ANPEC APW7057KC-TU

APW7057
High Power Step-Down Synchronous DC/DC Controller
Features
General Description
• Operates from +5V Input
• 0.8V Internal Reference Voltage
The APW7057 is a 300kHz constant frequency voltage mode synchronous switching controller that drives
external N-channel MOSFETs. When the input supply drops close to output, the upper MOSFET remains
on, achieving 100% duty cycle. Internal loop compensation is optimized for fast transient response, eliminating external compensation network. The precision
0.8V reference makes this part suitable for a wide variety of low voltage applications. Soft start is internally
set to 2ms, limiting the input in-rush current and preventing the output from overshoot during powering up.
The APW7057 has over current and short circuit
protections. Over current protection is achieved by
monitoring the voltage drop across the high side
MOSFET, eliminating the need for a current sensing resistor and short circuit condition is detected
through the FB pin. If either fault conditions occur,
the APW7057 would initiate the soft start cycle. After
three cycles and if the fault condition persists, the
controller will be shut down. To restart the controller,
either recycle the VCC supply or momentarily pull the
OSCSET pin below 1.25V.
- ±1.5% Accuracy Over Line, Load and Temp.
• 0.8V to VCC Output Range
• Full Duty Cycle Range
- 0% to 100%
• Internal Loop Compensation
• Internal Soft Start
- Typical 2ms
• Programmable Over-Current Protection
- Lossless Sensing Using MOSFET RDS (ON)
•
•
•
•
Under-Voltage Protection
Drives External N-Channel MOSFETs
Shutdown Control
Small SOP-8 Package
Applications
•
•
•
•
•
•
•
The APW7057 can be shutdown by pulling the OCSET
Motherboard
pin below 1.25V. In shutdown, both gate drive signals
will be low. The controller is available in a small SOP8 package.
Graphics Cards
Cable or DSL Modems, Set Top Boxes
DSP Supplies
Memory Supplies
Pinouts
5V Input DC-DC Regulators
Distributed Power Supplies
BOOT
1
8
PHASE
UGATE
2
7
OCSET
GND
3
6
FB
LGATE
4
5
VCC
SOP-8 (Top View )
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
1
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APW7057
Ordering and Marking Information
Package Code
APW 7057
K : SOP-8
Operating Junction Tem p. Range
C : 0 to 70 °C
Handling Code
Handling Code
Tem p. Range
TU : Tube
Package Code
TR : Tape & Reel
APW 7057
XXXXX
APW 7057 K :
XXXXX - Date Code
Block Diagram
VCC
BOOT
Shutdown
UnderVoltage
Lockout
OCSET
IOCSET
40uA
OC
Com parator
UVLO
Soft-Start
and Fault
Logic
0.5V
OCP
PHASE
UVP
UGATE
Soft-Start
Inhibit
Gate
PW M
-
FB
+
VR E F
Control
COMP
VCC
+
Error
Am plifier
-
LGATE
0.8V
Oscillator
FO S C
GND
300kHz
. E C K H / Figure 1.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
2
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APW7057
Typical Application
R3
2.2
C3
1uF
5
C7
470pF
R4
8.2k
+
+5V
C2
1000uF x2
1
BOOT
OCSET
Q3
C1
1uF
D1
1N4148
VCC
7
VIN
2
U G ATE
C4
0.1uF
Q1
L1
3.3uH
8
Shutdown
P H AS E
6
+
U1
APW 7057
LG ATE
FB
4
Q2
VO UT
+2.5V/10A
C5
1000uF x2
GND
R1
5.1k
3
R2
2.4k
C6
0.1uF
Q1: APM2014N UC
Q2: APM2014N UC
Q3: APM2300A AC
C2: 1000uF/10V, ESR = 25m Ω
C5: 1000uF/6.3V, ESR = 25m Ω
.ECKH/Figure 2.
Absolute Maximum Ratings
Symbol
V CC
V BOOT
Parameter
Rating
Unit
-0.3 ~ 7
V
BOOT Supply Voltage (BOOT to GND)
-0.3 ~ 15
V
PHASE, OCSET to GND Input Voltage
-0.3 ~ 12
V
VCC Supply Voltage (VCC to GND)
FB to GND Input Voltage
-0.3 ~ V CC +0.3
Maxim um Junction Tem perature
T STG
Storage Tem perature
T SDR
Maxim um Soldering Tem perature, 10 Seconds
V ESD
Minim um ESD Rating
V
125
o
C
-65 ~ 150
o
C
300
o
C
±2
kV
Value
Unit
Thermal Characteristics
Symbol
θJA
Parameter
Junction-to-Ambient Resistance in free air (SOP-8)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
3
160
o
C/W
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APW7057
Recommended Operating Conditions
Symbol
Parameter
Range
Unit
5 ± 5%
V
V
V CC
VCC Supply Voltage
V OUT
Output Voltage of the Switching Regulator (Note)
0.8 ~ V CC
Input Voltage of the Switching Regulator (Note)
3.3 ~ V CC
V IN
TA
TJ
Ambient Temperature
Junction Temperature
V
0 ~ 70
o
C
0 ~ 125
o
C
Note : Refer to the typical application circuit
Electrical Characteristics
Unless otherwise specified, these specifications apply over VCC=5V, VBOOT=12V and TA= 0~70 oC. Typical
values are at TA=25oC.
