Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 0.15 0.65 max. 14.5±0.5 ● Low noise voltage NV. High foward current transfer ratio hFE. Allowing supply with the radial taping. 1.0 ● 0.85 ● 0.8 ■ Features 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 3.5±0.1 6.9±0.1 0.7 +0.1 2.5±0.5 2.5±0.5 (Ta=25˚C) +0.1 ■ Absolute Maximum Ratings 0.45–0.05 0.45–0.05 Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 3 2.5±0.1 1 Parameter Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 100 nA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 55 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 55 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V * VCE = 10V, IC = 2mA Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz Noise voltage *h FE VCE = 10V, IC = 1mA, GV = 80dB NV Rg = 100kΩ, Function = FLAT 210 650 1.0 200 V MHz 150 mV Rank classification Rank R S T hFE 210 ~ 340 290 ~ 460 360 ~ 650 1 Transistor 2SD1993 PC — Ta IC — VCE 120 100 400 300 200 100 80 200µA 150µA 40 100µA 50µA 20 120 160 200 2 4 10 3 1 0.3 Ta=75˚C 25˚C –25˚C 0.01 0.1 0.3 1 3 6 8 10 40 12 0 0.4 0.8 10 30 400 600 Ta=75˚C 400 25˚C –25˚C 200 VCB=5V Ta=25˚C 350 300 250 200 150 100 50 0 0.1 0.3 1 3 10 30 0 –1 100 Collector current IC (mA) Cob — VCB 120 VCE=5V Rg=1kΩ Ta=25˚C 6 5 4 f=100Hz 3 –30 –100 2 1kHz 2 VCE=10V GV=80dB Function=FLAT 100 Noise voltage NV (mV) 7 8 Noise figure NF (dB) –10 NV — IC 8 IE=0 f=1MHz Ta=25˚C –3 Emitter current IE (mA) NF — IE 10 2.0 fT — I E 800 Collector current IC (mA) 4 1.6 VCE=5V 100 6 1.2 Base to emitter voltage VBE (V) 1000 Forward current transfer ratio hFE 30 0.03 60 hFE — IC IC/IB=10 0.1 80 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 –25˚C 0 0 Transition frequency fT (MHz) 80 Ta=75˚C 20 0 40 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 100 250µA 60 VCE=5V 25˚C 300µA Collector current IC (mA) 350µA 0 Collector output capacitance Cob (pF) Ta=25˚C IB=400µA Ta=25˚C 0 80 Rg=100kΩ 60 22kΩ 40 5kΩ 20 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 IC — VBE 120 Collector current IC (mA) Collector power dissipation PC (mW) 500 0 –10 10kHz –30 –100 –300 Emitter current IE (µA) –1000 0 0.01 0.03 0.1 0.3 Collector current IC (µA) 1