isl72027seh see test report

Test Report 018
Single Event Effects (SEE) Testing of the ISL72027SEH
CAN Transceiver
Introduction
The intense proton and heavy ion environment encountered in
space applications can cause a variety of Single Event Effects
(SEE) in electronic circuitry, including Single Event Upset (SEU),
Single Event Transient (SET), Single Event Functional Interrupt
(SEFI), Single Event Gate Rupture (SEGR) and Single Event
Burnout (SEB). SEE can lead to system-level performance
issues including disruption, degradation and destruction. For
predictable and reliable space system operation, individual
electronic components should be characterized to determine
their SEE response. This report discusses the results of SEE
testing performed on the ISL72027SEH CAN transceiver.
Product Description
The ISL72026SEH, ISL72027SEH and ISL72028SEH are a
family of radiation tolerant Controller Area Network (CAN) bus
transceivers. These parts are designed to meet ISO11898-2
physical layer specifications. They are fabricated in Intersil's
proprietary BCD SOI process with deep trench isolation. The
ISL7202xSEH parts are bond options of the same silicon die.
Further description and explanation of the differences
between the parts can be found in the datasheets.
Product Documentation
• ISL72026SEH datasheet
• ISL72027SEH datasheet
• ISL72028SEH datasheet
• Standard Microcircuit Drawing (SMD): 5962-15228
SEE Test Objectives
The ISL72027SEH was tested to determine its susceptibility to
destructive single event effects (collectively referred to as SEB)
and to characterize its Single Event Transient (SET) behavior
over various operating conditions. Since the family of parts
utilizes the same silicon with only bond-out options, it was
determined that testing the ISL72027SEH would serve to
characterize all three parts. More description of the part
differences follows in the next two paragraphs. Thereafter the
report will refer only to the ISL72027SEH with the
understanding that the results apply equally to the other two
members of the family, the ISL72026SEH and ISL72028SEH.
The ISL72026SEH and ISL72027SEH differ in that the
Loopback (LBK) command input of the ISL72026SEH is not
bonded out in the ISL72027SEH. Instead, VREF is bonded out
in the ISL72027SEH. All other pins and functions are the
same. Since the LBK has an internal pull-down, the LBK
function is constantly deasserted in the ISL72027SEH, but the
LBK circuitry is fully active and available to SEE events that
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TR018.1
1
could cause LBK to be momentarily asserted. On the other
hand, the VREF circuitry is fully active in the ISL72026SEH,
however, is simply not brought out to the outside world.
Consequently, all that is lost in testing the ISL72027SEH rather
than the ISL72026SEH is that the part is not tested while in
the LBK mode. Since this is a diagnostic mode and is expected
to be active only a very small fraction of the operational life, it
does not seem to represent a statistically important mode for
SEE events. The jeopardy is that an SET could momentarily
take the part out of LBK, however, this would be an extremely
unlikely event if LBK is not a dominant operational mode.
The ISL72028SEH differs from the ISL72027SEH in that the
RS pin when pulled to VCC can invoke a Low Power Shutdown
(LPSD) mode rather than the Listen Mode (LM) of the
ISL72027SEH. Both circuits are operational in both parts; it is
just that a pin control is only effective according to the part
type. So, if either the LM or LPSD can be activated by SEE,
either circuit would be susceptible. What is lost in testing the
ISL72027SEH is the event where an SET triggers the
ISL72028SEH out of LPSD. Such an event would be of little
interest to the operation of the system so it is not perceived as
an important omission.
SEE Test Facility
Testing was performed at the Texas A&M University (TAMU)
Radiation Effects Facility of the Cyclotron Institute heavy ion
facility. This facility is coupled to a K500 superconducting
cyclotron, which is capable of generating a wide range of
particle beams with the various energy, flux and fluence levels
needed for advanced radiation testing. The Devices Under Test
(DUTs) were located in air at 40mm from the aramica window
for the ion beam. The ion LET values are quoted at the DUT
surface. Signals were communicated to and from the DUT test
fixture through 20 foot cables connecting to the control room.
Testing was carried out over four trips to TAMU, on November
7th and 8th of 2014, December 1st of 2014, March 18th of
2015 and June 2nd of 2015.
SEE Test Set-Up
SEE testing was carried out with the samples in an active
configuration. The schematic of the ISL72027SEH SEE test
fixture used in 2015 is shown in Figure 1. This schematic
shows direct access to the CANH/CANL bus pins for monitoring
and indirect access through 30Ω resistors for biasing. These
resistor feeds were not there in the 2014 testing so that bus
bias and monitor were done through the same lines. The
cabling connected to the CANH/CANL pins present 700pF to
GND due to the 20 foot cable connecting the DUT to the
oscilloscopes in the control room for SET testing. Other
supplies and signals indicated by arrows were also cabled to
the control room.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015, 2016. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
Test Report 018
Two instantiations of the schematic on a single board allowed
two ISL72027SEH to be simultaneously irradiated for SEE
testing. The two parts were monitored separately. Parts were
packaged in the flatpack and had their lids removed for the SEE
testing. For SEB, the parts' key currents and VREF voltage were
monitored before and after irradiation to determine if any
change had been induced. For SET testing, the outputs of the
CAN bus (CANH and CANL) and the received signal, R, were
monitored. In static SET testing any change in R triggered an
oscilloscope capture. In dynamic SET testing the bus and receiver
were monitored for changes in the bit stream resulting from the
provided input signal. For dynamic inputs, if the received bit
stream, R, deviated from its nominal duty cycle (nominally 50%,
triggered at either ±10% from there) an oscilloscope capture was
triggered and the event was stored for later review.
