TSM6NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 1.6 Ω Qg 18.3 nC Ordering Information Part No. TSM6NB60CZ C0G Block Diagram Package Packing TO-220 50pcs / Tube TSM6NB60CI C0G ITO-220 50pcs / Tube Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25°C (Note 1) TC = 100°C Pulsed Drain Current (Note 2) TO-220 Operating Junction and Storage Temperature Range Unit 600 V VGS ±30 V 6 ID PDTOT (Note 3) ITO-220 VDS A 3.6 IDM Total Power Dissipation @ TC=25°C Single Pulsed Avalanche Energy Limit 24 125 A 40 W EAS 83 mJ TJ, TSTG - 55 to +150 °C Symbol Limit Unit Thermal Performance Parameter Junction to Case Thermal Resistance RӨJC 1 3.1 °C/W Junction to Ambient Thermal Resistance RӨJA 62.5 65 °C/W 1/8 Version: C14 TSM6NB60 600V N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Static Conditions Symbol Min Typ Max Unit (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.6 4.5 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 µA Drain-Source On-State Resistance VGS = 10V, ID =3A RDS(on) -- 1.12 1.6 Ω Qg -- 18.3 -- Qgs -- 5.26 -- Qgd -- 6.84 -- Ciss -- 872 -- Coss -- 104 -- Crss -- 15 -- td(on) -- 23 -- tr -- 9.4 -- td(off) -- 35.6 -- tf -- 6.8 -- VSD -- -- 1.4 Dynamic (Note 5,6) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 6A, VGS = 10V Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 25V, VGS = 0V, f = 1.0MHz nC pF (Note 5,6) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 300V, RGEN = 25Ω, ID = 6A, VGS = 10V, Turn-Off Fall Time ns Source-Drain Diode Forward On Voltage IS = 6A, VGS = 0V V Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 10mH, IAS = 3.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/8 Version: C14 TSM6NB60 600V N-Channel Power MOSFET Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 3/8 Version: C14 TSM6NB60 600V N-Channel Power MOSFET Electrical Characteristics Curves BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (TO-220) Maximum Safe Operating Area (ITO-220) 4/8 Version: C14 TSM6NB60 600V N-Channel Power MOSFET Electrical Characteristics Curves Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (TO-220) 10 1 10 0 10 -1 10 -2 10 -3 10 -4 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220) 10 1 10 0 10 -1 10 -2 10 -3 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse -4 10 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (s) 5/8 Version: C14 TSM6NB60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6/8 Version: C14 TSM6NB60 600V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 7/8 Version: C14 TSM6NB60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: C14