isl71840seh see test report

Test Report 004
Single Event Effects (SEE) Testing of the ISL71840SEH
16:1 30V Mux
Introduction
SEE Test Objectives
The intense proton and heavy ion environment encountered in
space applications can cause a variety of Single Event Effects
(SEE) in electronic circuitry, including Single Event Upset (SEU),
Single Event Transient (SET), Single Event Functional Interrupt
(SEFI), Single Event Gate Rupture (SEGR), and Single Event
Burnout (SEB). Single event effects can lead to system-level
performance issues including disruption, degradation and
destruction. For predictable and reliable space system
operation, individual electronic components should be
characterized to determine their SEE response. This report
discusses the results of SEE testing performed on the Intersil
ISL71840SEH 16:1 multiplexer (MUX) designed for space
applications.
The ISL71840SEH was tested to determine its susceptibility to
destructive single event effects (SEGR and SEB, collectively
referred to by SEB) and to characterize its Single Event
Transient (SET) behavior over various conditions and ion Linear
Energy Transfer (LET) levels. The ISL71840SEH parts tested
came from lot J67669.1, wafer #3 manufactured on Intersil’s
proprietary P6SOI process.
Product Description
The ISL71840SEH is a 16:1 analog multiplexer (MUX) that
operates with supply voltages from ±10.8V to ±16.5V and
input overvoltage capability to ±35V. The part is also “cold
spare” capable; i.e., inputs of an unpowered part do not leak
more than 1µA to ±35V. The ISL71840SEH is fabricated in a
proprietary Intersil bonded wafer SOI BiCMOS process.
Product Documentation
For more information about the ISL71840SEH, refer to the
following documentation.
• ISL71840SEH datasheet
• Standard Microcircuit Drawing (SMD): 5962-15219
• UG028 “ISL71840SEHEV1Z Evaluation Board User Guide”
SEE Test Facility
Testing was performed at the Texas A&M University (TAMU)
Cyclotron Institute heavy ion facility. This facility is coupled to a
K500 super-conducting cyclotron, which is capable of
generating a wide range of test particles with the various
energy, flux and fluence levels needed for advanced radiation
testing. Details on the test facility can be found on the TAMU
Cyclotron website. Testing was carried out on December 15th
and 16th of 2014.
SEE Test Set-up
SEE testing was carried out with the sample in an active
configuration. A schematic of the ISL71840SEH SEE test
fixture is shown in Figure 1. The test circuit is configured to
accept variable supply voltages and two groupings of variable
input voltages. The addressing of input IN13 is accomplished
with either logic threshold inputs (SW1 closed for 16% and
80% of VREF) or with railed logic inputs (SW1 open for VREF
and GND). The output is set to half of VIN13-GND by a resistor
divider formed from VIN13 to GND.
The ISL71840SEH samples were in standard ceramic flatpack
packages without lids and were assembled on boards that
allowed two parts to be irradiated at one time. A 20-foot
coaxial cable was used to connect the test fixture to a switch
box in the control room, which contained all of the monitoring
equipment. The switch box allowed the two test circuits to be
controlled and monitored remotely.
Digital multimeters were used to monitor pertinent voltages
and currents. LeCroy waveRunner 4-channel digital
oscilloscopes were used to capture and store SET traces at
VOUT that exceeded the oscilloscopes’ ±20mV AC trigger
setting.