The parts tested in 2014 came from lot J66594.1
(part # B2330-X18). The parts tested were all modified in metal by
Focused Ion Beam (FIB) techniques to correct two problems seen
on these first parts:
• Receiver transition glitches
• Low CANH/CANL breakdowns
These changes are metal fixes instituted in the final product so the
FIB modified units accurately represent the final product. The parts
tested in 2015 came from lot J66594.2 (part # B2330-X28) and
had the metal changes incorporated in manufacture that were
previously done by FIB. The latter parts are the production product.
RS
30O
CANH
50kO
330O

1
D
D
RS
8
30O
1nF
2
PGND
22µF
0.1µF
VCC
GND
CANH
7
ISL72027SEH
3
VCC
30O
50pF
CANL
K1
6
330O
325O
VR
4
15pF
R
VREF
5
47nF
K2
30O
CANL
R
SGND
K2 CONTROL
K1 CONTROL
VCM
Note: The VREF can be monitored at the external connection VCM when K2 is closed and K1 is open
FIGURE 1. Schematic of the ISL72027SEH see test configuration used in 2015. Connection to CANH/CANL through resistors allows setting BUS
voltage while direct connections allow monitoring bus voltage at the unit.
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Test Report 018
March 2015 SEB Testing of the
ISL72027SEH CAN Transceiver
with a similar set done with common-mode voltages of ±17V
before moving on to the ±18V set reported here. The device case
temperature was heated to +125°C ±10°C for the irradiations
with a thin film heater mounted on the board. The heater setting
was calibrated with a thermocouple on the case at the Intersil lab
before traveling to TAMU. At TAMU the heater was set to the
predetermined setting to yield the +125°C case temperature. At
the end of the six irradiations outlined in Table 2 the monitor
parameter measurements of Table 1 were repeated to check for
changes.
Four units of the ISL72027SEH were irradiated for the purposes
of destructive SEE (SEB) testing. Four currents and the VREF
output voltage were monitored as in Table 1 on page 4 to
determine if permanent change was induced during irradiations.
After initial measurements according to Table 1, a set of six
irradiations was performed as listed in Table 2 on page 4. Each
irradiation was done with 2.114GeV Pr (praseodymium) at 10°
incidence for a surface LET = 60MeV•cm2/mg to a fluence of
5x106 ion/cm2 per irradiation at fluxes under 2.5x104
ion/(cm2*s). The ICC and ICM were measured before and after
each irradiation to look for indications of damage in changes of
those parameters. At the end of the set of six irradiations the
parameters in Table 1 were again measured to look for any
changes.
Table 3 presents the log of the ICC and ICM measurements made
for each irradiation run at the conditions described in Table 2.
The same data is presented in Table 4 on page 5 as the
percentage change in the measured currents. Changes of less
than 5% were considered to be within measurement error and
not interpreted as indicative of damage. Table 5 on page 5
presents the measurements of monitor parameters in Table 1
made both before and after the groupings of six irradiations.
Table 6 on page 5 presents the monitor data of Table 5 as
percentage change. Again changes of 5% or less are viewed as
within measurement error. On the basis of these tests the part is
found to be free of damaging SEE up to LET = 60MeV•cm2/mg
(Pr at 10º incidence) and the conditions listed in Table 2.
The 50kHz data signal allowed for the common-mode voltage to
dominate the bus pins during the recessive periods but still
exercised switching conditions. Figures 2 and 3 offer examples of
the timing requiring the 50kHz input signal. The 47nF capacitor
on VREF and the resistors in the VCM path were what set the time
constant of the common-mode voltage. The complement of six
irradiations accounted for 58krad of total dose when combined
R 2V/DIV
CANH 5V/DIV
CANL 5V/DIV
CANH - CANL 5V/DIV
5µs/DIV
FIGURE 2. Example of CANH/CANL switching at 50kHz, VCC = 3.6V and a common-mode of -7V. Time allows recessive state to stabilize at -7V for the
CANH/CANL lines. Time scale is 5µs/div, and the vertical axis is 2V/div for the upper plot and 5V/div for the lower three plots.
R 2V/DIV
CANH 5V/DIV
CANL 5V/DIV
CANH - CANL 5V/DIV
5µs/DIV
FIGURE 3. Example of CANH/CANL switching at 50kHz, VCC = 3.6V, and a common-mode of +12V. Time allows recessive state to stabilize at +12V for
the CANH/CANL lines. Time scale is 5µs/div, and the vertical axis is 2V/div for the upper plot and 5V/div for the lower three plots.
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Test Report 018
TABLE 1. MONITOR MEASUREMENTS AND CONDITIONS FOR SEB DETECTION
ELECTRICAL CONDITONS FOR MEASUREMENT
MEASUREMENTS
MADE
RS
(V)
D
VCC
(V)
VR
(V)
K1
K2
VCM
(V)
CANH
CANL
R
ICM (µA) at VCM = -7V
0
4.5
3.6
OP
CL
OP
-7
CH2
CH3
OP
ICM (µA) at VCM = +12V
0
4.5
3.6
OP
CL
OP
+12
CH2
CH3
OP
VREF at VCM (V)
0
4.5
3.6
OP
OP
CL
Meas.
