Test Report 011 Total Dose Testing of the ISL71841SEH 32-Channel Analog Multiplexer Introduction This report provides results of a low and high dose rate total dose test of the ISL71841SEH 32-channel analog multiplexer. The test was conducted in order to determine the sensitivity of the part to the total dose environment and to determine if any dose rate sensitivity exists. High and low dose rate testing under bias and with all pins grounded is complete through 150krad(Si) and a subsequent high temperature biased anneal for 168 hours at +100°C. Reference Documents • MIL-STD-883 test method 1019 • ISL71841SEH datasheet. • Standard Microcircuit Drawing (SMD) 5962-15220 Part Description The ISL71841SEH is a radiation hardened 32-channel analog multiplexer that is fabricated using Intersil's proprietary P6SOI Silicon on Insulator (SOI) process to mitigate single-event effects and improve total ionizing dose performance. The part operates from a dual supply voltage ranging from ±10.8V to ±16.5V and has five address inputs and an ENABLE pin that can be driven with adjustable logic thresholds to select 1 of 32 available channels. An inactive channel is separated from an active channel by high impedance, which inhibits any interaction between them. The ISL71841SEH's low switch ON-resistance (rON) allows improved signal integrity and reduced power losses. The ISL71841SEH is also designed for cold sparing, making it suitable for high reliability applications that have redundancy requirements. The part is designed to provide a high impedance to the analog source while in a powered OFF condition, making it easy to add additional backup devices without loading signal sources. The ISL71841SEH also incorporates input analog overvoltage protection up to ±35V, which will disable the switch to protect downstream devices. All inputs are Electrostatic Discharge (ESD) protected to 8kV Human Body Model (HBM). The ISL71841SEH is available in a 48 Ld package ceramic quad flatpack or in die form and operates across the extended temperature range of -55°C to +125°C. February 25, 2016 TR011.1 1 As the 32-channel ISL71841SEH analog multiplexer is an evolution of several earlier 16-channel devices, a brief historical note may be in order. The first Intersil 16-channel analog multiplexer was the HS-1840RH. This part was built in an early dielectrically isolated metal gate CMOS process and was obsoleted in the 1995 time frame. The HS-1840RH was followed by the HS-1840ARH, which was designed in the later dielectrically isolated RSG process and was developed in order to continue supplying this very popular part, which performs a key function in many space systems. As part of the redesign the HS-1840ARH gained some functionality made possible by the bipolar devices available in RSG, which the metal gate process did not support. Bipolar circuit blocks in the HS-1840ARH included the on-chip voltage reference, the digital input ESD network and the VDD and VSS ESD nets. The ISL71841SEH is the subject of the present report and was designed as a 32-channel version of the ISL71840SEH, sharing improvements in the switch ON-resistance and in cold sparing capabilities with that part. A block diagram is shown in Figure 1 on page 2. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015, 2016. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. Test Report 011 VDD A0 IN1 1 OUT A1 A2 A3 A4 IN32 32 EN VSS ADDRESS INPUT BUFFER AND LEVEL SHIFTER DECODERS MULTIPLEX SWITCHES FIGURE 1. ISL71841SEH BLOCK DIAGRAM Test Description Irradiation Facilities High dose rate testing was performed at 69.7rad(Si)/s using a Gamma cell 22060Co irradiator located in the Palm Bay, Florida Intersil facility. Low dose rate testing was performed at 0.0089rad(Si)/s using a Hopewell Designs N40 panoramic low dose rate 60Co irradiator located in the same facility. The irradiations were performed in accordance with MIL-STD-883 Method 1019. The low dose rate exposures used a PbAl box to shield the test board and devices under test against low energy secondary gamma radiation as required by TM1019. The biased anneals were carried out in a small temperature chamber. Test Fixturing Figure 2 on page 3 shows the configuration and power supply sequencing used for biased irradiation. Submit Document Feedback 2 TR011.1 February 25, 2016 Test Report 011 233032-005-665 ISL71841 (HDR/LDR) Mask # 54253A01 R1 6 (S13) 5 (S14) 3 (S16) 2 1 N/C (Out) 48 47 N/C N/C 46 45 44 43 (S32) (S31) (S30) (S29) GND 7 (S12) (S28) 42 8 (S11) (S27) 41 9 (S10) (S26) 40 1.) 