Embedded ACPI Compliant DDR Power Generation Using the ISL6537 and ISL6506 ® Application Note July 17, 2006 AN1123.0 Author: Douglas Mattingly Introduction Recommended Test Equipment The ISL6537, in conjunction with the ISL6506, provides a complete ACPI compliant power solution for computer systems with either dual channel DDRI or DDRII Memory systems. The chipset offered by Intersil provides the necessary control, protection and proper ACPI sequencing of the following rails: the 5V dual rail (5VDUAL), the 3.3V rail (3.3VDUAL), the DDR memory bias voltage (VDDQ_DDR), the DDR memory termination voltage (VTT_DDR), the DDR memory reference voltage (VREF_DDR), the Graphic and Memory Controller Hub (GMCH) bias voltage (VGMCH), and the GMCH and CPU termination voltage (VTT_GMCH/CPU). To test the full functionality of the ISL6537 and ISL6506, the following equipment is recommended: The ISL6537 consists of a synchronous buck controller to supply VDDQ_DDR with high current during S0/S1 (Run) states and standby current during S3 state (Suspend-To-RAM=STR). During Run mode, a fully integrated sink-source regulator generates an accurate and high current termination voltage. A buffered version of this voltage is provided as VREF_DDR. The ISL6537 also features a dual stage LDO controller to regulate VGMCH and a single stage LDO controller to regulate VTT_GMCH/CPU. A more complete description of the ISL6537 can be found in the datasheet[1]. • An ATX power supply (minimum 160W configuration) • Multiple electronic loads • Four channel oscilloscope with probes • Precision digital multimeters As there are seven regulated rails, it is difficult to exercise and monitor all of them at the same time. The user may wish to employ discrete resistive loads in addition to electronic loads. Electronic loads are favored because they allow the user to apply a multitude of varying load levels and load transients which allow for a broader analysis. Circuit Setup SET SWITCHES Ensure that the S3 switch is in the ACTIVE position and the S5 switch is in the S5 position. With the switches in these positions, the board will be forced into an S5 sleep state at initial power up. The ISL6506 controls the 5VDUALs and 3.3VDUAL rails. There are three versions of the ISL6506. The version required will depend on whether 5VDUAL is to be active during S4/S5. A more complete description of the ISL6506 can be found in the datasheet[2]. CONNECT THE ATX SUPPLY Quick Start Evaluation CONNECT LOADS The ISL6537_6506EVAL1 board is shipped ‘ready to use’ right from the box. The ISL6537_6506EVAL1 supports testing with an ATX power supply. All seven outputs can be exercised through external loads. Both the VDDQ and VTT regulators have the ability to source or sink current while all other outputs may only source current. There are posts available on each regulated output rail for attaching a load and/or monitoring the voltages. Eighteen individually labeled probe points are also available for use. These probe points provide Kelvin connections to signals which may be of interest to the user. Two switches have been placed on the board to accommodate ACPI signal simulation. These two switches generate the SLP_S3 and SLP_S5 signals that are sent to the ISL6506, ISL6537 and turn off the ATX supply. 