VREF
CH2
CH3
OP
ICC (mA) Dynamic Unloaded
0
0V to 4.5V
250kHz
3.6
OP
OP
OP
OP
CH2
CH3
OP
ICC (mA) Dynamic Loaded
Slow
OP
0V to 4.5V
250kHz
3.6
1.7V
CL
CL
OP
CH2
CH3
OP
Scope Capture Loaded Slow,
2µs/div
OP
0V to 4.5V
250kHz, CH1
3.6
1.7V
CL
CL
OP
CH2
CH3
CH4
NOTE: OP = Open and CL = Closed. Measurements of these parameters were made at the start and end of the six SEB tests listed in Table 2. Oscilloscope
channels are indicate by “CH”.
TABLE 2. SEB TESTS RUN ON ISL72027 DURING THE MARCH 2015 TESTING
RS
(V)
D
VCC
(V)
K1
K2
VCM
(V)
Cold Spare -18VCM
0
0V to 4.5V 50kHz
0
CL
CL
-18
Cold Spare +18VCM
0
0V to 4.5V 50kHz
0
CL
CL
+18
Fast Op -18VCM
0
0V to 4.5V 50kHz
4.5
CL
OP
-18
Fast Op +18VCM
0
0V to 4.5V 50kHz
4.5
CL
OP
+18
Slow Op -18VCM
OP
0V to 4.5V 50kHz
4.5
CL
CL
-18
Slow Op +18VCM
OP
0V to 4.5V 50kHz
4.5
CL
CL
+18
TABLE 3. SUPPLY CURRENT MONITORS ICC AND ICM FOR EACH IRRADIATION WITH Pr AT 10°FOR LET of 60MeV•cm2/mg TO 5x106 ion/cm2 FOR
EACH IRRADIATION.
DUT1
IRRADIATION CONDITION
VCC = 4.5V
Cold Spare
VCM = -18V
Cold Spare
VCM = +18V
Fast Op
VCM = +18VN
Fast Op
VCM = -18V
Slow Op
VCM = -18V
Slow Op
VCM= +18V
ICC
(mA)
DUT2
ICM
(mA)
ICC
(mA)
DUT3
ICM
(mA)
ICC
(mA)
DUT4
ICM
(mA)
ICC
(mA)
ICM
(mA)
Pre
0.0076
0.0075
0.0075
0.0075
Post
0.0075
0.0073
0.0075
0.0075
Pre
0.0075
0.0077
0.0075
0.0075
Post
0.0075
0.0076
0.0074
0.0075
Pre
3.24
7.85
3.67
8.39
3.26
8.16
3.7
7.48
Post
3.25
7.83
3.65
8.40
3.246
8.22
3.69
7.49
Pre
13.01
9.26
14.53
10.37
14.17
10.43
13.26
9.10
Post
13.16
9.31
14.53
10.39
14.14
10.39
13.27
9.11
Pre
8.08
4.88
8.61
5.00
8.39
5.21
8.72
5.05
Post
8.08
4.89
8.61
5.01
8.4
5.22
8.72
5.05
Pre
3.36
51.07
3.71
52.35
3.48
52.60
3.76
54.00
Post
3.33
51.80
3.72
52.5
3.38
52.09
3.74
53.53
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Test Report 018
TABLE 4. SUPPLY CURRENT MONITOR DELTAS (ICC AND ICM) FOR EACH IRRADIATION WITH Pr AT 10° FOR LET OF 60MeV•cm2/mg TO
5x106ion/cm2 FOR EACH IRRADIATION.
DUT1
IRRADIATION CONDITION
VCC = 4.5V
ICC
DELTA%
DUT2
ICM
DELTA%
ICC
DELTA%
DUT3
ICM
DELTA%
ICC
DELTA%
DUT4
ICM
DELTA%
ICC
DELTA%
ICM
DELTA%
Cold Spare -18VCM
-1
-3
0
0
Cold Spare +18VCM
0
-1
-1
0
Fast Op +18VCM
0
0
-1
0
0
1
0
0
Fast Op -18VCM
1
1
0
0
0
0
0
0
Slow Op -18VCM
0
0
0
0
0
0
0
0
Slow Op +18VCM
-1
1
0
0
-3
-1
-1
-1
TABLE 5. PARAMETRIC MONITORS FOR EACH SET OF IRRADIATIONS
DUT1
DUT2
DUT3
DUT4
ICM (µA) AT
VCM = -7V
ICM (µA) AT
VCM = +12V
VREF AT
VCM (V)
ICC (mA)
UNLOADED FAST
ICC (mA)
LOADED SLOW
Pre
608
652
1.773
4.11
24.10
Post
604
649
1.772
4.10
24.05
Pre
604
652
1.769
4.51
24.38
Post
600
649
1.768
4.51
24.45
Pre
598
645
1.773
4.11
24.90
Post
600
644
1.775
4.12
25.14
Pre
609
657
1.772
4.55
25.05
Post
611
656
1.774
4.54
25.11
NOTE: Refer to Table 2 on page 4. Irradiation was with Pr at 10° incidence for effective let of 60MeV•cm2/mg and each set of irradiations having a total
of 3x107ion/cm2.
