TDF8599A I2C-bus controlled dual channel 135 W/4 , single channel 250 W/2 class-D power amplifier with load diagnostics Rev. 3 — 2 May 2013 Product data sheet 1. General description The TDF8599A is a dual Bridge-Tied Load (BTL) car audio amplifier comprising an NDMOST-NDMOST output stage based on SOI BCDMOS technology. Low power dissipation enables the TDF8599A high-efficiency, class-D amplifier to be used with a smaller heat sink than those normally used with standard class-AB amplifiers. The TDF8599A can operate in either non-I2C-bus mode or I2C-bus mode. When in I2C-bus mode, DC load detection results and fault conditions can be easily read back from the device. Up to 15 I2C-bus addresses can be selected depending on the value of the external resistor connected to pins ADS and MOD. When pin ADS is short circuited to ground, the TDF8599A operates in non-I2C-bus mode. Switching between Operating mode and Mute mode in non-I2C-bus mode is only possible using pins EN and SEL_MUTE. 2. Features and benefits High-efficiency Low quiescent current Operating voltage from 8 V to 35 V Two 4 /2 capable BTL channels or one 1 capable BTL channel Differential inputs I2C-bus mode with 15 I2C-bus addresses or non-I2C-bus mode operation Clip detect Independent short circuit protection for each channel Advanced short circuit protection for load, GND and supply Load dump protection Thermal foldback and thermal protection DC offset protection Selectable AD or BD modulation Parallel channel mode for high current drive capability Advanced clocking: Switchable oscillator clock source: internal for Master mode or external for Slave mode Spread spectrum mode Phase staggering Frequency hopping No ‘pop noise’ caused by DC output offset voltage TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier I2C-bus mode: DC load detection AC load detection Thermal pre-warning diagnostic level setting Identification of activated protections or warnings Selectable diagnostic information available using pins DIAG and CLIP Qualified in accordance with AEC-Q100 3. Applications Car audio 4. Quick reference data Table 1. Quick reference data VP = 14.4 V unless otherwise stated. Symbol Parameter Conditions Min [1] Typ Max Unit VP supply voltage 8 14.4 35 V IP supply current off state; Tj 85 C; VP = 14.4 V - 2 10 A Iq(tot) total quiescent current Operating mode; no load, snubbers and filter connected - 90 120 mA Po output power Stereo mode: VP = 14.4 V; THD = 1 %; RL = 4 18 20 - W VP = 14.4 V; THD = 10 %; RL = 4 23 25 - W square wave (EIAJ); RL = 4 - 40 - W [2] VP = 35 V; THD = 10 %; RL = 4 - 135 - W VP = 14.4 V; THD = 1 %; RL = 2 26 29 - W VP = 14.4 V; THD = 10 %; RL = 2 34 38 - W - 60 - W VP = 14.4 V; THD = 10 %; RL = 2 - 50 - W VP = 35 V; THD = 10 %; RL = 2 - 250 - W VP = 25 V; THD = 1 %; RL = 1 135 150 - W square wave (EIAJ); RL = 2 Parallel mode: [1] In this data sheet supply voltage VP describes VP1, VP2 and VPA. [2] Output power is measured indirectly based on RDSon measurement. [2] 5. Ordering information Table 2. Ordering information Type number TDF8599ATH TDF8599A Product data sheet Package Name Description Version HSOP36 plastic, heatsink small outline package; 36 leads; low stand-off height SOT851-2 All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 2 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 6. Block diagram VDDA 10 AGND SVRR VP1 VP2 31 24 34 STABI1 9 32 8 VP1 33 PWM CONTROL 1 OUT1N DRIVER LOW PGND1 29 VP1 IN1N BOOT1N DRIVER HIGH TDF8599A IN1P VSTAB1 2 BOOT1P DRIVER HIGH 28 PWM CONTROL OUT1P DRIVER LOW ACGND PGND1 5 + 23 VP2 BOOT2N DRIVER HIGH 22 PWM CONTROL IN2P 3 PGND2 26 VP2 IN2N OUT2N DRIVER LOW 4 BOOT2P DRIVER HIGH 27 PWM CONTROL OUT2P DRIVER LOW OSCSET OSCIO SSM MOD VDDD EN SEL_MUTE SCL SDA ADS 18 PGND2 19 17 OSCILLATOR 12 35 5 V STABI 16 15 MODE SELECT + I2C-BUS DIAGNOSTICS Product data sheet PROTECTION OVP, OCP, OTP UVP, TFP, WP, DCP 11 GNDD/HW TDF8599A VSTAB2 6 7 14 36 Fig 1. 21 STABI2 DIAG 13 20 CLIP DCP 30 25 PGND1 PGND2 001aak071 Block diagram All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 3 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 7. Pinning information 7.1 Pinning GNDD/HW 36 1 VDDD 35 2 IN1N VSTAB1 34 3 IN2P IN1P OUT1N 33 4 IN2N BOOT1N 32 5 ACGND VP1 31 6 EN PGND1 30 7 SEL_MUTE BOOT1P 29 8 SVRR OUT1P 28 9 AGND OUT2P 27 TDF8599ATH 10 VDDA BOOT2P 26 11 ADS PGND2 25 12 MOD VP2 24 13 CLIP BOOT2N 23 14 DIAG OUT2N 22 15 SDA VSTAB2 21 16 SCL DCP 20 17 SSM 18 OSCSET OSCIO 19 001aak072 Fig 2. Heatsink up (top view) pin configuration TDF8599ATH 7.2 Pin description Table 3. Pin description Symbol Pin Type[1] Description IN1P 1 I channel 1 positive audio input IN1N 2 I channel 1 negative audio input IN2P 3 I channel 2 positive audio input IN2N 4 I channel 2 negative audio input ACGND 5 I decoupling for input reference voltage EN 6 I enable input: non-I2C-bus mode: switch between off and Mute mode I2C-bus mode: off and Standby mode SEL_MUTE 7 I select mute or unmute SVRR 8 I decoupling for internal half supply reference voltage AGND 9 G analog supply ground VDDA 10 P analog supply voltage ADS 11 I non-I2C-bus mode: connected to ground I2C-bus mode: selection and address selection pin MOD TDF8599A Product data sheet 12 I modulation mode, phase shift and parallel mode select All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 4 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier Table 3. Pin description …continued Symbol Pin Type[1] Description CLIP 13 O clip output; open-drain DIAG 14 O diagnostic output; open-drain SDA 15 I/O I2C-bus data input and output SCL 16 I I2C-bus clock input SSM 17 master setting: Spread spectrum mode frequency slave setting: phase lock operation OSCSET 18 master/slave oscillator setting master only setting: set internal oscillator frequency OSCIO 19 I/O external oscillator slave setting: input internal oscillator master setting: output DCP 20 I DC protection input for the filtered output voltages VSTAB2 21 OUT2N 22 BOOT2N 23 VP2[2] 24 P channel 2 power supply voltage PGND2 25 G channel 2 power ground BOOT2P 26 OUT2P 27 O channel 2 positive PWM output OUT1P 28 O channel 1 positive PWM output BOOT1P 29 PGND1 30 G channel 1 power ground VP1[2] 31 P channel 1 power supply voltage BOOT1N 32 OUT1N 33 VSTAB1 34 decoupling internal stabilizer 1 for DMOST drivers VDDD 35 decoupling of the internal 5 V logic supply GNDD/HW 36 decoupling internal stabilizer 2 for DMOST drivers O channel 2 negative PWM output boot 2 negative bootstrap capacitor boot 2 positive bootstrap capacitor boot 1 positive bootstrap capacitor boot 1 negative bootstrap capacitor O G channel 1 negative PWM output ground digital supply voltage handle wafer connection [1] I = input, O = output, I/O = input/output, G = ground and P = power supply. [2] In this data sheet supply voltage VP describes VP1, VP2 and VPA. 8. Functional description 8.1 General The TDF8599A is a dual full bridge (BTL) audio power amplifier using class-D technology. The audio input signal is converted into a Pulse-Width Modulated (PWM) signal using the analog input and PWM control stages. A PWM signal is applied to driver circuits for both high-side and low-side enabling the DMOS power output transistors to be driven. An external 2nd order low-pass filter converts the PWM signal into an analog audio signal across the loudspeakers. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 5 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier The TDF8599A includes integrated common circuits for all channels such as the oscillator, all reference sources, mode functionality and a digital timing manager. In addition, the built-in protection includes thermal foldback, temperature, overcurrent and overvoltage (load dump). The TDF8599A operates in either I2C-bus mode or non-I2C-bus mode. In I2C-bus mode, DC load detection, frequency hopping and extended configuration functions are provided together with enhanced diagnostic information. 8.2 Mode selection The mode pins EN, ADS and SEL_MUTE enable mute state, I2C-bus mode and Operating mode switching. Pin SEL_MUTE is used to mute and unmute the device and must be connected to an external capacitor (CON). This capacitor generates a time constant which is used to ensure smooth fade-in and fade-out of the input signal. The TDF8599A is enabled when pin EN is HIGH. When pin EN is LOW, the TDF8599A is off and the supply current is at its lowest value (typically 2 A). When off, the TDF8599A is completely deactivated and will not react to I2C-bus commands. I2C-bus mode is selected by connecting a resistor between pins ADS and AGND. In I2C-bus mode with pin EN HIGH, the TDF8599A waits for further commands (see Table 4). I2C-bus mode is described in Section 9 on page 23. Non-I2C-bus mode is selected by connecting pin ADS to pin AGND. In non-I2C-bus mode, the default TDF8599A state is Mute mode. The amplifiers switch idle (50 % duty cycle) and the audio signal is suppressed at the output. In addition, the capacitor (CSVRR) is charged to half the supply voltage. To enter Operating mode, pin SEL_MUTE must be HGH with S1 open, enabling capacitor (CON) charged by an internal pull-up (see Figure 3). In addition, pin EN must be driven HIGH. S2 3.3 V S2 EN EN 3.3 V TDF8599A ADS TDF8599A SEL_MUTE ADS SEL_MUTE RADS AGND AGND CON CON S1 001aak073 a. Non-I2C-bus mode 001aak074 b. I2C-bus mode See Table 13 for detailed information on RADS. Fig 3. Mode selection I2C-bus mode and non-I2C-bus mode control are described in Table 4 on page 7 and Table 5 on page 7. Switches S1 and S2 are shown in Figure 3. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 6 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier Table 4. I2C-bus mode operation Pin EN Pin SEL_MUTE Bit IB1[D0] Bit IB2[D0] Mode HIGH (S2 closed) HIGH 1 0 Operating mode LOW (S2 open) [1] LOW 1 1 Mute mode LOW 0 X[1] Standby mode X[1] X[1] X[1] off (default) X = do not care. Table 5. Non-I2C-bus mode operation Pin EN Pin SEL_MUTE Mode HIGH (S2 closed) HIGH (S1 open) Operating mode LOW (S1 closed) Mute mode (default) X[1] off LOW (S2 open) [1] X = do not care. 8.3 Pulse-width modulation frequency The output signal from the amplifier is a PWM signal with a clock frequency of fosc. This frequency is set by connecting a resistor (Rosc) between pins OSCSET and AGND. The optimal clock frequency setting is between 300 kHz and 400 kHz. Connecting a resistor with a value of 39 k, for example, sets the clock frequency to 320 kHz (see Figure 5). The external capacitor (Cosc) has no influence on the oscillator frequency. It does however, reduce jitter and sensitivity to disturbance. Using a 2nd order LC demodulation filter in the application generates an analog audio signal across the loudspeaker. 