1 Plug the 20-pin connector from the ATX power supply into the 20 pin receptacle, J1, on the evaluation board. Should the ATX power supply have a master AC switch, turn this switch to the OFF position prior to applying AC voltage. Figure 1 details the locations of the available power, ground, and signal connection points on the ISL6537_6506EVAL1 evaluation board The maximum loads specified for each rail below are absolute. All of the regulated rails are cascaded from the VDDQ_DDR rail, which itself is cascaded from the 5VDUAL rail (refer to “ISL6537_6506EVAL1 Schematic” on page 9). Any loading of a cascaded rail will itself be a load on the rail that is providing input and must be accounted for prior to application of loads. Loading VDDQ_DDR - Sourcing Current: Connect the positive terminal of an electronic load to the VDDQ post. Connect the return terminal of the same load to the corresponding GND post. The maximum load current that the rail will support prior to entering an over-current condition is 15A. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2006. All Rights Reserved All other trademarks mentioned are the property of their respective owners. Application Note 1123 Loading VDDQ_DDR - Sinking Current: Typically, the VDDQ rail does not sink current, however, the ISL6537 has the ability to allow the VDDQ rail to do just that. To test the VDDQ rail while sinking current, connect the positive terminal of an electronic load to the 5VDUAL post. Connect the return terminal of the same load to the VDDQ post. The maximum load current that the rail will support prior to entering an over-current condition is 15A. CAUTION: The return terminal of the load must float for this to work properly. ISL6537_6506EVAL1 ATX CONNECTOR (5VDUAL) Loading VTT_GMCH/CPU: Connect the positive terminal an electronic load to the VTT_GMCH/CPU post. Connect the return terminal of the corresponding GND post. The maximum load supported by this rail is 5A. Loading 5VDUAL: Connect the positive terminal of an electronic load to the 5VDUAL post. Connect the return terminal of the corresponding GND post. The maximum load supported by this rail is 14A. Loading 3VDUAL: Connect the positive terminal of an electronic load to the 3VDUAL post. Connect the return terminal of the corresponding GND post. The maximum load supported by this rail is 14A. Operation (VDDQ) ISL6506 (3VDUAL) ISL6537 (DDR_VTT) S3 S5 (SWITCHES) SLP_S5# VCC3 VCC5 5VDUAL 5VSBY SLP_S3# 12V 3VDUAL UGATE LGATE VREF_OUT (VGMCH) PWR_OK VREF_IN VID_PG (VTT_GMCH/CPU) KEY - GROUND TERMINAL FOR LOAD AND/OR PROBE GROUND - OUTPUT RAIL TERMINAL FOR LOAD AND/OR PROBE - PROBE POINT FIGURE 1. ISL6537_6506EVAL1 BOARD POWER AND SIGNAL CONNECTIONS Loading VTT_DDR - Sourcing Current: To test VTT_DDR while the regulator sources current, connect the positive terminal of an electronic load to the DDR_ VTT post. Connect the return terminal of the same load to the corresponding GND post. The maximum continuous current that the rail will support is 2A. Transient loads to 3A are also supported. Loading VTT_DDR - Sinking Current: To test VTT_DDR while the regulator sinks current, connect the positive terminal of an electronic load to the VDDQ post. Connect the return terminal of the same load to the DDR_VTT post. The maximum continuous current that the rail will support is 2A. Transient loads to 3A are also supported. CAUTION: The return terminal of the load must float for this to work properly. APPLY POWER TO THE BOARD Plug the ATX supply into the mains. If the supply has an AC switch, turn it on. With the S3 and S5 switches in the ACTIVE and S5 positions, respectively, the board will be in the S5 sleep state. Voltages present on the board will be 5VSBY which is supplied by the ATX and 3VDUAL which is controlled by the ISL6506. To enable the circuit, toggle the S5 switch to ACTIVE. This will place the board in the S0 state. All outputs should be brought up. EXAMINE START-UP WAVEFORMS AND OUTPUT QUALITY UNDER VARYING LOADS Start up is immediate following the transition to the S0 