74AVCH1T45-Q100 Dual-supply voltage level translator/transceiver; 3-state Rev. 3 — 6 January 2016 Product data sheet 1. General description The 74AVCH1T45-Q100 is a single bit, dual supply transceiver that enables bidirectional level translation. It features two 1-bit input-output ports (A and B), a direction control input (DIR) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied with any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins A and DIR are referenced to VCC(A) and pin B is referenced to VCC(B). A HIGH on DIR allows transmission from A to B and a LOW on DIR allows transmission from B to A. The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both A and B are in the high-impedance OFF-state. The 74AVCH1T45-Q100 has active bus hold circuitry which is provided to hold unused or floating data inputs at a valid logic level. This feature eliminates the need for external pull-up or pull-down resistors. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2. Features and benefits Automotive product qualification in accordance with AEC-Q100 (Grade 1) Specified from 40 C to +85 C and from 40 C to +125 C Wide supply voltage range: VCC(A): 0.8 V to 3.6 V VCC(B): 0.8 V to 3.6 V High noise immunity Complies with JEDEC standards: JESD8-12 (0.8 V to 1.3 V) JESD8-11 (0.9 V to 1.65 V) JESD8-7 (1.2 V to 1.95 V) JESD8-5 (1.8 V to 2.7 V) JESD8-B (2.7 V to 3.6 V) ESD protection: MIL-STD-883, method 3015 Class 3B exceeds 8000 V HBM JESD22-A114E Class 3B exceeds 8000 V MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 ) 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state Maximum data rates: 500 Mbit/s (1.8 V to 3.3 V translation) 320 Mbit/s (< 1.8 V to 3.3 V translation) 320 Mbit/s (translate to 2.5 V or 1.8 V) 280 Mbit/s (translate to 1.5 V) 240 Mbit/s (translate to 1.2 V) Suspend mode Bus hold on data inputs Latch-up performance exceeds 100 mA per JESD 78 Class II Inputs accept voltages up to 3.6 V Low noise overshoot and undershoot < 10 % of VCC IOFF circuitry provides partial Power-down mode operation 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name 74AVCH1T45GW-Q100 40 C to +125 C SC-88 Description Version plastic surface-mounted package; 6 leads SOT363 4. Marking Table 2. Marking Type number Marking code[1] 74AVCH1T45GW-Q100 K5 [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram ',5 ',5 $ $ 9&&$ % % 9&&% 9&&$ DDJ Fig 1. Logic symbol 74AVCH1T45_Q100 Product data sheet 9&&% DDJ Fig 2. Logic diagram All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 2 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 6. Pinning information 6.1 Pinning $9&+74 9&&$ 9&&% *1' ',5 $ % DDD Fig 3. Pin configuration SOT363 6.2 Pin description Table 3. Pin description Symbol Pin Description VCC(A) 1 supply voltage port A and DIR GND 2 ground (0 V) A 3 data input or output B 4 data input or output DIR 5 direction control VCC(B) 6 supply voltage port B 7. Functional description Table 4. Function table[1] Supply voltage Input Input/output[2] VCC(A), VCC(B) DIR[3] A B 0.8 V to 3.6 V L A=B input 0.8 V to 3.6 V H input B=A GND[4] X Z Z [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. [2] The input circuit of the data I/O is always active. [3] The DIR input circuit is referenced to VCC(A). [4] If at least one of VCC(A) or VCC(B) is at GND level, the device goes into Suspend mode. 