SO D1 23W PTVSxS1UTR series High-temperature 400 W Transient Voltage Suppressor Rev. 1 — 11 October 2011 Product data sheet 1. Product profile 1.1 General description 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection in high-temperature applications. 1.2 Features and benefits Rated peak pulse power: PPPM = 400 W (350 W for 3V3) Reverse standoff voltage range: VRWM = 3.3 V to 64 V Reverse current: IRM = 0.001 A Very low package height: 1 mm High temperature stability Tj 185 C Small plastic package suitable for surface-mounted design AEC-Q101 qualified 1.3 Applications Power supply protection Automotive application Industrial application Power management High-temperature applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter PPPM rated peak pulse power VRWM reverse standoff voltage Conditions [1][2] [1] In accordance with IEC 61643-321 (10/1000 s current waveform). [2] For PTVS3V3S1UTR: PPPM = 350 W Min Typ Max Unit - - 400 W 3.3 - 64 V PTVSxS1UTR series NXP Semiconductors High-temperature 400 W Transient Voltage Suppressor 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 2 2 1 006aaa152 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number[1] Package PTVSxS1UTR series [1] Name Description Version - plastic surface-mounted package; 2 leads SOD123W The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V. 4. Marking Table 4. PTVSXS1UTR_SER Product data sheet Marking codes Type number Marking code Type number Marking code PTVS3V3S1UTR C2 PTVS20VS1UTR CL PTVS5V0S1UTR C3 PTVS22VS1UTR CM PTVS6V0S1UTR C4 PTVS24VS1UTR CN PTVS6V5S1UTR C5 PTVS26VS1UTR CP PTVS7V0S1UTR C6 PTVS28VS1UTR CR PTVS7V5S1UTR C7 PTVS30VS1UTR CS PTVS8V0S1UTR C8 PTVS33VS1UTR CT PTVS8V5S1UTR C9 PTVS36VS1UTR CU PTVS9V0S1UTR CA PTVS40VS1UTR CV PTVS10VS1UTR CB PTVS43VS1UTR CW PTVS11VS1UTR CC PTVS45VS1UTR CX PTVS12VS1UTR CD PTVS48VS1UTR CY PTVS13VS1UTR CE PTVS51VS1UTR CZ PTVS14VS1UTR CF PTVS54VS1UTR D1 PTVS15VS1UTR CG PTVS58VS1UTR D2 PTVS16VS1UTR CH PTVS60VS1UTR D3 PTVS17VS1UTR CJ PTVS64VS1UTR D4 PTVS18VS1UTR CK - - All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 October 2011 © NXP B.V. 2011. All rights reserved. 2 of 12 PTVSxS1UTR series NXP Semiconductors High-temperature 400 W Transient Voltage Suppressor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPPM Parameter Conditions rated peak pulse power Min Max Unit [1][2] - 400 W [1] - see Table 9 and 10 IPPM rated peak pulse current IFSM non-repetitive peak forward single half-sine current wave; tp = 8.3 ms - 50 A Tj junction temperature - 185 C Tamb ambient temperature 55 +185 C Tstg storage temperature 65 +185 C [1] In accordance with IEC 61643-321 (10/1000 s current waveform). [2] For PTVS3V3S1UTR: PPPM = 350 W Table 6. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions electrostatic discharge voltage IEC 61000-4-2; level 4 (contact discharge) Min Max Unit - 30 kV Per diode VESD [1] [1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses. Table 7. ESD standards compliance Standard Conditions Per diode PTVSXS1UTR_SER Product data sheet IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3B (human body model) > 8 kV All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 October 2011 © NXP B.V. 2011. All rights reserved. 