state. Using an oscilloscope or other laboratory equipment, the ramp-up and/or regulation of the outputs can be studied. Loading of the output can be accomplished through the use of an electronic load. Other methods, such as the use of discrete power resistors will work for loading as well. Reference Design General The ISL6537_6506EVAL1 is an evaluation board that highlights the operation of the ISL6537 and ISL6506 in an embedded ACPI and DDR DRAM Memory Power application. The VDDQ_DDR supply has been designed to supply 1.8V at a maximum load of 15A. The VTT_DDR termination supply will track the VDDQ_DDR supply at 50% while sourcing or sinking current. The dual stage LDO is designed to supply up to 10A of current at 1.5V for VGMCH while the single stage LDO supplies 1.2V at up to 5A for VTT_GMCH/CPU. Refer to “ISL6537_6506EVAL1 Schematic” on page 9, “ISL6537_6506EVAL1 Bill of Material” on page 10 and “ISL6537_6506EVAL1 Layout” on page 11. Loading VGMCH: Connect the positive terminal of an electronic load to the VGMCH post. Connect the return terminal of the corresponding GND post. The maximum load supported by this rail is 10A. 2 AN1123.0 July 17, 2006 Application Note 1123 Power Up and State Transitions ACTIVE position. Figure 3 shows this transition. There are several distinct state transitions that the ISL6537 and ISL6506 support. These include a Cold/Mechanical Start (S5 to S0 state transition), Active to Sleep (S0 to S3 transition), Sleep to Active (S3 to S0 transition) and finally Active to Shutdown (S0 to S5 transition). Table 1 shows the switch positions and the corresponding ACPI states. VS3 10V/DIV VS5 10V/DIV VVCC12 2V/DIV VVCC5 V5VDUAL TABLE 1. ISL6537_6506EVAL1 STATES S3 Switch S5 Switch SLEEP STATE ATX STATE ACTIVE ACTIVE S0 (Active) ON S3 ACTIVE S3 Standby ACTIVE S5 S5 Standby S3 S5 S5 Standby If both the S3 and S5 switches are toggled simultaneously, the board will default to an S5 state. If the board is in either sleep state, the ATX supply is put into standby mode, where only the 5VSBY rail is active. Initial Power Up - Cold Start If both the S3 and S5 switches are toggled to the ACTIVE position prior to applying AC power to the ATX supply, the board will immediately enter into S0 state when the 5VSBY rail comes up after the AC power is applied to the ATX. Figure 2 shows a Cold Start-up sequence. VDDQ_DDR VGMCH V3VDUAL VTT_GMCH/CPU VTT_DDR VVIDPGD 5V/DIV TIMEBASE: 20ms/DIV ALL SIGNALS AT 1V/DIV UNLESS OTHERWISE STATED FIGURE 3. S5 TO S0 STATE TRANSITION Note that the 3VDUAL rail is already active prior to the other rails soft-starting. If the ISL6506A had been used, the 5VDUAL rail would have been active in the S5 state as well. Due to bulk capacitance, the voltage on the 5VDUAL rail may not experience a significant discharge if the board is placed into an S5 sleep state unless a load is applied. S0 to S3 Sleep State Transition VS5 5V/DIV VS3 5V/DIV VVCC5 VVCC12 2V/DIV V5VDUAL V5SBY V3VDUAL Figure 4 shows the transition from the S0 state to the S3 sleep state. To achieve this transition, switch S3 is toggled to the S3 position. When transitioning from the S0 state to the S3 sleep state, it is important that the load on the VDDQ_DDR rail be reduced to sleep state levels that the 5VDUAL rail is capable of supporting. If the load on VDDQ_DDR is excessive, VDDQ_DDR voltage will collapse. VDDQ_DDR VGMCH VS3 5V/DIV VTT_GMCH/CPU VTT_DDR VVIDPGD 5V/DIV VDDQ_DDR VGMCH TIMEBASE: 10ms/DIV ALL SIGNALS AT 1V/DIV UNLESS OTHERWISE STATED VTT_GMCH/CPU VTT_DDR FIGURE 2. COLD/MECHANICAL START S5 Sleep State to S0 State Transition If the S5 switch is toggled to the S5 position prior to application of AC power to