2.) 3.) 4.) 5.) V1 = +16.5v, +/- 0.1v V2 = -16.5v, +/-0.1v V3 = +5.5v, +/-0.1v R1 = 1kOhm, +/-5%, ¼ Watt (Per socket) Socket is 48 pin flatpack (Sensata 6290482315-001) 6.) Power up sequence is V1, V2, V3. 7.) Reverse order for power down(V3, V2, V1). 10 (S9) 11 (S8) 12 (S7) 13 (S6) 14 (S5) V1 4 (S15) (S25) 39 (S24) 38 (S23) 37 (S22) 36 (S21) 35 15 (S4) (S20) 34 16 (S3) (S19) 33 17 (S2) (S18) 32 18 (S1) (S17) 31 (Vdd) 19 V3 (Vref) 20 (A0) 21 (A1) 22 (A2) 23 (A3) 24 (A4) 25 N/C 26 N/C 27 (En_B) 28 f1 (Gnd) 29 (Vss) 30 V2 GND FIGURE 2. IRRADIATION BIAS CONFIGURATION AND POWER SUPPLY SEQUENCING FOR THE ISL71841SEH Characterization Equipment and Procedures Downpoints All electrical testing was performed outside the irradiator using production Automated Test Equipment (ATE) with datalogging of all parameters at each downpoint. All downpoint electrical testing was performed at room temperature. Downpoints for the low dose rate tests were zero, 10krad(Si), 30krad(Si), 50krad(Si), 100krad(Si) and 150krad(Si). Downpoints for the high dose rate test were zero, 30krad(Si), 50krad(Si), 100krad(Si) and 150krad(Si). All samples were subjected to a high temperature biased anneal for 168 hours at +100°C following irradiation, using the Figure 2 bias configuration. Experimental Matrix Testing proceeded in accordance with the guidelines of MIL-STD-883 TM1019. The experimental matrix consisted of four samples irradiated at high dose rate under bias, four samples irradiated at high dose rate with all pins grounded, five samples irradiated at low dose rate under bias and five samples irradiated at low dose rate with all pins grounded. Three control units were used to insure repeatable data (See Table 1). Results Attributes Data Table 1 on page 4 summarizes the results of total dose testing of the ISL71841SEH. Samples of the ISL71841SEH were drawn from wafers, 2 (high dose rate samples) and wafers 1, 2 and 5 (low dose rate samples) from development lot J67669 and were packaged in the production hermetic quad flatpack package outline K48.A. The samples were processed through the standard burn-in cycle and were screened to the SMD 5962-15220 electrical limits at room, low and high temperatures before irradiation. Submit Document Feedback 3 TR011.1 February 25, 2016 Test Report 011 TABLE 1. ISL71841SEH TOTAL DOSE TEST ATTRIBUTES DATA DOSE RATE BIAS SAMPLE SIZE DOWNPOINT BIN 1 0.0085rad(Si)/s Figure 2 13 Preirradiation 13 10krad(Si) 13 0 30krad(Si) 13 0 50krad(Si) 13 0 100krad(Si) 13 0 150krad(Si) 13 0 Anneal, 168 hours at +100°C 10 3 Preirradiation 13 10krad(Si) 13 0 30krad(Si) 13 0 50krad(Si) 13 0 100krad(Si) 13 0 150krad(Si) 12 1 Anneal, 168 hours at +100°C 11 2 Preirradiation 4 30krad(Si) 4 0 50krad(Si) 4 0 100krad(Si) 4 0 150krad(Si) 4 0 Anneal, 168 hours at +100°C 4 0 Preirradiation 4 30krad(Si) 4 0 50krad(Si) 4 0 100krad(Si) 4 0 150krad(Si) 4 0 Anneal, 168 hours at +100°C 4 0 0.0085rad(Si)/s 69.7rad(Si)/s 69.7rad(Si)/s Grounded Figure 2 Grounded 13 4 4 REJECTS NOTES: 1. Bin 1 indicates a device that passes all preirradiation specification limits. 2. The 168 hours anneal was performed at +100°C using the bias configuration shown in Figure 2. Submit Document Feedback 4 TR011.1 February 25, 2016 Test Report 011 Variables Data (Figure 13) and the median and minimum/maximum error bars for the high dose rate case (Figure 14). The plots in Figures 3 through 44 show data at all downpoints. The plots show the population median of key parameters as a function of total dose for each of the four irradiation conditions. We chose to plot the median because of the small sample sizes involved and also because the very tight distributions for all parameters. The exceptions to this approach are the plots for the ON-resistance flatness; this parameter showed failures at the 150krad(Si) low dose rate level and after anneal. We show the population median (Figure 12) for both dose rates, the median and minimum/maximum error bars for the low dose rate case Most of the plots show the total dose response of the average of the medians of each of the 32 channels of parameters such as ON-resistance, the digital input parameters and the various leakage parameters for each of the 32 channels in order to facilitate the interpretation of the results as well as managing the length of this report. See conclusion on page 47 for further discussion. Variables Data Plots 450 400 POSITIVE SUPPLY CURRENT (µA) 350 300 250 200 150 LDR Biased LDR GND 100 HDR Biased HDR GND 50 Spec limit 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 