Switching Diodes MA6X125 (MA125) Silicon epitaxial planar type Unit : mm + 0.2 For switching circuits 2.8 − 0.3 + 0.25 5 2 4 3 V Peak reverse voltage VRM 40 V IF 100 mA Forward current (DC)* Peak forward current* IFM 200 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 + 0.1 + 0.1 0.16 − 0.06 Unit 40 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Rating VR 0.8 Parameter + 0.2 Symbol Reverse voltage (DC) 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.45 ± 0.1 + 0.2 2.9 − 0.05 1.9 ± 0.2 0.95 0.95 • Four-element contained in one package, allowing high-density mounting 0.3 − 0.05 1 6 ■ Features 0.65 ± 0.15 1.5 − 0.05 0.5 − 0.05 0.65 ± 0.15 1 : Cathode 1 2 : Anode 2 3 : Cathode 3 Anode 4 4 : Anode 3 5 : Cathode 4 6 : Anode 1 Cathode 2 Mini Type Package (6-pin) Note) *1 : Value for single diode Marking Symbol: M2I Internal Connection 6 1 5 2 4 3 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ IR VR = 40 V Forward voltage (DC) VF IF = 100 mA Reverse voltage (DC) VR IR = 100 µA Ct VR = 0 V, f = 1 MHz trr1*1 IF = 10 mA, VR = 6 V 150 Irr = 0.1 · IR, RL = 100 Ω 90 Reverse current (DC) Terminal capacitance Reverse recovery time*3 trr2 *2 Max Unit 100 nA 1.2 40 V V 5 pF ns Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 1 and 6, Between pins 3 and 5 *2 : Between pins 2 and 6, Between pins 3 and 4 *3 : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. 113 MA6X125 Switching Diodes IF V F IR V R IF V F 1 000 10 1 000 Between pins 2 and 6, 3 and 4 Between pins 1 and 6, 3 and 5 Ta = 100°C 1 Ta = 150°C 10 100°C 25°C − 20°C 1 Reverse current IR (nA) 100 Forward current IF (mA) Forward current IF (mA) 100 10 1 Ta = 150°C 100°C 25°C 0.1 0.1 0.1 0.01 25°C 0.001 − 20°C Between pins 2 and 6, 3 and 4 0.01 0 0.2 0.4 0.6 0.8 1.0 0.01 1.2 0 Forward voltage VF (V) 0.2 0.4 0.6 0.8 1.0 1.2 0.000 1 0 VF Ta 40 50 60 1.6 Between pins 2 and 6, 3 and 4 Ta = 100°C 30 VF Ta 1.6 10 20 Reverse voltage VR (V) Forward voltage VF (V) IR VR 10 Between pins 1 and 6, 3 and 5 1.4 1.4 0.1 0.01 25°C 1.2 Forward voltage VF (V) Forward voltage VF (V) Reverse current IR (nA) 1 IF = 100 mA 1.0 0.8 10 mA 0.6 3 mA 0.4 1.2 IF = 100 mA 1.0 0.8 10 mA 0.6 3 mA 0.4 0.001 0.2 0.2 Between pins 1 and 6, 3 and 5 0 10 20 30 40 50 0 –40 60 0 IR Ta 10 120 160 0 −40 200 0 40 80 120 Ct VR 6V Reverse current IR (nA) 1 1V 0.1 0.01 1V 0.1 0.01 0.001 0.001 0.000 1 –40 0.000 1 −40 200 6.0 f = 1 MHz Ta = 25°C VR = 40 V 6V 160 Ambient temperature Ta (°C) Between pins 1 and 6, 3 and 5 VR = 40 V Reverse current IR (nA) 80 IR T a 10 Between pins 2 and 6, 3 and 4 1 40 Ambient temperature Ta (°C) Reverse voltage VR (V) Terminal capacitance Ct (pF) 0.000 1 5.0 4.0 3.0 2.0 Between pins 1 and 6, 3 and 5 1.0 Between pins 2 and 6, 3 and 4 0 40 80 120 160 Ambient temperature Ta (°C) 114 200 0 0 40 80 120 160 Ambient temperature Ta (°C) 200 0 10 20 30 40 50 Reverse voltage VR (V) 60 Switching Diodes MA6X125 IF(surge) tW Forward surge current IF(surge) (A) 1 000 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 Between pins 1 and 6, 3 and 5 3 1 Between pins 2 and 6, 3 and 4 0.3 0.1 0.03 0.1 0.3 1 3 10 30 Pulse width tW (ms) 115 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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