NEW PRODUCT ANNOUNCEMENT www.taiwansemi.com TSM200N03D 30V (VDS) Dual N-Channel MOSFET PDFN33 Dual The TSM200N03DPQ33 dual N-channel power MOSFET is a new product in Taiwan Semiconductor’s low- to mid-voltage high performance trench power MOSFET portfolio. The advanced trench technology is designed with significantly lower total gate charge requirements to reduce switching losses and improve the efficiency of DC-DC converters. The PDFN33-Dual package provides an ultra small 3mm x 3mm footprint, lower RDS(on) as a function of die size, and lower cost which makes it extremely versatile for advanced and efficient surface mount applications. Parameter VDS VGS = -10V RDS(on) (max) VGS = -4.5V Id Qg Value 30 20 30 20 4.1 Unit V mΩ A nC Features: Applications: Mobile device DC-DC conversion Point of load (POL) DC-DC Secondary switch rectification Low gate charge for fast switching 100% avalanche tested Pb-free plating ROHS compliant Halogen-free mold compound ISSUE NO.18 APR 2015 NEW PRODUCT ANNOUNCEMENT www.taiwansemi.com Cross Reference (function only): TSC Alpha & Omega Diodes Inc. TSM200N03DPQ33 AO4842 (not package/pin) DMN3016LDN (not package/pin) Ordering & Package Information: Ordering P/N Reel Size (pcs) (inch) Reel TSM200N03DPQ33 RGG 5,000 13 Inner Box (pcs) 10,000 Carton Carton Size (pcs) (mm) Gross Weight (kg/ carton) 50,000 183x183x710 9 Samples of TSM200N03D can be ordered on Product Detail page: http://www.taiwansemi.com/en/products/details/TSM200N03D For pricing and more information, please contact TSC sales or authorized distributors worldwide: www.taiwansemi.com/en/contact ISSUE NO.18 APR 2015