TABLE 6. DELTAS OF PARAMETRIC MONITORS FOR EACH SET OF IRRADIATIONS
ICM (µA) AT
VCM = -7V
(%)
ICM (µA) AT
VCM = +12V
(%)
VREF AT VCM
(V%)
ICC (mA)
UNLOADED FAST (%)
ICC (mA)
LOADED
SLOW (%)
DUT1
-1
0
0
0
0
DUT2
-1
0
0
0
0
DUT3
0
0
0
0
1
DUT4
0
0
0
0
0
NOTE: Refer to Table 2 on page 4. Irradiation was with Pr at 10°incidence for effective let of 60MeV•cm2/mg and each set of irradiations having
3x107ion/cm2.
Tables 5 and 6 present the collected data for the parameters of
Table 1 across the irradiation sets. Again no change was noted
that indicated permanent damage to the parts.
It was deduced from the above testing that the ISL72027SEH
was found to be free from destructive SEE effects from ions with
effective LET of 60MeV•cm2/mg while biased at VCC = 4.5V and
VCM = ±18V.
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Test Report 018
SET Testing of the ISL72027SEH
CAN Transceiver at Ag
(LET = 43MeV•cm2/mg)
Testing for Single Event Transients (SET) was carried out using
silver (Ag) at 1.634GeV for a surface LET = 43MeV•cm2/mg.
Beam time constraints on the trip limited the testing to only two
units. A summary of the conditions tested and the SET counts
resulting appear in Table 7. Examples of the SET captured in the
irradiation runs appear in Figures 4 through 7.
There were stand-alone errant recessive bits of approximately
2µs duration at 43MeV•cm2/mg as well as spike recessive
events seen in Figure 4. These occurred for the bus VOD biased
externally at the receiver dominant threshold of 0.9V.
The events in Figure 5 are errant dominant spikes occurring on
the R output, either with or without concomitant disruption on
the VOD signal. In these cases, the bus VOD was externally
biased to 0.5V, the receiver recessive threshold. When
disturbances on VOD were noted, the erroneous dominant spikes
generally came in pairs as on the left side to Figure 5, following
the ringing on VOD.
The dynamic testing was done by providing a square wave input
to the D pin (0V to 3V) and monitoring the response of the
receiver R pin signal. When the transceiver was set to the slow
slew rating of the transmitter, a frequency of 250kHz was used.
When the transceiver was set for fast slewing of the transmitter a
500kHz signal was used, except in the two inadvertent cases of
lines eleven and twelve of Table 7.
Figures 6 and 7 present examples of the worst dynamic SET that
were captured using silver.
The two events represented in the top of Figure 6 have clear
disturbances on VOD associated with the disruption of the bit
stream on R. As with the static tests, these appear to be
transmitter SET that are simply reflected in the receiver output.
The bottom event in Figure 6 is not clearly associated with a VOD
disturbance, however, it certainly occurs during a VOD transition
and at the received bit edge. Again a transmitter SET seems to
be indicated.
For the high speed events in Figure 7, each SET on R is
accompanied by what appears to be a precipitating SET on the
VOD signal. Thus, these are all consistent with transmitter events
and not receiver SET.
TABLE 7. STATIC CAPTURES AND DYNAMIC SET CAPTURES
DUT1
EVENTS
DUT2
EVENTS
DUT2
TOTAL EVENTS
NET CROSS
SECTION
(cm2)
VOD Dominant V THR 0.9V
18
14
32
8.0x10-6
VOD Recessive V THF 0.5V
42
51
93
2.3x10-5
Listen only, VOD Dominant V THR 1.05V
0
0
0
--
Listen only, VOD Recessive VTHF 0.65V
0
0
0
--
Transmit Slow 250kHz Open CM and VREF
9
14
23
5.8x10-6
Transmit Slow 250kHz Open CM
13
15
28
7.0x10-6
Transmit Slow 250kHz -7VCM and VREF
21
16
37
9.3x10-6
Transmit Slow 250kHz -7VCM
17
15
32
8.0x10-6
Transmit Slow 250kHz +12VCM and VREF
10
6
16
4.0x10-6
Transmit Slow 250kHz +12VCM
5
4
9
2.3x10-6
Transmit Slow 500kHz Open CM and VREF
83
87
170
4.3x10-5
Transmit Slow 500kHz Open CM
95
76
171
4.3x10-5
Transmit Fast 500kHz -7VCM and VREF
12
4
16
4.0x10-6
Transmit Fast 500kHz -7VCM
2
7
9
2.3x10-6
Transmit Fast 500kHz +12VCM and VREF
2
2
4
1.0x10-6
Transmit Fast 500kHz +12VCM
1
4
5
1.3x10-6
TEST CONDITIONS
NOTE: Static captures were for any change of R state, while dynamic captures were taken for R duty cycle outside of 40% to 60%. The irradiations were
with Ag at normal incidence for an LET = 43MeV•cm2/mg and the device at ambient temperature (~25ºC). A fluence of 2x106ions/cm2 was done for
each irradiation.
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3.5
3.5
3.0
3.0
2.5
2.5
2.0
2.0
SIGNALS (V)
SIGNALS (V)
Test Report 018
1.5
1.0
1.5
1.0
0.5
0.5
0
0
-0.5
-0.5
-1
0
1
2
3
4
-1
0
1
2
3
4
TIME (µs)
TIME (µs)
FIGURE 4A.