8.3.1 Master and slave mode selection In a master and slave configuration, multiple TDF8599A devices are daisy-chained together in one audio application with a single device providing the clock frequency signal for all other devices. In this situation, it is recommended that the oscillators of all devices are synchronized for optimum EMI behavior as follows: All OSCIO pins are connected together and one TDF8599A in the application is configured as the clock-master. All other TDF8599A devices are configured as clock-slaves (see Figure 5). • The clock-master pin OSCIO is configured as the oscillator output. When a resistor (Rosc) is connected between pins OSCSET and AGND, the TDF8599A is in Master mode. • The clock-slave pins OSCIO are configured as the oscillator inputs. When pin OSCSET is directly connected to pin AGND (see Table 6), the TDF8599A is in Slave mode. Table 6. TDF8599A Product data sheet Mode setting pin OSCIO Mode Settings Pin OSCSET Pin OSCIO Master Rosc > 26 k output Slave Rosc = 0 ; shorted to pin AGND input All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 7 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier The value of the resistor Rosc sets the clock frequency based on Equation 1: 9 12.45 10 f osc = ---------------------------- Hz R osc (1) 001aai771 50 Rosc (kΩ) 40 30 20 10 0 300 Fig 4. 350 400 450 500 fosc (kHz) Clock frequency as a function of Rosc OSCSET TDF8599A Rosc Cosc OSCSET OSCSET TDF8599A TDF8599A OSCIO OSCIO OSCIO Master fosc R Slave 1 Slave 2 001aak075 Fig 5. Master and slave configuration In Master mode, Spread spectrum mode and frequency hopping can be enabled. In Slave mode, phase staggering and phase lock operation can be selected. An external clock can be used as the master-clock on pin OSCIO of the slave devices. When using an external clock, it must remain active during the shutdown sequence to ensure that all devices are switched off and able to enter the off state as described in Section 8.2 on page 6. In Slave mode, an internal watchdog timer on pin OSCIO is triggered when the TDF8599A is switched off by pulling down pin EN. If the external clock fails, the watchdog timer forces the TDF8599A to switch off. 8.3.2 Spread spectrum mode (Master mode) Spread spectrum mode is a technique of modulating the oscillator frequency with a slowly varying signal to broaden the switching spectrum, thereby reducing the spectral density of the EMI. Connecting a capacitor (CSSM) to pin SSM enables Spread spectrum mode (see Figure 6). When pin SSM is connected to pin AGND, Spread spectrum mode is disabled. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 8 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier The capacitor on pin SSM (CSSM) sets the spreading frequency when Spread spectrum mode is active. The current (ISSM) flowing in and out of pin SSM is typically 5 A. This gives a triangular voltage on pin SSM that sweeps around the voltage set by pin OSCSET 5 %. The voltage on pin SSM is used to modulate the oscillator frequency. The spread spectrum frequency (fSSM) can be calculated using Equation 2: I SSM f SSM = ----------------------------------------------------- Hz 2 C SSM V 1 10 % (2) where the voltage on pin OSCSET = V1 and is calculated as 100 A Rosc (V) with ISSM = 5 A. 100 μA 100 μA OSCSET Rosc OSCSET Cosc Cosc Rosc 5 μA ISSM SSM SSM CSSM 001aai773 001aai774 a. Off Fig 6. b. On Spread spectrum mode The frequency swings between 0.95 fosc and 1.05 fosc; see Figure 7. OSCIO max(V) min(V) t (ms) SSM 001aai775 Fig 7. Spread spectrum operation in Master mode 8.3.3 Frequency hopping (Master mode) Frequency hopping is a technique used to change the oscillator frequency for AM tuner compatibility. In Master mode, the resistor connected between pins OSCSET and AGND sets the oscillator frequency (fosc). In I2C-bus mode, this frequency can be varied by 10 %. Set bit IB1[D4] to logic 1 and bit IB1[D3] to either logic 0 (0.9 fosc) or logic 1 (1.1 fosc). TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 9 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 8.3.4 Phase lock operation (Slave mode) In Slave mode, Phase-Locked Loop (PLL) operation can be used to reduce the jitter effect of the external oscillator signal connected to pin OSCIO. Phase lock operation is also needed to enable phase staggering, see Section 8.4.2 on page 13. Phase lock operation is enabled when the oscillator is in Slave mode by connecting two capacitors (CPLL_s and CPLL_p) and a resistor (RPLL) between pin SSM and pin AGND (see Figure 8). Connecting pin SSM to pin AGND disables phase lock operation and causes the slave to directly use the external oscillator signal. Values for CPLL_s, CPLL_p and RPLL depend on the desired loop bandwidth (BPLL) of the PLL. RPLL is given by: RPLL = 8.4 BPLL . The corresponding values for CPLL_s and CPLL_p are given by Equation 3 and Equation 4: 0.032 C PLL_p = ------------------------------ F R PLL B PLL (3) Remark: CPLL_p is only needed when 1⁄4 phase shift is selected. See Section 8.4.2 for more detailed information. 0.8 C PLL_s = ------------------------------ F R PLL B PLL (4) When pin OSCIO is connected to a clock-master with Spread spectrum mode enabled, the PLL loop bandwidth BPLL should be 100 fSSM. 100 μA OSCSET 100 μA OSCSET PLL PLL SSM CPLL_s SSM RPLL 001aai776 CPLL_p(1) 001aai777 (1) Only needed when 1⁄4 phase shift is selected a. Off Fig 8. b. On Phase lock operation Table 7 lists all oscillator modes. Table 7. TDF8599A Product data sheet Oscillator modes OSCSET pin OSCIO pin SSM pin Oscillator modes Rosc > 26 k output CSSM to pin AGND master, spread spectrum Rosc > 26 k output shorted to pin AGND master, no spread spectrum Rosc = 0 input CPLL + RPLL to pin AGND slave, PLL enabled Rosc = 0 input shorted to pin AGND slave, PLL disabled All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 10 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 8.4 Operation mode selection Pin MOD is used to select specific operating modes. The resistor (RMOD) connected between pins MOD and AGND together with the non-I2C-bus/I2C-bus mode determine the operating mode (see Table 8). The mode of operation depends on whether non-I2C-bus mode or I2C-bus mode is active. This in turn is determined by the resistor value connected between pins ADS and AGND. In non-I2C-bus mode, pin MOD is used to select: • AD or BD modulation (see Section 8.4.1). • 1⁄2 phase shift when oscillator is used in Slave mode (see Section 8.4.2). • Parallel mode operation (see Section 8.4.3). In I2C-bus mode, pin MOD can only select Parallel mode. In addition, the modulation mode and phase shift are programmed using I2C-bus commands. Table 8. RMOD (k) Operation mode selection with the MOD pin I2C-bus mode[1] Non-I2C-bus mode[2] 0 (short to AGND) Stereo mode AD modulation: no phase shift in Slave mode 4.7 BD modulation: no phase shift in Slave mode 13 AD modulation: 1⁄2 phase shift in Slave mode Parallel mode[3] 33 BD modulation: 1⁄2 phase shift in Slave mode 100 AD modulation: no phase shift in Slave mode (open) BD modulation: no phase shift in Slave mode [1] RADS 4.7 k; See Table 13 on page 23. [2] RADS = 0 ; pin ADS is short circuited to pin AGND. [3] See Section 8.4.3 on page 14 for more detailed information. In I2C-bus mode, pin MOD is latched using the I2C-bus command IB3[D7] = 1. This avoids amplifier switching interference generating incorrect information on pin MOD. In non-I2C-bus mode or when IB3[D7] = 0, the information on pin MOD is latched when one of the TDF8599A’s outputs starts switching. 8.4.1 Modulation mode In non-I2C-bus mode, pin MOD is used to select either AD or BD modulation mode (see Table 8). In I2C-bus mode, the modulation mode is selected using an I2C-bus command. • AD modulation mode: the bridge halves switch in opposite phase. • BD modulation mode: the bridge halves switch in phase but the input signal for the modulators is inverted. Figure 10 and Figure 11 show simplified representations of AD and BD modulation. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 11 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier +VP INxP +VP OUTP OUTN INxN AD BD 001aai778 Fig 9. AD/BD modulation switching circuit INxP OUTxP 001aai779 a. Bridge half 1. INxN OUTxN 001aai780 b. Bridge half 2 switched in the opposite phase to bridge half 1. Fig 10. AD modulation TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 12 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier INxP OUTxP OUTxP - OUTxN 001aai781 a. Phase switching cycle. INxN OUTxN 001aai782 b. Inverted signal to the modulator. Fig 11. BD modulation 8.4.2 Phase staggering (Slave mode) In Slave mode with phase lock operation enabled, a phase shift with respect to the incoming clock signal can be selected to distribute the switching moments over time. In non-I2C-bus mode, 1⁄2 phase shift can be programmed using pin MOD. In I2C-bus mode, five different phase shifts (1⁄4 , 1⁄3 , 1⁄2 , 2⁄3 , 3⁄4 ) can be selected using the I2C-bus bits (IB3[D1:D3]). See Table 8 for selection of the phase shift in non-I2C-bus mode with pin MOD. An additional capacitor must be connected to pin SSM when 1⁄4 phase shift is used (see Figure 8). An example of using 1⁄2 phase shift for BD modulation is shown in Figure 12. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 13 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier OUT1P phase 0 OUT1N master OUT2P π OUT2N OUT1P 1π 2 OUT1N slave OUT2P 2π 3 OUT2N 001aai783 Fig 12. Master and slave operation with 1⁄2 phase shift 8.4.3 Parallel mode In Parallel mode; the two output stages operate in parallel to enlarge the drive capability. The inputs and outputs for Parallel mode must be connected on the Printed-Circuit Board (PCB) as shown in Figure 13. The parallel connection can be made after the output filter, as shown in Figure 13 or directly to the device output pins (OUTxP and OUTxN). + − IN1P OUT1N IN1N OUT1P − IN2N TDF8599A IN2P OUT2P MOD OUT2N + RMOD 001aak077 Fig 13. Parallel mode In Parallel mode, the channel 1 I2C-bus bits can be programmed using the I2C-bus. 8.5 Protection The TDF8599A includes a range of built-in protection functions. How the TDF8599A manages the various possible fault conditions for each protection is described in the following sections: TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 14 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier Table 9. Overview of protection types Protection type Reference Thermal foldback Section 8.5.1 Overtemperature Section 8.5.2 Overcurrent Section 8.5.3 Window Section 8.5.4 DC Offset Section 8.5.5 Undervoltage Section 8.5.6 Overvoltage Section 8.5.6 8.5.1 Thermal foldback Thermal Foldback Protection (TFP) is tripped when the average junction temperature exceeds the threshold level (145 C). TFP decreases amplifier gain such that the combination of power dissipation and Rth(j-a) create a junction temperature around the threshold level. The device will not completely switch off but remains operational at the lower output power levels. If the average junction temperature continues to increase, a second built-in temperature protection threshold level shuts down the amplifier completely. 