the ATX supply, then the board will immediately enter into the S5 sleep state when the 5VSBY rail comes up after the AC voltage is applied to the ATX. The ISL6506 will bring up the 3VDUAL rail but all other output rails will be inactive. The transition from the S5 state to the S0 state will occur when the S5 switch is toggled to the 3 VVIDPGD 5V/DIV TIMEBASE: 100ms/DIV ALL SIGNALS AT 500mV/DIV UNLESS OTHERWISE STATED FIGURE 4. S0 TO S3 STATE TRANSITION AN1123.0 July 17, 2006 Application Note 1123 S3 to S0 State Transition Figure 5 shows the transition from the S3 sleep state to the S0 state. This transition is accomplished by returning the S3 switch to the ACTIVE position. Once the PGOOD signal has been asserted, the VDDQ_DDR rail can then be loaded beyond the S3 load limitations of 5VDUAL. VS3 5V/DIV VDDQ_DDR VGMCH VTT_GMCH/CPU VTT_DDR VVIDPGD 5V/DIV TIMEBASE: 20ms/DIV ALL SIGNALS AT 500m V/DIV UNLESS OTHERWISE STATED FIGURE 5. S3 TO S0 STATE TRANSITION At time T1, either the SLP_S3# or SLP_S5# signal transitions HIGH, which is the signal to the system to enter into the S0 state. At time T2, 10ns later, PS_ON#, the signal that commands the ATX supply to turn on, is forced LOW. At time T3, the ATX rails have risen to 95% of their targeted nominal levels. The time between T2 and T3 can be between 100ms and 500ms. At time T4, the PWR_OK signal from the ATX supply starts to rise. The time between T3 and T4 will also fall between 100ms and 500ms. At time T5, the ATX PWR_OK signal has risen HIGH. This transition is specified to be less than 10ms. At this point, the PWROK signal from the GMCH is commanded HIGH. At time T6, anywhere from 31 to 44 Real Time Clocks (RTCs) after PWROK has asserted HIGH, the PCIRST# signal from the Input/Output Controller Hub (ICH) asserts HIGH. When PCIRST# asserts HIGH, bus traffic resumes and the system is awake. The ISL6506 and ISL6537 chipset bring all the ACPI rails under their control into regulation between time T3 and T4. This timing assures, even with minimum specified system timings, that the regulators will have their inputs available from the ATX supply and also that the output rails will be in regulation and ready for bus traffic once PCIRST# asserts HIGH.[4][5] Evaluation Board Design ACPI Start Up Timing The ISL6506 and ISL6537 chipset were designed to work in tandem to start up critical voltages within a specific window during the overall start up or sleep recovery process of a typical motherboard. Figure 6 shows a generic desktop sleep state to wake state sequencing. The complete Bill of Material for the evaluation board can be seen in “ISL6537_6506EVAL1 Bill of Material” on page 10. This section gives an overview of the design parameters and decisions made for each regulator. ISL6506 Circuitry The ISL6506 incorporates all the ACPI timing, control and monitoring required for the 5VDUAL and 3.3VDUAL rails, while maintaining a low component count. The Vishay Si7840 was utilized for both N-Channel MOSFET pass elements due to the low RDS(ON) and thermal capabilities of the packaging. Very little power is dissipated from the MOSFET in this application. The P-Channel MOSFET, the Vishay Si7483, was chosen for similar reasons. SLP_S5# OR SLP_S3# PS_ON# +12V, 5V, 3.3V PWR_OK PWROK PCIRST# T1 T2 T3 T4 T5 T6 (NOT TO SCALE) FIGURE 6. GENERIC WAKEUP SEQUENCING 4 The MOSFET thermal capabilities and it’s Rds(on) are the two major considerations when choosing a MOSFET as a pass element for the 5VDUAL and 3.3VDUAL rails. The maximum allowable temperature rise of the MOSFET is used to calculate the maximum power that the MOSFET can dissipate via the thermal resistance ratings of the FET. The