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Test Report 004
10k
V+
IS+
VINHI
IINHI
+VS
1
28
OUT
NC
2
27
‐VS
NC
3
26
IN 8
IN 16
4
25
IN 7
IN 15
5
24
IN 6
IN 14
6
23
IN 5
IN 13
7
22
IN 4
IN 12
8
21
IN 3
IN 11
9
20
IN 2
IN 10
10
19
IN 1
IN 9
11
18
ENABLE
GND
12
17 ADDR A0
VREF
13
16 ADDR A1
ADDR A3 14
15 ADDR A2
VOUT
VISVINLO
IINLO
VIN13
IIN13
10k
VREF
IREF
1k
SW1
3.2k
800
80% VREF (4V @ VREF=5V) with SW1 closed, VREF when open
16% VREF (0.8V @ VREF=5V) with SW1 closed, GND when open
FIGURE 1. SCHEMATIC OF THE ISL71840SEH SEE TESTING CONFIGURATION
SEE Damage (SEB) Testing
For the destructive SEE (SEB) tests, conditions were selected to
maximize the electrical and thermal stresses on the device under
test (DUT), thus insuring worst-case conditions. The supply
voltages were set to the part’s absolute maximum rating of
±20V. The input voltages were set to ±17V and ±35V to stress the
switches at relevant extreme conditions. Case temperature was
maintained at +125ºC by controlling the current flowing into a
resistive heater bonded to the underside of the board. Four DUTs
were irradiated with 2.954GeV Au ions at normal incidence
resulting in a surface LET = 86.4MeV•cm2/mg. The normal
range into silicon for these Au ions after 30mm of air is about
118µm with a Bragg peak range of 53µm. More detail can be
found on the TAMU Cyclotron website. These conditions
guaranteed ions transited all active device volume in this SOI
process (about 10µm depth). The switch SW1 in the OPEN
condition provided railed (GND and VREF) enable and address
lines to the parts. Table 1 summarizes the SEB testing
conditions.
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TABLE 1. SEB TESTING CONDITIONS
EFFECTIVE
LET
NUMBER (MeV•cm2/
OF TESTS
mg)
SW1
±VS
(V)
VIN13 VINLO
VINHI
VREF
(V)
Test 1
86.4
OPEN
±20
1.0
-17.00 17.00
+20
Test 2
86.4
OPEN
±20
1.0
-35.00 35.00
+20
NOTE: Exposure was with 2.954GeV Au at 0º incidence for
LET = 86MeV•cm2/mg to a fluence of 5x106 ions/cm2 at case
temperature of +125ºC for each test.
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Test Report 004
The set of parameters monitored to look for indications of device
damage along with the actual measurements appear in Table 2.
The currents represent the sum of the currents for two DUTs as
called out in Table 2. In all cases, the changes in parameters
were within the 8% change of measurement repeatability
without the beam and so it was concluded that there was no
permanent damage sustained by the parts for any of the SEB
testing completed. Each irradiation was carried out to a fluence
of 5x106 ions/cm2. From this data the ISL71840SEH is deemed
to have an SEB cross section of less than 1.5x10-7cm2 to a
confidence of 95% for either test case. Combining all the results
for both tests drives the SEB cross section down to 7.5x10-8 cm2
at a 95% confidence.
TABLE 2. SEB MONITOR PARAMETERS FOR TESTING AT LET0º =
86.4 MeV•cm2/mg and TCASE = +125ºC
DELTA FAILURE
CRITERIA
0.005
8%
8%
8%
MONITORED
PARAMETER
VOUT
(V)
IS+
(µA)
IS(µA)
IREF
(µA)
Pre
0.000
516
512
339
Post
0.000
513
512
340
Pre
0.000
501
499
343
Post
0.000
495
495
342
Pre
0.000
578
574
337
Post
0.000
536
536
337
Pre
0.000
485
482
337
Post
0.000
483
483
338
DUT1
+
DUT2
Test 1
Test 2
DUT3
+
DUT4
Test 1
Test 2
SET Testing of ISL71840SEH 16:1
Analog MUX
SET testing was done on four samples of the ISL71840SEH.
Testing started with gold (Au) at LET0º = 86.4MeV•cm2/mg
and with the SET detection threshold set to ±20mV deviation
AC-coupled on VOUT. Subsequently, the test LET was reduced to
43MeV•cm2/mg (Ag at 0° incidence) and then finally to
20MeV•cm2/mg (Cu at 0° incidence). Two separate conditions
as shown in Table 3 were applied to each of the four parts tested.
TABLE 3. SET TESTING CONDITIONS
NUMBER
OF TESTS
SW1
VS±
(V)
VIN13
VINLO
(V)
VINHI
(V)
VREF
(V)
Test 1
CLOSED
±10.8
1.00
-10.8
10.8
4.5
Test 2
CLOSED
±16.5
1.00
-16.5
16.5
4.5
The first test, tests the part operating at the bottom of the
recommended supply voltage range, ±10.8V. The second test
exercises the part at the maximum of the supply voltage range,
±16.5V. In both cases the VREF is set to the minimum of the
recommended operating range of 4.5V to minimize the noise
margin in the addressing circuits. The lower noise margins
makes the addressing most susceptible to an SEE that could
lead to an address change SET.