Symbol
Parameter
Test Conditions
APW7057
Min
Typ
Max
Unit
SUPPLY CURRENT
IVCC
VCC Nominal Supply
Current
UGATE and LGATE Open
2.1
mA
IBOOT
BOOT Nominal Supply
Current
UGATE Open
2.1
mA
Under Voltage Lockout(UVLO)
Rising VCC Threshold
4.0
4.2
4.4
V
Falling VCC Threshold
3.8
4.0
4.2
V
250
300
340
kHz
OSCILLATOR
FOSC
∆V OSC
Free Running Frequency
Ramp Upper Threshold
2.85
V
Ramp Lower Threshold
0.95
V
1.9
VP-P
0.8
V
Ramp Amplitude
REFERENCE VOLTAGE
VREF
Reference Voltage
Reference Voltage
Accuracy
-1.5
+1.5
%
ERROR AMPLIFIER
DC Gain
75
dB
FP
First Pole Frequency
10
Hz
FZ
First Zero Frequency
1
kHz
UGATE Duty Range
0
FB Input Current
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
4
100
%
0.1
µA
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APW7057
Electrical Characteristics (Cont.)
Unless otherwise specified, these specifications apply over VCC=5V, VBOOT=12V and TA= 0~70 oC. Typical
values are at TA=25oC.
Symbol
Parameter
Test Conditions
APW7057
Min
Typ
Max
Unit
PWM CONTROLLER GATE DRIVERS
TD
UGATE Source
VUAGTE=1V
0.6
A
UGATE Sink
VUGATE=1V
7.3
Ω
LGATE Source
VLGATE=1V
0.6
A
LGATE Sink
VLGATE=1V
1.8
Ω
50
nS
Dead Time
PROTECTION
IOCSET
OCSET Sink Current
VOCSET=4.5V
UVFB
FB Under-Voltage Level
FB falling
34
FB Under-Voltage
Hysteresis
40
46
µA
0.5
V
15
mV
2
mS
1.25
V
20
mV
SOFT-START AND SHUTDOWN
TSS
Soft-Start Interval
Shutdown Threshold
VOCSET Falling
OCSET Shutdown
Hysteresis
Functional Pin Description
BOOT (Pin 1)
This pin provides the supply voltage to the high side
MOSFET driver. A voltage no greater than 13V can
be connected to this pin as a supply to the driver.
For driving logic level N-channel MOSEFT, a bootstrap circuit can be use to create a suitable driver’s
supply.
LGATE (Pin 4)
This pin provides the gate drive signal for the low
side MOSFET.
VCC (Pin 5)
This is the main bias supply for the controller and
its low side MOSFET driver. Must be closely
UGATE (Pin 2)
This pin provides gate drive for the high-side
MOSFET.
decoupled to GND (Pin 3). DO NOT apply a
voltage greater than 5.5V to this pin.
GND (Pin 3)
Signal and power ground for the IC. All voltage levels are measured with respect to this pin. Tie this
pin to the ground plane through the lowest impedance connection available.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
FB (Pin 6)
This pin is the inverting input of the error amplifier
and it receives the feedback voltage from an exter-
5
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APW7057
Functional Pin Description
nal resistive divider across the output (VOUT). The
the over current limit. An internally generated 40uA
output voltage is determined by:
current source will flow through this resistor, creating a voltage drop. This voltage will be compared
VOUT = 0.8V(1+
ROUT
)
RGND
with the voltage across the high side MOSFET. The
threshold of the over current limit is therefore given
where ROUT is the resistor connected between VOUT
and FB while RGND is the resistor connected from FB
to GND.
by:
IOI =
40uA x ROCSET
RDS(ON)
OCSET (Pin 7)
An over current condition will cycle the soft start
This pin serves two functions: as a shutdown con-
function. After three consecutive cycles and if the
trol and for setting the over current limit threshold.
fault condition persists, the controller will be shut
Pulling this pin below 1.25V shuts the controller
down. To restart the controller, either recycle the VCC
down, forcing the UGATE and LGATE signals to be
supply or momentarily pull the OSCSET pin below
at 0V. A soft start cycle will be initiated upon the re-
1.25V.
lease of this pin.