FIGURE 4B.
3.5
3.5
3.0
3.0
2.5
2.5
2.0
2.0
SIGNALS (V)
SIGNALS (V)
FIGURE 4. The left hand SET (Figure 4A) goes from dominant to recessive with no apparent SET on VOD (5/32 in 4x106 fluence). The case on the
right (Figure 4B) shows recessive spikes along with a disturbance on VOD and accounted for 27/32 events captured in 4x106 fluence.
1.5
1.0
1.5
1.0
0.5
0.5
0
0
-0.5
-0.5
-1
0
1
2
TIME (µs)
FIGURE 5A.
3
4
-1
0
1
2
3
4
TIME (µs)
FIGURE 5B.
FIGURE 5. The left hand SET (Figure 5A) shows dominant spikes in R along with an SET on VOD (17/93). In the right hand (Figure 5B) case a single
dominant spike is unaccompanied by and discernable VOD SET (76/93). The fluence is 4x106.
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4
4
3
3
SIGNALS (V)
SIGNALS (V)
Test Report 018
2
1
0
-1
2
1
0
-20
-10
0
10
-1
20
-20
-10
TIME (µs)
FIGURE 6A. TRANSMIT SLOW OPEN CM
0
TIME (µs)
10
20
FIGURE 6B. TRANSMIT SLOW OPEN CM AND VREF
4
SIGNALS (V)
3
2
1
0
-1
-20
-10
0
10
20
TIME (µs)
FIGURE 6C. TRANSMIT SLOW -7VCM AND VREF
FIGURE 6. The longest recessive event is in the upper left (Transmit Slow Open CM) and the longest dominant event is the upper right (transmit
slow open CM and VREF). The bottom capture shows a glitch at the leading edge of a recessive bit (transmit slow -7VCM and VREF).
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4
4
3
3
SIGNALS (V)
SIGNALS (V)
Test Report 018
2
1
1
0
0
-1
2
-1
-5
0
TIME (µs)
-5
5
0
TIME (µs)
5
FIGURE 7B. TRANSMIT FAST OPEN CM
FIGURE 7A. TRANSMIT FAST -7VCM AND VREF
4
SIGNALS (V)
3
2
1
0
-1
-5
0
TIME (µs)
5
FIGURE 7C. TRANSMIT FAST -7VCM AND VREF
FIGURE 7. The upper left (Figure 7A) shows the longest recessive time (Transmit Fast -7VCM and VREF), the upper right (Figure 7B) the longest
dominant time (transmit fast open CM). The lower capture (Figure 7C) shows a dominant spike during a recessive bit (transmit fast
-7VCM and VREF). The plot at upper right (Figure 7B) indicates that the transition speed was not actually set to the high speed setting.
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SET Testing of the ISL72027SEH
CAN Transceiver at Cu
(LET = 20MeV•cm2/mg)
Since SET occurred for LET = 43MeV•cm2/mg tests were run at
the lower LET = 20MeV•cm2/mg using copper. The biasing
conditions run were restricted to exclude common-mode biasing
cases since in the higher LET testing the common-mode
conditions did not substantially influence the SET observations.
The tests run and the event counts appear in Table 8 while
examples of the worst SET observed follow in Figures 8 through
10.
In the case of Figure 8, the SETs on R are all associated with
preceding disturbances on VOD that indicate an SET to the
transmitter that impacts the VOD. In these cases, the SET on R is
a response to a transmitter SET and not a receiver SET. The
ringing on VOD is certainly the result of the cabling used to
monitor the VOD voltage. In total, the cross section of these
events on four parts is approximately 3.22x10-6cm2
Figure 9 looks at dominant SET occurring when the bus is biased
at the recessive threshold of 0.5V. In this case, two distinct types
of SET seem to occur. The first is a double spike with a preceding
disturbance on the bus (VOD). This would appear to be a
transmitter SET that is simply reflected in the receiver output.
The second case is a single dominant spike that does not appear
to be associated with any real disturbance on the bus (VOD). This
would appear to be a genuine receiver SET. Both types of events
disappear when the bus is left open rather than being biased to
the recessive threshold value.
Figure 10 looks at the worst SET occurring with a dynamic bit
stream being transmitted with no common-mode. The first two
plots are for a 250kHz input signal (500kbit/s alternating 1's and
0's) with slow bus transitions while the third plot is for 500kHz
with fast transitions selected. The only events recorded on R
were dominant glitches associated with the edges of the bits
when the bus (VOD) was in a transition. The SET were all
associated with distortions on the VOD waveform and so are
believed to originate in the transmitter.
TABLE 8. SET TESTING AT LET = 20MeV•cm2/mg AND FLUENCE OF 1x107ion/cm2 FOR EACH RUN
DUT1
EVENTS
DUT2
EVENTS
DUT3
EVENTS
DUT4
EVENTS
CROSS SECTION
(cm2)
VOD Dominant at 1V
20
32
38
39
3.2x10-6
VOD Dominant V THR 0.9V
38
45
VOD Recessive V THF 0.5V
65
47
Transmit Dominant Open CM
0
0
--
Transmit Recessive Open CM
0
0
--
Transmit Slow (250kHz) Open CM
13
10
3
9
8.8x10-7
Transmit Fast (500kHz) Open CM
362*
85*
3
4
3.5x10-7
TEST CONDITIONS
4.2x10-6
71
78
6.5x10-6
NOTE: The runs marked with an asterisk (*) were accidentally run at slow transition speeds but at higher data rate; this accounts for the higher event
counts.