8.5.2 Overtemperature protection If the average junction temperature (Tj) > 160 C, OverTemperature Protection (OTP) is tripped and the power stage shuts down immediately. 8.5.3 Overcurrent protection OverCurrent Protection (OCP) is tripped when the output current exceeds the maximum output current of 8 A. OCP regulates the output voltage such that the maximum output current is limited to 8 A. The amplifier outputs keep switching and the amplifier is NOT shutdown completely. This is called current limiting. OCP also detects when the loudspeaker terminals are short circuited or one of the amplifier’s demodulated outputs is short circuited to one of the supply lines. In either case, the shorted channel(s) are switched off. The amplifier can distinguish between loudspeaker impedance drops and a low-ohmic short across the load or one of the supply lines. This impedance threshold depends on the supply voltage used. When a short is made across the load causing the impedance to drop below the threshold level, the shorted channel(s) are switched off. They try to restart every 50 ms. If the short circuit condition is still present after 50 ms, the cycle repeats. The average power dissipation will be low because of this reduced duty cycle. When a channel is switched off due to a short circuit on one of the supply lines, Window Protection (WP) is activated. WP ensures the amplifier does not start-up after 50 ms until the supply line short circuit is removed. 8.5.4 Window protection Window Protection (WP) checks the PWM output voltage before switching from Standby mode to Mute mode (with both outputs switching) and is activated as follows: TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 15 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier • During the start-up sequence: – When the TDF8599A is switched from standby to mute (td(stb-mute)). When a short circuit on one of the output terminals (i.e. between VP or GND) is detected, the start-up procedure is interrupted and the TDF8599A waits for open circuit outputs. No large currents flow in the event of a short circuit to the supply lines because the check is performed before the power stages are enabled. • During operation: – A short to one of the supply lines trips OCP causing the amplifier channel to shutdown. After 50 ms the amplifier channel restarts and WP is activated. However, the corresponding amplifier channel will not start-up until the supply line short circuit has been removed. 8.5.5 DC offset protection DC Protection (DCP) is activated when the DC content in the demodulated output voltage exceeds a set threshold (typically 2 V). DCP is active in both Mute mode and Operating mode. Figure 14 shows how false triggering of the DCP by low frequencies in the audio signal is prevented using the external capacitor (CF) to generate a cut-off frequency. OUT1P OUT1N OUT2P OUT2N V to I Vref V to I 50 kΩ IB1[D6] IB2[D6] DCP CF DIAG IB1[D7] DB1[D2] S Q S4 IB2[D7] S3 switch off channels 001aak078 Fig 14. DC offset protection and diagnostic output In I2C-bus mode, DC offsets generate a voltage shift around the bias voltage. When the voltage shift exceeds threshold values, the offset alarm bit DB1[D2] is set and if bit IB1[D7] is not set, diagnostic information is also given. Any detected offset shuts down both channels when bit IB2[D7] is not set. To restart the TDF8599A in I2C-bus mode, pin EN must be toggled or DCP disabled by connecting pin DCP to pin AGND. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 16 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier In non-I2C-bus mode, when an offset is detected, DCP always gives diagnostic information on pin DIAG and shuts down both channels. Connecting a capacitor between pins DCP and AGND enables DC offset protection. Connecting pin DCP to pin AGND disables DCP in both I2C-bus and non-I2C-bus mode. 8.5.6 Supply voltages UnderVoltage Protection (UVP) is activated when the supply voltage drops below the UVP threshold. UVP triggers the UVP circuit causing the system to first mute and then stop switching. When the supply voltage rises above the threshold level, the system restarts. OverVoltage Protection (OVP) is activated when the supply voltage exceeds the OVP threshold. The OVP (or load dump) circuit is activated and the power stages are shutdown. An overview of all protection circuits and the amplifier states is given in Table 10. 8.5.7 Overview of protection circuits and amplifier states Table 10. Overview of TDF8599A protection circuits and amplifier states Protection circuit name Amplifier state Complete shutdown Channel shutdown Restart[1] TFP N[2] N[2] Y[3] OTP Y N Y[3] OCP N Y Y[4] WP N Y Y DCP Y N N[5] UVP Y N Y[6] OVP Y N Y [1] When fault is removed. [2] Amplifier gain depends on the junction temperature and size of the heat sink. [3] TFP influences restart timing depending on heat sink size. [4] Shorted load causes a restart of the channel every 50 ms. [5] Latched protection is reset by toggling pin EN or by disabling DCP in I2C-bus mode. [6] In I2C-bus mode deep supply voltage drops will cause a Power-On Reset (POR). The restart requires an I2C-bus command. 8.6 Diagnostic output 8.6.1 Diagnostic table The diagnostic information for I2C-bus mode and non-I2C-bus mode is shown in Table 11. The instruction bitmap and data bytes are described in Table 14 and Table 15. Pins DIAG and CLIP have an open-drain output which must have an external pull-up resistor connected to an external voltage. Pins CLIP and DIAG can show both fixed and I2C-bus selectable information. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 17 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier Pin DIAG goes LOW when a short circuit to one of the amplifier outputs occurs. The microprocessor reads the failure information using the I2C-bus. The I2C-bus bits are set for a short circuit. These bits can be reset with the I2C-bus read command. Even after the short has been removed, the microprocessor knows what was wrong after reading the I2C-bus. Old information is read when a single I2C-bus read command is used. To read the current information, two read commands must be sent, one after another. When selected, pin DIAG gives the current diagnostic information. Pin DIAG is released instantly when the failure is removed, independent of the I2C-bus latches. Table 11. Available data on pins DIAG and CLIP Diagnostic Power-on reset I2C-bus mode Non-I2C-bus mode Pin DIAG Pin CLIP Pin DIAG Pin CLIP yes yes yes yes UVP or OVP yes no yes no Clip detection no selectable no yes Temperature pre-warning no selectable no yes OCP/WP yes no yes no DCP selectable no yes no OTP yes no yes no When OCP is triggered, the open-drain DIAG output is activated. The diagnostic output signal during different short circuit conditions is illustrated in Figure 15. shorted load short to GND or VP line AMPLIFIER RESTART NO RESTART pull up V AGND = 0 V ≈50 ms ≈50 ms ≈50 ms 001aai786 Fig 15. Diagnostic output for short circuit conditions 8.6.2 Load identification (I2C-bus mode only) 8.6.2.1 DC load detection DC load detection is only available in I2C-bus mode and is controlled using bit IB2[D2]. The default setting is logic 0 for bit IB2[D2] which disables DC load detection. DC load detection is enabled when bit IB2[D2] = 1. Load detection takes place before the class-D amplifier output stage starts switching in Mute mode and the start-up time from Standby mode to Mute mode is increased by tdet(DCload) (see Figure 16). TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 18 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier VP DRIVER HIGH B OUTN PWM CONTROL DRIVER LOW PGND1 RL VP DRIVER HIGH OUTP PWM CONTROL DRIVER LOW PGND2 001aai787 Fig 16. DC load detection circuit out (V) out− out+ t (s) tdet(DCload) td(stb-mute) 001aai788 Fig 17. DC load detection procedure The capacitor connected to pin SEL_MUTE (see Figure 3 on page 6) is used to create an inaudible current test pulse, drawn from the positive amplifier output. The diagnostic ‘speaker load’ (or ‘open load’), based on the voltage difference between pins OUTxP and OUTxN is shown in Figure 18. SPEAKER LOAD 0Ω OPEN LOAD 25 Ω 350 Ω 001aaj956 Fig 18. DC load detection limits Remark: DC load detection identifies a short circuited speaker as a valid speaker load. OCP detection, using byte DB1[D3] for channel 1 and byte DB2[D3] for channel 2, performs diagnostics on shorted loads. However, the diagnostics are performed after the DC load detection cycle has finished and once the amplifier is in Operating mode. The result of the DC load detection is stored in bits DB1[D4] and DB2[D4]. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 19 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier Table 12. Interpretation of DC load detection bits DC load bits DB1[D4] and DB2[D4] OCP bits DB1[D3] and DB2[D3] Description 0 0 speaker load 0 1 shorted load 1 0 open load Remark: After DC load detection has been performed, the DC load valid bit DB1[D6] must be set. The DC load data bits are only valid when bit DB1[D6] = 1. When DC load detection is interrupted by a sudden large change in supply voltage (triggered by UVP or OVP) or if the amplifier hangs up, the DC load valid bit is reset to DB1[D6] = 0. The DC load detection enable bit IB2[D2] must be reset after the DC load protection cycle to release any amplifier hang-up. Once the DC load detection cycle has finished, DC load detection can be restarted by toggling the DC load detection enable bit IB2[D2]. However, this can only be used if both amplifier channels have not been enabled with bit IB1[D1] or bit IB2[D1]. See Section 8.6.2.2 “Recommended start-up sequence with DC load detection enabled” for detailed information. 