Newsletter 14-2015 TSM038N03

NEW PRODUCT
ANNOUNCEMENT
www.taiwansemi.com
TSM038N03
30V (VDS) N-Channel MOSFET
PDFN33
The TSM038N03PQ33 N-channel power MOSFET is a new product in Taiwan
Semiconductor’s low- to mid-voltage high performance trench power MOSFET
portfolio. The advanced trench technology is specifically designed with significantly
lower total gate charge requirements to reduce switching losses and improve the
efficiency of DC-DC converters. The PDFN33 package provides an ultra small,
thermally efficient 3mm x 3mm footprint, lower RDS(on) as a function of die size, and
lower cost which makes it extremely versatile for advanced and efficient surface
mount applications.
Parameter
VDS
VGS = -10V
RDS(on) (max)
VGS = -4.5V
Id
Qg
Value
30
3.8
5.5
80
24
Unit
V
mΩ
A
nC
Features:
Applications:





 Mobile device DC-DC conversion
 Point of load (POL) DC-DC
 Secondary switch rectification
100% avalanche tested
Low gate charge for fast switching
Pb-free plating
ROHS compliant
Halogen-free mold compound
ISSUE NO.14
APR 2015
NEW PRODUCT
ANNOUNCEMENT
www.taiwansemi.com
Cross Reference:
TSC
Infineon
Fairchild
Alpha & Omega
TSM038N03PQ33
BSZ050N03MS
FDMC2514SDC
AON7210
Ordering & Package Information:
Ordering
P/N
Reel
(pcs)
TSM038N03PQ33 RGG 5,000
Reel
Size
(inch)
Inner
Box
(pcs)
13
10,000
Carton
Carton Size
(pcs)
(mm)
Gross
Weight
(kg/ carton)
50,000
183x183x710
9
Samples of TSM038N03 can be ordered on Product Detail page:
http://www.taiwansemi.com/en/products/details/TSM038N03
For pricing and more information, please contact TSC sales or authorized distributors
worldwide:
www.taiwansemi.com/en/contact
ISSUE NO.14
APR 2015