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3.5
3.5
3.0
3.0
2.5
2.5
2.0
2.0
SIGNALS (V)
SIGNALS (V)
Test Report 018
1.5
1.0
1.5
1.0
0.5
0.5
0
0
-0.5
-1
-0.5
0
TIME (µs)
0.5
-0.5
-1
1
-0.5
0
TIME (µs)
0.5
1
FIGURE 8B.
FIGURE 8A.
3.5
3.5
3.0
3.0
2.5
2.5
2.0
2.0
SIGNALS (V)
SIGNALS (V)
FIGURE 8. Examples of dominant to recessive SET for a dominant threshold (0.9V) on the bus. For DUT1 the double spikes on the left plot
(Figure 8A) represented 21/38 events; the single spikes on the right (Figure 8B) represented the other 17/38 events. The total fluence
at LET = 20MeV•cm2/mg was 1x107ion/cm2. For all events the SET on VOD preceded the SET on R.
1.5
1.0
1.5
1.0
0.5
0.5
0
0
-0.5
-1
-0.5
-0.5
0
TIME (µs)
FIGURE 9A.
0.5
1
-1
-0.5
0
TIME (µs)
0.5
1
FIGURE 9B.
FIGURE 9. Examples of recessive to dominant SET from DUT1 for recessive threshold (0.5V) on the bus. The double spikes on the left plot
(Figure 9A) represented 21/65 events; the single spikes on the right (Figure 9B) represented the other 44/65 events. The total
fluence per run at LET = 20MeV•cm2/mg was 1x107cm2. Only the double spikes on the left showed clear VOD SET preceding the R
SET. The single spikes appear not to have an associated VOD event.
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3.5
3.5
3.0
3.0
2.5
2.5
2.0
2.0
SIGNALS (V)
SIGNALS (V)
Test Report 018
1.5
1.0
1.5
1.0
0.5
0.5
0
0
-0.5
-0.5
-5
0
TIME (µs)
5
-5
0
TIME (µs)
FIGURE 10A.
5
FIGURE 10B.
3.5
3.0
SIGNALS (V)
2.5
2.0
1.5
1.0
0.5
0
-0.5
-5
0
TIME (µs)
5
FIGURE 10C.
FIGURE 10. Examples of SET during data transmission. The top events (Figures 10A and 10B) are for slow transmission (DUT1 and DUT2) and the
bottom (Figure 10C) is fast transmission (DUT3). The SET exhibit VOD transients during transition that result in false dominant SET on
the R output. The total fluence per run at LET = 20MeV•cm2/mg was 1x107cm2. The top plots (Figures 10A and 10B) indicate that
SET can occur on either transition of the VOD. Unlike results at LET = 43MeV•cm2/mg there were no missing bits of either state.
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Test Report 018
SET Testing of the ISL72027SEH
CAN Transceiver at LET = 8.5 and
2.7MeV•cm2/mg
SET testing was again done on the ISL72027SEH with Ar
(LET = 8.5MeV•cm2/mg) and Ne (LET = 2.7MeV•cm2/mg). With
argon, events were only recorded for the case of the bus
operating at the dominant threshold of 0.9 V and for dynamic
operation as represented in Table 9. With neon,
(2.7MeV•cm2/mg) no SET at all were observed. Again beam
time constraints limited only two units being tested.
dominant state would not cause a transient sufficient to result in
bus ringing to invoke a recessive state on the receiver.
The dynamic SET were almost non-existant with only four being
recorded for the fast slew setting. All four look quite similar and
are represented in the top two plots of Figure 12. In the first plot
Figure 12A no apparent disturbance can be discerned in the VOD
trance, while in the second plot Figure 12B a clear glitch in the
VOD trace is evident. In both cases the R transition from dominat
to recessive is interruped by a spike back to dominant. The
spikes occur during the transition and are on the order of 100ns
in duration. The third SET (bottom of Figure 12C) shows a clear
VOD glitch on the slower slew rate transition of the VOD signal.
For the static SET observed with VOD = 0.9V (dominant
threshold), there were observed recessive spikes, either single or
double spikes, as depicted in Figure 11. Twenty five of the
fifty-eight SET observed were of the double spike variety. All the
observed SET began with what appears to be an attempt of the
transmitter to assert a dominant state on the CAN bus (rise in
VOD) followed by some ringing on the bus that was interpreted by
the receiver as being a recessive state. This is consistent with no
SET being observed for an applied VOD of 1.5V, where the errant
TABLE 9. RESULTS FOR SET TESTING WITH LET = 8.5MeV•cm2/mg (Ar) TO 1x107ion/cm2 PER RUN
DUT1 EVENTS
DUT2
EVENTS
TOTAL
EVENTS
CROSS SECTION
(cm2)
Recessive Xmit Open Bus, High Slew
0
0
0
--
Recessive Xmit Open Bus, Medium Slew
0
0
0
--
Dominant Xmit Open Bus, High Slew
0
0
0
--
Dominant Xmit Open Bus, Medium Slew
0
0
0
--
VCANH = 1.9V, VCANL = 1.0V, High Slew
29
29
58
2.9x10-6
VCANH = 1.9V, VCANL = 1.0V, Medium Slew
31
31
62
3.1x10-6
VCANH = 2.5V, VCANL = 1.0V, High Slew
0
0
0
--
VCANH = 2.5V, VCANL = 1.0V, Medium Slew
0
0
0
--
Transmit 500kHz, Fast, No CM or VREF
4
0
4
2x10-7
Transmit 500kHz, Medium, No CM or VREF
1
0
1
5x10-8
4
4
3
3
SIGNALS (V)
SIGNALS (V)
TEST CONDITIONS
2
1
0
2
1
0
-1
-1
-1
0
1
2
TIME (µs)
FIGURE 11A.
