are 5ns to 400ns.
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Test Report 010
Variables Data Plots (Continued)
900
SPEC LIMIT
800
700
tON(EN) (ns)
600
500
400
300
200
LDR BIASED
100
0
LDR GND
HDR BIASED
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 36. ISL71840SEH enable to output ON delay, supply voltage ±12V, as a function of total dose irradiation at high dose rate for the biased
(per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate
was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation
SMD limit is 800ns maximum.
900
SPEC LIMIT
800
700
tOFF(EN) (ns)
600
500
400
300
200
LDR BIASED
LDR GND
100
HDR BIASED
0
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 37. ISL71840SEH enable to output OFF delay, supply voltage ±12V, as a function of total dose irradiation at high dose rate for the biased
(per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate
was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation
SMD limit is 800ns maximum.
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Test Report 010
Variables Data Plots (Continued)
150
SPEC LIMIT
INPUT HIGH CURRENT (nA)
100
50
0
-50
SPEC LIMIT
-100
LDR BIASED
LDR GND
-150
0
50
100
150
ANNEAL
HDR BIASED
TOTAL DOSE (krad(Si))
FIGURE 38. ISL71840SEH input HIGH current, average of four addresses and ENABLE, as a function of total dose irradiation at high dose rate for
the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low
dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The
postirradiation SMD limits are -100nA to 100nA.
150
SPEC LIMIT
INPUT LOW CURRENT (nA)
100
50
0
-50
SPEC LIMIT
LDR BIASED
-100
LDR GND
-150
HDR BIASED
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 39. ISL71840SEH input LOW current, average of four addresses and ENABLE, as a function of total dose irradiation at high dose rate for
the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low
dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The
postirradiation SMD limits are -100nA to 100nA.
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Variables Data Plots (Continued)
1.8
1.7
SPEC LIMIT
INPUT LOW VOLTAGE (V)
1.6
1.5
1.4
1.3
SPEC LIMIT
1.2
LDR BIASED
1.1
LDR GND
1.0
0
50
100
150
ANNEAL
HDR BIASED
TOTAL DOSE (krad(Si))
FIGURE 40. ISL71840SEH input LOW voltage, average of four addresses and ENABLE, as a function of total dose irradiation at high dose rate for
the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low
dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The
postirradiation SMD limits are 1.2V to 1.6V.
1.8
1.7
SPEC LIMIT
INPUT HIGH VOLTAGE (V)
1.6
1.5
1.4
1.3
SPEC LIMIT
1.2
LDR BIASED
1.1
1.0
LDR GND
HDR BIASED
0
50
100
150
ANNEAL
TOTAL DOSE (krad(Si))
FIGURE 41. ISL71840SEH input HIGH voltage, average of four addresses and ENABLE, as a function of total dose irradiation at high dose rate for
the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low
dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The
postirradiation SMD limits are 1.2V to 1.6V.
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Test Report 010
Conclusion
This document reports interim results of a total dose test of the
ISL71840SEH 16-channel analog multiplexer. Parts were tested at
low dose rate underbiased and unbiased conditions and at high
dose rate underbiased conditions as outlined in MIL-STD-883 Test
Method 1019.7. The high dose rate samples were taken through
150krad(Si) and biased anneal; the low dose rate samples are at
100krad(Si) at this time and will be continued through 150krad(Si)
and anneal.
ATE characterization testing at downpoints showed no rejects to
the SMD Group A limits for biased irradiation at high dose rate
and biased and grounded irradiation at low dose rate, with the
high dose rate irradiations followed by a 100 hours biased
anneal for 168 hours.
The attributes data is presented in Table 1, while the variables
data for selected parameters is presented in Figures 3 through
41.
As a determinant of low dose rate sensitivity, MIL-STD-883 Test
Method 1019.7 specifies that a delta_parameter calculation be
performed for any parameters that exceed the Group A limits.
These calculations were not required as there were no rejects
against the Group A limits. Accordingly, the part is considered
ELDRS insensitive up to 150krad(Si).
Similarly, no differences between biased and unbiased
irradiation were noted, and the part is not considered bias
sensitive.
TABLE 2. REPORTED PARAMETER
FIGURE
PARAMETER
LIMIT LOW
LIMIT HIGH
UNIT
NOTES
3
Positive Supply Current
-
350
µA
4
Negative Supply Current
-350
-
µA
5
Positive Standby Supply Current
-
350
µA
6
Negative Standby Supply Current
-350
-
µA
7
Supply Current Into VREF
-
35
µA
8
Switch ON-resistance, Average
-
500
Ω
VIN = 5V
9
Switch ON-resistance, Average
-
500
Ω
VIN = -5V
10
Switch ON-resistance, Average
-
700
Ω
VIN= 15V
11
Switch ON-resistance, Average
-
700
Ω
VIN = -15V
12
ON-resistance match, Average
-
20
Ω
VIN = 5V
13
ON-resistance Match, Average
-
20
Ω
VIN = -5V
14
OFF Source Leakage, Average
-100
100
nA
VIN = 11.5V
15
OFF Source Leakage, Average
-100
100
nA
VIN = -11.5V
16
OFF Source Leakage, Average
-750
750
nA
35V overvoltage
17
OFF Source Leakage, Average
-750
750
nA
-35V overvoltage
18
OFF Drain Leakage, Average
-500
500
nA
Power off, 35V overvoltage
19
OFF Drain Leakage, Average
-500
500
nA
Power off, -35V overvoltage
20
ON Source Leakage, Average
-500
500
nA
35V overvoltage
21
ON Source Leakage, Average
-500
500
nA
-35V overvoltage
22
OFF Source Leakage, Average
-100
100
nA
Power off
23
OFF Source Leakage, Average
-100
100
nA
Power off
24
ON Drain Leakage, Average
-100
100
nA
Source and drain at 10V
25
ON Drain Leakage, Average
-100
100
nA
Source and drain at -10V
26
ON Source Leakage
-80
80
nA
Part disabled
27
ON Source Leakage
-80
80
nA
Part disabled
28
Access Time, LOW-to-HIGH
-
800
ns
±15V supplies
29
Access Time, HIGH-to-LOW
-
800
ns
±15V supplies
30
Break-before-make Time
5
400
ns
±15V supplies
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TABLE 2. REPORTED PARAMETER (Continued)
FIGURE
PARAMETER
LIMIT LOW
LIMIT HIGH
UNIT
NOTES
31
Enable ON to Output Delay
-
800
ns
±15V supplies
32
Enable OFF to Output Delay
-
800
ns
±15V supplies
33
Access time, LOW-to-HIGH
-
800
ns
±12V supplies
34
Access time, HIGH-to-LOW
-
800
ns
±12V supplies
35
Break-before-make Time
5
400
ns
±12V supplies
36
Enable ON to Output Delay
-
800
ns
±12V supplies
37
Enable OFF to Output Delay
-
800
ns
±12V supplies
38
Input HIGH Current, Average
-100
100
nA
A0–A3 and ENABLE
39
Input LOW Current, Average
-100
100
nA
A0–A3 and ENABLE
40
Input LOW Voltage, Average
1.2
1.6
V
A0–A3 and ENABLE
41
Input HIGH Voltage, Average
1.2
1.6
V
A0–A3 and ENABLE
NOTE:
3. Limits are taken from Standard Microcircuit Drawing (SMD) 5962-15219.
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the document is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
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