3 of 12 PTVSxS1UTR series NXP Semiconductors High-temperature 400 W Transient Voltage Suppressor 6. Thermal characteristics Table 8. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Min Typ Max Unit [1] - - 220 K/W [2] - - 130 K/W [3] - - 70 K/W [4] - - 18 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. [4] Soldering point of cathode tab. 7. Characteristics Table 9. Characteristics per type; PTVS3V3S1UTR to PTVS7V0S1UTR Tj = 25 C unless otherwise specified. Type number PTVSxxx S1UTR Reverse standoff voltage Breakdown voltage VBR (V) Reverse leakage current VRWM (V) IR = 10 mA at VRWM Max Min Typ Max Typ Max Typ Max IPPM (A) Typ 3V3 3.3 5.20 5.60 6.00 5 600 17 8.0 43.8 1.0 5V0 5.0 6.40 6.70 7.00 5 400 17 9.2 43.5 2.5 6V0 6.0 6.67 7.02 7.37 5 400 17 10.3 38.8 3.2 6V5 6.5 7.22 7.60 7.98 5 250 17 11.2 35.7 3.6 7V0 7.0 7.78 8.20 8.60 3 100 9 12.0 33.3 4.3 PTVSXS1UTR_SER Product data sheet IRM (A) Clamping voltage VCL (V) at VRWM Tj = 150 C All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 October 2011 Temperature coefficient SZ (mV/K) IZ = 5 mA © NXP B.V. 2011. All rights reserved. 4 of 12 PTVSxS1UTR series NXP Semiconductors High-temperature 400 W Transient Voltage Suppressor Table 10. Characteristics per type; PTVS7V5S1UTR to PTVS64VS1UTR Tj = 25 C unless otherwise specified. Type number PTVSxxx S1UTR Reverse standoff voltage Breakdown voltage VBR (V) Reverse leakage current VRWM (V) IR = 1 mA at VRWM IRM (A) Clamping voltage VCL (V) at VRWM Tj = 150 C Temperature coefficient SZ (mV/K) IZ = 5 mA Max Min Typ Max Typ Max Typ Max IPPM (A) Typ 7V5 7.5 8.33 8.77 9.21 0.2 50 2 12.9 31.0 5.0 8V0 8.0 8.89 9.36 9.83 0.03 25 2 13.6 29.4 5.5 8V5 8.5 9.44 9.92 10.40 0.01 10 0.5 14.4 27.8 6.5 9V0 9.0 10.00 10.55 11.10 0.005 5 0.5 15.4 26.0 7.1 10V 10 11.10 11.70 12.30 0.005 2.5 0.5 17.0 23.5 8.1 11V 11 12.20 12.85 13.50 0.005 2.5 0.5 18.2 22.0 9.2 12V 12 13.30 14.00 14.70 0.005 2.5 0.5 19.9 20.1 10.3 13V 13 14.40 15.15 15.90 0.001 0.1 0.5 21.5 18.6 11.4 14V 14 15.60 16.40 17.20 0.001 0.1 0.5 23.2 17.2 13.2 15V 15 16.70 17.60 18.50 0.001 0.1 0.5 24.4 16.4 14.1 16V 16 17.80 18.75 19.70 0.001 0.1 0.5 26.0 15.4 15.9 17V 17 18.90 19.90 20.90 0.001 0.1 0.5 27.6 14.5 16.4 18V 18 20.00 21.00 22.10 0.001 0.1 0.5 29.2 13.7 18.5 20V 20 22.20 23.35 24.50 0.001 0.1 0.5 32.4 12.3 20.0 22V 22 24.40 25.60 26.90 0.001 0.1 0.5 35.5 11.3 23.8 24V 24 26.70 28.10 29.50 0.001 0.1 0.5 38.9 10.3 24.9 26V 26 28.90 30.40 31.90 0.001 0.1 0.5 42.1 9.5 29.1 28V 28 31.10 32.80 34.40 0.001 0.1 0.5 45.4 8.8 30.6 30V 30 33.30 35.10 36.80 0.001 0.1 0.5 48.4 8.3 34.4 33V 33 36.70 38.70 40.60 0.001 0.1 0.5 53.3 7.5 37.5 36V 36 40.00 42.10 44.20 0.001 0.1 0.5 58.1 6.9 42.3 40V 40 44.40 46.80 49.10 0.001 0.1 0.5 64.5 6.2 48.1 43V 43 47.80 50.30 52.80 0.001 0.1 0.5 69.4 5.8 51.6 45V 45 50.00 52.65 55.30 0.001 0.1 0.5 72.7 5.5 55.2 48V 48 53.30 56.10 58.90 0.001 0.1 0.5 77.4 5.2 58.2 51V 51 56.70 59.70 62.70 0.001 0.1 0.5 82.4 4.9 62.5 54V 54 60.00 63.15 66.30 0.001 0.1 0.5 87.1 4.6 66.1 58V 58 64.40 67.80 71.20 0.001 0.1 0.5 93.6 4.3 71.4 60V 60 66.70 70.20 73.70 0.001 0.1 0.5 96.8 4.1 74.1 64V 64 71.10 74.85 78.60 0.001 0.1 0.5 103.0 3.9 80.0 PTVSXS1UTR_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 October 2011 © NXP B.V. 2011. All rights reserved. 