Transistors 2SD1992A Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 ■ Features 3.5±0.1 For general amplification Complementary to 2SB1321A 0.85 14.5±0.5 0.65 max. • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping +0.1 ■ Absolute Maximum Ratings Ta = 25°C 1 Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2 3 2.5±0.1 Parameter 2.5±0.5 +0.1 2.5±0.5 0.45−0.05 0.45−0.05 1: Emitter 2: Collector 3: Base MT1 Type Package Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = 20 V, IE = 0 0.1 µA ICEO VCE = 20 V, IB = 0 1 µA Collector to base voltage VCBO IC = 10 µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2 mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 7 Forward current transfer ratio hFE1 *2 VCE = 10 V, IC = 10 mA 85 VCE = 10 V, IC = 500 mA 40 Collector cutoff current hFE2 *1 Collector to emitter saturation voltage *1 Transition frequency VCE(sat) fT Collector output capacitance Cob V 340 90 IC = 300 mA, IB = 30 mA 0.35 VCB = 10 V, IE = −10 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz 6 0.6 V MHz 15 pF Note) *1: Pulse measurement *2: Rank classification Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SD1992A Transistors IC VCE 700 700 600 500 400 300 200 Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 600 500 4 mA 400 3 mA 300 2 mA 200 0 1 mA 40 60 80 100 120 140 160 0 2 4 IC / IB = 10 10 3 1 Ta = 75°C −25°C 0.1 0.03 0.01 0.01 0.03 0.1 1 0.3 3 3 25°C 1 Ta = 75°C −25°C 0.3 0.1 3 160 120 80 40 −20−30 −50 −100 Emitter current IE (mA) 5 6 7 8 9 10 250 Ta = 75°C 200 25°C −25°C 150 100 50 0.1 0.3 1 3 0 0.01 0.03 10 6 4 2 2 3 5 10 3 10 IC = 2 mA Ta = 25°C 100 80 60 40 20 0 1 1 VCER RBE 8 0 0.3 120 IE = 0 f = 1 MHz Ta = 25°C 10 0.1 Collector current IC (A) Cob VCB 200 4 VCE = 10 V Collector current IC (A) Collector output capacitance Cob (pF) Transition frequency fT (MHz) 2 0.03 12 VCB = 10 V Ta = 25°C 2 1 hFE IC 10 fT IE −10 0 300 IC / IB = 10 0.01 0.01 0.03 10 240 −2 −3 −5 200 Base current IB (mA) 30 Collector current IC (A) 0 −1 300 VBE(sat) IC 30 25°C 400 0 8 10 12 14 16 18 20 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) IC 0.3 500 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) 100 6 Forward current transfer ratio hFE 20 600 100 Collector to emitter voltage VCER (V) 0 VCE = 10 V Ta = 25°C 700 100 100 0 IC IB 800 Collector current IC (mA) 800 Collector current IC (mA) Collector power dissipation PC (mW) PC Ta 800 20 30 50 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (kΩ) Transistors 2SD1992A ICEO Ta 104 VCE = 10 V ICEO (Ta) ICEO (Ta = 25°C) 103 102 10 1 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (°C) 3