ISL705ARH ELDRS Test Report

Total dose testing of the ISL705ARH radiation hardened microprocessor supervisory
circuit
Nick van Vonno
Intersil Corporation
Revision 1
February 2012
Table of Contents
1.
2.
3.
4.
5
6
7
Introduction
Reference Documents
Part Description
Test Description
4.1 Irradiation facility
4.2 Test fixturing
4.3 Characterization equipment and procedures
4.4 Experimental Matrix
4.5 Downpoints
Results
5.1 Results and conclusions
5.2 Variables data
Appendices
6.1 Reported parameters
Document revision history
1
1. Introduction
This report reports the results of a low and high dose rate total dose test of the ISL705ARH
microprocessor supervisory circuit. The test was conducted in order to determine the sensitivity of
the part to the total dose environment and to determine if dose rate and bias sensitivity exist.
Intersil markets six versions of the ISL705*RH (ISL705A/B/C) with the differences being limited to
the operation of the reset pin (active high, active low, and active low open drain output). These are
minor functional difference and the total dose data for the ISL705ARH applies to the other versions.
The base ISL705*RH is acceptance tested on a wafer by wafer basis to 100 krad(Si) at high dose
rate, as defined in MIL-STD-883 test method 1019 (50 – 300 rad(Si)/s). The ISL705*EH is
acceptance tested on a wafer by wafer basis to 100 krad(Si) at high dose rate, as defined in MILSTD-883 test method 1019 (50 – 300 rad(Si)/s), and to 50 krad(Si) at low dose rate, also as defined
in method 1019 (0.01 rad(Si)/s maximum). The ISL705*RH and ISL705*EH are identical parts.
These total dose test results are intended to apply to the following devices:
ISL705ARH and ISL705AEH - Reset pin is an active high
ISL705BRH and ISL705BEH - Reset pin is an active low
ISL705CRH and ISL705CEH - Reset pin is an active low open drain output
2. Reference Documents
MIL-STD-883H test method 1019.8
ISL705ARH data sheet
DLA Standard Microcircuit Drawing (SMD) 5962-11213
3: Part Description
The ISL705ARH is a radiation hardened 5.0V supervisory circuit that reduces the complexity
required to monitor supply voltages in microprocessor systems. The device significantly improves
accuracy and reliability relative to discrete solutions. Each IC provides four key functions:
1. A reset output during power-up, power-down, and brownout conditions.
2. An independent watchdog output that goes low if the watchdog input has not
been toggled within 1.6s.
3. A precision threshold detector for monitoring a power supply other than VDD.
4. An active-low manual-reset input.
The ISL705ARH has been specifically designed and manufactured to provide reliable performance
in harsh radiation environments. It is total dose hardened to 100krad(Si) at high dose rate and
offers guaranteed performance over the full -55oC to +125oC military temperature range.
Specifications for radiation hardened QML devices are controlled by the Defense Logistics Agency
(Land and Maritime) in Columbus, OH (DLA). The SMD number must be used when ordering.
Detailed electrical specifications for the ISL705ARH are contained in SMD 5962-11213. A link is
provided on the Intersil Web site for downloading this document.
2
Figure 1: ISL705ARH block diagram.
4: Test Description
4.1 Irradiation Facilities
High dose rate testing of the ISL705ARH was performed using a Gammacell 220 60Co irradiator
located in the Palm Bay, Florida Intersil facility. Low dose rate testing was performed using a J. L.
Shepherd model 484 60Co irradiator. The high dose rate irradiations were done at 85rad(Si)/s and
the low dose rate work was performed at 0.010rad(Si)/s, both per MIL-STD-883 Method 1019.
4.2 Test Fixturing
Figure 2 shows the electrical configuration used for biased irradiation in conformance with Standard
Microcircuit Drawing (SMD) 5962-11213.
3
NOTES:
V1 = 5.5 V 5%
V2 = 1.4 V 5%
R1 = OPEN for this device.
Figure 2: Irradiation bias configuration for the ISL705ARH per Standard Microcircuit Drawing
(SMD) 5962-11213.
4.3 Characterization equipment and procedures
All electrical testing was performed outside the irradiator using the production automated test
equipment (ATE) with datalogging at each downpoint. Downpoint electrical testing was performed
at room temperature.
4.4 Experimental matrix
Total dose irradiations proceeded in accordance with the guidelines of MIL-STD-883 Test Method
1019.7. The experimental matrix consisted of eight samples irradiated at high dose rate with all pins
grounded, eight samples irradiated at high dose rate under bias, eight samples irradiated at low
dose rate with all pins grounded and eight samples irradiated at low dose rate under bias. Four
control units were used.
Samples of the ISL705ARH die were drawn from production lot WMA4H and were packaged in the
standard hermetic 8-pin solder-sealed flatpack (CDFP4-F16) production package. Samples were
processed through the standard burnin cycle before irradiation, as required by MIL-STD-883, and
were screened to the SMD 5962-11213 limits at room, low and high temperatures prior to the test.