3. Median ISL71841SEH positive supply current as a function of total dose irradiation at high and low dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 400µA maximum. Submit Document Feedback 5 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 0 LDR Biased LDR GND -50 HDR Biased HDR GND NEGATIVE SUPPLY CURRENT (µA) -100 Spec limit -150 -200 -250 -300 -350 -400 -450 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 4. Median ISL71841SEH negative supply current as a function of total dose irradiation at high and low dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is -400µA minimum. Submit Document Feedback 6 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 450 400 POSITIVE STANDBY CURRENT (µA) 350 300 250 200 150 LDR Biased 100 LDR GND HDR Biased 50 HDR GND Spec limit 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 5. Median ISL71841SEH positive standby current as a function of total dose irradiation at high and low dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 400µA maximum. Submit Document Feedback 7 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 0 LDR Biased LDR GND -50 HDR Biased HDR GND NEGATIVE STANDBY CURRENT (µA) -100 Spec limit -150 -200 -250 -300 -350 -400 -450 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 6. Median ISL71841SEH negative standby current as a function of total dose irradiation at high and low dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is -400µA minimum. Submit Document Feedback 8 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 40 35 REFERENCE CURRENT (µA) 30 25 20 15 LDR Biased 10 LDR GND HDR Biased 5 HDR GND Spec limit 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 7. Median ISL71841SEH reference current as a function of total dose irradiation at high and low dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 35µA maximum. Submit Document Feedback 9 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 800 700 ON-RESISTANCE (Ω) 600 500 400 300 LDR Biased 200 LDR GND HDR Biased 100 HDR GND Spec limit 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 8. ISL71841SEH ON-resistance, average of the medians of all 32 channels, ±15 V supplies, 1.0mA output current, 15.0V input voltage, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 700Ω maximum. Submit Document Feedback 10 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 600 LDR Biased LDR GND HDR Biased 500 HDR GND Spec limit ON-RESISTANCE (Ω) 400 300 200 100 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 9. ISL71841SEH ON-resistance, average of the medians of all 32 channels, ±15 V supplies, 1.0mA output current, 5.0V input voltage, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 500Ω maximum. Submit Document Feedback 11 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 800 LDR Biased LDR GND 700 HDR Biased HDR GND 600 Spec limit ON-RESISTANCE (Ω) 500 400 300 200 100 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 10. ISL71841SEH ON-resistance, average of the medians of all 32 channels, ±15V supplies, 1.0mA output current, -15.0V input voltage, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 700Ω maximum. Submit Document Feedback 12 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 600 LDR Biased LDR GND HDR Biased 500 HDR GND Spec limit ON-RESISTANCE (Ω) 400 300 200 100 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 11. ISL71841SEH ON resistance, average of the medians of all 32 channels, ±15V supplies, 1.0mA output current, -5.0V input voltage, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 500Ω maximum. Submit Document Feedback 13 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 25 LDR Biased LDR GND HDR Biased 20 HDR GND ON-RESISTANCE (Ω) Spec limit 15 10 5 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 12. ISL71841SEH ON resistance match, average of the medians of all 32 channels, ±15V supplies, -1.0mA output current, +5.0V input voltage, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 20Ω maximum. Submit Document Feedback 14 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 30 Biased LOW DOSE RATE Grounded 25 Spec limit ON-RESISTANCE (Ω) 20 15 10 5 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) AT LOW DOSE RATE FIGURE 13. ISL71841SEH ON resistance match, average of the medians of all 32 channels and plotting min/max error bars as well, ±15V supplies, -1.0mA output current, +5.0V input voltage, as a function of total dose irradiation at low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 20Ω