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 3 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC(A) VCC(B) IIK input clamping current Conditions Min Max Unit supply voltage A 0.5 +4.6 V supply voltage B 0.5 +4.6 V 50 - [1] 0.5 +4.6 [1][2][3] 0.5 [1] 0.5 +4.6 V - 50 mA VI < 0 V VI input voltage IOK output clamping current VO < 0 V VO output voltage Active mode 50 Suspend or 3-state mode IO output current VO = 0 V to VCCO ICC supply current ICC(A) or ICC(B) IGND ground current Tstg storage temperature total power dissipation Ptot Tamb = 40 C to +125 C [4] - mA V mA VCCO + 0.5 V - 100 mA 100 - mA 65 +150 C - 250 mW [1] The minimum input voltage ratings and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] VCCO is the supply voltage associated with the output port. [3] VCCO + 0.5 V should not exceed 4.6 V. [4] For SC-88 packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 4 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC(A) Conditions Min Max Unit supply voltage A 0.8 3.6 V VCC(B) supply voltage B 0.8 3.6 V VI input voltage 0 3.6 V VO output voltage 0 VCCO V 0 3.6 V 40 +125 C - 5 Active mode [1] Suspend or 3-state mode Tamb ambient temperature t/V input transition rise and fall rate VCCI = 0.8 V to 3.6 V [1] VCCO is the supply voltage associated with the output port. [2] VCCI is the supply voltage associated with the input port. [2] ns/V 10. Static characteristics Table 7. Typical static characteristics at Tamb = 25 C[1][2] At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter VOH HIGH-level output voltage Conditions Min Typ Max Unit - 0.69 - V 0.07 - V VI = VIH or VIL IO = 1.5 mA; VCC(A) = VCC(B) = 0.8 V VOL LOW-level output voltage VI = VIH or VIL II input leakage current DIR input; VI = 0 V or 3.6 V; VCC(A) = VCC(B) = 0.8 V to 3.6 V IBHL bus hold LOW current VI = 0.42 V; VCC(A) = VCC(B) = 1.2 V [3] - 26 IO = 1.5 mA; VCC(A) = VCC(B) = 0.8 V - 0.025 0.25 A - A IBHH bus hold HIGH current VI = 0.78 V; VCC(A) = VCC(B) = 1.2 V [4] - 24 - A IBHLO bus hold LOW overdrive current VI = GND to VCCI; VCC(A) = VCC(B) = 1.2 V [5] - 28 - A IBHHO bus hold HIGH overdrive current VI = GND to VCCI; VCC(A) = VCC(B) = 1.2 V [6] - 26 - A IOZ OFF-state output current A or B port; VO = 0 V or VCCO; VCC(A) = VCC(B) = 0.8 V to 3.6 V [7] - 0.5 2.5 A IOFF power-off leakage current A port; VI or VO = 0 V to 3.6 V; VCC(A) = 0 V; VCC(B) = 0.8 V to 3.6 V - 0.1 1 A B port; VI or VO = 0 V to 3.6 V; VCC(B) = 0 V; VCC(A) = 0.8 V to 3.6 V - 0.1 1 A DIR input; VI = 0 V or 3.3 V; VCC(A) = VCC(B) = 3.3 V - 1.0 - pF CI input capacitance 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 5 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state Table 7. Typical static characteristics at Tamb = 25 C[1][2] …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions CI/O A and B port; Suspend mode; VO = VCCO or GND; VCC(A) = VCC(B) = 3.3 V input/output capacitance Min Typ Max - 4.0 - Unit pF [1] VCCO is the supply voltage associated with the output port. [2] VCCI is the supply voltage associated with the data input port. [3] The bus hold circuit can sink at least the minimum low sustaining current at VIL max. Measure IBHL after lowering VI to GND and then raising it to VIL max. [4] The bus hold circuit can source at least the minimum high