3
4
-1
0
1
2
3
4
TIME (µs)
FIGURE 11B.
FIGURE 11. Example SET for LET = 8.5MeV•cm2/mg with VCANH = 1.9V AND VCANL = 1V (VOD = 1.5V).
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4
4
3
3
SIGNALS (V)
SIGNALS (V)
Test Report 018
2
1
2
1
0
-1
0
-1
0
1
2
3
-1
4
-1
0
1
TIME (µs)
2
3
4
TIME (µs)
FIGURE 12B.
FIGURE 12A.
4
SIGNALS (V)
3
2
1
0
-1
-1
0
1
2
3
4
TIME (µs)
FIGURE 12C.
FIGURE 12. Examples of dynamic SET at LET = 8.5MeV•cm2/mg for fast slew (Figures 12A and 12B) and for medium slew (Figure 12C).
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Test Report 018
Discussion and Conclusions
Damaging SEE
Testing of the ISL72027SEH at case temperatures of +125ºC
±10ºC and 60MeV•cm2/mg did not yield damaging SEE effects
with a supply of VCC = 4.5V and the CAN bus common-mode
(CANH, CANL) at ±18V. The tests were run on four parts to 5x106
ions/cm2 on each of six irradiation runs per part including both
polarities of common-mode for cold sparing, and for fast and
slow transmitter slewing. Consequently it is concluded that the
part is immune to damaging SEE effects at 60MeV•cm2/mg
while operating at or below the voltages of VCC = 4.5V and bus
common-mode voltages of ±18V.
Single Event Transients
With the bus externally biased to the recessive threshold of 0.5V,
SET consisting of receiver dominant spikes as in Figure 5 were
noted. Most of these SET correlated to VOD disturbances
indicating a transmitter SET as the initiating event, though some
of the shortest events where not accompanied by a VOD
disturbance. At an LET of 20MeV•cm2/mg these events had a
cross-section of 6.5x10-6cm2.
Dynamic testing of the part for SET resulted in missing bits at the
receiver as in Figures 6 and 7 for 43MeV•cm2/mg. At LET of
20MeV•cm2/mg and below dynamic testing only resulted in
glitches on the transitions of the bits as in Figures 10 and 12. At
LET of 8.5MeV•cm2/mg the cross-section for these SET was
2.0x10-7cm2. At LET of 2.7MeV•cm2/mg there were no SET
recorded to a nominal 5x10-8cm2.
The ISL72027SEH exhibited SET susceptibility at LET = 43, 20
and 8.5MeV•cm2/mg. SET was defined as any transition in the
receiver output for static biasing conditions and any received bit
outside of 40% to 60% duty-cycle for a 50% transmitted bit
stream. No SET of either type were recorded at an
LET = 2.7MeV•cm2/mg.
At the higher LET level (43MeV•cm2/mg), SET represented by
Figure 4A were noted. The receiver dominant signal was
interrupted for nearly 2µs by an errant recessive received signal
while the bus was being externally biased to 0.9V. This type of
SET represented a cross-section at 43MeV•cm2/mg of
approximately 1.3x10-6cm2. This type of event disappeared at
LET = 20MeV•cm2/mg and below.
The form of SET depicted in Figure 4B, a recessive receiver spike
or double spike during a dominant bus voltage of 0.9V, occurred
for LET down to 8.5MeV•cm2/mg with a cross-section down to
3.0x10-6cm2 at that LET. These events disappeared at LET =
2.7MeV•cm2/mg to yield a cross-section limit of 5x10-8 cm2.
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Test Report 018
TABLE 10. SEB TESTS RUN ON ISL72027 DURING THE SEPTEMBER 2015 TESTING
RS
(V)
D
VCC
(V)
K1
K2
VCM
(V)
Cold Spare -20VCM
0
0V to 5.5V 50kHz
0
CL
CL
-20
Cold Spare +20VCM
0
0V to 5.5V 50kHz
0
CL
CL
+20
Slow Op -20VCM
OP
0V to 5.5V 50kHz
5.5
CL
CL
-20
Slow Op +20VCM
OP
0V to 5.5V 50kHz
5.5
CL
CL
+20
September 2015 Addendum
Subsequent to the previous report, further testing for damaging
SEE (referred to as SEB but to include SEL and SEGR) was done
on the ISL72027SEH parts on September 26th of 2015. Two
major changes were introduced into the testing. First the testing
was done at +25ºC ambient rather than +125ºC case
temperature. Second, the voltages used for testing were
increased to ±20V for the common-mode voltage to the bus pins
and +5.5V on the supply pin VCC when powered.
