Band Switching Diodes MA6X078 (MA78) Silicon epitaxial planar type 6 1 0.30+0.10 –0.05 0.50+0.10 –0.05 1.1+0.2 –0.1 10° Rating 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C Symbol Unit Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Operating ambient temperature* Topr −25 to +85 °C Storage temperature Tstg −55 to +150 °C Note) * : Maximum ambient temperature during operation 0.4±0.2 1.50+0.25 –0.05 2 (0.65) 3 1.1+0.3 –0.1 • Non connected three elements incorporated in one package • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 5° 5 0.16+0.10 –0.06 2.8+0.2 –0.3 4 ■ Features Parameter Unit : mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) For band switching 1 : Cathode 1 4 : Anode 3 2 : Cathode 2 5 : Anode 2 3 : Cathode 3 6 : Anode 1 Mini6-G1 Package Marking Symbol: M2L Internal Connection 6 1 5 2 4 3 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 33 V 0.01 100 nA Forward voltage (DC) VF IF = 100 mA 0.92 1 V Diode capacitance CD VR = 6 V, f = 1 MHz 0.9 1.2 pF IF = 2 mA, f = 100 MHz 0.65 0.85 Ω Forward dynamic resistance* rf Note) 1. Each characteristic is a standard for individual diodes 2. Rated input/output frequency: 100 MHz 3. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER Note) The part number in the parenthesis shows conventional part number. 243 MA6X078 Band Switching Diodes IF V F 103 IR T a CD VR 10 Ta = 25°C 102 f = 1 MHz Ta = 25°C VR = 33 V 10 1 Reverse current IR (nA) Diode capacitance CD (pF) Forward current IF (mA) 5 102 3 2 1 0.5 0.3 10 1 10−1 0.2 10−1 0.1 0 0.2 0.4 0.6 0.8 1.0 10–2 0 4 8 12 16 20 24 28 32 36 40 rf IF rf f 0.8 0.6 0.4 0.2 0 1 3 10 30 Forward current IF (mA) 244 1.0 f = 100 MHz Ta = 25°C Forward dynamic resistance rf (Ω) Forward dynamic resistance rf (Ω) 1.0 100 IF = 2 mA Ta = 25°C 0.8 0.6 0.4 0.2 0 10 30 100 300 Frequency f (MHz) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) Reverse voltage VR (V) Forward voltage VF (V) 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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