sustaining current at VIH min. Measure IBHH after raising VI to VCC and then lowering it to VIH min. [5] An external driver must source at least IBHLO to switch this node from LOW to HIGH. [6] An external driver must sink at least IBHHO to switch this node from HIGH to LOW. [7] For I/O ports, the parameter IOZ includes the input leakage current. Table 8. Static characteristics [1][2] At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter VIH HIGH-level input voltage 40 C to +85 C Conditions 40 C to +125 C Min Max Min Max Unit data input VCCI = 0.8 V 0.70VCCI - 0.70VCCI - V VCCI = 1.1 V to 1.95 V 0.65VCCI - 0.65VCCI - V VCCI = 2.3 V to 2.7 V 1.6 - 1.6 - V VCCI = 3.0 V to 3.6 V 2 - 2 - V VCC(A) = 0.8 V 0.70VCC(A) - 0.70VCC(A) - V VCC(A) = 1.1 V to 1.95 V 0.65VCC(A) - 0.65VCC(A) - V VCC(A) = 2.3 V to 2.7 V 1.6 - 1.6 - V VCC(A) = 3.0 V to 3.6 V 2 - 2 - V VCCI = 0.8 V - 0.30VCCI - 0.30VCCI V VCCI = 1.1 V to 1.95 V - 0.35VCCI - 0.35VCCI V VCCI = 2.3 V to 2.7 V - 0.7 - 0.7 V VCCI = 3.0 V to 3.6 V - 0.9 - 0.9 V VCC(A) = 0.8 V - 0.30VCC(A) - 0.30VCC(A) V VCC(A) = 1.1 V to 1.95 V - 0.35VCC(A) - 0.35VCC(A) V VCC(A) = 2.3 V to 2.7 V - 0.7 - 0.7 V VCC(A) = 3.0 V to 3.6 V - 0.9 - 0.9 V DIR input VIL LOW-level input voltage data input DIR input 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 6 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state Table 8. Static characteristics …continued[1][2] At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter VOH VOL 40 C to +85 C Conditions Max Min Max VCCO 0.1 - VCCO 0.1 - V IO = 3 mA; VCC(A) = VCC(B) = 1.1 V 0.85 - 0.85 - V IO = 6 mA; VCC(A) = VCC(B) = 1.4 V 1.05 - 1.05 - V IO = 8 mA; VCC(A) = VCC(B) = 1.65 V 1.2 - 1.2 - V IO = 9 mA; VCC(A) = VCC(B) = 2.3 V 1.75 - 1.75 - V IO = 12 mA; VCC(A) = VCC(B) = 3.0 V 2.3 - 2.3 - V - 0.1 - 0.1 V IO = 3 mA; VCC(A) = VCC(B) = 1.1 V - 0.25 - 0.25 V IO = 6 mA; VCC(A) = VCC(B) = 1.4 V - 0.35 - 0.35 V IO = 8 mA; VCC(A) = VCC(B) = 1.65 V - 0.45 - 0.45 V IO = 9 mA; VCC(A) = VCC(B) = 2.3 V - 0.55 - 0.55 V IO = 12 mA; VCC(A) = VCC(B) = 3.0 V - 0.7 - 0.7 V - 1 - 1.5 A 15 - 15 - A VI = 0.58 V; VCC(A) = VCC(B) = 1.65 V 25 - 25 - A VI = 0.70 V; VCC(A) = VCC(B) = 2.3 V 45 - 45 - A VI = 0.80 V; VCC(A) = VCC(B) = 3.0 V 100 - 90 - A 15 - 15 - A VI = 1.07 V; VCC(A) = VCC(B) = 1.65 V 25 - 25 - A VI = 1.60 V; VCC(A) = VCC(B) = 2.3 V 45 - 45 - A VI = 2.00 V; VCC(A) = VCC(B) = 3.0 V 100 - 100 - A HIGH-level VI = VIH or VIL output voltage IO = 100 A; VCC(A) = VCC(B) = 0.8 V to 3.6 V LOW-level VI = VIH or VIL output voltage IO = 100 A; VCC(A) = VCC(B) = 0.8 V to 3.6 V input leakage current IBHL bus hold LOW A or B port current VI = 0.49 V; VCC(A) = VCC(B) = 1.4 V DIR input; VI = 0 V or 3.6 V; VCC(A) = VCC(B) = 0.8 V to 3.6 V bus hold HIGH A or B port current VI = 0.91 V; VCC(A) = VCC(B) = 1.4 V 74AVCH1T45_Q100 Product data sheet Unit Min II IBHH 40 C to +125 C [3] [4] All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 7 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state Table 8. Static characteristics …continued[1][2] At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter IBHLO 40 C to +85 C Conditions Unit Min Max Min Max 125 - 125 - A 200 - 200 - A 300 - 300 - A 500 - 500 - A 125 - 125 - A 200 - 200 - A VCC(A) = VCC(B) = 2.7 V 300 - 300 - A VCC(A) = VCC(B) = 3.6 V 500 - 500 - A - 