A resistor (Rocset) connected between this pin and
PHASE (Pin 8)
This pin is connected to the source of the high-side
MOSFET and is used to monitor the voltage drop
across the high-side MOSFET for over-current
protection.
the drain of the high side MOSFET will determine
Typical Characteristics
Switching Frequency vs. Junction Temperature
Reference Voltage vs. Junction Temperature
350
Switching Frequency, FOSC (kHz)
Reference Voltage, VREF (V)
0.812
0.808
0.804
0.800
0.796
0.792
0.788
-50
-25
0
25
50
75
100
125
330
320
310
300
290
280
270
260
250
-50
150
-25
0
25
50
75
100
125
150
Junction Temperature (°C)
Junction Temperature (oC)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
340
6
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APW7057
Typical Characteristics (Cont.)
OCSET Current vs. Junction Temperature
OCSET Current , IOCSET (µA)
46
45
44
43
42
41
40
39
38
37
36
35
34
-50
-25
0
25
50
75
100
125
150
Junction Temperature (oC)
Operating Waveforms
(Refer to the typical application circuit)
1. Load Transient Response : IOUT = 0A -> 10A -> 0A
- IOUT slew rate = Ó 10A/µS
IOUT = 0A -> 10A
IOUT = 0A -> 10A -> 0A
IOUT = 10A -> 0A
VOUT
VOUT
VOUT
VUGATE
VUGATE
10A
IOUT
Ch1 : VOUT, 100mV/Div, DC,
Offset = 2.50V
Ch2 : VUGATE, 10V/Div, DC
Ax1 : IOUT, 5A/Div
Time : 10µS/Div
BW = 20MHz
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
IOUT
IOUT
0A
Ch1 : VOUT, 100mV/Div, DC,
Offset = 2.50V
Ax1 : IOUT, 5A/Div
Time : 100µS/Div
BW = 20MHz
7
Ch1 : VOUT, 100mV/Div, DC,
Offset = 2.50V
Ch2 : VUGATE, 10V/Div, DC
Ax1 : IOUT, 5A/Div
Time : 10µS/Div
BW = 20MHz
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APW7057
Operating Waveforms
(Refer to the typical application circuit)
2. UGATE and LGATE
UGATE Rising
UGATE Falling
IOUT=10A
IOUT=10A
VUGATE
VUGATE
VLGATE
VLGATE
Ch1 : VUGATE, 2V/Div, DC
Time : 125nS/Div
Ch2 : VLGATE, 2V/Div, DC
BW = 500MHz
Ch1 : VUGATE, 2V/Div, DC
Time : 125nS/Div
Ch2 : VLGATE, 2V/Div, DC
BW = 500MHz
3. Powering ON / OFF
Soft-start at Powering ON
Ch1 : VIN, 2V/Div, DC
Time : 1mS/Div
Powering OFF
VIN
VIN
VOUT
VOUT
Ch1 : VIN, 2V/Div, DC
Time : 5mS/Div
Ch2 : VOUT, 1V/Div, DC
BW = 20MHz
Ch2 : VOUT, 1V/Div, DC
BW = 20MHz
4. Short-Circuit Protection
Under-Voltage (UVP)
and Over-Current Protection (OCP)
UVP
OCP
OCP
VOUT
Ch1 : VOUT, 1V/Div, DC
Ax1 : IOUT, 10A/Div
Time : 1mS/Div
BW = 20MHz
IOUT
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
8
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APW7057
Application Information
Component Selection Guidelines
∆VOUT = IRIPPLE x ESR
Output Capacitor Selection
The selection of COUT is determined by the required
effective series resistance (ESR) and voltage rating
rather than the actual capacitance requirement. Therefore select high performance low ESR capacitors that
are intended for switching regulator applications. In
some applications, multiple capacitors have to be
paralled to achieve the desired ESR value. If tantalum
capacitors are used, make sure they are surge tested
by the manufactures. If in doubt, consult the capacitors manufacturer.
where Fs is the switching frequency of the regulator.
There is a tradeoff exists between the inductor’s ripple
current and the regulator load transient response time
A smaller inductor will give the regulator a faster load
transient response at the expense of higher ripple current and vice versa. The maximum ripple current occurs at the maximum input voltage. A good starting
point is to choose the ripple current to be approximately 30% of the maximum output current.
Once the inductance value has been chosen, select
an inductor that is capable of carrying the required
peak current without going into saturation. In some
type of inductors, especially core that is make of
ferrite, the ripple current will increase abruptly when it
saturates. This will result in a larger output ripple
voltage.
Input Capacitor Selection
The input capacitor is chosen based on the voltage
rating and the RMS current rating. For reliable
operation, select the capacitor voltage rating to be at
least 1.3 times higher than the maximum input voltage.