maximum Rds(on) of the MOSFET can then be calculated by dividing the maximum allowable power dissipation of the MOSFET by the square of the maximum load current that will flow through the MOSFET. If the datasheet specified Rds(on) of the MOSFET being considered is less than this calculated maximum Rds(on) value, then the MOSFET can be used safely in the application, provided proper layout techniques for thermal dissipation are used. AN1123.0 July 17, 2006 Application Note 1123 ISL6537 Circuitry VDDQ_DDR SWITCHING REGULATOR The VDDQ_DDR switching regulator was designed to handle a 15A continuous output load while maintaining 1.8V. Voltage excursions due to transient loading of 25A/µsec were to be no greater than 50mV with a full 15A load step. In order to supply 15A of continuous current with a duty cycle near 50%, two upper and two lower MOSFETs were utilized. The part chosen for both upper and lower MOSFETs was the Vishay Si7840BDP. The choice of both the MOSFET and the parallel MOSFET configuration will actually allow for a continuous current of at least 20A without the FETs becoming too hot. The transient specifications were met by employing large value capacitors that have relatively low ESR ratings and by using some ceramic capacitors to decrease the effective ESR even more. Three 1800µF bulk capacitors with 16mΩ ESR were utilized as the bulk output capacitance. During a transient, the large capacitance supplies energy to the load while the output inductor current slews up to match the load current. The output inductor was designed so that the ripple voltage on the output rail would be approximately 20mV. A simple wirewound toroidal inductor was designed for this regulator. To save on the Bill of Material (BoM) cost, the same inductor was used on the input filter to the VDDQ regulator. 1.8V VDDQ_DDR rail as the input to the VGMCH LDO, the total drop is only 300mV with the output regulated at 1.5V. With a 10A load on VGMCH, this results in 1.5W of dissipation through each MOSFET pass device. The Vishay Si7840BDP was chosen for both pass elements. The packaging of this device allows for efficient thermal dissipation to the board while supplying full load current. The VTT_GMCH/CPU LDO is a single stage LDO. Again, the pass element chosen was the Vishay Si7840BDP. This allowed for a higher single part count on the BoM while allowing this regulator to source a sufficient amount of load. For all the LDOs, including the VTT_DDR regulator, the output capacitance was chosen to maintain a stable output rail while minimizing voltage excursions due to load transients. Evaluation Board Performance This section presents the performance of the ISL6537_6506EVAL1 evaluation board while subjected to various conditions. VDDQ_DDR Ripple Voltage Figure 7 shows the ripple voltage on the VDDQ output. VDDQ_DDR 20mV/DIV AC COUPLED Since there is an input inductor, the input capacitors must be rated to handle all of the AC RMS current going through the upper MOSFET. The capacitors that were chosen have RMS current ratings that exceed the maximum RMS current expected at full load. The final aspect to the VDDQ_DDR regulator design was to insure the stability of the system. A Type III compensation network was chosen for this design. The compensation components were calculated to give a system bandwidth of about 50kHz with a Phase Margin of approximately 65°. For more information on calculating the compensation components for a single phase buck regulator, see Intersil’s Technical Brief, TB417, titled “Designing Stable Compensation Networks for Single Phase Voltage Mode Buck Regulators.”