maximum. Submit Document Feedback 15 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 25 Biased HIGH DOSE RATE Grounded Spec limit ON-RESISTANCE (Ω) 20 15 10 5 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) AT HIGH DOSE RATE FIGURE 14. ISL71841SEH ON-resistance match, average of the medians of all 32 channels and plotting min/max error bars as well, ±15V supplies, -1.0mA output current, +5.0V input voltage, as a function of total dose irradiation at high dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 20Ω maximum. Submit Document Feedback 16 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 25 LDR Biased LDR GND HDR Biased 20 HDR GND ON-RESISTANCE (Ω) Spec limit 15 10 5 0 0 50 100 150 200 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 15. ISL71841SEH ON-resistance match, average of the medians of all 32 channels, ±15V supplies, -1.0mA output current, -5.0V input voltage, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 20Ω maximum. Submit Document Feedback 17 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 30 LDR Biased LDR GND HDR Biased 25 HDR GND Spec limit ON-RESISTANCE (Ω) 20 15 10 5 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 16. ISL71841SEH ON-resistance flatness, average of the medians of all 32 channels, ±15V supplies, -1.0mA output current, -5.0V input voltage, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 25Ω maximum. Submit Document Feedback 18 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 150 100 SWITCH OFF LEAKAGE (nA) 50 0 -50 LDR Biased LDR GND HDR Biased -100 HDR GND Spec limit Spec limit -150 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 17. ISL71841SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of the medians of all 32 channels, supply voltage ±15.0V, input voltage +11.5V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -100nA to 100nA. Submit Document Feedback 19 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 150 100 SWITCH OFF LEAKAGE (nA) 50 0 -50 LDR Biased LDR GND HDR Biased -100 HDR GND Spec limit Spec limit -150 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 18. ISL71841SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of the medians of all 32 channels, supply voltage ±15.0V, input voltage -11.5V as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -100nA to 100nA. Submit Document Feedback 20 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 1000 800 600 SWITCH OFF LEAKAGE (nA) 400 200 0 -200 -400 LDR Biased LDR GND -600 HDR Biased HDR GND -800 Spec limit Spec limit -1000 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 19. ISL71841SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of the medians of all 32 channels, supply voltage ±15.0V, input overvoltage +35.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -750nA to +750nA. Submit Document Feedback 21 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 1000 800 600 SWITCH OFF LEAKAGE (nA) 400 200 0 -200 -400 LDR Biased LDR GND -600 HDR Biased HDR GND Spec limit -800 Spec limit -1000 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 20. ISL71841SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of the medians of all 32 channels, supply voltage ±15.0V, input overvoltage -35.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -750nA to +750nA. Submit Document Feedback 22 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 600 400 SWITCH OFF LEAKAGE (nA) 200 0 -200 LDR Biased LDR GND HDR Biased -400 HDR GND Spec limit Spec limit -600 0 50 100 150 200 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 21. ISL71841SEH switch OFF leakage (ID(OFF)) into the drain of an unselected channel, average of the medians of all 32 channels, supply voltage ±15.0V, input overvoltage +35.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -500nA to +500nA. Submit Document Feedback 23 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 600 400 SWITCH OFF LEAKAGE (nA) 200 0 -200 LDR Biased LDR GND HDR Biased -400 HDR GND Spec limit Spec limit -600 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 22. ISL71841SEH switch OFF leakage (ID(OFF)) into the drain of an unselected channel, average of the medians of all 32 channels, supply voltage ±15.0V, input overvoltage -35.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -500nA to +500nA. Submit Document Feedback 24 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 600 400 SWITCH ON LEAKAGE (nA) 200 0 -200 LDR Biased LDR GND HDR Biased -400 HDR GND Spec limit Spec limit -600 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 23. ISL71841SEH switch ON leakage (IS(ON)) into the source of a selected channel, average of the medians of all 32 channels, supply voltage ±15.0V, input overvoltage +35.