TSM6NB60 C14

TSM6NB60
600V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
Unit
VDS
600
V
RDS(on) (max)
1.6
Ω
Qg
18.3
nC
Ordering Information
Part No.
TSM6NB60CZ C0G
Block Diagram
Package
Packing
TO-220
50pcs / Tube
TSM6NB60CI C0G
ITO-220
50pcs / Tube
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25°C
(Note 1)
TC = 100°C
Pulsed Drain Current (Note 2)
TO-220
Operating Junction and Storage Temperature Range
Unit
600
V
VGS
±30
V
6
ID
PDTOT
(Note 3)
ITO-220
VDS
A
3.6
IDM
Total Power Dissipation @ TC=25°C
Single Pulsed Avalanche Energy
Limit
24
125
A
40
W
EAS
83
mJ
TJ, TSTG
- 55 to +150
°C
Symbol
Limit
Unit
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJC
1
3.1
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62.5
65
°C/W
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Version: C14
TSM6NB60
600V N-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
(Note 4)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
600
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2.5
3.6
4.5
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
10
µA
Drain-Source On-State Resistance
VGS = 10V, ID =3A
RDS(on)
--
1.12
1.6
Ω
Qg
--
18.3
--
Qgs
--
5.26
--
Qgd
--
6.84
--
Ciss
--
872
--
Coss
--
104
--
Crss
--
15
--
td(on)
--
23
--
tr
--
9.4
--
td(off)
--
35.6
--
tf
--
6.8
--
VSD
--
--
1.4
Dynamic
(Note 5,6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 480V, ID = 6A,
VGS = 10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 25V, VGS = 0V,
f = 1.0MHz
nC
pF
(Note 5,6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 300V, RGEN = 25Ω,
ID = 6A, VGS = 10V,
Turn-Off Fall Time
ns
Source-Drain Diode
Forward On Voltage
IS = 6A, VGS = 0V
V
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. L = 10mH, IAS = 3.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
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Version: C14
TSM6NB60
600V N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Current vs. Voltage
3/8
Version: C14
TSM6NB60
600V N-Channel Power MOSFET
Electrical Characteristics Curves
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (TO-220)
Maximum Safe Operating Area (ITO-220)
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Version: C14
TSM6NB60
600V N-Channel Power MOSFET
Electrical Characteristics Curves
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (TO-220)
10
1
10
0
10
-1
10
-2
10
-3
10
-4
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220)
10
1
10
0
10
-1
10
-2
10
-3
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
-4
10
-6
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (s)
5/8
Version: C14
TSM6NB60
600V N-Channel Power MOSFET
TO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
6/8
Version: C14
TSM6NB60
600V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
7/8
Version: C14
TSM6NB60
600V N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Version: C14