TSM6NB60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω)(max) ID (A) 600 1.6 @ VGS =10V 6 Features Block Diagram ● Advanced high dense cell design. ● High Power and Current handing capability. Application ● Power Supply. ● DC/DC Converter. Ordering Information Part No. TSM6NB60CZ C0 TSM6NB60CI C0 Package Packing TO-220 ITO-220 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (TC = 25oC unless otherwise noted) Parameter Symbol Limit TO-220 ITO-220 Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V TC = 25℃ Continuous Drain Current Pulsed Drain Current TC = 100℃ b Operating Junction and Storage Temperature Range A 3.6 a PDTOT c 6 a IDM Total Power Dissipation @ TC=25C Single Pulsed Avalanche Energy ID 24 125 A 40 EAS 83 TJ, TSTG - 55 to +150 Symbol Limit W mJ o C Thermal Performance Parameter Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance Notes a: Current limited by package Notes b: Pulse width limited by the Maximum junction temperature Notes c: L=10mH, IAS=3.9A, VDD=50V, RG=25Ω, Starting Tj=25℃ 1/7 RӨJA 1 62.5 Unit 3.1 o 65 o C/W C/W Version: A13 TSM6NB60 600V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit a Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.6 4.5 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 µA Drain-Source On-State Resistance VGS = 10V, ID =3A RDS(ON) -- 1.12 1.6 Ω Qg -- 19 -- Qgs -- 5.7 -- Qgd -- 6.7 -- Ciss -- 841 -- Coss -- 78.4 -- Crss -- 5.7 -- td(on) -- 23 -- tr -- 9.4 -- td(off) -- 35.6 -- tf -- 6.8 -- -- -- 1.4 b Dynamic Total Gate Charge VDS = 480V, ID = 6A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Switching nC pF b Turn-On Delay Time Turn-On Rise Time VDD = 300V, RGEN = 25Ω, Turn-Off Delay Time ID = 6A, VGS = 10V, Turn-Off Fall Time nS a Source-Drain Diode Forward On Voltage IS=6A, VGS=0V VSD Notes a: Pulse test: PW ≤300µS, duty cycle ≤2% Notes b: For DESIGN AID ONLY, not subject to production testing. Notes c: Switching time is essentially independent of operating temperature. 2/7 V Version: A13 TSM6NB60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/7 Version: A13 TSM6NB60 600V N-Channel MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/7 Version: A13 TSM6NB60 600V N-Channel MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y M L = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code 5/7 Version: A13 TSM6NB60 600V N-Channel MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y M L = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code 6/7 Version: A13 TSM6NB60 600V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: A13