Table 4 on page 4 summarizes the SET counts for each test by
DUT and then reports the nominal SET cross section for the
complement of all four DUTs. The cross sections reported are the
nominal found by dividing the event counts by the total fluence
generating those counts.
NOTE: Each irradiation was to a fluence of 5x106 ions/cm2. No
parameter deltas exceeded failure criteria.
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Test Report 004
TABLE 4. ±20mV SET COUNTS FOR TESTING OF THE ISL71840SEH.
TEST LET
and FLUENCE
PER TEST
TEST
CONFIGURATIONS
DUT1
±20mV
EVENT
COUNTS
DUT2
±20mV
EVENT
COUNTS
DUT3
±20mV
EVENT
COUNTS
DUT4
±20mV
EVENT
COUNTS
TOTAL
CROSS
SECTION
(cm2)
COMBINED TEST
CROSS SECTION
(cm2)
3.23x10-4
LET = 86
4x106
Test 1, ±10.8 V
1153
1024
1332
1116
2.89x10-4
Test 2, ±16.5 V
1524
1371
1275
1561
3.58x10-4
LET = 43
4x106
Test 1, ±10.8 V
91
79
62
72
1.90x10-5
Test 2, ±16.5 V
78
80
86
71
2.25x10-5
LET = 20
4x106
Test 1, ±10.8 V
3
0
-
-
3.75x10-7
Test 2, ±16.5 V
1
2
-
-
3.75x10-7
2.08x10-5
3.75x10-7
NOTE: LET listed in MeV•cm2/mg and fluence in ions/cm2.
Post processing of the captured SET oscilloscope traces,
generated the composite plots in Figures 2 through 9 for the
LET = 86.4 MeV•cm2/mg case. These plots show the composite
of the 20 largest and 20 longest for each sense of the extreme
deviation (positive and negative) so they reflect at most the worst
80 SETs observed in the run. Figures 2 through 9 are truncated at
±0.2V as that was the limit of the oscilloscope range; this range
was necessary to allow triggering at ±0.020V. The SET show a
step deviation, either positive or negative, followed by an
exponential decay. The magnitudes of the SET steps are within
about ±0.15V except for one instance and do not appear to
indicate any change of the MUX addressing state driving VOUT
immediately toward either ±10.8V in Figures 2 through 5 or
±16.5V in Figures 6 through 9. This is expected as redundancy
was applied to the address decoding such that an SET causing an
addressing change should be impossible.
The differences between the DUTs in Figures 2 through 5 SET
plots seems more a function of the rarity of the largest and
longest events selected for presentation in the plots than
different fundamental behaviors of the DUTs. For example, the
single largest event seen on DUT4 (lower right plot of Figures 2
through 5 exceeding -0.2V) likely could have occurred in any of
the four DUTs but random chance placed that single event in
DUT4. The similarity of the bulk of the plotted events combined
with this statistical sampling interpretation of the rare events
makes it reasonable to view the four DUTs as representing the
same general underlying SET behavior.
The equivalence of the results in Figures 10 through 13 is much
more readily apparent. All four DUTs produced composites that
look very similar.
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Test Report 004
0.20
0.20
0.15
0.15
SET DEVIATION (V)
SET DEVIATION (V)
Composite Plots
0.10
0.05
0
-0.05
0.10
0.05
0
-0.05
-0.10
-0.10
-0.15
-0.15
-0.20
0
5
10
-0.20
15
0
0.20
0.15
0.15
0.10
SET DEVIATION (V)
SET DEVIATION (V)
0.20
0.05
0
-0.05
15
10
15
0.10
0.05
0
-0.05
-0.10
-0.10
-0.15
-0.15
-0.20
5
10
FIGURE 3.
FIGURE 2.
0
5
TIME (µs)
TIME (µs)
10
-0.20
15
0
TIME (µs)
5
TIME (µs)
FIGURE 4.
FIGURE 5.