[3] VUGATE 2V/DIV TIMEBASE: 1µs/DIV FIGURE 7. VDDQ_DDR RIPPLE VOLTAGE Transient Performance LDO REGULATORS The VTT_DDR regulator required minimal design work as the control circuitry and pass element are incorporated within the ISL6537. Except for the pass element and output capacitance, all other circuitry for the remaining LDOs is also contained within the ISL6537. Figures 8 through 12 show the response of the outputs when subjected to a variety of transient loads while in the Active (S0) State. Figure 8 shows VDDQ_DDR under transient loading. The response of the VDDQ_DDR regulator to the transient load brings the output voltage back into regulation very quickly. The VGMCH LDO is a dual stage LDO. The dual stage LDO allows a larger load current to be applied to the output without dissipating excessive power through a single pass element. The ISL6537 was designed so that both linear stages will dissipate the same amount of power. With the 5 AN1123.0 July 17, 2006 Application Note 1123 VDDQ_DDR (1.809V OFFSET) Figure 10 shows VTT_DDR under a transient that causes VTT_DDR to sink current. VDDQ_DDR (1.809V OFFSET) VTT (0.890V OFFSET) VGMCH (1.495V OFFSET) VTT_GMCH/CPU (1.194V OFFSET) VTT (0.909V OFFSET) VGMCH (1.495V OFFSET) VTT_GMCH/CPU (1.194V OFFSET) ILOAD 5A/DIV ILOAD 1A/DIV TIMEBASE: 200ms/DIV ALL SIGNALS AT 50mV/DIV UNLESS OTHERWISE STATED FIGURE 8. TRANSIENT ON VDDQ Figure 9 shows VTT_DDR under a transient loading that causes VTT_DDR to source current. VDDQ_DDR (1.809V OFFSET) VTT (0.909V OFFSET) VGMCH (1.495V OFFSET) VTT_GMCH/CPU (1.194V OFFSET) ILOAD 1A/DIV TIMEBASE: 500ms/DIV ALL SIGNALS AT 50mV/DIV UNLESS OTHERWISE STATED FIGURE 10. SINKING TRANSIENT ON VTT_DDR Again, the reaction of the VDDQ_DDR rail is evident since the loading on the VTT_DDR rail is transferred directly to the VDDQ_DDR rail. In both cases, sourcing and sinking current, where the VTT_DDR rail has been loaded and the VDDQ_DDR rail has responded to the loading, the VTT_DDR rail did not appear to be affected as much as the VDDQ_DDR rail. This is because a linear regulator (VTT_DDR) will respond much faster than a switching regulator (VDDQ_DDR). This is because the inductor current must slew up/down to supply the load current while the linear regulator control will apply more voltage to the gate of the pass FET. Figure 11 shows both VGMCH under transient loading. VDDQ_DDR (1.809V OFFSET) TIMEBASE: 200ms/DIV ALL SIGNALS AT 50mV/DIV UNLESS OTHERWISE STATED FIGURE 9. SOURCING TRANSIENT ON VTT_DDR While the load is being applied to the VTT_DDR rail, there is a noticeable reaction in the VDDQ_DDR rail as well. Since the VTT_DDR rail is derived from the VDDQ_DDR rail, any load on the VTT_DDR rail is seen by the VDDQ_DDR rail. VTT (0.909V OFFSET) VGMCH (1.495V OFFSET) VTT_GMCH/CPU (1.191V OFFSET) ILOAD 1A/DIV TIMEBASE: 500ms/DIV ALL SIGNALS AT 50mV/DIV UNLESS OTHERWISE STATED FIGURE 11. TRANSIENTS ON VGMCH 6 AN1123.0 July 17, 2006 Application Note 1123 Here, too, the linearly regulated VGMCH rail is not affected as much as the VDDQ_DDR rail which acts as the source rail for the VGMCH regulator. Finally, Figure 12 shows the VTT_GMCH/CPU rail under transient loading. VDDQ_DDR (1.809V OFFSET) VTT (0.909V OFFSET) VGMCH (1.495V OFFSET) VTT_GMCH/CPU (1.191V OFFSET) In this example of a fault, the VDDQ_DDR regulator output is shorted to ground. This causes an overcurrent fault response to occur. The VDDQ_DDR regulator is shut down and the internal fault counter increments from 0 to 1. As all the other regulators are cascaded from the VDDQ_DDR regulator, they are also disabled as well. The ISL6537 attempts to restart the system a total of four times with each attempt tripping an overcurrent fault