The ion species used was again Praseodymium (Pr) with the
in-air path lengthened to yield a surface LET of 60MeV•cm2/mg
at a 0º angle of incidence. Each irradiation was taken to a
fluence of 1x107ion/cm2. Four tests were run on each of four
units as described in Table 10.
As done previously, the supply current (ICC) and the bus
common- mode current (ICM) were monitored before and after
each irradiation and are reported in Table 11. The deltas for ICC
and ICM are presented in Table 12. The changes in ICC and ICM
do not provide any indication of damage due to the irradiations.
Before and after each grouping of the four tests indicated in
Table 10, the monitor parameters as described in Table 1 on
page 4 were measured. The raw data for these measurements is
provided in Table 13. The data reduced to deltas in the
parameters across the grouping of four irradiaitons is presented
in Table 14. Again the data gives no indication of any damage
due to the irradiations.
TABLE 11. SUPPLY AND COMMON MODE CURRENT MONITOR VALUES FOR SEB IRRADIATIONS AT VCC = 5.5V AND VCM = ±20V
DUT1
IRRADIATION
CONDITION
VCC = 0
VCM = -20V
VCC = 0
VCM = +20V
VCC = 5.5V
VCM = -20V
Slow 50kHz
VCC = 5.5V
VCM = +20V
Slow 50kHz
ICC
(mA)
DUT2
ICM
(mA)
ICC
(mA)
DUT3
ICM
(mA)
ICC
(mA)
DUT4
ICM
(mA)
ICC
(mA)
ICM
(mA)
Pre
0.0087
0.0087
0.0087
0.0086
Post
0.0087
0.0087
0.0086
0.0086
Pre
0.0085
0.0085
0.0085
0.0085
Post
0.0085
0.0085
0.0085
0.0085
Pre
7.356
67.062
6.846
66.671
6.966
66.610
7.365
67.150
Post
7.075
66.497
6.633
66.260
6.863
66.340
7.222
66.879
Pre
92.701
87.912
92.730
88.115
91.950
87.360
92.781
88.070
Post
94.350
89.120
93.872
88.952
92.620
87.823
93.370
88.493
September 2015 Addendum Conclusions
From this additional testing it is concluded that the
ISL72027SEH did not suffer any damage when operated with
VCC = 5.5V and VCM = ±20V and irradiated with ions having LET
of 60MeV•cm2/mg. The irradiations were carried out with the
part at ambient of approximately +25ºC and each irradiation was
taken to 1x107ion/cm2.
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Test Report 018
TABLE 12. SUPPLY AND COMMON MODE CURRENT DELTAS FOR SEB IRRADIATIONS AT VCC = 5.5V AND VCM = ±20V
DUT1
IRRADIATION
CONDITION
VCC = 5.5V
ICC DELTA
(%)
DUT2
ICM DELTA
(%)
ICC DELTA
(%)
DUT3
ICM DELTA
(%)
ICC DELTA
(%)
DUT4
ICM DELTA
(%)
ICC DELTA
(%)
ICM DELTA
(%)
VCC = 0
VCM = -20V
0.0
0.0
-1.1
0.0
VCC = 0
VCM = +20V
0.0
0.0
0.0
0.0
VCC = 5.5V
VCM = -20V
Slow 50kHz
-3.8
-0.8
-3.1
-0.6
-1.5
-0.4
-1.9
-0.4
VCC = 5.5V
VCM = +20V
Slow 50kHz
1.8
1.4
1.2
0.9
0.7
0.5
0.6
0.5
TABLE 13. PARAMETRIC MONITORS FOR EACH SET OF IRRADIATIONS
DUT1
DUT2
DUT3
DUT4
ICM (µA) AT
VCM = -7V
ICM (µA) AT
VCM = +12V
VREF AT VCM
(V)
ICC (mA)
UNLOADED FAST
ICC (mA)
LOADED SLOW
Pre
682
736
1.775
4.315
23.820
Post
675
731
1.774
4.293
23.793
Pre
683
735
1.775
4.292
22.870
Post
677
729
1.773
4.276
22.734
Pre
683
736
1.775
4.314
23.400
Post
671
726
1.773
4.297
23.398
Pre
684
737
1.775
4.332
23.535
Post
674
728
1.774
4.312
23.521
NOTE: Refer to Table 10 on page 16. Irradiation was with Pr at 0° incidence for effective LET of 60MeV•cm2/mg and each SET of irradiations having a
total of 4x107ion/cm2.
TABLE 14. DELTAS OF PARAMETRIC MONITORS FOR EACH SET OF IRRADIATIONS
ICM (µA) AT
VCM = -7V
(%)
ICM (µA) AT
VCM = +12V
(%)
VREF AT VCM
(V)
(%)
ICC (mA)
UNLOADED FAST
(%)
ICC (mA)
Loaded Slow
(%)
DUT1
-1
-1
0
-1
0
DUT2
-1
-1
0
0
-1
DUT3
-2
-1
0
0
0
DUT4
-1
-1
0
0
0
NOTE: Refer to Table 10 on page 16. irradiation was with Pr at 0°incidence for effective LET of 60MeV•cm2/mg and each SET of irradiations having
4x107ion/cm2.
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the document is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
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