0.20
0.20
0.15
0.15
0.10
0.10
SET DEVIATION (V)
SET DEVIATION (V)
NOTE: Figures 2 through 5 are composite plots of extreme SET for LET = 86.4MeV•cm2/mg for DUT1 through DUT4 with ±10.8 V supplies. Each run was
to have a fluence of 4.0x106 ions/cm2. Post processing selected the 20 largest and longest SET in both positive and negative deviations; not all of 80
such plots were unique. The oscilloscope setting limited the captured deviation range to ±0.2V.
0.05
0
-0.05
-0.10
-0.15
-0.20
0.05
0
-0.05
-0.10
-0.15
0
5
TIME (µs)
FIGURE 6.
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5
10
15
-0.20
0
5
TIME (µs)
10
15
FIGURE 7.
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Test Report 004
0.20
0.20
0.15
0.15
0.10
0.10
SET DEVIATION (V)
SET DEVIATION (V)
Composite Plots (Continued)
0.05
0
-0.05
-0.10
-0.15
-0.20
0.05
0
-0.05
-0.10
-0.15
0
5
TIME (µs)
10
-0.20
15
0
FIGURE 8.
5
TIME (µs)
10
15
FIGURE 9.
0.20
0.20
0.15
0.15
0.10
0.10
SET DEVIATION (V)
SET DEVIATION (V)
NOTE: Figures 6 through 9 are composite plot of SET for LET = 86.4MeV•cm2/mg for DUT1 through DUT4 and Test 2, ±16.5 V supplies. Each run was to
a fluence of 4.0x106 ions/cm2. Post processing selected the 20 largest and longest SET in both positive and negative deviations; not all of the 80 such
plots were unique. The oscilloscope setting limited the deviation range to ±0.2V.
0.05
0
-0.05
-0.10
-0.15
-0.20
0.05
0
-0.05
-0.10
-0.15
0
5
TIME (µs)
10
-0.20
15
0
0.20
0.20
0.15
0.15
0.10
0.10
0.05
0
-0.05
-0.10
-0.15
-0.20
10
15
10
15
FIGURE 11.
SET DEVIATION (V)
SET DEVIATION (V)
FIGURE 10.
5
TIME (µs)
0.05
0
-0.05
-0.10
-0.15
0
5
TIME (µs)
FIGURE 12.
10
15
-0.20
0
5
TIME (µs)
FIGURE 13.
NOTE: Figures 10 through 13 are composite plots of extreme SET for LET = 43MeV•cm2/mg for DUT1 through DUT4 in Test 1, ±10.8V supplies. Each run
was to a fluence of 4.0x106 ions/cm2. Post processing selected the 20 largest and longest SET in both positive and negative deviations; not all of 80
such plots were unique. The oscilloscope setting limited the deviation range to ±0.2V
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0.20
0.20
0.15
0.15
0.10
0.10
SET DEVIATION (V)
SET DEVIATION (V)
Composite Plots (Continued)
0.05
0
-0.05
-0.10
0
-0.05
-0.10
-0.15
-0.15
-0.20
0.05
0
5
TIME (µs)
10
-0.20
15
0
0.20
0.20
0.15
0.15
0.10
0.05
0
-0.05
15
0
-0.05
-0.15
-0.15
5
TIME (µs)
10
0.05
-0.10
0
15
0.10
-0.10
-0.20
10
FIGURE 15.
SET DEVIATION (V)
SET DEVIATION (V)
FIGURE 14.
5
TIME (µs)
10
15
FIGURE 16.
-0.20
0
5
TIME (µs)
FIGURE 17.
NOTE: Figures 14 through 17 are composite plots of extreme SET for LET = 43MeV•cm2/mg for DUT1 through DUT4 in Test 2, ±16.5 V supplies. Each
run was to a fluence of 4.0x106 ions/cm2. Post processing selected the 20 largest and longest SET in both positive and negative deviations; not all of 80
such plots were unique. The oscilloscope setting limited the deviation range to ±0.2V.
0.20
SET DEVIATION (V)
0.15
0.10
0.05
0
-0.05
No SET captured for DUT2 at ±10.8V
-0.10
-0.15
-0.20
-10
-5
0
TIME (µs)
FIGURE 18.
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5
10
FIGURE 19.