5 - 7.5 A bus hold LOW A or B port overdrive VCC(A) = VCC(B) = 1.6 V current VCC(A) = VCC(B) = 1.95 V [5] VCC(A) = VCC(B) = 2.7 V VCC(A) = VCC(B) = 3.6 V IBHHO 40 C to +125 C bus hold HIGH A or B port overdrive VCC(A) = VCC(B) = 1.6 V current VCC(A) = VCC(B) = 1.95 V [6] [7] IOZ OFF-state output current A or B port; VO = 0 V or VCCO; VCC(A) = VCC(B) = 0.8 V to 3.6 V IOFF power-off leakage current A port; VI or VO = 0 V to 3.6 V; VCC(A) = 0 V; VCC(B) = 0.8 V to 3.6 V - 5 - 35 A B port; VI or VO = 0 V to 3.6 V; VCC(B) = 0 V; VCC(A) = 0.8 V to 3.6 V - 5 - 35 A VCC(A) = 0.8 V to 3.6 V; VCC(B) = 0.8 V to 3.6 V - 8 - 12 A VCC(A) = 3.6 V; VCC(B) = 0 V - 8 - 12 A VCC(A) = 0 V; VCC(B) = 3.6 V 2 - 8 - A - 8 - 12 A ICC supply current A port; VI = 0 V or VCCI; IO = 0 A B port; VI = 0 V or VCCI; IO = 0 A VCC(A) = 0.8 V to 3.6 V; VCC(B) = 0.8 V to 3.6 V VCC(A) = 3.6 V; VCC(B) = 0 V 2 - 8 - A VCC(A) = 0 V; VCC(B) = 3.6 V - 8 - 12 A - 16 - 24 A A plus B port (ICC(A) + ICC(B)); IO = 0 A; VI = 0 V or VCCI; VCC(A) = 0.8 V to 3.6 V; VCC(B) = 0.8 V to 3.6 V [1] VCCO is the supply voltage associated with the output port. [2] VCCI is the supply voltage associated with the data input port. [3] The bus hold circuit can sink at least the minimum low sustaining current at VIL max. Measure IBHL after lowering VI to GND and then raising it to VIL max. [4] The bus hold circuit can source at least the minimum high sustaining current at VIH min. Measure IBHH after raising VI to VCC and then lowering it to VIH min. [5] An external driver must source at least IBHLO to switch this node from LOW to HIGH. [6] An external driver must sink at least IBHHO to switch this node from HIGH to LOW. [7] For I/O ports, the parameter IOZ includes the input leakage current. 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 8 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 11. Dynamic characteristics Table 9. Typical dynamic characteristics at VCC(A) = 0.8 V and Tamb = 25 C [1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5 Symbol Parameter tpd VCC(B) Unit 0.8 V 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V propagation delay A to B 15.8 8.4 8.0 8.0 8.7 9.5 ns B to A 15.8 12.7 12.4 12.2 12.0 11.8 ns DIR to A 12.2 12.2 12.2 12.2 12.2 12.2 ns tdis disable time ten enable time [1] Conditions DIR to B 11.7 7.9 7.6 8.2 8.7 10.2 ns DIR to A 27.5 20.6 20.0 20.4 20.7 22.0 ns DIR to B 28.0 20.6 20.2 20.2 20.9 21.7 ns tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH. ten is a calculated value using the formula shown in Section 13.4 “Enable times” Table 10. Typical dynamic characteristics at VCC(B) = 0.8 V and Tamb = 25 C [1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5 Symbol Parameter Conditions tpd propagation delay A to B tdis disable time ten [1] enable time VCC(A) Unit 0.8 V 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V 15.8 12.7 12.4 12.2 12.0 11.8 ns B to A 15.8 8.4 8.0 8.0 8.7 9.5 ns DIR to A 12.2 4.9 3.8 3.7 2.8 3.4 ns DIR to B 11.7 9.2 9.0 8.8 8.7 8.6 ns DIR to A 27.5 17.6 17.0 16.8 17.4 18.1 ns DIR to B 28.0 17.6 16.2 15.9 14.8 15.2 ns tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH. ten is a calculated value using the formula shown in Section 13.4 “Enable times” Table 11. Typical power dissipation capacitance at VCC(A) = VCC(B) and Tamb = 25 C [1][2] Voltages