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -500nA to +500nA. Submit Document Feedback 25 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 600 400 SWITCH ON LEAKAGE (nA) 200 0 -200 LDR Biased LDR GND HDR Biased -400 HDR GND Spec limit Spec limit -600 0 50 100 150 200 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 24. ISL71841SEH switch ON leakage (IS(ON)) into the source of a selected channel, average of the medians of all 32 channels, supply voltage ±15.0V, input overvoltage -35.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -500nA to +500nA. Submit Document Feedback 26 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 150 100 SWITCH OFF LEAKAGE (nA) 50 0 -50 LDR Biased LDR GND HDR Biased -100 HDR GND Spec limit Spec limit -150 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 25. ISL71841SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of the medians of all 32 channels, with supply, address and ENABLE pins open, input voltage +25.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -100nA to +100nA. Submit Document Feedback 27 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 150 100 SWITCH OFF LEAKAGE (nA) 50 0 -50 LDR Biased LDR GND HDR Biased -100 HDR GND Spec limit Spec limit -150 0 50 100 150 200 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 26. ISL71841SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of the medians of all 32 channels, with supply, address and ENABLE pins open, input voltage -25.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -100nA to +100nA. Submit Document Feedback 28 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 600 400 SWITCH ON LEAKAGE (nA) 200 0 -200 LDR Biased LDR GND HDR Biased -400 HDR GND Spec limit Spec limit -600 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 27. ISL71841SEH switch ON leakage (ID(ON)) into the source and drain of a selected channel, average of the medians of all 32 channels, supply voltage ±15.0V, input and output voltage 11.6V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -500nA to +500nA. Submit Document Feedback 29 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 150 100 SWITCH ON LEAKAGE (nA) 50 0 -50 LDR Biased LDR GND HDR Biased -100 HDR GND Spec limit Spec limit -150 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 28. ISL71841SEH switch ON leakage (ID(ON)) into the source and drain of a selected channel, average of the medians of all 32 channels, supply voltage ±15.0V, input and output voltage -11.6V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -100nA to +100nA. Submit Document Feedback 30 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 100 80 60 SWITCH OFF LEAKAGE (nA) 40 20 0 -20 -40 LDR Biased LDR GND -60 HDR Biased HDR GND -80 Spec limit Spec limit -100 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 29. ISL71841SEH switch OFF leakage (ID(OFF)) into the drain with the part disabled, average of the medians of all 32 channels, supply voltage ±15.0V, output voltage +10.0V, input voltage -10.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -80nA to +80nA. Submit Document Feedback 31 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 100 80 60 SWITCH OFF LEAKAGE (nA) 40 20 0 -20 -40 LDR Biased LDR GND -60 HDR Biased HDR GND -80 Spec limit Spec limit -100 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 30. ISL71841SEH switch OFF leakage (ID(OFF)) into the drain with the part disabled, average of the medians of all 32 channels, supply voltage ±15.0V, output voltage -10.0V, input voltage +10.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -80nA to +80nA. Submit Document Feedback 32 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 900 800 700 tALH (ns) 600 500 400 300 LDR Biased 200 LDR GND HDR Biased 100 HDR GND Spec limit 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 31. ISL71841SEH address to output access time, LOW to HIGH, supply voltage ±15.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 800ns maximum. Submit Document Feedback 33 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 900 800 700 tALH (ns) 600 500 400 300 LDR Biased 200 LDR GND HDR Biased 100 HDR GND Spec limit 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 32. ISL71841SEH address to output access time, HIGH to LOW, supply voltage ±15.