8.6.2.2 Recommended start-up sequence with DC load detection enabled The flow diagram (Figure 19) illustrates the TDF8599A’s ability to perform a DC load detection without starting the amplifiers. After a DC load detection cycle finishes without setting the DC load valid bit DB1[D6], DC load detection is repeated (when bit IB2[D2] is toggled). To limit the maximum number of DC load detection cycle loops, a counter and limit have been added. The loop exits after the predefined number of cycles (COUNTMAX), if the DC load detection cycle finishes with an invalid detection. Depending on the application needs, the invalid DC load detection cycle can be handled as follows: • the amplifier can be started without DC load detection • the DC load detection loop can be executed again TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 20 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier I2C-bus TX startup enable DC load disable channel 1 disable channel 2 IB1[D0] = 1 IB2[D2] = 1 IB1[D1] = 1 IB2[D1] = 1 COUNT = 0 WAIT DC load DB1[D4] = 1 DB2[D4] = 1 DB1[D6] = 1 IB1[D0] = 1 IB2[D2] = 1 IB1[D1] = 1 IB2[D1] = 1 I2C-bus RX channel 1 open load channel 2 open load DC load valid I2C-bus TX startup enable DC load disable channel 1 disable channel 2 COUNT ≤ COUNTMAX COUNT = COUNT + 1 YES ERROR HANDLING start amplifier anyway I2C-bus TX IB1[D0] = 1 IB2[D2] = 0 IB1[D1] = 1 IB2[D1] = 1 DB1[D6] = 1 DC load valid restart DC load NO startup disable DC load disable channel 1 disable channel 2 NO YES IB1[D0] = 1 IB2[D2] = 0 IB1[D1] = 0 IB2[D1] = 0 I2C-bus TX startup disable DC load enable channel 1 enable channel 2 001aaj061 Fig 19. Recommended start-up sequence with DC load detection enabled 8.6.2.3 AC load detection AC load detection is only available in I2C-bus mode and is controlled using bit IB3[D4]. The default setting for bit IB3[D4] = 0 disables AC load detection. When AC load detection is enabled (bit IB3[D4] = 1), the amplifier load current is measured and compared with a reference level. Pin CLIP is activated when this threshold is reached. Using this information, AC load detection can be performed using a predetermined input signal frequency and level. The frequency and signal level should be chosen so that the load current exceeds the programmed current threshold when the AC coupled load (tweeter) is present. 8.6.2.4 CLIP detection CLIP detection gives information for clip levels 0.2 %. Pin CLIP is used as the output for the clip detection circuitry on both channel 1 and channel 2. Setting either bit IB1[D5] or bit IB2[D5] to logic 0 defines which channel reports clip information on the CLIP pin. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 21 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 8.6.3 Start-up and shutdown sequence To prevent switch on or switch off ‘pop noises’, a capacitor (CSVRR) connected to pin SVRR is used to smooth start-up and shutdown. During start-up and shutdown, the output voltage tracks the voltage on pin SVRR. Increasing CSVRR results in a longer start-up and shutdown time. Enhanced pop noise performance is achieved by muting the amplifier until the SVRR voltage reaches its final value and the outputs start switching. The capacitor value on pin SEL_MUTE (CON) determines the unmute and mute timing. The voltage on pin SEL_MUTE determines the amplifier gain. Increasing CON increases the unmute and mute times. In addition, a larger CON value increases the DC load detection cycle. When the amplifier is switched off with an I2C-bus command or by pulling pin EN LOW, the amplifier is first muted and then capacitor (CSVRR) is discharged. In Slave mode, the device enters the off state immediately after capacitor (CSVRR) is discharged. In Master mode, the clock is kept active by an additional delay (td(2)) of approximately 50 ms to allow slave devices to enter the off state. When an external clock is connected to pin OSCIO (in Slave mode), the clock must remain active during the shutdown sequence for delay (td(1)) to ensure that the slaved TDF8599A devices are able to enter the off state. VDDA DIAG td(1) EN ACGND td(3) IB1[D0] and IB2[D0] = 0 td(mute-fgain) mute delay td(2) SEL_MUTE SVRR twake td(stb-mute) tdet(DCload) OUTn 001aai790 (1) Shutdown hold delay. (2) Master mode shutdown delay. (3) Shutdown delay. Fig 20. Start-up and shutdown timing in I2C-bus mode with DC load detection TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 22 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier VDDA DIAG td(2) td(1) EN ACGND td(mute-fgain) td(3) SEL_MUTE SVRR td(stb-mute) OUTn 001aai791 (1) Shutdown hold delay. (2) Shutdown delay. (3) Master mode shutdown delay. Fig 21. Start-up and shutdown timing in non-I2C-bus mode 9. I2C-bus specification TDF8599A address with hardware address select. Table 13. I2C-bus write address selection using pins MOD and ADS RADS[1] (k) RMOD[1] (k) R/W Stereo mode Parallel mode 0[2] 4.7 13 33 100 open Open 58h 68h 78h 58h 68h 78h 1 = Read from TDF8599A 100 56h 66h 76h 56h 66h 76h 0 = Write to TDF8599A 33 54h 64h 74h 54h 64h 74h 13 52h 62h 72h 52h 62h 72h 4.7 50h 60h 70h 50h 60h 70h 0[2] non-I2C-bus mode select [1] Required external resistor accuracy is 1 %. [2] Short circuited to ground. In I2C-bus mode, pins MOD and ADS can be latched using the I2C-bus command IB3[D7] = 1. This avoids disturbances from amplifier outputs of other TDF8599A devices in the same application switching and generating incorrect information on the MOD and ADS pins. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 23 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier In non-I2C mode or when IB3[D7] = 0, the information on the MOD and ADS pins is latched when one of the TDF8599A’s outputs starts switching. SCL SCL SDA SDA Mμp START Mμp STOP SLAVE (1) SLAVE (1) (2) 001aai793 001aai792 (1) When SCL is HIGH, SDA changes to form the start or stop condition. Fig 22. I2C-bus (1) SDA is allowed to change. (2) All data bits must be valid on the positive edges of SCL. start and stop conditions SCL 1 MSB − 1 MSB SDA 2 Mμp START Fig 23. Data bits sent from Master microprocessor (Mp) 7 8 LSB + 1 ADDRESS 9 ACK 1 2 MSB − 1 MSB WRITE SLAVE 7 LSB + 1 8 LSB 9 ACK WRITE DATA STOP ACK(1) ACK 001aai794 (1) To stop the transfer after the last acknowledge a stop condition must be generated. Fig 24. I2C-bus write SCL 1 MSB SDA Mμp START SLAVE 2 7 MSB − 1 LSB + 1 ADDRESS 8 9 ACK 1 MSB 2 7 MSB − 1 LSB + 1 8 9 LSB ACK(1) READ ACKNOWLEDGE STOP READ DATA 001aai795 (1) To stop the transfer, the last byte must not be acknowledged (SDA is HIGH) and a stop condition must be generated. Fig 25. I2C-bus read TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 24 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 9.1 Instruction bytes If R/W bit = 0, the TDF8599A expects three instruction bytes: IB1, IB2 and IB3. After a power-on reset, all unspecified instruction bits must be set to zero. Table 14. Instruction byte descriptions Bit Value Description Instruction byte IB1 Instruction byte IB2 Instruction byte IB3 D7 0 offset detection on pin DIAG offset protection on latch information on pins ADS and MOD when the amplifier starts switching 1 no offset detection on pin DIAG offset protection off latch information on pins ADS and MOD; see Section 9 on page 23 D6 0 channel 1 offset monitoring on channel 2 offset monitoring on - 1 channel 1 offset monitoring off channel 2 offset monitoring off - D5 0 channel 1 clip detect on pin CLIP channel 2 clip detect on pin CLIP - 1 channel 1 no clip detect on pin CLIP channel 2 no clip detect on pin CLIP - 0 disable frequency hopping thermal pre-warning on pin CLIP disable AC load detection D4 D3 D2 D1 D0 hopping[1] 1 enable frequency no thermal pre warning on pin CLIP enable AC load detection 0 oscillator frequency as set with Rosc 10 % temperature pre-warning at 140 C oscillator phase shift bits IB3[D3] to IB3[D1][2] 1 oscillator frequency as set with Rosc + 10 % temperature pre-warning at 120 C 0 - DC-load detection disabled 1 - DC-load detection enabled 0 channel 1 enabled channel 2 enabled 1 channel 1 disabled channel 2 disabled 0 TDF8599A in Standby mode all channels operating AD modulation 1 TDF8599A in Mute or Operating modes[3] all channels muted BD modulation [1] See Section 8.3.3 on page 9 for information on IB1[D4] and IB1[D3]. [2] See Table 15 “Phase shift bit settings” for information on IB3[D3] to IB3[D1]. [3] See Table 4 for information on IB1[D0] and IB2[D0]. Table 15. D3 D2 D1 Phase 0 0 0 0 0 0 1 1⁄ 4 0 1⁄ 3 1 1⁄ 2 0 0 TDF8599A Product data sheet Phase shift bit settings 1 1 1 0 0 2⁄ 3 1 0 1 3⁄ 4 All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 25 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 9.2 Data bytes If R/W = 1, the TDF8599A sends two data bytes to the microprocessor (DB1 and DB2). All short diagnostic and offset protection bits are latched. In addition, all bits are reset after a read operation except the DC load detection bits (DBx[D4], DB1[D6]). The default setting for all bits is logic 0. In Parallel mode, the diagnostic information is stored in byte DB1. Table 16. Description of data bytes Bit Value DB1 channel 1 DB2 channel 2 D7 0 at least 1 instruction bit set to logic 1 below maximum temperature 1 all instruction bits are set to logic 0 maximum temperature protection activated 0 invalid DC load data no temperature warning 1 valid DC load data temperature pre-warning active 0 no overvoltage no undervoltage 1 overvoltage protection active undervoltage protection active 0 speaker load channel 1 speaker load channel 2 1 open load channel 1 open load channel 2 0 no shorted load channel 1 no shorted load channel 2 1 shorted load channel 1 shorted load channel 2 0 no offset reserved 1 offset detected reserved D1 0 no short to VP channel 1 no short to VP channel 2 1 short to VP channel 1 short to VP channel 2 D0 0 no short to ground channel 1 no short to ground channel 2 1 short to ground channel 1 short to ground channel 2 D6 D5 D4 D3 D2 Data byte DB1[D7] indicates whether the instruction bits have been set to logic 0. In principle, DB1[D7] is set after a POR or when all the instruction bits are programmed to logic 0. Pin DIAG is driven HIGH when bit DB1[D7] = 1. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 26 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 10. Limiting values Table 17. