Transistor 2SB1036 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 3.0±0.2 4.0±0.2 ■ Features marking (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V Emitter to base voltage VEBO –5 V Peak collector current ICP –50 mA Collector current IC –20 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 3 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 ● Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 ■ Electrical Characteristics 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol ICBO Collector cutoff current 2.54±0.15 Conditions min typ VCB = –50V, IE = 0 max Unit –100 nA –1 µA ICEO VCE = –50V, IB = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –120 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –120 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V 180 Forward current transfer ratio hFE* VCE = –5V, IC = –2mA Collector to emitter saturation voltage VCE(sat) IC = –20mA, IB = –2mA Transition frequency fT VCB = –5V, IE = 2mA, f = 200MHz Noise voltage *h FE NV VCE = –40V, IC = –1mA, GV = 80dB, Rg = 100kΩ, Function = FLAT 520 – 0.6 200 V MHz 150 mV Rank classification Rank R S hFE 180 ~ 360 260 ~ 520 1 2SB1036 Transistor PC — Ta IC — VCE –60 350 300 250 200 150 100 IB=–50µA –45µA –40µA –16 –35µA –30µA –12 –25µA –20µA –8 –15µA –10µA –4 50 25˚C Ta=75˚C –40 –25˚C –30 –20 –10 –5µA 0 40 60 80 100 120 140 160 0 0 –2 –10 –3 –1 Ta=75˚C –25˚C – 0.03 –1 –3 –10 –30 700 600 500 Ta=75˚C 25˚C 400 –25˚C 300 200 –1 –3 –10 –30 –100 5 4 3 2 VCE=–10V GV=80dB Function=FLAT 100 Noise voltage NV (mV) 6 Rg=100kΩ 80 60 22kΩ 40 4.7kΩ 20 1 –10 –30 –100 Collector to base voltage VCB (V) 0 – 0.01 –2.0 140 120 100 80 60 40 – 0.03 – 0.1 – 0.3 Collector current IC (mA) 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) NV — IC IE=0 f=1MHz Ta=25˚C –1.6 20 100 120 7 –1.2 VCB=–5V Ta=25˚C Collector current IC (mA) 8 – 0.8 fT — I E 800 Cob — VCB –3 – 0.4 Base to emitter voltage VBE (V) 160 0 – 0.1 – 0.3 –100 10 0 –1 0 900 Collector current IC (mA) 9 –12 VCE=–5V Forward current transfer ratio hFE –30 – 0.01 – 0.1 – 0.3 –10 1000 IC/IB=10 – 0.1 –8 hFE — IC –100 25˚C –6 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –4 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –50 Collector current IC (mA) –20 400 0 Collector output capacitance Cob (pF) VCE=–5V Ta=25˚C 450 0 2 IC — VBE –24 Collector current IC (A) Collector power dissipation PC (mW) 500 –1 100