NJL3281D (NPN) NJL1302D (PNP) Complementary ThermalTrakt Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices. Features • • • • • Thermally Matched Bias Diode Instant Thermal Bias Tracking Absolute Thermal Integrity High Safe Operating Area Pb−Free Packages are Available* http://onsemi.com BIPOLAR POWER TRANSISTORS 15 AMP, 260 VOLT, 200 WATT TO−264, 5 LEAD CASE 340AA STYLE 1 Benefits • Eliminates Thermal Equilibrium Lag Time and Bias Trimming • Superior Sound Quality Through Improved Dynamic Temperature • • • Response Significantly Improved Bias Stability Simplified Assembly ♦ Reduced Labor Costs ♦ Reduced Component Count High Reliability MARKING DIAGRAM SCHEMATIC NJLxxxxDG AYYWW Thermal Trak Applications • High−End Consumer Audio Products ♦ • Home Amplifiers Home Receivers Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) ♦ NJLxxxxD = Device Code xxxx = 3281 or 1302 G = Pb−Free Package A = Assembly Location YY = Year WW = Work Week ORDERING INFORMATION Device NJL3281D NJL3281DG NJL1302D NJL1302DG Package Shipping TO−264 25 Units / Rail TO−264 (Pb−Free) 25 Units / Rail TO−264 25 Units / Rail TO−264 (Pb−Free) 25 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 2 1 Publication Order Number: NJL3281D/D NJL3281D (NPN) NJL1302D (PNP) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage Rating VCEO 260 Vdc Collector−Base Voltage VCBO 260 Vdc Emitter−Base Voltage VEBO 5 Vdc VCEX 260 Vdc IC 15 25 Adc Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 W W/°C TJ, Tstg − 65 to +150 °C VR 200 V IF(AV) 1.0 A Collector−Emitter Voltage − 1.5 V Collector Current − Continuous − Peak (Note 1) Operating and Storage Junction Temperature Range DC Blocking Voltage Average Rectified Forward Current THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 0.625 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. ATTRIBUTES Characteristic ESD Protection Value Human Body Model Machine Model Flammability Rating >8000 V > 400 V UL 94 V−0 @ 0.125 in http://onsemi.com 2 NJL3281D (NPN) NJL1302D (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 260 − − 50 − 5 75 75 75 75 45 150 150 150 150 − − 3 30 − − 600 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 260 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) VCE(sat) Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) MHz Cob Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) trr pF V 1.1 0.93 mA 10 100 2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. http://onsemi.com 3 100 ns NJL3281D (NPN) NJL1302D (PNP) TYPICAL CHARACTERISTICS NPN NJL3281D 50 f, T CURRENT BANDWIDTH PRODUCT (MHz) f, T CURRENT BANDWIDTH PRODUCT (MHz) PNP NJL1302D VCE = 10 V 40 5V 30 20 10 0 TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 60 VCE = 10 V 50 5V 40 30 20 TJ = 25°C ftest = 1 MHz 10 0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 2. Typical Current Gain Bandwidth Product Figure 1. Typical Current Gain Bandwidth Product PNP NJL1302D NPN NJL3281D 1000 IC , COLLECTOR CURRENT (A) h FE , DC CURRENT GAIN TJ = 100°C 25°C 100 −25 °C VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 100 −25 °C 10 100 PNP NJL1302D NPN NJL3281D 40 1.5 A IB = 2 A 30 1A 25 0.5 A 20 15 10 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.5 A 1A 30 0.5 A 25 20 15 10 0 25 IB = 2 A 35 5.0 TJ = 25°C 0 1.0 Figure 4. DC Current Gain, VCE = 5 V 40 0 0.1 Figure 3. DC Current Gain, VCE = 5 V 45 5.0 VCE = 5 V IC, COLLECTOR CURRENT (AMPS) 45 35 25°C TJ = 100°C 10 IC, COLLECTOR CURRENT (A) h FE , DC CURRENT GAIN 1000 10 10 TJ = 25°C 0 Figure 5. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. Typical Output Characteristics http://onsemi.com 4 25 NJL3281D (NPN) NJL1302D (PNP) TYPICAL CHARACTERISTICS PNP NJL1302D NPN NJL3281D 2.5 TJ = 25°C IC/IB = 10 2.5 2.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 VBE(sat) 1.5 1.0 0.5 0 TJ = 25°C IC/IB = 10 2.0 1.5 VBE(sat) 1.0 0.5 VCE(sat) VCE(sat) 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0 100 0.1 Figure 7. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 8. Typical Saturation Voltages NPN NJL3281D VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) PNP NJL1302D 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 0.1 VCE = 20 V (SOLID) 0.1 100 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 0.1 VCE = 20 V (SOLID) 0.1 Figure 9. Typical Base−Emitter Voltage 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. Typical Base−Emitter Voltage http://onsemi.com 5 100 NJL3281D (NPN) NJL1302D (PNP) TYPICAL CHARACTERISTICS IC , COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 ms 10 50 ms 1 sec 1.0 250 ms 0.1 1.0 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 11. Active Region Safe Operating Area PNP NJL1302D 10000 Cib Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 NPN NJL3281D Cob 1000 1000 Cob TJ = 25°C ftest = 1 MHz 100 0.1 TJ = 25°C ftest = 1 MHz 1.0 10 100 100 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) Figure 12. NJL1302D Typical Capacitance Figure 13. NJL3281D Typical Capacitance 10 10 TJ = 100°C 1 IF, FORWARD CURRENT (A) IR, REVERSE CURRENT (mA) 0.1 VR, REVERSE VOLTAGE (VOLTS) 0.1 TJ = 25°C 0.01 TJ = −25°C 0.001 0.0001 0 20 40 60 80 1 0.1 100°C 0.001 0.3 100 120 140 160 180 200 25°C −25°C 0.01 VR, REVERSE VOLTAGE (VOLTS) 0.4 0.5 0.6 0.7 0.8 0.9 VF, VOLTAGE (VOLTS) Figure 14. Typical Reverse Current Figure 15. Typical Forward Voltage http://onsemi.com 6 1 1.1 NJL3281D (NPN) NJL1302D (PNP) PACKAGE DIMENSIONS TO−264, 5 LEAD CASE 340AA−01 ISSUE O −T− Q −B− Y 0.25 (0.010) M T B C M E U N A R W L 1 2 3 4 5 P K M G D 5 PL 0.25 (0.010) F 5 PL J H M T B S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 25.857 25.984 26.111 1.018 1.023 1.028 B 19.761 19.888 20.015 0.778 0.783 0.788 C 4.928 5.055 5.182 0.194 0.199 0.204 0.0480 BSC D 1.219 BSC E 2.032 2.108 2.184 0.0800 0.0830 0.0860 1.981 BSC 0.0780 BSC F 0.150 BSC G 3.81 BSC H 2.667 2.718 2.769 0.1050 0.1070 0.1090 0.0230 BSC J 0.584 BSC K 20.422 20.549 20.676 0.804 0.809 0.814 0.444 REF L 11.28 REF −−− 7_ 0_ 7_ 0 _ −−− M 0.180 REF N 4.57 REF P 2.259 2.386 2.513 0.0889 0.0939 0.0989 0.1370 BSC Q 3.480 BSC 0.100 REF R 2.54 REF −−− S 0 _ −−− 8_ 0_ 8_ 0.243 REF U 6.17 REF −−− W 0 _ −−− 6_ 0_ 6_ 0.0940 BSC Y 2.388 BSC STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. ANODE 5. CATHODE S W S ThermalTrak is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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