and incrementing the fault counter by one. On the fourth failed retry, the internal fault counter reaches 5 and the system is shut down. The ISL6537 can only be restarted successfully by removing the cause of the fault and then either cycling the bias supply of the ISL6537 or putting the part into an S5 sleep state and then returning to the Run (S0) state. Efficiency Figure 14 shows the efficiency of the VDDQ_DDR regulator while in the S0 State. ILOAD 1A/DIV 95% TIMEBASE: 200ms/DIV ALL SIGNALS AT 50mV/DIV UNLESS OTHERWISE STATED 90% FIGURE 12. TRANSIENTS ON VTT_GMCH/CPU 85% The loading of this rail is light enough such that the response of the VDDQ_DDR rail is negligible. 80% Fault Protection Figure 13 shows response of the system to a fault on the VDDQ_DDR rail. 75% 0 3 6 9 12 15 18 LOAD CURRENT [A] ILOAD 5A/DIV VDDQ_DDR VGMCH VTT_GMCH/CPU VTT_DDR FIGURE 14. VDDQ_DDR EFFICIENCY Measurements were taken at room temperature under thermal equilibrium with no air flow. As the other regulated outputs are all derived through linear regulation, their efficiencies are not shown. The efficiency of the VDDQ_DDR regulator is well above 90% for a majority of the loading range. VVIDPGD 5V/DIV TIMEBASE: 20ms/DIV ALL SIGNALS AT 500mV/DIV UNLESS OTHERWISE STATED 100Ω LOAD ON VTT_DDR, VGMCH, and VTT_GMCH/CPU FIGURE 13. FAULT RESPONSE 7 AN1123.0 July 17, 2006 Application Note 1123 ISL6537_6506EVAL1 Customization Conclusion There are numerous ways in which a designer might modify the ISL6537_6506EVAL1 evaluation board for differing requirements. Some of the changes which are possible include: The ISL6537_6506EVAL1 is a versatile platform that allows designers to gain a full understanding of the functionality of the ISL6506 and ISL6537 chipset in an ACPI compliant system. The board is also flexible enough to allow the designer to modify the board for differing requirements. The following pages provide a schematic, bill of materials, and layout drawings to support implementation of this solution. • The input and output inductors, L200 and L201, for the VDDQ_DDR regulator. • The input and output capacitance for any of the regulators. • The overcurrent trip point of the VDDQ_DDR regulator, programmed through the OCSET resistor, R200. Refer to the ISL6537 datasheet for details on this. References For Intersil documents available on the web, see http://www.intersil.com/ • Changing the value of C104 to alter the soft start profile of the VTT_DDR rail when transitioning from Sleep to Active State. [2] ISL6506 Data Sheet, Intersil Corporation, FN9141. • All MOSFET footprints on the evaluation board allow for either SO8 or PowerPak packaged MOSFETs to be utilized. [3] Designing Stable Compensation Networks for Single Phase Voltage Mode Buck Regulators, Intersil Corporation, TB417. • ISL6506 control can be bypassed by placing 0Ω jumpers at locations R15 and R18. Doing this will short out the NFETs that control the 3VDUAL and 5VDUAL rails. [4] Advanced Configuration and Power Interface Specification, Revision 3.0a, Hewlett Packard, Intel, Microsoft, Phoenix Technologies and Toshiba Corporations. • The output voltage of any regulator, except for VTT_DDR may be modified by changing the voltage programming resistor for the respective regulator. For VDDQ_DDR, change R204; for VGMCH, change R302; for VTT_GMCH/CPU, change R401. If the voltage level is to be modified, always change the resistor that is tied between the feedback point of the error amplifier and ground. Modifying the value of the resistor that is located between the output and the feedback point on the error amplifier may alter the system response characteristics. Refer to the ISL6537 datasheet section titled “Output Voltage Selection” for the equations used to select the resistor values discussed above. [1] ISL6537 Data Sheet, Intersil Corporation, FN9099. [5] ATX Specification, Version 2.2, Intel Corporation • The effect of the S3# and S5# signals on the ATX power supply can be negated by populating resistor Rx11 with a zero ohm jumper. Doing this will cause the PSON# signal to the ATX supply to be hard tied to ground. This will make the ATX supply stay on even in sleep states. 