5 of 12 PTVSxS1UTR series NXP Semiconductors High-temperature 400 W Transient Voltage Suppressor 006aab319 150 006aac765 1.2 PPPM IPP (%) PPPM(25°C) 100 % IPP; 10 μs 100 0.8 50 % IPP; 1000 μs 50 0.4 0 0.0 0 1.0 2.0 3.0 4.0 0 50 100 150 tp (ms) Fig 1. 200 Tj (°C) 10/1000 s pulse waveform according to IEC 61643-321 Fig 2. Relative variation of rated peak pulse power as a function of junction temperature; typical values 006aab418 105 PPPM (W) 104 (1) (2) 103 102 10−1 1 10 102 103 104 tp (μs) Tamb = 25 C (1) PTVS5V0S1UTR to PTVS64VS1UTR (2) PTVS3V3S1UTR Fig 3. Rated peak pulse power as a function of pulse duration; typical values PTVSXS1UTR_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 October 2011 © NXP B.V. 2011. All rights reserved. 6 of 12 PTVSxS1UTR series NXP Semiconductors High-temperature 400 W Transient Voltage Suppressor I −VCL −VBR −VRWM V −IRM −IR − + P-N −IPP −IPPM Fig 4. 006aab324 V-I characteristics for a unidirectional TVS protection diode 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 1.9 1.5 1.1 0.9 1 0.6 0.3 3.7 3.3 2.8 2.4 2 1.05 0.75 Dimensions in mm Fig 5. PTVSXS1UTR_SER Product data sheet 0.22 0.10 08-11-06 Package outline SOD123W All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 October 2011 © NXP B.V. 2011. All rights reserved. 7 of 12 PTVSxS1UTR series NXP Semiconductors High-temperature 400 W Transient Voltage Suppressor 10. Packing information Table 11. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number[2] Package Description Packing quantity 3000 PTVSxS1UTR series SOD123W 4 mm pitch, 8 mm tape and reel [1] For further information and the availability of packing methods, see Section 14. [2] The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V. -115 11. Soldering 4.4 2.9 2.8 solder lands solder resist 1.1 1.2 (2×) (2×) 2.1 1.6 solder paste occupied area 1.1 (2×) 1.2 (2×) Dimensions in mm sod123w_fr Reflow soldering is the only recommended soldering method. Fig 6. PTVSXS1UTR_SER Product data sheet Reflow soldering footprint SOD123W All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 October 2011 © NXP B.V. 2011. All rights reserved. 8 of 12 PTVSxS1UTR series NXP Semiconductors High-temperature 400 W Transient Voltage Suppressor 12. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes PTVSXS1UTR_SER v.1 20111011 Product data sheet - - PTVSXS1UTR_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 October 2011 © NXP B.V. 2011. All rights reserved. 9 of 12 PTVSxS1UTR series NXP Semiconductors High-temperature 400 W Transient Voltage Suppressor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. PTVSXS1UTR_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 October 2011 © NXP B.V. 2011. All rights reserved. 10 of 12 PTVSxS1UTR series NXP Semiconductors High-temperature 400 W Transient Voltage Suppressor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PTVSXS1UTR_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 October 2011 © NXP B.V. 2011. All rights reserved. 11 of 12 PTVSxS1UTR series NXP Semiconductors High-temperature 400 W Transient Voltage Suppressor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 October 2011 Document identifier: PTVSXS1UTR_SER