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VP supply voltage Operating mode 40 V +50 V V 8 - A stereo mode - 18 A parallel mode - 12 A pins SCL, SDA, ADS, MOD, SSM, OSCIO, EN and SEL_MUTE 0 5.5 V pins IN1N, IN1P, IN2N and IN2P 0 10 V repetitive peak output current maximum output current limiting IOM peak output current maximum; non-repetitive [2] Vo output voltage pins DIAG and CLIP 0 10 V RESR equivalent series resistance as seen between pins VP and PGNDn - 350 m Tj junction temperature - 150 C Tstg storage temperature 55 +150 C Tamb ambient temperature 40 +85 C - 2000 V - 500 V electrostatic discharge voltage HBM [3] C = 100 pF; Rs = 1.5 k CDM [4] non-corner pins corner pins V(prot) Product data sheet - 50 IORM VESD TDF8599A Unit - [1] load dump; duration 50 ms; tr > 2.5 ms input voltage Max 1 off state Vi Min protection voltage AC and DC short circuit voltage of output pins across load and to supply and ground [5] - 750 V 0 VP V [1] Floating condition assumed for outputs. [2] Current limiting concept. [3] Human Body Model (HBM). [4] Charged-Device Model (CDM). [5] The output pins are defined as the output pins of the filter connected between the TDF8599A output pins and the load. All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 27 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 11. Thermal characteristics Table 18. Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-c) Conditions Typ Unit thermal resistance from junction to ambient in free air 35 K/W thermal resistance from junction to case 1 K/W 12. Static characteristics Table 19. Static characteristics VP = VDDA = 14.4 V; fosc = 320 kHz; 40 C < Tamb < +85 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 8 14.4 35 V Supply VP supply voltage IP supply current off state; Tj 85 C; VP = 14.4 V - 2 10 A Iq(tot) total quiescent current Operating mode; no load, snubbers and filter connected - 90 120 mA Tj = 25 C - 170 180 m Tj = 100 C - 235 250 m Series resistance output switches RDSon I2C-bus drain-source on-state resistance power switch; interface: pins SCL and SDA VIL LOW-level input voltage 0 - 1.5 V VIH HIGH-level input voltage 2.3 - 5.5 V VOL LOW-level output voltage 0 - 0.4 V pin SDA; Iload = 5 mA Address, phase shift and modulation mode select: pins ADS and MOD Vi input voltage pins not connected [1] 1.5 2 2.7 V Ii input current pins shorted to GND [1] 80 105 160 A 0 - 0.8 V 2 - 5 V pin EN; Mute mode or Operating mode; non-I2C-bus mode 2 - 5 V pin SEL_MUTE; Mute mode; voltage on pin EN > 2 V 0 - 0.8 V pin SEL_MUTE; Operating mode; voltage on pin EN > 2 V 3 - 5 V Enable and SEL_MUTE input: pins EN and SEL_MUTE Vi input voltage pin EN; off state pin EN; Standby mode; mode Ii TDF8599A Product data sheet input current I2C-bus pin EN; 2.5 V - - 5 A pin SEL_MUTE; Operating mode; 0.8 V - - 50 A All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 28 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier Table 19. Static characteristics …continued VP = VDDA = 14.4 V; fosc = 320 kHz; 40 C < Tamb < +85 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 0.2 - % 1 2 3 V Diagnostic output THDclip total harmonic distortion clip detection level Vth(offset) threshold voltage for offset detection VOL LOW-level output voltage DIAG or CLIP pins activated; Io = 1 mA - - 0.3 V IL leakage current DIAG and CLIP pins; diagnostic not activated - - 50 A - 2.45 - V input ACGND pin 2 2.45 3 V half supply reference SVRR pin 6.9 7.2 7.5 V - - 25 mV - - 70 mV stabilizer output in Mute mode and Operating mode 8 10 12 V undervoltage; amplifier is muted 6.8 7.2 8 V overvoltage; load dump protection is activated 37 38 - V VP that a POR occurs at 3 3.7 4.6 V current limiting concept 8 9.5 11 A 155 - 160 C [2][3] Audio inputs; pins IN1N, IN1P, IN2N and IN2P Vi input voltage SVRR voltage and ACGND input bias voltage in Mute and Operating modes Vref reference voltage Amplifier outputs; pins OUT1N, OUT1P, OUT2N and OUT2P VO(offset) output offset voltage BTL; Mute mode BTL; Operating mode [4][6] Stabilizer output; pins VSTAB1 and VSTAB2 Vo output voltage Voltage protections V(prot) protection voltage Current protection IO(ocp) overcurrent protection output current Temperature protection Tprot protection temperature Tact(th_fold) thermal foldback activation temperature gain = 1 dB 140 - 150 C Tj(AV)(warn1) average junction temperature for pre-warning 1 IB2[D3] = 0; non-I2C-bus mode - 140 150 C Tj(AV)(warn2) average junction temperature for pre-warning 2 IB2[D3] = 1 - 120 130 C DC load detection levels: I2C-bus mode only[7] Zth(load) load detection threshold impedance for normal speaker load; DB1[D4] = 0; DB2[D4] = 0 - - 25 Zth(open) open load detection threshold impedance DB1[D4] = 1; DB2[D4] = 1 350 - - 250 500 700 mA AC load detection levels: I2C-bus mode only Ith(o)det(load)AC TDF8599A Product data sheet AC load detection output threshold current All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 29 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier Table 19. Static characteristics …continued VP = VDDA = 14.4 V; fosc = 320 kHz; 40 C < Tamb < +85 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Start-up/shut-down/mute timing twake wake-up time on pin EN before first I2C-bus transmission is recognized [5] - - 500 s tdet(DCload) DC load detection time CON = 470 nF [5] - 380 - ms td(stb-mute) delay time from standby to mute measured from amplifier enabling to start of unmute (no DC load detection); CSVRR = 47 F CON = 470 nF - 140 - ms td(mute-fgain) mute to full gain delay time CON = 470 nF - 15 - ms td delay time shutdown delay time from EN pin LOW to SVRR LOW; voltage on pin SVRR < 0.1 V; CSVRR = 47 F 200 350 550 ms shutdown delay time from EN pin LOW to SVRR LOW; voltage on pin SVRR < 0.1 V; CSVRR = 47 F; VP = 35 V 300 400 700 ms shutdown hold delay time from pin EN LOW to ACGND LOW; voltage on pin ACGND < 0.1 V; Master mode - 370 - ms hold delay in Master mode to allow slaved devices to shutdown fosc = 320 kHz - 50 - ms stereo mode 1.6 4 - parallel mode 0.8 - - stereo mode 3.2 4 - parallel mode 1.6 - - [6] Speaker load impedance RL load resistance at supply voltage equal to or below 25 V at supply voltage equal to or below 35 V [1] Required resistor accuracy for pins ADS and MOD is 1 %; see Section 9 on page 23. [2] Maximum leakage current from DCP pin to ground = 3 A. [3] The output offset values can be either positive or negative. The Vth(offset) limit values (excluding Typ) are the valid absolute values. [4] DC output offset voltage is applied to the output gradually during the transition between Mute mode and Operating mode. [5] I2C-bus mode only. [6] The transition time between Mute mode and Operating mode is determined by the time constant on the SEL_MUTE pin. [7] The DC load valid bit DB1[D6] must be used; Section 8.6.2.1 on page 18. The DC load enable bit IB2[D2] must be reset after each load detection cycle to prevent amplifier hang-up incidents. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 30 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 12.1 Switching characteristics Table 20. Switching characteristics VP = VDDA = 14.4 V; 40 C < Tamb < +85 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit external clock frequency; Rosc = 39 k - 320 - kHz internal fixed frequency and Spread spectrum mode frequency based on the resistor value connected to pin OSCSET for the master setting 300 - 450 kHz Internal oscillator fosc oscillator frequency Master/slave setting (OSCIO pin) Rosc oscillator resistance resistor value on pin OSCSET; master setting 26 39 49 k VOL LOW-level output voltage output - - 0.8 V VOH HIGH-level output voltage output 4 - - V VIL LOW-level input voltage input - - 0.8 V VIH HIGH-level input voltage input 4 - - V ftrack tracking frequency PLL enabled 300 - 500 kHz Nslave number of slaves driven by one master 12 - - Spread spectrum mode setting fosc oscillator frequency variation between maximum and minimum values; Spread spectrum mode activated - 10 - % fsw switching frequency Spread spectrum mode activated; CSSM = 1 F - 7 - Hz change positive; IB1[D4] = 1; IB1[D3] = 1 - fosc + 10 % - kHz change negative; IB1[D4] = 1; IB1[D3] = 0 - fosc 10 % - kHz Frequency hopping fosc(int) internal oscillator frequency Timing tr rise time PWM output; Io = 0 A - 10 - ns tf fall time PWM output; Io = 0 A - 10 - ns tw(min) minimum pulse width Io = 0 A - 80 - ns TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 31 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 13. Dynamic characteristics Table 21. Dynamic characteristics VP = VDDA = 14.4 V; RL = 4 ; fi = 1 kHz; fosc = 320 kHz; Rs(L) < 0.04 [1]; 40 C < Tamb < +85 C; Stereo mode; unless otherwise specified. Symbol Parameter output power Po Conditions Min Typ Max Unit VP = 14.4 V; THD = 1 %; RL = 4 18 20 - W VP = 14.4 V; THD = 10 %; RL = 4 23 25 - W square wave (EIAJ); RL = 4 - 40 - W VP = 35 V; THD = 10 %; RL = 4 - 135 - W VP = 14.4 V; THD = 1 %; RL = 2 26 29 - W VP = 14.4 V; THD = 10 %; RL = 2 34 38 - W - 60 - W VP = 14.4 V; THD = 10 %; RL = 2 - 50 - W VP = 35 V; THD = 10 %; RL = 2 - 250 - W Stereo mode: [2] square wave (EIAJ); RL = 2 Parallel mode: [2] VP = 25 V; THD = 1 %; RL = 1 THD total harmonic distortion 135 150 - W fi = 1 kHz; Po = 1 W [3] - 0.02 0.1 % fi = 10 kHz; Po = 1 W [3] - 0.02 0.1 % 25 26 27 dB - 70 - dB Gv(cl) closed-loop voltage gain cs channel separation fi = 1 kHz; Po = 1 W SVRR supply voltage rejection ratio Operating mode fripple = 100 Hz [4] 60 70 - dB fripple = 1 kHz [4] 60 70 - dB [4] 60 70 - dB [4] - 90 - dB 60 100 150 k Mute mode fripple = 1 kHz off state and Standby mode fripple = 1 kHz Zi(dif) differential input impedance Vn(o) output noise voltage Operating mode BD mode [5] - 60 77 V AD mode [5] - 100 140 V BD mode [6] - 25 32 V AD mode [6] - 85 110 V - 0 1 dB 66 - - dB Mute mode bal(ch) channel balance mute mute attenuation CMRR common mode rejection ratio Vi(cm) = 1 V RMS 65 80 - dB po output power efficiency Po = 20 W - 90 - % [7] [1] Rs(L) is the sum of the inductor series resistance from the low-pass LC filter in the application together with all resistance from PCB traces or wiring between the output pin of the TDF8599A and the inductor to the measurement point. LC filter dimensioning is L = 10 H, C = 1 F for 4 load and L = 5 H, C = 2.2 F for 2 load. [2] Output power is measured indirectly based on RDSon measurement. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 32 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier [3] Total harmonic distortion is measured at the bandwidth of 22 Hz to 20 kHz, AES brick wall. The maximum limit is guaranteed but may not be 100 % tested. [4] Vripple = Vripple(max) = 2 V (p-p); Rs = 0 . [5] B = 22 Hz to 20 kHz, AES brick wall, Rs = 0 . [6] B = 22 Hz to 20 kHz, AES brick wall, independent of Rs. [7] Vi = Vi(max) = 0.5 V RMS. 14. Application information 14.1 Output power estimation (Stereo mode) The output power, just before clipping, can be estimated using Equation 5: 2 RL f osc 1 – t ---------------------------------------------------- -------- V P w min R L + 2 R DSon + R s 2 P o = ------------------------------------------------------------------------------------------------------------------------------------- W 2 RL (5) Where, • • • • • • VP = supply voltage (V) RL = load impedance () RDSon = drain source on-state resistance () Rs = series resistance of the output inductor () tw(min) = minimum pulse width(s) depending on output current (s) fosc = oscillator frequency in Hz (typically 320 kHz) The output power at 10 % THD can be estimated by: P o 2 = 1.25 P o 1 where Po(1) = 0.5 % and Po(2) = 10 %. Figure 26 and Figure 27 show the estimated output power at THD = 0.5 % and THD = 10 % as a function of supply voltage for different load impedances in stereo mode. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 33 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 001aaj181 140 Po (W) 120 001aaj182 160 Po (W) 120 100 80 (1) 80 (1) (2) 60 (2) 40 40 20 0 0 8 16 24 32 40 8 16 VP (V) 24 32 40 VP (V) THD = 0.5 %. THD = 10 %. RDSon = 0.2 (at Tj = 100 C), Rs = 0.05 , tw(min) = 190 ns and IO(ocp) = 8 A (minimum). RDSon = 0.2 (at Tj = 100 C), Rs = 0.05 , tw(min) = 190 ns and IO(ocp) = 8 A (minimum). (1) RL = 2 . (1) RL = 2 . (2) RL = 4 . (2) RL = 4 . Fig 26. Po as a function of VP in stereo mode with THD = 0.5 % Fig 27. Po as a function of VP in stereo mode with THD = 10 % 14.2 Output power estimation (Parallel mode) Figure 28 and Figure 29 show the estimated output power at THD = 0.5 % and THD = 10 % as a function of the supply voltage for different load impedances in parallel mode. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 34 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 001aaj183 250 001aaj184 300 Po (W) 250 Po (W) 200 200 150 (1) (1) 150 (2) 100 100 (2) (3) (3) 50 50 0 0 8 16 24 32 40 8 16 VP (V) 24 32 40 VP (V) THD = 0.5 %. THD = 10 %. RDSon = 0.1 (at Tj = 100 C), Rs = 0.025 , tw(min) = 190 ns and IO(ocp) = 16 A (minimum). RDSon = 0.1 (at Tj = 100 C), Rs = 0.025 , tw(min) = 190 ns and IO(ocp) = 16 A (minimum). (1) RL = 1 . (1) RL = 1 . (2) RL = 2 . (2) RL = 2 . (3) RL = 4 . (3) RL = 4 . Fig 28. Po as a function of VP in parallel mode with THD = 0.5 % Fig 29. Po as a function of VP parallel mode with THD = 10 % 14.3 Output current limiting The peak output current is internally limited to 8 A maximum. During normal operation, the output current should not exceed this threshold level otherwise the output signal will be distorted. The peak output current can be estimated using Equation 6: VP I o ----------------------------------------------------- 8 [A] R L + 2 R DSon + R s • • • • • (6) Io = output current (A) VP = supply voltage (V) RL = load impedance () RDSon = on-resistance of power switch () Rs = series resistance of output inductor () Example: A 2 speaker can be used with a supply voltage of 19 V before current limiting is triggered. Current limiting (clipping) avoids audio holes but can cause distortion similar to voltage clipping. In Parallel mode, the output current is internally limited above 16 A. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 35 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 14.4 Speaker configuration and impedance A flat-frequency response (due to a 2nd order Butterworth filter) is obtained by changing the low-pass filter components (LLC, CLC) based on the speaker configuration and impedance. Table 22 shows the required values. Table 22. Filter component values Load impedance () LLC (H) CLC (F) 1 2.5 4.4 2 5 2.2 4 10 1 Remark: When using a 1 load impedance in Parallel mode, the outputs are shorted after the low-pass filter switches two 2 filters in parallel. 14.5 Heat sink requirements In most applications, it is necessary to connect an external heat sink to the TDF8599A. Thermal foldback activates at Tj = 140 C. The expression below shows the relationship between the maximum power dissipation before activation of thermal foldback and the total thermal resistance from junction to ambient: T j max – T amb R th j-a = ----------------------------------- K/W P max (7) Pmax is determined by the efficiency () of the TDF8599A. The efficiency measured as a function of output power is given in Figure 43. The power dissipation can be derived as a function of output power (see Figure 42). Example 1: • • • • • • VP = 14.4 V Po = 2 25 W into 4 (THD = 10 % continuous) Tj(max) = 140 C Tamb = 25 C Pmax = 5.8 W (from Figure 42) The required Rth(j-a) = 115 C / 5.8 W = 19 K/W The total thermal resistance Rth(j-a) consists of: Rth(j-c) + Rth(c-h) + Rth(h-a) Where: • Thermal resistance from junction to case (Rth(j-c)) = 1 K/W • Thermal resistance from case to heat sink (Rth(c-h)) = 0.5 K/W to 1 K/W (depending on mounting) • Thermal resistance from heat sink to ambient (Rth(h-a)) would then be 19 (1 + 1) = 17 K/W. If an audio signal has a crest factor of 10 (the ratio between peak power and average power = 10 dB) then Tj will be much lower. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 36 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier Example 2: • • • • • • VP = 14.4 V Po = 2 (25 W / 10) = 2 2.5 W into 4 (audio with crest factor of 10) Tamb = 25 C Pmax = 2.5 W Rth(j-a) = 19 K/W Tj(max) = 25 C + (2.5 W 19 K/W) = 72 C 14.6 Curves measured in reference design 001aaj185 102 THD + N (%) THD + N (%) 10 10 1 1 10−1 10−1 (3) (1) 10−3 10−1 (3) (2) (2) 10−2 001aaj186 102 10−2 1 102 10 (1) 10−3 10−1 1 Po (W) (1) VP = 14.4 V; RL = 2 at 100 Hz. (1) VP = 14.4 V; RL = 4 at 100 Hz. (2) VP = 14.4 V; RL = 2 at 1 kHz. (2) VP = 14.4 V; RL = 4 at 1 kHz. (3) VP = 14.4 V, RL = 2 at 6 kHz. (3) VP = 14.4 V, RL = 4 at 6 kHz. Fig 30. THD + N as a function of output power with a 2 load; VP = 14.4 V TDF8599A Product data sheet 102 10 Po (W) Fig 31. THD + N as a function of output power with a 4 load; VP = 14.4 V All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 37 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 001aaj187 102 001aaj188 102 THD + N (%) 10 THD + N (%) 10 1 1 (3) 10−1 (2) (1) 10−2 10−3 10−1 (3) 10−1 (2) 10−2 1 10 102 103 (1) 10−3 10−1 1 10 102 Po (W) (1) VP = 35 V; RL = 2 at 100 Hz. (1) VP = 35 V; RL = 4 at 100 Hz. (2) VP = 35 V; RL = 2 at 1 kHz. (2) VP = 35 V; RL = 4 at 1 kHz. (3) VP = 35 V, RL = 2 at 6 kHz. (3) VP = 35 V, RL = 4 at 6 kHz. Fig 32. THD + N as a function of output power with a 2 load; VP = 35 V 001aaj190 1 103 Po (W) Fig 33. THD + N as a function of output power with a 4 load; VP = 35 V 001aaj189 1 THD + N (%) THD + N (%) 10−1 10−1 (2) 10−2 (2) 10−2 (1) (1) 10−3 10 102 103 104 105 10−3 10 102 103 f (Hz) (1) VP = 14.4 V; RL = 2 at 1 W. (1) VP = 14.4 V; RL = 4 at 1 W. (2) VP = 14.4 V; RL = 4 at 10 W. Fig 34. THD + N as a function of frequency with a 2 load, BD modulation; VP = 14.4 V Product data sheet 105 f (Hz) (2) VP = 14.4 V; RL = 2 at 10 W. TDF8599A 104 Fig 35. THD + N as a function of frequency with a 4 load, BD modulation; VP = 14.4 V All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 38 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 001aaj191 1 001aaj192 30 G (dB) THD + N (%) 28 10−1 26 24 10−2 (2) (1) 22 10−3 10 102 103 104 105 20 10 102 103 104 f (Hz) 105 f (Hz) (1) VP = 35 V; RL = 2 at 1 W. (2) VP = 35 V; RL = 2 at 10 W. Fig 36. THD + N as a function of frequency with a 2 load, BD modulation; VP = 35 V 001aaj193 160 Po (W) Fig 37. Gain as a function of frequency 001aaj194 240 Po (W) 200 (3) 120 (3) 160 (2) 80 120 (2) (1) 80 (1) 40 40 0 0 10 14 18 22 26 30 10 15 20 VP (V) 35 f = 1 kHz; RL = 4 . (1) THD = 1 %. (1) THD = 1 %. (2) THD = 10 %. (2) THD = 10 %. (3) Maximum output power. (3) Maximum output power. Fig 38. Output power as a function of supply voltage with a 2 load Product data sheet 30 VP (V) f = 1 kHz; RL = 2 . TDF8599A 25 Fig 39. Output power as a function of supply voltage with a 4 load All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 39 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 001aaj195 −60 αcs (dB) −70 001aaj196 −60 (2) αcs (dB) −70 (1) −80 −80 −90 −90 (2) −100 10 102 103 104 105 −100 (1) 102 10 103 104 f (Hz) 105 f (Hz) VP = 14.4 V; Ri = 4 ; Po = 1 W. VP = 14.4 V; Ri = 4 ; Po = 10 W. (1) Channel 1 to channel 2. (1) Channel 1 to channel 2. (2) Channel 2 to channel 1. (2) Channel 2 to channel 1. Fig 40. Channel separation as a function of frequency with 1 W output power 001aaj197 30 Fig 41. Channel separation as a function of frequency with 10 W output power 001aaj198 100 η (%) PD (W) (1) 80 (2) 20 60 (2) 40 10 (1) 20 0 0 0 10 20 30 40 50 0 10 20 30 Po (W) (1) VP = 14.4 V; RL = 2 at 1 kHz. (1) VP = 14.4 V; RL = 2 at 1 kHz. (2) VP = 14.4 V; RL = 4 at 1 kHz. Fig 42. Power dissipation as a function of output power Product data sheet 50 Po (W) (2) VP = 14.4 V; RL = 4 at 1 kHz. TDF8599A 40 Fig 43. Efficiency as a function of total output power All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 40 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 001aaj199 40 001aaj200 100 η (%) PD (W) 80 30 60 20 40 10 20 0 0 0 30 60 90 120 150 Po (W) 0 VP = 35 V; RL = 4 . 