MJL21193, MJL21194 Preferred Device Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http://onsemi.com • Total Harmonic Distortion Characterized • High DC Current Gain − • • • 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second Pb−Free Packages are Available* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ MARKING DIAGRAM MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5 Vdc Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc Collector Current − Continuous Peak (Note 1) IC 16 30 Adc Base Current − Continuous IB 5 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 200 1.43 W W/_C TJ, Tstg −65 to + 150 _C Symbol Max Unit RqJC 0.7 _C/W Operating and Storage Junction Temperature Range MJL2119x AYYWWG TO−3PBL (TO−264) CASE 340G x A YY WW G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2% = 3 or 4 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping † MJL21193 TO−264 25 Units / Rail TO−264 (Pb−Free) 25 Units / Rail TO−264 25 Units / Rail TO−264 (Pb−Free) 25 Units / Rail MJL21193G MJL21194 MJL21194G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 January, 2007 − Rev. 5 1 Publication Order Number: MJL21193/D MJL21193, MJL21194 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit VCEO(sus) 250 − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − − 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 100 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − − 100 mAdc 4.0 2.25 − − − − 25 8 − − 75 − − − 2.2 − − − − 1.4 4 Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) % − 0.8 − − 0.08 − fT 4 − − MHz Cob − − 500 pF 6.5 6.0 5.5 NPN MJL21194 f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) PNP MJL21193 VCE = 10 V 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25°C ftest = 1 MHz 1.0 10 8.0 7.0 10 V 6.0 5.0 VCE = 5 V 4.0 3.0 2.0 1.0 0 0.1 IC COLLECTOR CURRENT (AMPS) TJ = 25°C ftest = 1 MHz 1.0 10 IC COLLECTOR CURRENT (AMPS) Figure 2. Typical Current Gain Bandwidth Product Figure 1. Typical Current Gain Bandwidth Product http://onsemi.com 2 MJL21193, MJL21194 TYPICAL CHARACTERISTICS PNP MJL21193 NPN MJL21194 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 −25 °C TJ = 100°C 25°C 100 −25 °C VCE = 20 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 4. DC Current Gain, VCE = 20 V PNP MJL21193 NPN MJL21194 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 −25 °C TJ = 100°C 25°C 100 −25 °C VCE = 5 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP MJL21193 NPN MJL21194 35 30 1.5 A 25 20 IB = 2 A I C, COLLECTOR CURRENT (A) I C, COLLECTOR CURRENT (A) 100 Figure 3. DC Current Gain, VCE = 20 V 1000 1A 15 0.5 A 10 5.0 IB = 2 A 30 1.5 A 25 1A 20 15 0.5 A 10 5.0 TJ = 25°C 0 1.0 10 IC COLLECTOR CURRENT (AMPS) 0 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) TJ = 25°C 0 25 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 MJL21193, MJL21194 TYPICAL CHARACTERISTICS PNP MJL21193 NPN MJL21194 TJ = 25°C IC/IB = 10 2.0 1.5 1.0 VBE(sat) 0.5 VCE(sat) 0 0.1 VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 2.5 1.4 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 1.0 VBE(sat) 0.8 0.6 0.4 0.2 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. Typical Saturation Voltages PNP MJL21193 NPN MJL21194 TJ = 25°C 0.1 0.1 TJ = 25°C IC/IB = 10 Figure 9. Typical Saturation Voltages 10 1.0 1.2 0 0.1 VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 VCE = 20 V (SOLID) VCE = 5 V (DASHED) 1.0 10 100 100 10 TJ = 25°C VCE = 20 V (SOLID) 1.0 0.1 0.1 VCE = 5 V (DASHED) 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage 100 IC, COLLECTOR CURRENT (AMPS) 100 1 SEC 10 1.0 0.1 1.0 10 100 1000 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area http://onsemi.com 4 MJL21193, MJL21194 10000 10000 TC = 25°C C, CAPACITANCE (pF) Cib 1000 Cob 100 0.1 1.0 10 100 0.1 100 Cib 1000 f(test) = 1 MHz) Cob f(test) = 1 MHz) 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJL21193 Typical Capacitance Figure 15. MJL21194 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) C, CAPACITANCE (pF) TC = 25°C 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT −50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5 8.0 W 100 MJL21193, MJL21194 PACKAGE DIMENSIONS TO−3BPL (TO−264) CASE 340G−02 ISSUE J Q −T− 0.25 (0.010) −B− M T B M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E U N A 1 R 2 L 3 P F 2 PL K W J H G DIM A B C D E F G H J K L N P Q R U W MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.2 REF 4.35 REF 2.2 2.6 3.1 3.5 2.25 REF 6.3 REF 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.411 REF 0.172 REF 0.087 0.102 0.122 0.137 0.089 REF 0.248 REF 0.110 0.125 D 3 PL 0.25 (0.010) M T B S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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