Newsletter 18-2015 TSM200N03D

NEW PRODUCT
ANNOUNCEMENT
www.taiwansemi.com
TSM200N03D
30V (VDS) Dual N-Channel MOSFET
PDFN33 Dual
The TSM200N03DPQ33 dual N-channel power MOSFET is a new product in Taiwan
Semiconductor’s low- to mid-voltage high performance trench power MOSFET
portfolio. The advanced trench technology is designed with significantly lower total
gate charge requirements to reduce switching losses and improve the efficiency of
DC-DC converters. The PDFN33-Dual package provides an ultra small 3mm x 3mm
footprint, lower RDS(on) as a function of die size, and lower cost which makes it
extremely versatile for advanced and efficient surface mount applications.
Parameter
VDS
VGS = -10V
RDS(on) (max)
VGS = -4.5V
Id
Qg
Value
30
20
30
20
4.1
Unit
V
mΩ
A
nC
Features:
Applications:





 Mobile device DC-DC conversion
 Point of load (POL) DC-DC
 Secondary switch rectification
Low gate charge for fast switching
100% avalanche tested
Pb-free plating
ROHS compliant
Halogen-free mold compound
ISSUE NO.18
APR 2015
NEW PRODUCT
ANNOUNCEMENT
www.taiwansemi.com
Cross Reference (function only):
TSC
Alpha & Omega
Diodes Inc.
TSM200N03DPQ33
AO4842
(not package/pin)
DMN3016LDN
(not package/pin)
Ordering & Package Information:
Ordering
P/N
Reel
Size
(pcs) (inch)
Reel
TSM200N03DPQ33 RGG 5,000
13
Inner
Box
(pcs)
10,000
Carton
Carton Size
(pcs)
(mm)
Gross
Weight
(kg/ carton)
50,000
183x183x710
9
Samples of TSM200N03D can be ordered on Product Detail page:
http://www.taiwansemi.com/en/products/details/TSM200N03D
For pricing and more information, please contact TSC sales or authorized distributors
worldwide:
www.taiwansemi.com/en/contact
ISSUE NO.18
APR 2015