are referenced to GND (ground = 0 V). Symbol Parameter CPD [1] power dissipation capacitance Conditions VCC(A) and VCC(B) Unit 0.8 V 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V A port: (direction A to B); B port: (direction B to A) 1 2 2 2 2 2 pF A port: (direction B to A); B port: (direction A to B) 9 11 11 12 14 17 pF CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD VCC2 fi N + (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL VCC2 fo) = sum of the outputs. [2] fi = 10 MHz; VI = GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL = . 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 9 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state Table 12. Dynamic characteristics for temperature range 40 C to +85 C [1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5. Symbol Parameter Conditions VCC(B) Unit 1.2 V 0.1 V 1.5 V 0.1 V 1.8 V 0.15 V 2.5 V 0.2 V 3.3 V 0.3 V Min Max Min Max Min Max Min Max Min Max VCC(A) = 1.1 V to 1.3 V tpd tdis ten propagation delay A to B 1.0 9.0 0.7 6.8 0.6 6.1 0.5 5.7 0.5 6.1 ns B to A 1.0 9.0 0.8 8.0 0.7 7.7 0.6 7.2 0.5 7.1 ns disable time DIR to A 2.2 8.8 2.2 8.8 2.2 8.8 2.2 8.8 2.2 8.8 ns DIR to B 2.2 8.4 1.8 6.7 2.0 6.9 1.7 6.2 2.4 7.2 ns enable time DIR to A - 17.4 - 14.7 - 14.6 - 13.4 - 14.3 ns DIR to B - 17.8 - 15.6 - 14.9 - 14.5 - 14.9 ns 4.6 0.5 3.7 0.5 3.5 ns VCC(A) = 1.4 V to 1.6 V tpd propagation delay A to B 1.0 8.0 0.7 5.4 0.6 B to A 1.0 6.8 0.8 5.4 0.7 5.1 0.6 4.7 0.5 4.5 ns tdis disable time DIR to A 1.6 6.3 1.6 6.3 1.6 6.3 1.6 6.3 1.6 6.3 ns DIR to B 2.0 7.6 1.8 5.9 1.6 6.0 1.2 4.8 1.7 5.5 ns DIR to A - 14.4 - 11.3 - 11.1 - 9.5 - 10.0 ns DIR to B - 14.3 - 11.7 - 10.9 - 10.0 - 9.8 ns A to B 1.0 7.7 0.6 5.1 0.5 4.3 0.5 3.4 0.5 3.1 ns B to A 1.0 6.1 0.7 4.6 0.5 4.4 0.5 3.9 0.5 3.7 ns ten enable time VCC(A) = 1.65 V to 1.95 V tpd tdis ten propagation delay disable time enable time DIR to A 1.6 5.5 1.6 5.5 1.6 5.5 1.6 5.5 1.6 5.5 ns DIR to B 1.8 7.8 1.8 5.7 1.4 5.8 1.0 4.5 1.5 5.2 ns DIR to A - 13.9 - 10.3 - 10.2 - 8.4 - 8.9 ns DIR to B - 13.2 - 10.6 - 9.8 - 8.9 - 8.6 ns VCC(A) = 2.3 V to 2.7 V propagation delay A to B 1.0 7.2 0.5 4.7 0.5 3.9 0.5 3.0 0.5 2.6 ns B to A 1.0 5.7 0.6 3.8 0.5 3.4 0.5 3.0 0.5 2.8 ns tdis disable time DIR to A 1.5 4.2 1.5 4.2 1.5 4.2 1.5 4.2 1.5 4.2 ns DIR to B 1.7 7.3 2.0 5.2 1.5 5.1 0.6 4.2 1.1 4.8 ns ten enable time DIR to A - 13.0 - 9.0 - 8.5 - 7.2 - 7.6 ns DIR to B - 11.4 - 8.9 - 8.1 - 7.2 - 6.8 ns tpd VCC(A) = 3.0 V to 3.6 V tpd tdis ten [1] propagation delay A to B 1.0 7.1 0.5 4.5 0.5 3.7 0.5 2.8 0.5 2.4 ns B to A 1.0 6.1 0.6 3.6 0.5 3.1 0.5 2.6 0.5 2.4 ns disable time DIR to A 1.5 4.7 1.5 4.7 1.5 4.7 1.5 4.7 1.5 4.7 ns DIR to B 1.7 7.2 0.7 5.5 0.6 5.5 0.7 4.1 1.7 4.7 ns DIR to A - 13.3 - 9.1 - 8.6 - 6.7 - 7.1 ns DIR to B - 11.8 - 9.2 - 8.4 - 7.5 - 7.1 ns enable time tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH. ten is a calculated value using the formula shown in Section 13.4 “Enable times” 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 10 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state Table 13. Dynamic characteristics for temperature range 40 C to +125 C [1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5 Symbol Parameter Conditions VCC(B) Unit 1.2 V 0.1 V 1.5 V 0.1 V 1.8 V 0.15 V 2.5 V 0.2 V 3.3 V 0.3 V Min Max