8 AN1123.0 July 17, 2006 Application Note 1123 ISL6537_6506EVAL1 Schematic 5VSBY 12VATX 3V3ATX 5VATX 5VSBY 9 10 1 2 11 4 19 6 20 SIGNAL CONDITIONING J1 PSON S3# S5# 3 5 15 7 16 13 17 14 Rx11 S3# S5# ATX CONNECTOR GND S5 SWITCH S3 SWITCH 5VSBY 12VATX 3V3ATX R500 C500 3 S3# 4 S5# + C602 C603 NC VCC 5VDLSB 3V3AUX S3# EPAD 2 5VATX + C601 + ISL6506 1 5VSBY S5# DLA GND 8 Q602 7 6 5VDUAL 5 + C606 U2 9 R15 DNP Q601 C607 R18 DNP Q600 3V3DUAL 5VSBY 12VATX R100 + C605 L200 C101 C100 C604 5VDUAL D200 12 VDDQ_DDR S5# S3# 23 2 21 Q301 17 R303 20 + C301 19 Q302 VGMCH VIDPGD + S5# OCSET S3# DRIVE4 ISL6537 FB4 18 R200 22 26 PHASE REFADJ4 + C204-206 C201,202 C203 Q200,202 24 VDDQ L201 + C207-209 Q201,203 28 LGATE DRIVE3 COMP FB3 C210-213 7,8 16 C215 R201 C214 R203 C216 15 FB 10 Q400 R204 DRIVE2 R400 11 FB2 VREF_IN VREF_OUT 13 14 C103 C104 R401 C400 R202 C102 VREF_OUT + C401 C200 25 UGATE R302 C302 VTT_GMCH/CPU BOOT VDDQ R301 C303 5VSBY VID_PG 3 P12V 1 U1 DDR_VTT GND DDR_VTTSNS DDR_VTT 5,6 9 C106 + C105 4,27 9 AN1123.0 July 17, 2006 Application Note 1123 ISL6537_6506EVAL1 Bill of Material PKG VENDOR VENDOR P/N QTY C100-103,203 REF DES 0.1µF, 25V, X7R Ceramic Capacitor DESCRIPTION 0603 Various - 5 C104 0.47µF, 10V, X5R Ceramic Capacitor 0603 Various - 1 C105,210213,302,401, 500,604,606 22µF, 6.3V, X5R Ceramic Capacitor 1206 Various - 10 C106,301, 601-603 220µF, 25V, Al Electrolytic Capacitor 8x11.5 Panasonic EEU-FCIE221 5 C200 1000pF, 100V, X7R Ceramic Capacitor 0603 Various - 1 C204-206 2200µF, 6.3V, Al Electrolytic Capacitor 10x20 Rubycon 6.3MBC2200M10X20 3 C207-209, 303,400, 605,607 1800µF, 16V, Al Electrolytic Capacitor 10x23 Rubycon 16MBZ1800M10X23 7 C214 4700pF, 50V, X7R Capacitor 0603 Various - 1 C215 1500pF, 50V, X7R Capacitor 0603 Various - 1 C216 56nF, 25V, X7R Capacitor 0603 Various - 1 D200 Diode S-Mini Panasonic MA732 1 - CoEv MGPWL-00066 2 L200,201 2.2µH, 7T 14AWG on T50-52B Core Q200-203, 301,302, 400,600 30V N-Channel MOSFET PowerPak Vishay Si7840BDP 8 Q601 30V N-Channel MOSFET PowerPak Vishay Si7880DP 1 Q602 30V P-Channel MOSFET PowerPak Vishay Si7483DP 1 R100 10.0kΩ, 1% Resistor 0603 Various - 1 R200 5.76kΩ, 1% Resistor 0603 Various - 1 R201 31.6kΩ, 1% Resistor 0603 Various - 1 R202,301 1.74kΩ, 1% Resistor 0603 Various - 1 R203 21.0Ω, 1% Resistor 0603 Various - 1 R204 1.37kΩ, 1% Resistor 0603 Various - 1 R302 1.96kΩ, 1% Resistor 0603 Various - 1 R303 0Ω Jumper 0603 Various - 1 R400 1.24kΩ, 1% Resistor 0603 Various - 1 R401 2.43kΩ, 1% Resistor 0603 Various - 1 R500 1.00kΩ, 1% Resistor 0603 Various - 1 28ld 6x6mm QFN Intersil ISL6537CR 1 8ld EPSOIC Intersil ISL6506CB 1 U1 ACPI Compliant DDR Power Regulator U2 ACPI Compliant Linear Power Regulator All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 10 AN1123.0 July 17, 2006 Application Note 1123 ISL6537_6506EVAL1 Layout FIGURE 15. TOP SILK SCREEN FIGURE 16. TOP 11 AN1123.0 July 17, 2006 Application Note 1123 ISL6537_6506EVAL1 Layout (Continued) FIGURE 17. INTERNAL 1 GROUND FIGURE 18. INTERNAL 2 POWER 12 AN1123.0 July 17, 2006 Application Note 1123 ISL6537_6506EVAL1 Layout (Continued) FIGURE 19. BOTTOM FIGURE 20. BOTTOM SILK SCREEN (REVERSED) 13 AN1123.0 July 17, 2006