The maximum RMS current rating requirement is approximately IOUT/2 , where IOUT is the load current.
.
During power up, the input capacitors have to handle
large amount of surge current. If tantalum capacitors
are used, make sure they are surge tested by the
manufactures. If in doubt, consult the capacitors
manufacturer.
For high frequency decoupling, a ceramic capacitor
between 0.1uF to 1uF can be connected between VCC
and ground pin.
MOSFET Selection
The selection of the N-channel power MOSFETs are
determined by the RDS(ON), reverse transfer capacitance
(CRSS) and maximum output current requirement.The
losses in the MOSFETs have two components: conduction loss and transition loss. For the upper and
lower MOSFET, the losses are approximately given
by the following :
Inductor Selection
The inductance of the inductor is determined by the
output voltage requirement. The larger the inductance,
the lower the inductor’s current ripple. This will translate into lower output ripple voltage. The ripple current
and ripple voltage can be approximated by:
PUPPER = Iout (1+ TC)(RDS(ON))D + (0.5)(Iout)(VIN)(tsw)FS
IRIPPLE =
VIN - VOUT
Fs x L
V
x OUT
VIN
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
2
2
PLOWER = Iout (1+ TC)(RDS(ON))(1-D)
where IOUT is the load current
TC is the temperature dependency of RDS(ON)
FS is the switching frequency
tsw is the switching interval
D is the duty cycle
E
9
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APW7057
Application Information
single point grounding. Figure 4 illustrates the layout,
with bold lines indicating high current paths. Components along the bold lines should be placed close
together. Below is a checklist for your layout:
Note that both MOSFETs have conduction losses while
the upper MOSFET include an additional transition
loss.The switching internal, tsw, is a function of the
reverse transfer capacitance CRSS. Figure 3 illustrates
the switching waveform internal of the MOSFET.
The (1+TC) term is to factor in the temperature dependency of the RDS(ON) and can be extracted from the
“RDS(ON) vs Temperature” curve of the power MOSFET.
• Keep the switching nodes (UGATE, LGATE and
PHASE) away from sensitive small signal nodes
since these nodes are fast moving signals. There
fore keep traces to these nodes as short as
possible.
• Decoupling capacitor CIN provides the bulk capaci
Layout Considerations
In high power switching regulator, a correct layout is
important to ensure proper operation of the regulator.
In general, interconnecting impedances should be minimized by using short, wide printed circuit traces. Signal and power grounds are to be kept separate and
finally combined using ground plane construction or
tance and needs to be placed close to the IC since
it will provide the MOSFET drivers transient current
requirement.
• The ground return of CIN must return to the combine
COUT (-) terminal.
• Capacitor CBOOT should be connected as close to
the BOOT and PHASE pins as possible.
V DS
Voltage across
drain and source of MO SFET
C HF
VCC
BOOT
LGATE
5
1
PHASE 8
+
Q1
C OUT
Q2
+
L1
Tim e
VOUT
Figure 4. Recommended Layout Diagram
Figure 3. Switching waveform across MOSFET
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
CIN
4
APW7057
U
2
1UGATE
t sw
VIN
10
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APW7057
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
1
L
0.004max.
Dim
A
Mi ll im et er s
Inche s
A
Min .
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
1. 27B S C
0. 50B S C
8°
8°
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
11
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APW7057
Physical Specifications
Terminal Material
Lead Solderability
Packaging
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
2500 devices per reel
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Average ramp-up rate(183 °C to Peak)
Preheat temperature 125 ± 25 °C)
Temperature maintained above 183 °C
Time within 5 °C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25 °C to peak temperature
Convection or IR/
Convection
3 °C/second max.
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds
220 +5/-0 °C or 235 +5/-0 °C
6 °C /second max.
6 minutes max.
VPR
10 °C /second max.
60 seconds
215~ 219 °C or 235 +5/-0 °C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bags
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
12
pkg. thickness < 2.5mm and pkg.
volume <
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APW7057
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
ESD
Latch-Up
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
MIL-STD-883D-3015.7
JESD 78
Description
245°C , 5 SEC
1000 Hrs Bias @ 125 °C
168 Hrs, 100 % RH , 121°C
-65°C ~ 150°C, 200 Cycles
VHBM > 2KV, VMM > 200V
10ms , Itr > 100mA
Carrier Tape & Reel Dimension
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
A
330±1
SOP-8
F
5.5 ± 0.1
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
D
D1
Po
1.55±0.1 1.55+ 0.25 4.0 ± 0.1
T1
12.4 +0.2
T2
2± 0.2
W
12 + 0.3
- 0.1
P1
2.0 ± 0.1
Ao
6.4 ± 0.1
Bo
5.2± 0.1
P
8± 0.1
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
13
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APW7057
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Oct., 2003
14
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