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Test Report 004
0.20
0.20
0.15
0.15
0.10
0.10
SET DEVIATION (V)
SET DEVIATION (V)
Composite Plots (Continued)
0.05
0
-0.05
-0.10
0
-0.05
-0.10
-0.15
-0.15
-0.20
-10
0.05
-5
0
TIME (µs)
5
10
-0.20
-10
FIGURE 20.
-5
0
TIME (µs)
5
10
FIGURE 21.
NOTE: Figures 18 through 21 are composite plots of extreme SET for LET = 20MeV•cm2/mg for DUT1 and DUT2. Test 1 with ±10.8 V supplies is top row
and Test 2 with ±16.5 V supplies is bottom. Each run was to a fluence of 4.0x106 ions/cm2. All captured SETs are plotted. The oscilloscope setting limited
the deviation range to ±0.2V.
Figures 10 through 17 display the composite SET plots for the
cases of LET = 43MeV•cm2/mg. Clearly the SET deviations are
of considerably lesser magnitude than for the case of
LET = 86MeV•cm2/mg and presage the results for captures at
±20mV for the case of LET = 20MeV•cm2/mg.
Figures 18 through 21 represents all of the SET captured at
LET = 20MeV•cm2/mg triggering on ±20mV. The low counts
encountered for the first four runs (DUT1 and DUT2 at ±10.8 V
and ±16.5 V) led to the second pair if devices (DUT3 and DUT4)
being skipped. The total of six SET captured and displayed in
Figures 18 through 21 are equally distributed positive and
negative and all have approximate magnitudes of just over the
±20mV needed for triggering.
Discussion and Conclusions
SEL and SEB
Testing with Au at LET0º = 86MeV•cm2/mg did not result in
any indications of SEB or SEGR at applied voltages up to the
Absolute Maximum rating of ±20V for supplies and ±35V for
inputs. The 2.954GeV Au had a range into silicon of 117µm and a
Bragg Range of 53µm putting the Bragg peak well into the
inactive handle wafer of the SOI part. Functionality and
operational currents monitored did not change as a result of the
irradiations carried out at a case temperature of +125ºC. A
minimal interpretation of the possible SEB/SEGR cross section is
less than 1.5x10-7cm2 to a 95% confidence at
LET = 86.4MeV•cm2/mg at incidence of 0º for each of the input
voltage conditions (±17V and ±35V). In the total testing the
SEB/SEGR possible cross section is less than 7.5x10-8 cm2 at
95% confidence. This is all tantamount to saying that under
normal operating conditions the ISL71840SEH is not susceptible
to SEB or SEGR failures at up to normal incidence of
LET = 86MeV•cm2/mg.
SET Results
In SET testing no indication of an addressing upset was noted.
However, SET testing did result in events exceeding the ±20mV
threshold criteria at all LET values tested (86, 43, and 20
MeV•cm2/mg all at normal incidence). The SET events nearly
vanished at an LET = 20MeV•cm2/mg yielding a nominal cross
section of 3.75x10-7, about 50x smaller than at
43MeV•cm2/mg. However, this probably means that many SET
were smaller than the trigger value of ±20mV, not that SET
ceased to occur. The total cross section indicated by the SET
capture counts topped out at 3.58x10-4 cm2 at
LET = 86MeV•cm2/mg. The number of SET captures also
depends upon the supply voltages with ±10.8V yielding slightly
fewer captured SET than with ±16.5V so that it appears the SET
results from instantaneous coupling of the output to one of the
supply rails. With a single exception all the SET captured were
within ±100mV deviation. The one exception was at -600mV
peak and -200mV of output charging at LET = 86MeV•cm2/mg.
The observed output SET had decay times of about 15µs. This is
likely set by the capacitive loading on VOUT (about 700pF from
the cabling) and the resistance setting the nominal voltage
(5kΩ). The thus predicted 3.5µs time constant is consistent with
that observed. This is important since the application will
determine this decay constant and hence the SET duration.
The SET study described here utilized a nominal VOUT of 0.5V,
very near GND, so that the rails were almost equally far from the
nominal output voltage. It should be expected that as the
nominal VOUT moves toward a supply rail the SET toward that rail
voltage would diminish in magnitude while those toward the
opposite rail would increase in magnitude. Thus the worst case
SET for a nominal output near a supply rail could be 2x the
magnitudes recorded here.
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the document is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
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