30 60 90 120 150 Po (W) VP = 35 V; RL = 4 . Fig 44. Power dissipation as a function of total output power with both channels driven Fig 45. Efficiency as a function of output power of one channel with both channels driven 001aak079 −70 CMRR (dB) −74 −78 −82 −86 −90 10 102 103 104 105 f (Hz) VP = 14.4 V; Vi = 1 V RMS. Fig 46. CMRR as a function of frequency TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 41 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 14.7 Typical application schematics bead 100 μF 35 V bead bead VP 100 μF 35 V VP1 VP2 VPA PGND1 1000 μF 35 V GND PGND2 GNDD/HW 100 nF VDDD 220 nF LLC OUT1N OUT1N 100 nF CLC 15 nF 10 Ω 22 Ω 470 pF 470 pF 470 pF CLC 10 Ω OUT1P LLC OUT2P OUT2P 100 nF CLC 15 nF 10 Ω 22 Ω 470 pF 470 pF VP2 470 pF 470 pF CLC 100 nF OUT2N BOOT2P PGND2 PGND2 VP2 VP2 BOOT2N 10 Ω 15 nF LLC 33 2 3 4 32 5 31 6 IN1P CIN1P 470 nF IN1N CIN1N 470 nF CIN2P 470 nF IN2N CIN2N 470 nF IN2P ACGND EN 28 7 IN1P IN1N IN2P IN2N CACGND 100 nF enable(1) 8 9 TDF8599A 27 10 26 11 25 12 24 13 SEL_MUTE 220 nF OUT2N VSTAB2 DCP (3) OSCIO 23 14 22 15 21 16 20 17 19 18 mute/on(1) 470 nF SVRR 47 μF AGND VDDA 2.2 μF bead VPA non-I2C-bus mode ADS MOD 4.7 kΩ CLIP 10 kΩ DIAG 10 kΩ 100 nF PGND2 22 Ω 34 PGND1 30 PGND1 BOOT1P 29 15 nF LLC OUT1P VP1 35 1 100 nF PGND1 22 Ω BOOT1N VP1 470 pF VP1 100 nF VSTAB1 36 BD modulation setting VPull-up VPull-up SDA SCL SSM OSCSET 1 μF(2) 100 nF 39 kΩ MASTER MODE 001aak080 Dual BTL mode (stereo) in non-I2C-bus mode with DC offset protection disabled, Spread spectrum mode enabled BD modulation. (1) See Figure 3 on page 6 for a diagram of the connection for pins EN and SEL_MUTE. (2) See Section 8.3.2 on page 8 for detailed information. (3) See Section 8.5.5 on page 16 for detailed information on DC offset protection. Fig 47. Example application diagram: dual BTL in non-I2C-bus mode TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 42 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier bead 100 μF 35 V bead bead VP 100 μF 35 V VP1 VP2 VPA PGND1 1000 μF 35 V GND PGND2 GNDD/HW 100 nF VDDD 220 nF LLC OUT1N OUT1N 100 nF CLC 15 nF 10 Ω 22 Ω 470 pF 470 pF 470 pF 100 nF 10 Ω OUT1P LLC OUT2P OUT2P 100 nF CLC 15 nF 10 Ω 22 Ω 470 pF 470 pF VP2 470 pF 470 pF CLC 100 nF OUT2N BOOT2P PGND2 PGND2 VP2 VP2 BOOT2N 10 Ω 15 nF LLC 220 nF OUT2N VSTAB2 DCP (3) 2 34 3 33 4 32 5 31 6 7 8 28 9 TDF8599A 27 10 26 11 25 12 24 13 IN1P CIN1P 470 nF IN1N CIN1N 470 nF IN2P CIN2P 470 nF IN2N CIN2N 470 nF ACGND EN 4.7 μF OSCIO 23 14 22 15 21 16 20 17 19 18 IN1P IN1N IN2P IN2N CACGND 100 nF enable(1) SEL_MUTE(1) 470 nF SVRR 47 μF AGND VDDA 2.2 μF ADS bead RADS MOD ≤ 13 kΩ 100 nF PGND2 22 Ω 35 PGND1 30 PGND1 BOOT1P 29 15 nF LLC OUT1P VP1 1 100 nF PGND1 22 Ω BOOT1N VP1 470 pF VP1 CLC VSTAB1 36 CLIP 10 kΩ DIAG 10 kΩ VPA I2C-bus address select stereo mode setting VPull-up VPull-up SDA connect to μP SCL SSM OSCSET (2) 100 nF 39 kΩ MASTER MODE 001aak081 Dual BTL mode (stereo) in I2C-bus mode with DC offset protection enabled, Spread spectrum mode disabled. (1) See Figure 3 on page 6 for a diagram of the connection for pins EN and SEL_MUTE. (2) See Section 8.3.2 on page 8 for detailed information. (3) See Section 8.5.5 on page 16 for detailed information on DC offset protection. Fig 48. Example application diagram: dual BTL in I2C-bus mode TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 43 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier bead 100 μF 35 V bead bead VP 100 μF 35 V VP1 VP2 VPA PGND1 1000 μF 35 V GND PGND2 GNDD/HW 100 nF VDDD 220 nF LLC OUT1N 15 nF 10 Ω 470 pF 470 pF CLC 10 Ω 22 Ω VP1 OUT1P LLC 22 Ω 100 nF OUT2P BOOT2P CLC 470 pF OUTP 15 nF 10 Ω 470 pF VP2 PGND2 PGND2 100 nF PGND2 470 pF 470 pF VP2 VP2 BOOT2N 10 Ω 15 nF LLC 220 nF OUT2N VSTAB2 DCP (3) 35 2 34 3 33 4 32 5 31 6 PGND1 30 PGND1 BOOT1P 29 15 nF LLC 1 100 nF PGND1 470 pF 100 nF BOOT1N VP1 470 pF VP1 OUTN VSTAB1 36 4.7 μF OSCIO 7 8 28 9 TDF8599A 27 10 26 11 25 12 24 13 23 14 22 15 21 16 20 17 19 18 IN1P IN1N CINP CINN 470 nF INP 470 nF INN IN2P IN2N ACGND EN CACGND 100 nF enable(1) SEL_MUTE(1) 470 nF SVRR 47 μF AGND VDDA 2.2 μF ADS bead RADS MOD ≥ 33 kΩ CLIP 10 kΩ DIAG 10 kΩ VPA I2C-bus address select parallel mode setting VPull-up VPull-up SDA connect to μP SCL SSM OSCSET 100 nF 39 kΩ fixed frequency(2) MASTER MODE 001aak082 Single BTL mode (parallel) in I2C-bus mode with DC offset protection enabled, Spread spectrum mode disabled. (1) See Figure 3 on page 6 for a diagram of the connection for pins EN and SEL_MUTE. (2) See Section 8.3.2 on page 8 for detailed information. (3) See Section 8.5.5 on page 16 for detailed information on DC offset protection. Fig 49. Example application diagram: single BTL in I2C-bus mode TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 44 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier bead 100 μF 35 V bead 100 μF 35 V bead VP GND VP1 VP2 GNDD/HW VPA PGND1 1000 μF 35 V 100 nF PGND2 VDDD 220 nF LLC OUT1N OUT1N 100 nF CLC 15 nF 10 Ω 22 Ω 470 pF 470 pF 22 Ω 100 nF 10 Ω PGND1 PGND1 BOOT1P 15 nF LLC OUT1P VP1 OUT1P LLC OUT2P OUT2P 100 nF CLC 15 nF 10 Ω 22 Ω 470 pF 470 pF VP2 470 pF CLC 100 nF 470 pF 100 nF VP2 VP2 BOOT2N 10 Ω 15 nF LLC OUT2N BOOT2P PGND2 PGND2 PGND2 22 Ω OUT2N 220 nF VSTAB2 DCP DC offset protection enabled 1 35 2 34 3 33 4 32 5 31 6 30 7 29 8 100 nF PGND1 470 pF BOOT1N VP1 470 pF VP1 CLC VSTAB1 36 4.7 μF OSCIO (3) 28 9 TDF8599A 27 MASTER 10 26 11 25 12 24 13 23 14 22 15 21 16 20 17 19 18 IN1P CIN1P 470 nF IN1N CIN1N 470 nF IN2P CIN2P 470 nF IN2N CIN2N 470 nF GNDD/HW VDDD 220 nF LLC 470 pF 15 nF 470 pF 470 pF 10 Ω 22 Ω VP1 OUT1P LLC 22 Ω OUT2P 15 nF 10 Ω BOOT2P CLC 470 pF 470 pF VP2 PGND2 PGND2 100 nF PGND2 470 pF 470 pF VP2 VP2 BOOT2N 10 Ω 15 nF LLC 220 nF OUT2N VSTAB2 DCP DC offset protection enabled 1 35 2 34 3 33 4 32 5 31 6 PGND1 30 PGND1 BOOT1P 29 15 nF LLC 36 100 nF PGND1 CLC BOOT1N VP1 470 pF VP1 OUT3N VSTAB1 OUT1N 10 Ω OUT3P IN2P IN2N 100 nF EN(1) enable SEL_MUTE(1) 470 nF SVRR 47 μF AGND 2.2 μF VDDA ADS bead RADS MOD ≤ 13 kΩ CLIP 10 kΩ DIAG 10 kΩ VPA I2C-bus address select stereo mode setting VPull-up VPAPull-up SDA SCL 1 μF SSM OSCSET spread spectrum mode(2) 100 nF MASTER MODE 39 kΩ 100 nF 100 nF IN1N CACGND ACGND 20 kΩ 100 nF IN1P 4.7 μF (3) OSCIO 7 8 28 9 TDF8599A 27 SLAVE 10 26 25 11 12 24 13 23 14 22 15 21 16 20 17 19 18 IN1P CINP 470 nF IN1N CINN 470 nF IN3P IN3N IN2P IN2N CACGND ACGND 100 nF EN(1) SEL_MUTE(1) 470 nF SVRR 47 μF AGND 2.2 μF VDDA ADS bead RADS MOD ≥ 33 kΩ CLIP 10 kΩ DIAG 10 kΩ VPA I2C-bus address select parallel mode setting VPull-up VPull-up SDA connect to μP SCL 5.1 kΩ SSM OSCSET 270 nF 10 nF SLAVE MODE phase lock operation (4) 001aak083 I2C-bus mode: dual BTL in Master mode, one BTL in Slave mode; DC offset protection enabled. (1) See Figure 3 on page 6 for a diagram of the connection for pins EN and SEL_MUTE. (2) See Section 8.3.2 on page 8 for detailed information. (3) See Section 8.5.5 on page 16 for detailed information on disabling DC offset protection. (4) See Section 8.3.4 on page 10 for detailed information on PLL operation. Fig 50. Example application diagram: dual BTL master, single BTL slave in I2C-bus mode TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 45 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 15. Package outline HSOP36: plastic, heatsink small outline package; 36 leads; low stand-off height SOT851-2 D E A x c y X E2 v HE M A D1 D2 1 18 pin 1 index Q A A2 E1 (A 3) A4 θ Lp detail X 36 19 z w bp e M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) A UNIT max. A2 mm 3.5 A3 A4(1) +0.08 3.5 0.35 −0.04 3.2 D1 D2 E (2) E1 E2 e HE Lp Q 0.38 0.32 16.0 13.0 0.25 0.23 15.8 12.6 1.1 0.9 11.1 10.9 6.2 5.8 2.9 2.5 0.65 14.5 13.9 1.1 0.8 1.7 1.5 bp c D (2) v w x y 0.25 0.12 0.03 0.07 Z θ 2.55 2.20 8° 0° Notes 1. Limits per individual lead. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEITA SOT851-2 EUROPEAN PROJECTION ISSUE DATE 04-05-04 Fig 51. Package outline SOT851-2 (HSOP36) TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 46 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 16. Handling information In accordance with SNW-FQ-611-D. The number of the quality specification can be found in the Quality Reference Handbook. The handbook can be ordered using the code 9398 510 63011. 17. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 17.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 17.2 Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: • Through-hole components • Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are: • • • • • • Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering 17.3 Wave soldering Key characteristics in wave soldering are: TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 47 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier • Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave • Solder bath specifications, including temperature and impurities 17.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 52) than a SnPb process, thus reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 23 and 24 Table 23. SnPb eutectic process (from J-STD-020D) Package thickness (mm) Package reflow temperature (C) Volume (mm3) < 350 350 < 2.5 235 220 2.5 220 220 Table 24. Lead-free process (from J-STD-020D) Package thickness (mm) Package reflow temperature (C) Volume (mm3) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 52. TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 48 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier maximum peak temperature = MSL limit, damage level temperature minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 52. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 18. Abbreviations Table 25. TDF8599A Product data sheet Abbreviations Abbreviation Description BCDMOS Bipolar Complementary and double Diffused Metal-Oxide Semiconductor BTL Bridge-Tied Load DCP DC offset Protection DMOST double Diffused Metal-Oxide Semiconductor Transistor EMI ElectroMagnetic Interference I2C Inter-Integrated Circuit LSB Least Significant Bit Mp Master microprocessor MSB Most Significant Bit NDMOST N-type double Diffused Metal-Oxide Semiconductor Transistor OCP OverCurrent Protection OTP OverTemperature Protection OVP OverVoltage Protection PLL Phase-Locked Loop POR Power-On Reset PWM Pulse-Width Modulation SOI Silicon On Insulator All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 49 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier Table 25. Abbreviations …continued Abbreviation Description TFP Thermal Foldback Protection UVP UnderVoltage Protection WP Window Protection 19. Revision history Table 26. Revision history Document ID Release date Data sheet status Change notice Supersedes TDF8599A v.3 20130502 Product data sheet - TDF8599A v.2 - TDF8599A v.1 Modifications: TDF8599A v.2 Modifications: TDF8599A v.1 TDF8599A Product data sheet • Changed title Figure 45. 20090630 • • • • • • • • Product data sheet Data sheet status changed from Objective data sheet to Product data sheet. Various minor textual inconsistencies in the data sheet corrected. Changed Section 8.2: Figure 3 on page 6. Changed Section 8.2: Table 4 on page 7. Changed Section 8.2: Table 5 on page 7. Changed Section 8.6.3: Figure 20 on page 22. Changed Section 8.6.3: Figure 21 on page 23. Changed Section 14.7: Figure 47 on page 42, Figure 48 on page 43, Figure 49 on page 44 and Figure 50 on page 45. 20090602 Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 - © NXP B.V. 2013. All rights reserved. 50 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 20. Legal information 20.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 20.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 20.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. TDF8599A Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 51 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 20.4 Trademarks Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. I2C-bus — logo is a trademark of NXP B.V. 21. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 52 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 22. Tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Quick reference data . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . .2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . .4 I2C-bus mode operation . . . . . . . . . . . . . . . . . . .7 Non-I2C-bus mode operation . . . . . . . . . . . . . . .7 Mode setting pin OSCIO . . . . . . . . . . . . . . . . . .7 Oscillator modes . . . . . . . . . . . . . . . . . . . . . . .10 Operation mode selection with the MOD pin . . 11 Overview of protection types . . . . . . . . . . . . . .15 Overview of TDF8599A protection circuits and amplifier states . . . . . . . . . . . . . . . . . . . . . . . . .17 Available data on pins DIAG and CLIP . . . . . .18 Interpretation of DC load detection bits . . . . . .20 I2C-bus write address selection using pins MOD and ADS . . . . . . . . . . . . . . . . . . . . . . . . .23 Instruction byte descriptions . . . . . . . . . . . . . .25 Phase shift bit settings . . . . . . . . . . . . . . . . . . .25 Description of data bytes . . . . . . . . . . . . . . . . .26 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . .27 Thermal characteristics . . . . . . . . . . . . . . . . . .28 Static characteristics . . . . . . . . . . . . . . . . . . . .28 Switching characteristics . . . . . . . . . . . . . . . . .31 Dynamic characteristics . . . . . . . . . . . . . . . . . .32 Filter component values . . . . . . . . . . . . . . . . .36 SnPb eutectic process (from J-STD-020D) . . .48 Lead-free process (from J-STD-020D) . . . . . .48 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . .49 Revision history . . . . . . . . . . . . . . . . . . . . . . . .50 TDF8599A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 53 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 23. Figures Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6. Fig 7. Fig 8. Fig 9. Fig 10. Fig 11. Fig 12. Fig 13. Fig 14. Fig 15. Fig 16. Fig 17. Fig 18. Fig 19. Fig 20. Fig 21. Fig 22. Fig 23. Fig 24. Fig 25. Fig 26. Fig 27. Fig 28. Fig 29. Fig 30. Fig 31. Fig 32. Fig 33. Fig 34. Fig 35. Fig 36. Fig 37. Fig 38. Fig 39. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Heatsink up (top view) pin configuration TDF8599ATH . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Mode selection. . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Clock frequency as a function of Rosc . . . . . . . . . .8 Master and slave configuration . . . . . . . . . . . . . . .8 Spread spectrum mode . . . . . . . . . . . . . . . . . . . . .9 Spread spectrum operation in Master mode . . . . .9 Phase lock operation . . . . . . . . . . . . . . . . . . . . . .10 AD/BD modulation switching circuit . . . . . . . . . . .12 AD modulation . . . . . . . . . . . . . . . . . . . . . . . . . . .12 BD modulation . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Master and slave operation with 1⁄2 p phase shift 14 Parallel mode . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DC offset protection and diagnostic output . . . . .16 Diagnostic output for short circuit conditions . . . .18 DC load detection circuit . . . . . . . . . . . . . . . . . . .19 DC load detection procedure . . . . . . . . . . . . . . . .19 DC load detection limits . . . . . . . . . . . . . . . . . . . .19 Recommended start-up sequence with DC load detection enabled . . . . . . . . . . . . . . . . . . . . . . . .21 Start-up and shutdown timing in I2C-bus mode with DC load detection . . . . . . . . . . . . . . . . . . . . .22 Start-up and shutdown timing in non-I2C-bus mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 I2C-bus start and stop conditions. . . . . . . . . . . . .24 Data bits sent from Master microprocessor (Mmp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 I2C-bus write . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 I2C-bus read. . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Po as a function of VP in stereo mode with THD = 0.5 % . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 Po as a function of VP in stereo mode with THD = 10 % . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 Po as a function of VP in parallel mode with THD = 0.5 % . . . . . . . . . . . . . . . . . . . . . . . . . . . .35 Po as a function of VP parallel mode with THD = 10 % . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35 THD + N as a function of output power with a 2 load; VP = 14.4 V. . . . . . . . . . . . . . . . . . . . . .37 THD + N as a function of output power with a 4 load; VP = 14.4 V. . . . . . . . . . . . . . . . . . . . . .37 THD + N as a function of output power with a 2 load; VP = 35 V . . . . . . . . . . . . . . . . . . . . . . .38 THD + N as a function of output power with a 4 load; VP = 35 V . . . . . . . . . . . . . . . . . . . . . . .38 THD + N as a function of frequency with a 2 load, BD modulation; VP = 14.4 V . . . . . . . . . . . .38 THD + N as a function of frequency with a 4 load, BD modulation; VP = 14.4 V . . . . . . . . . . . .38 THD + N as a function of frequency with a 2 load, BD modulation; VP = 35 V. . . . . . . . . . . . . .39 Gain as a function of frequency . . . . . . . . . . . . . .39 Output power as a function of supply voltage with a 2 load . . . . . . . . . . . . . . . . . . . . . . . . . . .39 Output power as a function of supply voltage TDF8599A Product data sheet with a 4 load . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Fig 40. Channel separation as a function of frequency with 1 W output power. . . . . . . . . . . . . . . . . . . . . 40 Fig 41. Channel separation as a function of frequency with 10 W output power. . . . . . . . . . . . . . . . . . . . 40 Fig 42. Power dissipation as a function of output power . 40 Fig 43. Efficiency as a function of total output power . . . 40 Fig 44. Power dissipation as a function of total output power with both channels driven. . . . . . . . . . . . . 41 Fig 45. Efficiency as a function of output power of one channel with both channels driven . . . . . . . . . . . 41 Fig 46. CMRR as a function of frequency . . . . . . . . . . . . 41 Fig 47. Example application diagram: dual BTL in non-I2C-bus mode . . . . . . . . . . . . . . . . . . . . . . . . 42 Fig 48. Example application diagram: dual BTL in I2C-bus mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Fig 49. Example application diagram: single BTL in I2C-bus mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Fig 50. Example application diagram: dual BTL master, single BTL slave in I2C-bus mode . . . . . . . . . . . . 45 Fig 51. Package outline SOT851-2 (HSOP36) . . . . . . . . 46 Fig 52. Temperature profiles for large and small components. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 All information provided in this document is subject to legal disclaimers. Rev. 3 — 2 May 2013 © NXP B.V. 2013. All rights reserved. 54 of 55 TDF8599A NXP Semiconductors I2C-bus controlled dual channel class-D power amplifier 24. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.3.1 8.3.2 8.3.3 8.3.4 8.4 8.4.1 8.4.2 8.4.3 8.5 8.5.1 8.5.2 8.5.3 8.5.4 8.5.5 8.5.6 8.5.7 8.6 8.6.1 8.6.2 8.6.2.1 8.6.2.2 8.6.2.3 8.6.2.4 8.6.3 9 9.1 9.2 10 11 12 12.1 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Mode selection . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pulse-width modulation frequency . . . . . . . . . . 7 Master and slave mode selection . . . . . . . . . . . 7 Spread spectrum mode (Master mode) . . . . . . 8 Frequency hopping (Master mode). . . . . . . . . . 9 Phase lock operation (Slave mode) . . . . . . . . 10 Operation mode selection. . . . . . . . . . . . . . . . 11 Modulation mode . . . . . . . . . . . . . . . . . . . . . . 11 Phase staggering (Slave mode) . . . . . . . . . . . 13 Parallel mode . . . . . . . . . . . . . . . . . . . . . . . . . 14 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Thermal foldback . . . . . . . . . . . . . . . . . . . . . . 15 Overtemperature protection . . . . . . . . . . . . . . 15 Overcurrent protection . . . . . . . . . . . . . . . . . . 15 Window protection . . . . . . . . . . . . . . . . . . . . . 15 DC offset protection . . . . . . . . . . . . . . . . . . . . 16 Supply voltages . . . . . . . . . . . . . . . . . . . . . . . 17 Overview of protection circuits and amplifier states . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Diagnostic output . . . . . . . . . . . . . . . . . . . . . . 17 Diagnostic table . . . . . . . . . . . . . . . . . . . . . . . 17 Load identification (I2C-bus mode only) . . . . . 18 DC load detection . . . . . . . . . . . . . . . . . . . . . . 18 Recommended start-up sequence with DC load detection enabled . . . . . . . . . . . . . . . . . . 20 AC load detection . . . . . . . . . . . . . . . . . . . . . . 21 CLIP detection . . . . . . . . . . . . . . . . . . . . . . . . 21 Start-up and shutdown sequence . . . . . . . . . . 22 I2C-bus specification . . . . . . . . . . . . . . . . . . . . 23 Instruction bytes . . . . . . . . . . . . . . . . . . . . . . . 25 Data bytes. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 27 Thermal characteristics . . . . . . . . . . . . . . . . . 28 Static characteristics. . . . . . . . . . . . . . . . . . . . 28 Switching characteristics . . . . . . . . . . . . . . . . 31 13 14 14.1 14.2 14.3 14.4 14.5 14.6 14.7 15 16 17 17.1 17.2 17.3 17.4 18 19 20 20.1 20.2 20.3 20.4 21 22 23 24 Dynamic characteristics. . . . . . . . . . . . . . . . . Application information . . . . . . . . . . . . . . . . . Output power estimation (Stereo mode) . . . . Output power estimation (Parallel mode). . . . Output current limiting . . . . . . . . . . . . . . . . . . Speaker configuration and impedance. . . . . . Heat sink requirements . . . . . . . . . . . . . . . . . Curves measured in reference design . . . . . . Typical application schematics. . . . . . . . . . . . Package outline. . . . . . . . . . . . . . . . . . . . . . . . Handling information . . . . . . . . . . . . . . . . . . . Soldering of SMD packages . . . . . . . . . . . . . . Introduction to soldering. . . . . . . . . . . . . . . . . Wave and reflow soldering. . . . . . . . . . . . . . . Wave soldering . . . . . . . . . . . . . . . . . . . . . . . Reflow soldering . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . Legal information . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 33 33 34 35 36 36 37 42 46 47 47 47 47 47 48 49 50 51 51 51 51 52 52 53 54 55 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 May 2013 Document identifier: TDF8599A