Min Max Min Max Min Max Min Max VCC(A) = 1.1 V to 1.3 V tpd tdis ten propagation delay A to B 1.0 9.9 0.7 7.5 0.6 6.8 0.5 6.3 0.5 6.8 ns B to A 1.0 9.9 0.8 8.8 0.7 8.5 0.6 8.0 0.5 7.9 ns disable time DIR to A 2.2 9.7 2.2 9.7 2.2 9.7 2.2 9.7 2.2 9.7 ns DIR to B 2.2 9.2 1.8 7.4 2.0 7.6 1.7 6.9 2.4 8.0 ns enable time DIR to A - 19.1 - 16.2 - 16.1 - 14.9 - 15.9 ns DIR to B - 19.6 - 17.2 - 16.5 - 16.0 - 16.5 ns VCC(A) = 1.4 V to 1.6 V tpd propagation delay A to B 1.0 8.8 0.7 6.0 0.6 5.1 0.5 4.1 0.5 3.9 ns B to A 1.0 7.5 0.8 6.0 0.7 5.7 0.6 5.2 0.5 5.0 ns tdis disable time DIR to A 1.6 7.0 1.6 7.0 1.6 7.0 1.6 7.0 1.6 7.0 ns DIR to B 2.0 8.3 1.8 6.5 1.6 6.6 1.2 5.3 1.7 6.1 ns DIR to A - 15.8 - 12.5 - 12.3 - 10.5 - 11.1 ns DIR to B - 15.8 - 13.0 - 12.7 - 11.1 - 10.9 ns A to B 1.0 8.5 0.6 5.7 0.5 4.8 0.5 3.8 0.5 3.5 ns B to A 1.0 6.8 0.7 5.1 0.5 4.9 0.5 4.3 0.5 4.1 ns ten enable time VCC(A) = 1.65 V to 1.95 V tpd tdis ten propagation delay disable time enable time DIR to A 1.6 6.1 1.6 6.1 1.6 6.1 1.6 6.1 1.6 6.1 ns DIR to B 1.8 8.6 1.8 6.3 1.4 6.4 1.0 5.0 1.5 5.8 ns DIR to A - 15.4 - 11.4 - 11.3 - 9.3 - 9.9 ns DIR to B - 14.6 - 11.8 - 10.9 - 9.9 - 9.6 ns VCC(A) = 2.3 V to 2.7 V propagation delay A to B 1.0 8.0 0.5 5.2 0.5 4.3 0.5 3.3 0.5 2.9 ns B to A 1.0 6.3 0.6 4.2 0.5 3.8 0.5 3.3 0.5 3.1 ns tdis disable time DIR to A 1.5 4.7 1.5 4.7 1.5 4.7 1.5 4.7 1.5 4.7 ns DIR to B 1.7 8.0 2.0 5.8 1.5 5.7 0.6 4.7 1.1 5.3 ns ten enable time DIR to A - 14.3 - 10.0 - 9.5 - 8.0 - 8.4 ns DIR to B - 12.7 - 9.9 - 9.0 - 8.0 - 7.6 ns tpd VCC(A) = 3.0 V to 3.6 V tpd tdis ten [1] propagation delay A to B 1.0 7.9 0.5 5.0 0.5 4.1 0.5 3.1 0.5 2.7 ns B to A 1.0 6.8 0.6 4.0 0.5 3.5 0.5 2.9 0.5 2.7 ns disable time DIR to A 1.5 5.2 1.5 5.2 1.5 5.2 1.5 5.2 1.5 5.2 ns DIR to B 1.7 7.9 0.7 6.0 0.6 6.1 0.7 4.6 1.7 5.2 ns DIR to A - 14.7 - 10.1 - 9.6 - 7.5 - 7.9 ns DIR to B - 13.1 - 10.2 - 9.3 - 8.3 - 7.9 ns enable time tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH. ten is a calculated value using the formula shown in Section 13.4 “Enable times” 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 11 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 12. Waveforms 9, 90 $%LQSXW *1' W3+/ W3/+ 92+ %$RXWSXW 90 DDH 92/ Measurement points are given in Table 14. VOL and VOH are typical output voltage levels that occur with the output load. Fig 4. The data input (A, B) to output (B, A) propagation delay times 9, ',5LQSXW 90 *1' W 3/= RXWSXW /2:WR2)) 2))WR/2: W 3=/ 9&&2 90 9; 92/ W 3+= 92+ W 3=+ 9< RXWSXW +,*+WR2)) 2))WR+,*+ 90 *1' RXWSXWV HQDEOHG RXWSXWV GLVDEOHG RXWSXWV HQDEOHG DDH Measurement points are given in Table 14. VOL and VOH are typical output voltage levels that occur with the output load. Fig 5. Enable and disable times Table 14. Measurement points Supply voltage Input[1] Output[2] VCC(A), VCC(B) VM VM VX VY 1.1 V to 1.6 V 0.5VCCI 0.5VCCO VOL + 0.1 V VOH 0.1 V 1.65 V to 2.7 V 0.5VCCI 0.5VCCO VOL + 0.15 V VOH 0.15 V 3.0 V to 3.6 V 0.5VCCI 0.5VCCO VOL + 0.3 V VOH 0.3 V [1] VCCI is the supply voltage associated with the data input port. [2] VCCO is the supply voltage associated with the output port. 