4.5 Downpoints
4
Downpoints for the tests were zero, 10krad(Si), 25krad(Si), 50krad(Si), 100krad(Si) and
150krad(Si) for the high and low dose rate tests.
5: Results
5.1 Results and conclusions
Testing at both dose rates to 150krad(Si) of the ISL705ARH is complete. All samples showed
excellent stability and remained within the SMD limits at all downpoints, and no dose rate sensitivity
or bias sensitivity was observed in any parameter. The control units indicated good repeatability of
the ATE hardware, fixturing and software at all downpoints. The part is not considered low dose
rate or bias sensitive.
A rebound test after the high dose rate irradiation was not performed, as the P6 process has
been characterized for this effect using the ISL75051SRH as a test vehicle. The process was
shown to display no rebound effects after a post-irradiation anneal under bias at +100oC for 168
hours. These conditions are as specified in MIL-STD-883. A similar anneal of the samples was
performed after the low dose rate irradiation for informational purposes only; no rebound was
observed.
5.2 Variables data
The plots in Figures 3 through 25 show data at all downpoints. The plots show the median of
key parameters as a function of total dose for each of the four irradiation conditions, as well as the
control unit data and the applicable SMD limits. We chose to plot the median for these parameters
due to the relatively small sample sizes involved.
540
Low dose rate, biased
530
Low dose rate, grounded
Supply current, μA
High dose rate, biased
520
High dose rate, grounded
510
Control units
Spec limit
500
490
480
470
460
450
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 3: ISL705ARH power supply current as a function of total dose irradiation at low and high dose rate for the
unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and the high dose
rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD limit is 530μA
maximum.
5
30
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
PFI input HIGH current, μA
20
10
0
-10
-20
-30
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 4: ISL705ARH power fail input (PFI) input high current as a function of total dose irradiation at low and high dose
rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and
the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD
limits are -25.0μA to 25.0μA.
30
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
PFI input LOW current, μA
20
10
0
-10
-20
-30
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 5: ISL705ARH power fail input (PFI) input low current as a function of total dose irradiation at low and high dose
rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and
the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD
limits are -25.0μA to 25.0μA.
6
PFO output HIGH voltage, V
5.5
5
4.5
4
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
3.5
High dose rate, grounded
Control units
Spec limit
3
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 6: ISL705ARH power fail output (PFO) output high voltage as a function of total dose irradiation at low and high
dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s
and the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation
SMD limit is 3.5V minimum.
450
Low dose rate, biased
PFO output LOW voltage, mV
400
Low dose rate, grounded
High dose rate, biased
350
High dose rate, grounded
300
Control units
Spec limit
250
200
150
100
50
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 7: ISL705ARH power fail output (PFO) output low voltage as a function of total dose irradiation at low and high
dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s
and the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation
SMD limit is 400.0mV maximum.
7
Reset voltage threshold, rising, V
4.8
4.75
4.7
4.65
4.6
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
4.55
4.5
4.45
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 8: ISL705ARH reset threshold voltage, rising, as a function of total dose irradiation at low and high dose rate for
the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and the high
dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD limits are
4.50V to 4.75V.
Reset voltage threshold, falling, V
4.8
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
4.75
4.7
4.65
4.6
4.55
4.5
4.45
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 9: ISL705ARH reset threshold voltage, falling, as a function of total dose irradiation at low and high dose rate for
the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and the high
dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD limits are
4.50V to 4.75V.
8
Reset voltage threshold hysteresis, mV
100
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 10: ISL705ARH reset threshold voltage hysteresis as a function of total dose irradiation at low and high dose rate
for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and the
high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD limit
is 20mV minimum.
450
Reset LOW output voltage, mV
400
350
300
250
200
150
Low dose rate, biased
Low dose rate, grounded
100
High dose rate, biased
High dose rate, grounded
Control units
50
Spec limit
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 11: ISL705ARH reset low output voltage as a function of total dose irradiation at low and high dose rate for the
unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and the high dose
rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD limit is
400.0mV maximum.
9
6
Low dose rate, biased
Low dose rate, grounded
Reset HIGH output voltage, V
5.5
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
5
4.5
4
3.5
3
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 12: ISL705ARH reset high output voltage as a function of total dose irradiation at low and high dose rate for the
unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and the high dose
rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD limit is 3.5V
minimum.
300
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
280
Reset pulse width 1, ms
260
240
220
200
180
160
140
120
100
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 13: ISL705ARH reset pulse width 1 as a function of total dose irradiation at low and high dose rate for the
unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and the high dose
rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD limits are
140.0ms to 280.0ms.
10
300
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
280
Reset pulse width 2, ms
260
240
220
200
180
160
140
120
100
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 14: ISL705ARH reset pulse width 2 as a function of total dose irradiation at low and high dose rate for the
unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and the high dose
rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD limits are
140.0ms to 280.0ms.