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 800ns maximum. Submit Document Feedback 34 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 450 LDR Biased LDR GND 400 HDR Biased HDR GND Spec limit 350 Spec limit tBBM (ns) 300 250 200 150 100 50 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 33. ISL71841SEH break-before-make time delay, supply voltage ±15.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are 5ns to 400ns. Submit Document Feedback 35 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 900 800 700 tON(EN) (ns) 600 500 400 300 LDR Biased 200 LDR GND HDR Biased 100 HDR GND Spec limit 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 34. ISL71841SEH enable to output ON delay, supply voltage ±15.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 800ns maximum. Submit Document Feedback 36 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 900 LDR Biased LDR GND 800 HDR Biased HDR GND 700 Spec limit tOFF(EN) (ns) 600 500 400 300 200 100 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 35. ISL71841SEH enable to output OFF delay, supply voltage ±15.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 800ns maximum. Submit Document Feedback 37 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 900 800 700 tALH (ns) 600 500 400 300 LDR Biased 200 LDR GND HDR Biased 100 HDR GND Spec limit 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 36. ISL71841SEH address to output access time, LOW to HIGH, supply voltage ±12.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 800ns maximum. Submit Document Feedback 38 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 900 800 700 tAHL (ns) 600 500 400 300 LDR Biased 200 LDR GND HDR Biased 100 HDR GND Spec limit 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 37. ISL71841SEH address to output access time, HIGH-to-LOW, supply voltage ±12.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 800ns maximum. Submit Document Feedback 39 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 450 LDR Biased LDR GND 400 HDR Biased HDR GND Spec limit 350 Spec limit tBBM (ns) 300 250 200 150 100 50 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 38. ISL71841SEH break-before-make time delay, supply voltage ±12.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are 5ns to 400ns. Submit Document Feedback 40 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 900 800 700 tON(EN) (ns) 600 500 400 300 LDR Biased 200 LDR GND HDR Biased 100 HDR GND Spec limit 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 39. ISL71841SEH enable to output ON delay, supply voltage ±12.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 800ns maximum. Submit Document Feedback 41 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 900 800 700 tOFF(EN) (ns) 600 500 400 300 LDR Biased LDR GND 200 HDR Biased HDR GND 100 Spec limit 0 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 40. ISL71841SEH enable to output OFF delay, supply voltage ±12.0V, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limit is 800ns maximum. Submit Document Feedback 42 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 0.15 0.1 INPUT HIGH CURRENT (µA) 0.05 0 -0.05 LDR Biased LDR GND HDR Biased -0.1 HDR GND Spec limit Spec limit -0.15 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 41. ISL71841SEH input HIGH current, average of all five addresses and ENABLE, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -0.1µA to 1.0µA. Submit Document Feedback 43 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 0.15 0.1 INPUT HIGH CURRENT (µA) 0.05 0 -0.05 LDR Biased LDR GND HDR Biased -0.1 HDR GND Spec limit Spec limit -0.15 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 42. ISL71841SEH input LOW current, average of all five addresses and ENABLE, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are -0.1µA to 1.0µA. Submit Document Feedback 44 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 1.8 INPUT LOW VOLTAGE (V) 1.6 1.4 LDR Biased 1.2 LDR GND HDR Biased HDR GND Spec limit Spec limit 1 0 50 100 150 ANNEAL 200 TOTAL DOSE (krad(Si)) FIGURE 43. ISL71841SEH input LOW voltage, average of all five addresses and ENABLE, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are 1.2V to 1.6V. Submit Document Feedback 45 TR011.1 February 25, 2016 Test Report 011 Variables Data Plots (Continued) 1.8 INPUT HIGH VOLTAGE (V) 1.6 1.4 LDR Biased 1.2 LDR GND HDR Biased HDR GND Spec limit Spec limit 1 0 50 100 150 200 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 44. ISL71841SEH input HIGH voltage, average of all five addresses and ENABLE, as a function of total