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 12 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state W: 9, QHJDWLYH SXOVH 90 90 9 WI WU WU WI 9, SRVLWLYH SXOVH 90 90 9 W: 9(;7 9&& 9, * 5/ 92 '87 57 5/ &/ DDH Test data is given in Table 15. RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance. VEXT = External voltage for measuring switching times. Fig 6. Test circuit for measuring switching times Table 15. Test data Supply voltage Input VCC(A), VCC(B) VI[1] Load t/V CL RL tPLH, tPHL tPZH, tPHZ tPZL, tPLZ[2] 1.1 V to 1.6 V VCCI 1.0 ns/V 15 pF 2 k open GND 2VCCO 1.65 V to 2.7 V VCCI 1.0 ns/V 15 pF 2 k open GND 2VCCO 3.0 V to 3.6 V VCCI 1.0 ns/V 15 pF 2 k open GND 2VCCO [1] VCCI is the supply voltage associated with the data input port. [2] VCCO is the supply voltage associated with the output port. 74AVCH1T45_Q100 Product data sheet VEXT All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 13 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 13. Application information 13.1 Unidirectional logic level-shifting application The circuit given in Figure 7 is an example of the 74AVCH1T45-Q100 being used in a unidirectional logic level-shifting application. $9&+74 9&& 9&& 9&&$ *1' $ V\VWHP 9&&% ',5 9&& 9&& % V\VWHP DDD Fig 7. Unidirectional logic level-shifting application Table 16. 74AVCH1T45_Q100 Product data sheet Description unidirectional logic level-shifting application Pin Name Function Description 1 VCC(A) VCC1 supply voltage of system-1 (0.8 V to 3.6 V) 2 GND GND device GND 3 A OUT output level depends on VCC1 voltage 4 B IN input threshold value depends on VCC2 voltage 5 DIR DIR the GND (LOW level) determines B port to A port direction 6 VCC(B) VCC2 supply voltage of system-2 (0.8 V to 3.6 V) All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 14 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 13.2 Bidirectional logic level-shifting application Figure 8 shows the 74AVCH1T45-Q100 being used in a bidirectional logic level-shifting application. Since the device does not have an output enable pin, the system designer should take precautions to avoid bus contention between system-1 and system-2 when changing directions. $9&+74 9&& 9&& 9&&$ *1' ,2 $ 9&&% 9&& ',5 9&& ,2 % ',5&75/ V\VWHP V\VWHP DDD Fig 8. Bidirectional logic level-shifting application Table 17 provides a sequence that illustrates data transmission from system-1 to system-2 and then from system-2 to system-1. Table 17. Description bidirectional logic level-shifting application[1] State DIR CTRL I/O-1 I/O-2 Description 1 H output input system-1 data to system-2 2 H Z Z system-2 is getting ready to send data to system-1. I/O-1 and I/O-2 are disabled. The bus-line state depends on bus hold. 3 L Z Z DIR bit is set LOW. I/O-1 and I/O-2 are still disabled. The bus-line state depends on bus hold. 4 L input output system-2 data to system-1 [1] H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state. 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 15 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 13.3 Power-up considerations The device is designed such that no special power-up sequence is required other than GND being applied first. Table 18. Typical total supply current (ICC(A) + ICC(B)) VCC(A) VCC(B) Unit 0V 0.8 V 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V 0V 0 0.1 0.1 0.1 0.1 0.1 0.1 A 0.8 V 0.1 0.1 0.1 0.1 0.1 0.7 2.3 A 1.2 V 0.1 0.1 0.1 0.1 0.1 0.3 1.4 A 1.5 V 0.1 0.1 0.1 0.1 0.1 0.1 0.9 A 1.8 V 0.1 0.1 0.1 0.1 0.1 0.1 0.5 A 