350
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
Reset output voltage, mV
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 15: ISL705ARH reset output voltage as a function of total dose irradiation at low and high dose rate for the
unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and the high dose
rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD limit is
300.0mV maximum.
11
450
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
WDO LOW output voltage, mV
400
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 16: ISL705ARH watchdog output (WDO) low voltage as a function of total dose irradiation at low and high dose
rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and
the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD
limit is 400.0mV maximum.
5
WDO HIGH output voltage, mV
4.8
4.6
4.4
4.2
4
3.8
Low dose rate, biased
3.6
Low dose rate, grounded
High dose rate, biased
3.4
High dose rate, grounded
Control units
3.2
Spec limit
3
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 17: ISL705ARH watchdog output (WDO) high voltage as a function of total dose irradiation at low and high dose
rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and
the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD
limit is 3.5V minimum.
12
120
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
WDI HIGH input current, μA
100
80
60
40
20
0
-20
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 18: ISL705ARH watchdog input (WDI) input high current as a function of total dose irradiation at low and high
dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s
and the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation
SMD limit is 100μA maximum.
20
WDI LOW input current, μA
0
-20
-40
-60
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
-80
-100
-120
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 19: ISL705ARH watchdog input (WDI) input low current as a function of total dose irradiation at low and high
dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s
and the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation
SMD limit is -100μA maximum.
13
2.4
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
Watchdog timeout period, s
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 20: ISL705ARH watchdog timeout period as a function of total dose irradiation at low and high dose rate for the
unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and the high dose
rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD limits are
1.00s to 2.25s.
120
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
Manual reset to reset out delay, ns
110
100
90
80
70
60
50
40
30
20
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 21: ISL705ARH manual reset to reset out delay as a function of total dose irradiation at low and high dose rate
for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.01rad(Si)/s and the
high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The post-irradiation SMD limit
is 100ns maximum.
14
PFI input threshold voltage, rising, V
1.32
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
1.3
1.28
1.26
1.24
1.22
1.2
1.18
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 22: ISL705ARH power fail input (PFI) threshold voltage, rising, as a function of total dose irradiation at low and
high dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was
0.01rad(Si)/s and the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The
post-irradiation SMD limits are 1.2V to 1.3V.
PFI input threshold voltage, falling, V
1.32
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
1.3
1.28
1.26
1.24
1.22
1.2
1.18
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 23: ISL705ARH power fail input (PFI) threshold voltage, falling, as a function of total dose irradiation at low and
high dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was
0.01rad(Si)/s and the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used. The
post-irradiation SMD limits are 1.2V to 1.3V.
15
PFI rising threshold to PFO delay, μs
16
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 24: ISL705ARH power fail input (PFI) rising threshold voltage to PFO delay as a function of total dose irradiation
at low and high dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate
was 0.01rad(Si)/s and the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used.
The post-irradiation SMD limit is 15μs maximum.
PFI falling threshold to PFO delay, μs
40
Low dose rate, biased
Low dose rate, grounded
High dose rate, biased
High dose rate, grounded
Control units
Spec limit
Spec limit
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
Total dose, krad(Si)
Figure 25: ISL705ARH power fail input (PFI) falling threshold voltage to PFO delay as a function of total dose irradiation
at low and high dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate
was 0.01rad(Si)/s and the high dose rate 85rad(Si)/s. Sample size for each cell was 8, and 4 control units were used.
The post-irradiation SMD limit is 35μs maximum.
16
6: Appendices
6.1: Reported parameters.
Figure
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Parameter
Power supply current
Power fail input (PFI) input high current
Power fail input (PFI) input low current
Power fail output (PFO) output high voltage
Power fail output (PFO) output low voltage
Reset threshold voltage, rising
Reset threshold voltage, falling
Reset threshold voltage hysteresis
Reset low output voltage
Reset high output voltage
Reset pulse width 1
Reset pulse width 2
Reset output voltage
Watchdog output (WDO) low voltage
Watchdog output (WDO) high voltage
Watchdog input (WDI) input high current
Watchdog input (WDI) input low current
Watchdog timeout period
Manual reset to reset out delay
Power fail input (PFI) threshold voltage, rising
Power fail input (PFI) threshold voltage, falling
PFI rising threshold voltage to PFO delay
PFI falling threshold voltage to PFO delay
Limit,
low
Limit,
high
Units
-25.0
-25.0
3.5
4.5
4.5
20
3.5
140
140
-
530
25.0
25.0
400.0
4.75
4.75
400.0
280
280
300
400.0
-100.0
-100.0
2.25
100
1.3
1.3
15
35
μA
μA
μA
V
mV
V
V
mV
mV
V
ms
ms
mV
mV
V
μA
μA
s
ns
V
V
μs
μs
3.5
1.0
1.2
1.2
-
Note 1: Limits are taken from Standard Microcircuit Drawing (SMD) 5962-11213.
7: Document revision history
Revision Date
0
January 2012
1
February 2012
Pages
All
2
Comments
Original issue
Add ISL705B/C text
17
Notes