dose irradiation at high and low dose rate for the biased (Figure 2) and unbiased (all pins grounded) cases. The low dose rate was 0.0085rad(Si)/s and the high dose rate was 69.7rad(Si)/s. Irradiations were followed by a 168-hour biased anneal at +100°C. Sample size for the low dose rate cells was 13 and sample size for the high dose rate cells was 4. The post-irradiation SMD limits are 1.2V to 1.6V. Submit Document Feedback 46 TR011.1 February 25, 2016 Test Report 011 Conclusion This document reports results of 60Co total dose testing of the ISL71841SEH 32-channel analog multiplexer. Parts were tested at low and high dose rate-under biased and unbiased conditions as outlined in MIL-STD-883 Test Method 1019. All irradiations were followed by a 168-hour biased anneal at +100°C. The attributes data is presented in Table 1, while variables data for selected parameters is presented in Figures 3 through 44. Several rejects were encountered after the 150krad(Si) low dose rate irradiation and subsequent anneal, for both the biased and unbiased cases. These rejects were for the ON-resistance flatness parameter at 5V input voltage and were marginal failures. We plot the parameter's median in Figure 12 and have provided additional detail in Figures 13 and 14, which show the ON-resistance match as a function of total dose irradiation at low dose rate only (Figure 13) and at high dose rate only (Figure 14). The low dose rate results are clearly worst case. The postirradiation SMD limit is 20Ω maximum. The ON-resistance flatness parameter for the -5V input voltage case showed good stability. There were no rejects against the Group A limits at the SMD rating of 100krad(Si) at either dose rate, and the part is considered low dose rate insensitive up to its SMD total dose limits. Similarly, no differences between biased and unbiased irradiation were noted, and the part is not considered bias sensitive. TABLE 2. REPORTED PARAMETER FIGURE PARAMETER LIMIT LOW LIMIT HIGH UNIT NOTES 3 Positive Supply Current - 400 µA ±15V supplies 4 Negative Supply Current -400 - µA ±15V supplies 5 Positive Standby Supply Current - 400 µA ±15V supplies 6 Negative Standby Supply Current -400 - µA ±15V supplies 7 Supply Current Into VREF - 35 µA ±15V supplies 8 Switch ON-resistance, Average - 500 Ω VIN = 5V 9 Switch ON-resistance, Average - 700 Ω VIN = 15V 10 Switch ON-resistance, Average - 700 Ω VIN = -15V 11 Switch ON-resistance, Average - 500 Ω VIN = -5V 12 ON-resistance Match, Average - 20 Ω VIN = 5V 15 ON-resistance Match, Average - 20 Ω VIN = -5V 16 OFF Source Leakage, Average -100 100 nA VIN = 11.5V 17 OFF Source Leakage, Average -100 100 nA VIN = -11.5V 18 OFF Source Leakage, Average -750 750 nA 35V overvoltage 19 OFF Source Leakage, Average -750 750 nA -35V overvoltage 20 OFF drain leakage, average -500 500 nA Power OFF, 35V overvoltage 21 OFF Drain Leakage, Average -500 500 nA Power OFF, -35V overvoltage 22 ON Source Leakage, Average -500 500 nA 35V overvoltage 23 ON Source Leakage, Average -500 500 nA -35V overvoltage 24 OFF Source Leakage, Average -100 100 nA Power OFF 25 OFF Source Leakage, Average -100 100 nA Power OFF 26 ON Drain Leakage, Average -100 100 nA Source and drain at 10V 27 ON Drain Leakage, Average -100 100 nA Source and drain at -10V 28 ON Drain Leakage -80 80 nA Part disabled 29 ON Drain Leakage -80 80 nA Part disabled 31 Access Time, LOW to HIGH - 800 ns ±15V supplies 32 Access Time, HIGH to LOW - 800 ns ±15V supplies Submit Document Feedback 47 TR011.1 February 25, 2016 Test Report 011 TABLE 2. REPORTED PARAMETER (Continued) 33 Break-before-make Time 5 400 ns ±15V supplies 34 Enable ON to Output Delay - 800 ns ±15V supplies 35 Enable OFF to Output Delay - 800 ns ±15V supplies 36 Access Time, LOW-to-HIGH - 800 ns ±12V supplies 37 Access Time, HIGH-to-LOW - 800 ns ±12V supplies 38 Break-before-make time 5 400 ns ±12V supplies 39 Enable ON to Output Delay - 800 ns ±12V supplies 40 Enable OFF to Output Delay - 800 ns ±12V supplies 41 Input HIGH Current, Average -100 100 nA A0 – A4 and ENABLE 42 Input LOW Current, Average -100 100 nA A0 – A4 and ENABLE 43 Input LOW Voltage, Average 1.2 1.6 V A0 – A4 and ENABLE 44 Input HIGH Voltage, Average 1.2 1.6 V A0 – A4 and ENABLE NOTE: Limits are taken from Standard Microcircuit Drawing (SMD) 5962-15220. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that the document is current before proceeding. For information regarding Intersil Corporation and its products, see www.intersil.com Submit Document Feedback 48 TR011.1 February 25, 2016