Small Signal Transistor Arrays UNA0227 (UN227) Transistor array to drive the small motor ■ Features ● 5 0.2+0.1 –0.0 (0.5) 0.4±0.1 4 3 2 1 ● For motor drives Small motor drive circuits in general 6 7 12˚ ■ Absolute Maximum Ratings (Ta=25±3˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO ±10 V Collector to emitter voltage VCEO ±10 V Emitter to base voltage VEBO ±7 V IC ±1.5 A Collector current Peak collector current ICP ±2 A Total power dissipation PT* 0.5 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Note: ± marks used above: +: NPN part, –: PNP part * TC = 25˚C only when the elements are active 8 9 10 0.9±0.1 6.5±0.3 (0.8) 1.5±0.1 1.5+0.2 –0.1 ● 12˚ ■ Applications 0.5±0.2 ● 45˚ ● Unit: mm Small and lightweight Low power consumption Low-voltage drive With 8 elements incorporated 5.5±0.3 7.7±0.3 ● SO10-G1 Package Internal Connection 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 Note.) The Part number in the Parenthesis shows conventional part number. 1 Small Signal Transistor Arrays ■ Electrical Characteristics Parameter 2 (Ta=25˚C) Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector cutoff current ICBO Collector cutoff current ICEO Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Cob Forward voltage VF *Pulse measurement UNA0227 Conditions min (NPN) IC = 10µA, IE = 0 10 (PNP) IC = –10µA, IE = 0 –10 (NPN) IC = 1mA, IB = 0 10 (PNP) IC = –1mA, IB = 0 –10 (NPN) IE = 10µA, IC = 0 7 (PNP) IE = –10µA, IC = 0 –7 typ max Unit V V V (NPN) VCB = 7V, IE = 0 1 (PNP) VCB = –7V, IE = 0 –1 (NPN) VCE = 10V, IB = 0 2 (PNP) VCE = –10V, IB = 0 –2 (NPN) VCE = 1V, IC = 400mA* 200 700 (PNP) VCE = –1V, IC = –400mA* 200 700 (NPN) IC = 1A, IB = 25mA* 0.25 (PNP) IC = –1A, IB = –25mA* – 0.35 (NPN) VCB = 6V, IE = –50mA, f = 200MHz 120 (PNP) VCB = –6V, IE = 50mA, f = 200MHz 120 (NPN) VCB = 6V, IE = 0, f = 1MHz 25 (NPN) VCB = –6V, IE = 0, f = 1MHz 35 µA µA V MHz pF (NPN) IF = 0.5A 1.3 (PNP) IF = – 0.5A –1.3 V Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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