2.5 V 0.1 0.7 0.3 0.1 0.1 0.1 0.1 A 3.3 V 0.1 2.3 1.4 0.9 0.5 0.1 0.1 A 13.4 Enable times The enable times for the 74AVCH1T45-Q100 are calculated from the following formulas: • ten (DIR to A) = tdis (DIR to B) + tpd (B to A) • ten (DIR to B) = tdis (DIR to A) + tpd (A to B) In a bidirectional application, these enable times provide the maximum delay from the time the DIR bit is switched until an output is expected. For example, if the 74AVCH1T45-Q100 is initially transmitting from A to B, then the DIR bit is switched, the B port of the device must be disabled before presenting it with an input. After the B port has been disabled, an input signal applied to it appears on the corresponding A port after the specified propagation delay. 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 16 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 14. Package outline 3ODVWLFVXUIDFHPRXQWHGSDFNDJHOHDGV 627 ' % $ ( \ ; +( Y 0 $ 4 SLQ LQGH[ $ $ H ES F /S Z 0 % H GHWDLO; PP VFDOH ',0(16,216PPDUHWKHRULJLQDOGLPHQVLRQV 81,7 $ $ PD[ ES F ' ( H H +( /S 4 Y Z \ PP 287/,1( 9(56,21 5()(5(1&(6 ,(& -('(& -(,7$ 6& 627 Fig 9. (8523($1 352-(&7,21 ,668('$7( Package outline SOT363 (SC-88) 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 17 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 15. Abbreviations Table 19. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model MIL Military 16. Revision history Table 20. Revision history Document ID Release date Data sheet status Change notice Supersedes 74AVCH1T45_Q100 v.3 20160106 Product data sheet - 74AVCH1T45_Q100 v.2 - 74AVCH1T45_Q100 v.1 Modifications: 74AVCH1T45_Q100 v.2 Modifications: 74AVCH1T45_Q100 v.1 74AVCH1T45_Q100 Product data sheet • Table 16: Labels for pins 4 and 5 corrected. 20130409 • Product data sheet Type number 74AVCH1T45GM-Q100 has been removed. 20120807 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 - © NXP Semiconductors N.V. 2016. All rights reserved. 18 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 17. Legal information 17.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 17.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 17.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 74AVCH1T45_Q100 Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 19 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 17.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 18. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 74AVCH1T45_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 20 of 21 74AVCH1T45-Q100 NXP Semiconductors Dual-supply voltage level translator/transceiver; 3-state 19. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 16 17 17.1 17.2 17.3 17.4 18 19 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 9 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Application information. . . . . . . . . . . . . . . . . . 14 Unidirectional logic level-shifting application . 14 Bidirectional logic level-shifting application. . . 15 Power-up considerations . . . . . . . . . . . . . . . . 16 Enable times . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Contact information. . . . . . . . . . . . . . . . . . . . . 20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2016. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 January 2016 Document identifier: 74AVCH1T45_Q100